Difference between revisions of "Stepper 3 (ASML DUV)"

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(approx maximum wafer bow)
(Process Information: added low-TTV)
 
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|picture=ASML.jpg
 
|picture=ASML.jpg
 
|type = Lithography
 
|type = Lithography
|super= Brian Thibeault
+
|super= Demis D. John
  +
|location=Bay 7
|phone=(805)839-2268
 
|location=Bay 3
 
|email=thibeault@ece.ucsb.edu
 
 
|description = ASML PAS 5500/300 DUV Stepper
 
|description = ASML PAS 5500/300 DUV Stepper
|manufacturer = ASML
+
|manufacturer = [http://www.asml.com ASML]
  +
|ToolType = Lithography
  +
|recipe = Lithography
 
|materials =
 
|materials =
 
|toolid=51
 
|toolid=51
 
}}
 
}}
   
= About =
+
==About==
   
The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm. The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, exposure jobs are highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.
+
The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm.
  +
  +
The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, exposure jobs are highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.
   
 
The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. See the [[ASML 5500 Mask Making Guidelines|Mask Making Guidelines page]] for more info on exposure field sizes and how to order your mask plates.
 
The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. See the [[ASML 5500 Mask Making Guidelines|Mask Making Guidelines page]] for more info on exposure field sizes and how to order your mask plates.
   
Resists Used (see [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes PhotoLith. Recipes] for processing info):
+
Resists Used (see [https://wiki.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes PhotoLith. Recipes] for full process info):
* UV210-0.3 - Positive: 300nm nominal thickness
 
* UV6-0.8 - Positive: 800nm nominal thickness
 
* UV26-2.5 - Positive: 2.5um nominal thickness
 
* UVN2300-0.5 - Negative: 500nm nominal thickness
 
   
  +
*UV210-0.3 - Positive: 300nm nominal thickness
* AR2/DUV42P-6/DS-K101: Anti-Reflective Coatings
 
  +
*UV6-0.8 - Positive: 800nm nominal thickness
* PMGI: Underlayer
 
  +
*UV26-2.5 - Positive: 2.5um nominal thickness
  +
*UVN2300-0.5 - Negative: 500nm nominal thickness
  +
  +
*DUV42P-6/DS-K101 - Bottom Anti-Reflective Coatings “BARC”
  +
*PMGI/LOL1000/LOL2000 - Underlayers
   
 
AZ300MIF Developer for all processes
 
AZ300MIF Developer for all processes
   
= Process Information =
+
==Process Information==
  +
  +
*[https://wiki.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes '''Process Recipes Page'''] '''> "Stepper 3"''' - ''Established recipes and corresponding linewidths, photoresists etc.''
  +
*Sample size: 100 mm wafers with SEMI std. major flat
  +
**''Piece-parts process is possible but difficult - contact staff for info''
  +
*Alignment Accuracy: < 50 nm
  +
*Minimum Feature Size: ≤150 nm isolated lines, ≤200 nm dense patterns
  +
**''To achieve ≤200nm features with high uniformity, we recommend wafers with total thickness variation (TTV) ≤5µm, and designing your CAD with a smaller Image Size for the high-res. feature''.
  +
*Maximum Wafer Bow: approx. 100 µm. (4-inch diam.)
  +
**''Near this value, and the job may fail or lose the wafer inside the machine due to wafer vacuum error.''
  +
  +
==Operating Procedures==
  +
  +
*[[ASML Stepper 3 Standard Operating Procedure|Standard Operating Procedures]] - ''Exposing wafers, loading reticles, focus/exposure matrix''
  +
**[[ASML Stepper 3 Standard Operating Procedure#Running a focus and.2For exposure matrix|Focus-Exposure Matrix]] - ''used for'' ''calibrating sensitive exposure parameters''
  +
*[//wiki.nanotech.ucsb.edu/wiki/images/f/f7/ASML_Job_Set-Up_Guide_v2.pdf Job Programming - Full]
  +
*[//wiki.nanotech.ucsb.edu/wiki/images/c/cd/ASML_Job_Set-Up_Guide_simple_v1.pdf Job Programming- Simplified -Full Wafers]
  +
  +
=== Online Video Trainings ===
  +
''These video trainings have bookmarks to skip to specific sections - use them as reference.''
  +
  +
''Remember, you are NOT authorized to use the system until a supervisor grants you access.''
  +
* [https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=798e5110-0823-4abd-9458-ac5c01855a99 Part 1: System Info & Running a Job]
  +
* [https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=dc501ba5-1f20-401c-8a96-ac2500f7e81e Part 2: Job Programming]
  +
  +
===Troubleshooting and Recovery===
  +
  +
*[[ASML Stepper 3 Error Recovery, Troubleshooting and Calibration|Error Recovery, Troubleshooting and Calibration]]
  +
**''Common errors/System Warnings, Wafer Handler Reset, System Calibration Verification''
  +
  +
*[[ASML 5500: Recovering from an Error|ASML 5500: Recovering from an Error/Wafer Retrieval]]
  +
**''How to abort the job and recover your wafer.''
  +
  +
===Software Options===
  +
  +
*[[ASML Stepper 3 - Shifted Measurement Scans (SMS)|Shifted Measurement Scans]] - better tilt/level measurement locations for edge-die. Simply enable the Checkbox in your job file.
  +
*[[ASML Stepper 3 - Compound Image Design (CIDS)|Compound Image Design]] - flexible Image Distribution: grouping of Images with shifts, duplicate instances of Images in each Cell.
  +
*[[ASML Stepper 3 - Job Creator|Job Creator]] - create binary ASML job files from ASCII text files. Python scripting capabilities using this option are currently implemented, see below.
  +
  +
==Design & Fabrication Tools==
   
  +
*[[ASML 5500 Mask Making Guidelines|ASML 5500 Mask Making Guidelines]] - All the info you need to design and order a reticle for this system.
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes Process Page]
 
  +
**[[ASML 5500 Mask Making Guidelines#Templates|Templates and CAD help]] - on the above page, CAD files and spreadsheets to help you design/program.
*Maximum Wafer Bow: approx. 100 µm. (4-inch diam.). Job may fail or lose the wafer inside the machine due to wafer vacuum error.
 
  +
*[https://github.com/demisjohn/ASML_JobCreator ASML Job Creator] - Python scripts for generating ASML Job Files.
  +
**''This new scriptable job programming is in the user-testing phase - contact [[Demis D. John|the supervisor]] if interested.''
  +
*[[ASML Stepper 3 - UCSB Test Reticles|UCSB Test Reticles]] - Alignment Markers, Resolution Testing etc.
   
  +
== Recipes ==
=Service Provider=
 
  +
See the '''[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Recipes > Lithography > Stepper Recipes > Stepper #3]]''' page for starting processes for various photoresists, including Dose/Focus values.
* [http://www.asml.com ASML]
 
   
  +
Litho. recipes for all our photolith. tools can be found on the [[Lithography Recipes#Photolithography Recipes|Photolithography Recipes]] page.
=Operating Procedures=
 
* [[media:ASML Job Set-Up Guide v2.pdf|Job Programming - Full]]
 
* [[media:ASML Job Set-Up Guide simple v1.pdf|Job Programming- Simplified -Full Wafers]]
 
* [[ASML 5500 Mask Making Guidelines|ASML 5500 Mask Making Guidelines]]
 
   
  +
==Service Provider==
=== Troubleshooting and Recovery ===
 
* [[ASML 5500: Recovering from an Error]]
 
** ''How to abort the job and recover your wafer.''
 
   
  +
*[http://www.asml.com ASML] - ASML performs quarterly periodic maintenance and provides on-demand support.
* [[ASML 5500: Recovering from a Typo in Reticle ID]]
 
** ''If you ran a job and got "Reticle Not Present" due to a typo in your job/layer/image's reticle ID.''
 
* [[ASML 5500: Choose Marks for Prealignment]]
 
** ''If your job aborted with "Alignment failure" on the P-Chuck, because it couldn't find the alignment marks, this is how to edit your job to use different alignment marks.''
 

Latest revision as of 03:58, 23 October 2020

Stepper 3 (ASML DUV)
ASML.jpg
Tool Type Lithography
Location Bay 7
Supervisor Demis D. John
Supervisor Phone (805) 893-5934
Supervisor E-Mail demis@ucsb.edu
Description ASML PAS 5500/300 DUV Stepper
Manufacturer ASML
Lithography Recipes
Sign up for this tool



About

The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm.

The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, exposure jobs are highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.

The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. See the Mask Making Guidelines page for more info on exposure field sizes and how to order your mask plates.

Resists Used (see PhotoLith. Recipes for full process info):

  • UV210-0.3 - Positive: 300nm nominal thickness
  • UV6-0.8 - Positive: 800nm nominal thickness
  • UV26-2.5 - Positive: 2.5um nominal thickness
  • UVN2300-0.5 - Negative: 500nm nominal thickness
  • DUV42P-6/DS-K101 - Bottom Anti-Reflective Coatings “BARC”
  • PMGI/LOL1000/LOL2000 - Underlayers

AZ300MIF Developer for all processes

Process Information

  • Process Recipes Page > "Stepper 3" - Established recipes and corresponding linewidths, photoresists etc.
  • Sample size: 100 mm wafers with SEMI std. major flat
    • Piece-parts process is possible but difficult - contact staff for info
  • Alignment Accuracy: < 50 nm
  • Minimum Feature Size: ≤150 nm isolated lines, ≤200 nm dense patterns
    • To achieve ≤200nm features with high uniformity, we recommend wafers with total thickness variation (TTV) ≤5µm, and designing your CAD with a smaller Image Size for the high-res. feature.
  • Maximum Wafer Bow: approx. 100 µm. (4-inch diam.)
    • Near this value, and the job may fail or lose the wafer inside the machine due to wafer vacuum error.

Operating Procedures

Online Video Trainings

These video trainings have bookmarks to skip to specific sections - use them as reference.

Remember, you are NOT authorized to use the system until a supervisor grants you access.

Troubleshooting and Recovery

Software Options

  • Shifted Measurement Scans - better tilt/level measurement locations for edge-die. Simply enable the Checkbox in your job file.
  • Compound Image Design - flexible Image Distribution: grouping of Images with shifts, duplicate instances of Images in each Cell.
  • Job Creator - create binary ASML job files from ASCII text files. Python scripting capabilities using this option are currently implemented, see below.

Design & Fabrication Tools

Recipes

See the Recipes > Lithography > Stepper Recipes > Stepper #3 page for starting processes for various photoresists, including Dose/Focus values.

Litho. recipes for all our photolith. tools can be found on the Photolithography Recipes page.

Service Provider

  • ASML - ASML performs quarterly periodic maintenance and provides on-demand support.