Difference between revisions of "Stepper 2 (AutoStep 200)"

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|picture=Stepper2.jpg
 
|picture=Stepper2.jpg
 
|type = Lithography
 
|type = Lithography
|super= Adam Abrahamsen
+
|super= Biljana Stamenic
 
|phone=(805)839-3918x213
 
|phone=(805)839-3918x213
 
|location=Bay 6
 
|location=Bay 6
|email=abrahamsen@ece.ucsb.edu
+
|email=stamenic@ucsb.edu
 
|description = GCA 200 I-Line Wafer Stepper
 
|description = GCA 200 I-Line Wafer Stepper
 
|manufacturer = GCA
 
|manufacturer = GCA
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}}  
 
}}  
  
= About =
+
==About==
  
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution and/or critical alignment. The system has been modified to accept piece parts (down to ~15 mm x 15 mm) up to 6” diameter wafers using manual wafer loading. The maximum die size is ~ 15 mm x 15 mm. The system has an Olympus 2142 (N.A. = 0.42) lens that reduces the mask image by 5 x and gives an ultimate resolution of ~ 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. Using the global, manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS local alignment system, alignment error better than 0.15 um is achieved. With the 350 W Hg arc lamp, we get about 180 W/cm² of i-line intensity at the wafer.
+
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution and/or critical alignment. The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5 x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field.  Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. Using the global, manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS local alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.
  
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. The laboratory contains a variety of i-line compatible photoresists. SPR510A, 955CM, 950-0.8 for 0.7-1.0 um thick positive processes. AZ5214E for 1.0 um thick image reversal (negative) process. SPR955CM-1.8 for 1.5-2.0 um thick positive processes. SPR220-3 for 2.5-5 um thick positive process. SPR220-7 and AZ9260 for >5 um thick positive processes. AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process. Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.
+
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract.  
 +
 
 +
==Detailed Specifications==
  
=Detailed Specifications=
 
 
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process
 
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process
 
*Maximum die size: ~ 15 mm x 15 mm
 
*Maximum die size: ~ 15 mm x 15 mm
 
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field
 
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field
*Registration tolerance: 0.30 mm global alignment; Max 0.15 mm local alignment (with care, you can achieve < 0.10 mm registration)
+
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)
*Minimum substrate size: ~ 10 x 10 mm
+
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).
 
*Computer programmable, recipes saved on hard disk
 
*Computer programmable, recipes saved on hard disk
*Reticle alignment fiducials and global/local fiducials available
+
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.
 +
 
 +
==Process Information==
 +
[[Autostep 200 Mask Making Guidance]] ('''''Work In Progress-not ready yet''''')
 +
 
 +
*''information on designing and ordering your photomasks for this system''
 +
 
 +
===Recipes===
 +
 
 +
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Recipes > '''Photolithography Recipes''']
 +
 
 +
===Photoresists:===
 +
 
 +
*The laboratory contains a variety of i-line compatible photoresists.  See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.).  Basic photoresists include:
 +
**955CM-0.9 for 0.7-1.0 um thick positive processes.
 +
**AZ5214E for 1.0 um thick image reversal (negative) process.
 +
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.
 +
**SPR220-3 for 2.5-5 um thick positive process.
 +
**SPR220-7 for >5 um thick positive processes.
 +
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.
 +
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.
 +
 
 +
===CAD Files===
 +
 
 +
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]
 +
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''
 +
**''Insert your designs into the template as Instances scaled UP by 5x.''
 +
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]
 +
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]
 +
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]
 +
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''
 +
 
 +
==Service Provider==
 +
 
 +
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.
  
= Process Information =
+
==Operating Procedures==
  
*[http://signupmonkey.ece.ucsb.edu/wiki/index.php/Lithography_Recipes Process Page]
+
*[[Stepper 2 (AutoStep 200) Operating Procedures|Standard Operating Procedure]]
 +
*[[Stepper 2 (Autostep 200) - Job Programming|Programming a Job]]
 +
*[[Autostep 200 User Accessible Commands]]
 +
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]
 +
*[[Autostep 200 Old training manual]]
  
=Service Provider=
+
==Staff Procedures==
* [http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.
+
''These procedures are for Staff use - contact staff if you think you need to run these!''
  
=Documentation=
+
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]
* [[media:GCA-200-Training-Manual.pdf|Training Manual]]
 

Latest revision as of 07:15, 11 September 2021

Stepper 2 (AutoStep 200)
Stepper2.jpg
Tool Type Lithography
Location Bay 6
Supervisor Biljana Stamenic
Supervisor Phone (805) 893-4002
Supervisor E-Mail biljana@ece.ucsb.edu
Description GCA 200 I-Line Wafer Stepper
Manufacturer GCA
Sign up for this tool



About

Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution and/or critical alignment. The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5 x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. Using the global, manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS local alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.

The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract.

Detailed Specifications

  • Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process
  • Maximum die size: ~ 15 mm x 15 mm
  • Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field
  • Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)
  • Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).
  • Computer programmable, recipes saved on hard disk
  • Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.

Process Information

Autostep 200 Mask Making Guidance (Work In Progress-not ready yet)

  • information on designing and ordering your photomasks for this system

Recipes

Photoresists:

  • The laboratory contains a variety of i-line compatible photoresists. See the Photolith. Recipes Page for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:
    • 955CM-0.9 for 0.7-1.0 um thick positive processes.
    • AZ5214E for 1.0 um thick image reversal (negative) process.
    • SPR955CM-1.8 for 1.5-2.0 um thick positive processes.
    • SPR220-3 for 2.5-5 um thick positive process.
    • SPR220-7 for >5 um thick positive processes.
    • AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.
    • Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.

CAD Files

Service Provider

Operating Procedures

Staff Procedures

These procedures are for Staff use - contact staff if you think you need to run these!