Difference between revisions of "Stepper 3 (ASML DUV)"

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m (→‎Operating Procedures: added wafer recovery)
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|picture=ASML.jpg
 
|picture=ASML.jpg
 
|type = Lithography
 
|type = Lithography
|super= Brian Thibeault
+
|super= Demis D. John
 
|location=Bay 7
|phone=(805)839-2268
 
  +
|description = Deep-UV Stepper Photolithography
|location=Bay 3
 
  +
|model = PAS 5500/300
|email=thibeault@ece.ucsb.edu
 
 
|manufacturer = [http://www.asml.com ASML]
|description = ASML PAS 5500/300 DUV Stepper
 
  +
|ToolType = Lithography
|manufacturer = ASML
 
  +
|recipe = Lithography
 
|materials =
 
|materials =
 
|toolid=51
 
|toolid=51
 
}}
 
}}
   
= About =
+
==About==
   
 
The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm.
 
The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm.
Line 18: Line 19:
 
The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, exposure jobs are highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.
 
The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, exposure jobs are highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.
   
The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. See the [[ASML 5500 Mask Making Guidelines|Mask Making Guidelines page]] for more info on exposure field sizes and how to order your mask plates.
+
The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. Users have stitched multiple photomasks together with success. See the [[ASML 5500 Mask Making Guidelines|Mask Making Guidelines page]] for more info on exposure field sizes and how to order your mask plates.
   
Resists Used (see [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes PhotoLith. Recipes] for processing info):
+
Resists Used (see [https://wiki.nanotech.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes PhotoLith. Recipes] for full process info):
* UV210-0.3 - Positive: 300nm nominal thickness
 
* UV6-0.8 - Positive: 800nm nominal thickness
 
* UV26-2.5 - Positive: 2.5um nominal thickness
 
* UVN2300-0.5 - Negative: 500nm nominal thickness
 
   
 
*UV210-0.3 - Positive: 300nm nominal thickness
* AR2/DUV42P-6/DS-K101: Anti-Reflective Coatings
 
 
*UV6-0.8 - Positive: 800nm nominal thickness
* PMGI: Underlayer
 
 
*UV26-2.5 - Positive: 2.5um nominal thickness
 
*UVN2300-0.5 - Negative: 500nm nominal thickness
  +
 
*DUV42P-6/DS-K101 - Bottom Anti-Reflective Coatings “BARC”
  +
*PMGI/LOL1000/LOL2000 - Underlayers
   
 
AZ300MIF Developer for all processes
 
AZ300MIF Developer for all processes
   
= Process Information =
+
==Process Information==
   
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes Process Page]
+
*[https://wiki.nanotech.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes '''Process Recipes Page'''] '''> "Stepper 3"''' - ''Established recipes and corresponding linewidths, photoresists etc.''
  +
*Sample size: 100 mm wafers with SEMI std. major flat
  +
**''Piece-parts process is possible but difficult - contact staff for info''
 
*Alignment Accuracy: < 50 nm
 
*Alignment Accuracy: < 50 nm
 
*Minimum Feature Size: ≤150 nm isolated lines, ≤200 nm dense patterns
 
*Minimum Feature Size: ≤150 nm isolated lines, ≤200 nm dense patterns
  +
**''To achieve ≤200nm features with high uniformity, we recommend wafers with total thickness variation (TTV) ≤5µm, and designing your CAD with a smaller Image Size for the high-res. feature''.
*Maximum Wafer Bow: approx. 100 µm. (4-inch diam.).
 
  +
*Maximum Wafer Thickness: 1.1 mm
**''Above this and the job may fail or lose the wafer inside the machine due to wafer vacuum error.''
 
 
*Maximum Wafer Bow: approx. 100 µm. (4-inch diam.)
 
**''Near this value, and the job may fail or lose the wafer inside the machine due to wafer vacuum error. Substrate material and substrate thickness affect this limit.''
  +
 
==Operating Procedures==
  +
 
*[[ASML Stepper 3 Standard Operating Procedure|Standard Operating Procedures]] - ''Exposing wafers, loading reticles, focus/exposure matrix''
  +
**[[ASML Stepper 3 Standard Operating Procedure#Running a focus and.2For exposure matrix|Focus-Exposure Matrix]] - ''used for'' ''calibrating sensitive exposure parameters''
 
*[[ASML Stepper 3 Error Recovery, Troubleshooting and Calibration|Troubleshooting & Calibration Check]]
  +
**''Common errors/solutions, System Calibration Verification (aka. IQC)''
  +
 
*[[ASML 5500: Recovering from an Error|ASML 5500: Recovering from an Error/Wafer Retrieval]]
 
**''How to abort the job and recover your wafer.''
  +
*[//wiki.nanotech.ucsb.edu/wiki/images/c/cd/ASML_Job_Set-Up_Guide_simple_v1.pdf Job Programming- Simplified - Full Wafers]
  +
*[//wiki.nanotech.ucsb.edu/wiki/images/f/f7/ASML_Job_Set-Up_Guide_v2.pdf Job Programming - Full]
  +
  +
*[[ASML Stepper 3 - Substrates smaller than 100mm/4-inch|Working with Substrates Smaller than 100mm/4-inch]]
  +
 
*[[ASML 5500 Mask Making Guidelines|Mask Making Guidelines]]
  +
**''All the info you need to design and order a reticle for this system.''
  +
  +
===Online Video Trainings===
  +
''These video trainings have bookmarks to skip to specific sections - use them as reference.''
  +
  +
''Remember, you are NOT authorized to use the system until a [[Demis D. John|supervisor]] grants you access.''
  +
  +
*[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=798e5110-0823-4abd-9458-ac5c01855a99 Part 1: System Info & Running a Job]
  +
*[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=dc501ba5-1f20-401c-8a96-ac2500f7e81e Part 2: Job Programming]
  +
  +
==Design Tools==
  +
  +
*[[ASML 5500 Mask Making Guidelines|Mask Making Guidelines]] - All the info you need to design and order a reticle for this system.
  +
**[[ASML 5500 Mask Making Guidelines#Templates|Templates and CAD help]] - on the above page, CAD files and spreadsheets to help you design/program.
  +
*[https://github.com/demisjohn/ASML_JobCreator ASML Job Creator] - Python scripts for generating ASML Job Files.
  +
**''Remotely-uploadable job scripting is now available - contact [[Demis D. John|the supervisor]] if interested.''
  +
*[[ASML Stepper 3 - UCSB Test Reticles|UCSB DUV Reticles]] - Photomasks available with various Alignment Markers (contact, EBL), Resolution Testing etc.
   
  +
===Software Options===
=Service Provider=
 
  +
''The Following software options have been installed on the machine.''
* [http://www.asml.com ASML]
 
   
  +
*[[ASML Stepper 3 - Shifted Measurement Scans (SMS)|Shifted Measurement Scans]] - better tilt/level measurement locations for edge-die. Simply enable the Checkbox in your job file.
=Operating Procedures=
 
  +
*[[ASML Stepper 3 - Compound Image Design (CIDS)|Compound Image Design]] - flexible Image Distribution: grouping of Images with shifts, duplicate instances of Images in each Cell.
* [[ASML Stepper 3 Standard Operating Procedure|Standard Operating Procedure]]
 
  +
*[[ASML Stepper 3 - Job Creator|Job Creator]] - create binary ASML job files from ASCII text files. Python scripting capabilities using this option are currently implemented, contact [[Demis D. John|the supervisor]] for more info.
* [[media:ASML Job Set-Up Guide v2.pdf|Job Programming - Full]]
 
* [[media:ASML Job Set-Up Guide simple v1.pdf|Job Programming- Simplified -Full Wafers]]
 
* [[ASML 5500 Mask Making Guidelines|ASML 5500 Mask Making Guidelines]]
 
   
  +
==Recipes==
=== Troubleshooting and Recovery ===
 
  +
See the '''[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Recipes > Lithography > Stepper Recipes > Stepper #3]]''' page for starting processes for various photoresists, including Dose/Focus values.
* [[ASML Stepper 3 Error Recovery, Troubleshooting and Calibration|Error Recovery, Troubleshooting and Calibration]]
 
** ''Common errors, Wafer Retrieval, General error recovery, and system calibration check''
 
   
  +
Litho. recipes for all our photolith. tools can be found on the [[Lithography Recipes#Photolithography Recipes|Photolithography Recipes]] page.
* [[ASML 5500: Recovering from an Error]]
 
** ''How to abort the job and recover your wafer.''
 
   
 
==Service Provider==
* [[ASML 5500: Recovering from a Typo in Reticle ID]]
 
** ''If you ran a job and got "Reticle Not Present" due to a typo in your job/layer/image's reticle ID.''
 
   
  +
*[http://www.asml.com ASML] - ASML performs quarterly periodic maintenance and provides on-demand support.
* [[ASML 5500: Choose Marks for Prealignment]]
 
** ''If your job aborted with "Alignment failure" on the E- or P-Chuck, because it couldn't find the alignment marks, this is how to edit your job to use different alignment marks.''
 

Revision as of 10:29, 23 March 2022

Stepper 3 (ASML DUV)
ASML.jpg
Tool Type Lithography
Location Bay 7
Supervisor Demis D. John
Supervisor Phone (805) 893-5934
Supervisor E-Mail demis@ucsb.edu
Description Deep-UV Stepper Photolithography
Manufacturer ASML
Model PAS 5500/300
Lithography Recipes
Sign up for this tool



About

The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm.

The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, exposure jobs are highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.

The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. Users have stitched multiple photomasks together with success. See the Mask Making Guidelines page for more info on exposure field sizes and how to order your mask plates.

Resists Used (see PhotoLith. Recipes for full process info):

  • UV210-0.3 - Positive: 300nm nominal thickness
  • UV6-0.8 - Positive: 800nm nominal thickness
  • UV26-2.5 - Positive: 2.5um nominal thickness
  • UVN2300-0.5 - Negative: 500nm nominal thickness
  • DUV42P-6/DS-K101 - Bottom Anti-Reflective Coatings “BARC”
  • PMGI/LOL1000/LOL2000 - Underlayers

AZ300MIF Developer for all processes

Process Information

  • Process Recipes Page > "Stepper 3" - Established recipes and corresponding linewidths, photoresists etc.
  • Sample size: 100 mm wafers with SEMI std. major flat
    • Piece-parts process is possible but difficult - contact staff for info
  • Alignment Accuracy: < 50 nm
  • Minimum Feature Size: ≤150 nm isolated lines, ≤200 nm dense patterns
    • To achieve ≤200nm features with high uniformity, we recommend wafers with total thickness variation (TTV) ≤5µm, and designing your CAD with a smaller Image Size for the high-res. feature.
  • Maximum Wafer Thickness: 1.1 mm
  • Maximum Wafer Bow: approx. 100 µm. (4-inch diam.)
    • Near this value, and the job may fail or lose the wafer inside the machine due to wafer vacuum error. Substrate material and substrate thickness affect this limit.

Operating Procedures

Online Video Trainings

These video trainings have bookmarks to skip to specific sections - use them as reference.

Remember, you are NOT authorized to use the system until a supervisor grants you access.

Design Tools

  • Mask Making Guidelines - All the info you need to design and order a reticle for this system.
  • ASML Job Creator - Python scripts for generating ASML Job Files.
    • Remotely-uploadable job scripting is now available - contact the supervisor if interested.
  • UCSB DUV Reticles - Photomasks available with various Alignment Markers (contact, EBL), Resolution Testing etc.

Software Options

The Following software options have been installed on the machine.

  • Shifted Measurement Scans - better tilt/level measurement locations for edge-die. Simply enable the Checkbox in your job file.
  • Compound Image Design - flexible Image Distribution: grouping of Images with shifts, duplicate instances of Images in each Cell.
  • Job Creator - create binary ASML job files from ASCII text files. Python scripting capabilities using this option are currently implemented, contact the supervisor for more info.

Recipes

See the Recipes > Lithography > Stepper Recipes > Stepper #3 page for starting processes for various photoresists, including Dose/Focus values.

Litho. recipes for all our photolith. tools can be found on the Photolithography Recipes page.

Service Provider

  • ASML - ASML performs quarterly periodic maintenance and provides on-demand support.