Stepper 3 (ASML DUV)

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Stepper 3 (ASML DUV)
Tool Type Lithography
Location Bay 7
Supervisor Demis D. John
Supervisor Phone (805) 893-5934
Supervisor E-Mail
Description Deep-UV Stepper Photolithography
Manufacturer ASML
Model PAS 5500/300
Lithography Recipes
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The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm.

The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, exposure jobs are highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.

The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. See the Mask Making Guidelines page for more info on exposure field sizes and how to order your mask plates.

Resists Used (see PhotoLith. Recipes for full process info):

  • UV210-0.3 - Positive: 300nm nominal thickness
  • UV6-0.8 - Positive: 800nm nominal thickness
  • UV26-2.5 - Positive: 2.5um nominal thickness
  • UVN2300-0.5 - Negative: 500nm nominal thickness
  • DUV42P-6/DS-K101 - Bottom Anti-Reflective Coatings “BARC”
  • PMGI/LOL1000/LOL2000 - Underlayers

AZ300MIF Developer for all processes

Process Information

  • Process Recipes Page > "Stepper 3" - Established recipes and corresponding linewidths, photoresists etc.
  • Sample size: 100 mm wafers with SEMI std. major flat
    • Piece-parts process is possible but difficult - contact staff for info
  • Alignment Accuracy: < 50 nm
  • Minimum Feature Size: ≤150 nm isolated lines, ≤200 nm dense patterns
    • To achieve ≤200nm features with high uniformity, we recommend wafers with total thickness variation (TTV) ≤5µm, and designing your CAD with a smaller Image Size for the high-res. feature.
  • Maximum Wafer Bow: approx. 100 µm. (4-inch diam.)
    • Near this value, and the job may fail or lose the wafer inside the machine due to wafer vacuum error.

Operating Procedures

Troubleshooting and Recovery

Online Video Trainings

These video trainings have bookmarks to skip to specific sections - use them as reference.

Remember, you are NOT authorized to use the system until a supervisor grants you access.

Software Options

  • Shifted Measurement Scans - better tilt/level measurement locations for edge-die. Simply enable the Checkbox in your job file.
  • Compound Image Design - flexible Image Distribution: grouping of Images with shifts, duplicate instances of Images in each Cell.
  • Job Creator - create binary ASML job files from ASCII text files. Python scripting capabilities using this option are currently implemented, see below.

Design & Fabrication Tools


See the Recipes > Lithography > Stepper Recipes > Stepper #3 page for starting processes for various photoresists, including Dose/Focus values.

Litho. recipes for all our photolith. tools can be found on the Photolithography Recipes page.

Service Provider

  • ASML - ASML performs quarterly periodic maintenance and provides on-demand support.