Difference between revisions of "Stepper 3 (ASML DUV)"

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(added link to stepper recipes)
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|super= Demis D. John
  
|super= Demis D. John
 
|location=Bay 7
  
|location=Bay 7
−
|description = ASML PAS 5500/300 DUV Stepper
 +
|description = Deep-UV Stepper Photolithography
  +
|model = PAS 5500/300
 
|manufacturer = [http://www.asml.com ASML]
  
|manufacturer = [http://www.asml.com ASML]
 
|ToolType = Lithography
  
|ToolType = Lithography
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}}
 
}}
   
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=About=
 +
==About==
   
 
The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm.
 
The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm.
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The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, exposure jobs are highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.
  
The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, exposure jobs are highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.
   
−
The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. See the [[ASML 5500 Mask Making Guidelines|Mask Making Guidelines page]] for more info on exposure field sizes and how to order your mask plates.
+
The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. Users have stitched multiple photomasks together with success. See the [[ASML 5500 Mask Making Guidelines|Mask Making Guidelines page]] for more info on exposure field sizes and how to order your mask plates.
   
−
Resists Used (see [https://wiki.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes PhotoLith. Recipes] for full process info):
 +
Resists Used (see [https://wiki.nanotech.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes PhotoLith. Recipes] for full process info):
   
 
*UV210-0.3 - Positive: 300nm nominal thickness
  
*UV210-0.3 - Positive: 300nm nominal thickness
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AZ300MIF Developer for all processes
  
AZ300MIF Developer for all processes
   
−
=Process Information=
 +
==Process Information==
   
−
*[https://wiki.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes '''Process Recipes Page'''] '''> "Stepper 3"''' - ''Established recipes and corresponding linewidths, photoresists etc.''
 +
*[https://wiki.nanotech.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes '''Process Recipes Page'''] '''> "Stepper 3"''' - ''Established recipes and corresponding linewidths, photoresists etc.''
 
*Sample size: 100 mm wafers with SEMI std. major flat
  
*Sample size: 100 mm wafers with SEMI std. major flat
 
**''Piece-parts process is possible but difficult - contact staff for info''
  
**''Piece-parts process is possible but difficult - contact staff for info''
 
*Alignment Accuracy: < 50 nm
  
*Alignment Accuracy: < 50 nm
 
*Minimum Feature Size: ≤150 nm isolated lines, ≤200 nm dense patterns
  
*Minimum Feature Size: ≤150 nm isolated lines, ≤200 nm dense patterns
  +
**''To achieve ≤200nm features with high uniformity, we recommend wafers with total thickness variation (TTV) ≤5µm, and designing your CAD with a smaller Image Size for the high-res. feature''.
 
*Maximum Wafer Bow: approx. 100 µm. (4-inch diam.)
 
*Maximum Wafer Bow: approx. 100 µm. (4-inch diam.)
 
**''Near this value, and the job may fail or lose the wafer inside the machine due to wafer vacuum error.''
  
**''Near this value, and the job may fail or lose the wafer inside the machine due to wafer vacuum error.''
   
−
=Operating Procedures=
 +
==Operating Procedures==
   
−
*[[ASML Stepper 3 Standard Operating Procedure|Standard Operating Procedures]]
 +
*[[ASML Stepper 3 Standard Operating Procedure|Standard Operating Procedures]] - ''Exposing wafers, loading reticles, focus/exposure matrix''
  +
**[[ASML Stepper 3 Standard Operating Procedure#Running a focus and.2For exposure matrix|Focus-Exposure Matrix]] - ''used for'' ''calibrating sensitive exposure parameters''
−
**''Exposing wafers, loading reticles, focus/exposure matrix''
  
 
*[//wiki.nanotech.ucsb.edu/wiki/images/f/f7/ASML_Job_Set-Up_Guide_v2.pdf Job Programming - Full]
  
*[//wiki.nanotech.ucsb.edu/wiki/images/f/f7/ASML_Job_Set-Up_Guide_v2.pdf Job Programming - Full]
 
*[//wiki.nanotech.ucsb.edu/wiki/images/c/cd/ASML_Job_Set-Up_Guide_simple_v1.pdf Job Programming- Simplified -Full Wafers]
  
*[//wiki.nanotech.ucsb.edu/wiki/images/c/cd/ASML_Job_Set-Up_Guide_simple_v1.pdf Job Programming- Simplified -Full Wafers]
  +
  +
*[[ASML Stepper 3 - Substrates smaller than 100mm/4-inch|Working with Substrates Smaller than 100mm/4-inch]]
  +
  +
*[[ASML 5500 Mask Making Guidelines|Mask Making Guidelines]] - All the info you need to design and order a reticle for this system.
   
 
===Troubleshooting and Recovery===
  
===Troubleshooting and Recovery===
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**''How to abort the job and recover your wafer.''
  
**''How to abort the job and recover your wafer.''
   
−
===Software Options===
 +
===Online Video Trainings===
  +
''These video trainings have bookmarks to skip to specific sections - use them as reference.''
   
  +
''Remember, you are NOT authorized to use the system until a supervisor grants you access.''
⚫
*[[ASML Stepper 3 - Shifted Measurement Scans (SMS)|Shifted Measurement Scans]] - better tilt/level measurements for edge-die.
  
  +
⚫
*[[ASML Stepper 3 - Compound Image Design (CIDS)|Compound Image Design]] - flexible Image Distribution: grouping of Images with shifts, duplicate instances of Images,
  
  +
*[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=798e5110-0823-4abd-9458-ac5c01855a99 Part 1: System Info & Running a Job]
⚫
*[[ASML Stepper 3 - Job Creator|Job Creator]] - create binary ASML job files from ASCII text files. Python scripting in progress.
  
  +
*[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=dc501ba5-1f20-401c-8a96-ac2500f7e81e Part 2: Job Programming]
   
 
==Design & Fabrication Tools==
  
==Design & Fabrication Tools==
   
−
*[[ASML 5500 Mask Making Guidelines|ASML 5500 Mask Making Guidelines]] - All the info you need to design and order a reticle for this system.
 +
* [[ASML 5500 Mask Making Guidelines|Mask Making Guidelines]] - All the info you need to design and order a reticle for this system.
−
**[[ASML 5500 Mask Making Guidelines#Templates|Templates and CAD help]] - on the above page, CAD files and spreadsheets to help you design/program.
 +
** [[ASML 5500 Mask Making Guidelines#Templates|Templates and CAD help]] - on the above page, CAD files and spreadsheets to help you design/program.
−
*[https://github.com/demisjohn/ASML_JobCreator ASML Job Creator] - Python scripts for generating ASML Job Files.
 +
* [https://github.com/demisjohn/ASML_JobCreator ASML Job Creator] - Python scripts for generating ASML Job Files.
  +
** ''This scriptable job programming is now available - contact [[Demis D. John|the supervisor]] if interested.''
−
*[[ASML Stepper 3 - UCSB Test Reticles|UCSB Test Reticles]] - Alignment Markers, Resolution Testing etc.
 +
* [[ASML Stepper 3 - UCSB Test Reticles|UCSB Test Reticles]] - Alignment Markers, Resolution Testing etc.
  +
  +
===Software Options===
  +
''The Following software options have been installed on the machine.''
  +
  ⚫
*[[ASML Stepper 3 - Shifted Measurement Scans (SMS)|Shifted Measurement Scans]] - better tilt/level measurement locations for edge-die. Simply enable the Checkbox in your job file.
  ⚫
*[[ASML Stepper 3 - Compound Image Design (CIDS)|Compound Image Design]] - flexible Image Distribution: grouping of Images with shifts, duplicate instances of Images in each Cell.
  ⚫
*[[ASML Stepper 3 - Job Creator|Job Creator]] - create binary ASML job files from ASCII text files. Python scripting capabilities using this option are currently implemented, contact [[Demis D. John|the supervisor]] for more info.
   
−
== Recipes ==
 +
==Recipes==
−
See the '''[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Recipes > Stepper Recipes > Stepper #3]]''' page for starting processes for various photoresists, including Dose/Focus values.
 +
See the '''[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Recipes > Lithography > Stepper Recipes > Stepper #3]]''' page for starting processes for various photoresists, including Dose/Focus values.
   
 
Litho. recipes for all our photolith. tools can be found on the [[Lithography Recipes#Photolithography Recipes|Photolithography Recipes]] page.
  
Litho. recipes for all our photolith. tools can be found on the [[Lithography Recipes#Photolithography Recipes|Photolithography Recipes]] page.
   
−
=Service Provider=
 +
==Service Provider==
   
 
*[http://www.asml.com ASML] - ASML performs quarterly periodic maintenance and provides on-demand support.
  
*[http://www.asml.com ASML] - ASML performs quarterly periodic maintenance and provides on-demand support.

Revision as of 09:54, 7 October 2021

Stepper 3 (ASML DUV)
ASML.jpg
Tool Type Lithography
Location Bay 7
Supervisor Demis D. John
Supervisor Phone (805) 893-5934
Supervisor E-Mail demis@ucsb.edu
Description Deep-UV Stepper Photolithography
Manufacturer ASML
Model PAS 5500/300
Lithography Recipes
Sign up for this tool



About

The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm.

The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, exposure jobs are highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.

The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. Users have stitched multiple photomasks together with success. See the Mask Making Guidelines page for more info on exposure field sizes and how to order your mask plates.

Resists Used (see PhotoLith. Recipes for full process info):

  • UV210-0.3 - Positive: 300nm nominal thickness
  • UV6-0.8 - Positive: 800nm nominal thickness
  • UV26-2.5 - Positive: 2.5um nominal thickness
  • UVN2300-0.5 - Negative: 500nm nominal thickness
  • DUV42P-6/DS-K101 - Bottom Anti-Reflective Coatings “BARC”
  • PMGI/LOL1000/LOL2000 - Underlayers

AZ300MIF Developer for all processes

Process Information

  • Process Recipes Page > "Stepper 3" - Established recipes and corresponding linewidths, photoresists etc.
  • Sample size: 100 mm wafers with SEMI std. major flat
    • Piece-parts process is possible but difficult - contact staff for info
  • Alignment Accuracy: < 50 nm
  • Minimum Feature Size: ≤150 nm isolated lines, ≤200 nm dense patterns
    • To achieve ≤200nm features with high uniformity, we recommend wafers with total thickness variation (TTV) ≤5µm, and designing your CAD with a smaller Image Size for the high-res. feature.
  • Maximum Wafer Bow: approx. 100 µm. (4-inch diam.)
    • Near this value, and the job may fail or lose the wafer inside the machine due to wafer vacuum error.

Operating Procedures

Troubleshooting and Recovery

Online Video Trainings

These video trainings have bookmarks to skip to specific sections - use them as reference.

Remember, you are NOT authorized to use the system until a supervisor grants you access.

Design & Fabrication Tools

Software Options

The Following software options have been installed on the machine.

  • Shifted Measurement Scans - better tilt/level measurement locations for edge-die. Simply enable the Checkbox in your job file.
  • Compound Image Design - flexible Image Distribution: grouping of Images with shifts, duplicate instances of Images in each Cell.
  • Job Creator - create binary ASML job files from ASCII text files. Python scripting capabilities using this option are currently implemented, contact the supervisor for more info.

Recipes

See the Recipes > Lithography > Stepper Recipes > Stepper #3 page for starting processes for various photoresists, including Dose/Focus values.

Litho. recipes for all our photolith. tools can be found on the Photolithography Recipes page.

Service Provider

  • ASML - ASML performs quarterly periodic maintenance and provides on-demand support.
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