Sputtering Recipes

From UCSB Nanofab Wiki
Jump to navigation Jump to search

Back to Vacuum Deposition Recipes.

Sputter 1 (Custom)

Sputter 2 (SFI Endeavor)

Al Deposition (Sputter 2)

AlNx Deposition (Sputter 2)

Au Deposition (Sputter 2)

TiO2 Deposition (Sputter 2)

Sputter 3 (AJA ATC 2000-F)

Sputter 3 Process Table

Material P(mT) Pow (W) Sub Bias (W) Ar N2 O2 Height-Tilt Rate (nm/min) Stress (MPa) Resistivity (uOhm-cm) n @ 633nm k @ 633nm
InP HCl:H3PO4(1:3) ~1000 Highly InGaAs High Lamponi (p.102) Example Jon Doe Example
InP HCl:H3PO4(1:3) ~1000 Highly InGaAsP High Lamponi (p.102) Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAs High Lamponi (p.102) Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAsP High Lamponi (p.102) Example Jon Doe Example


Ni and Ta Deposition (Sputter 3)

Sputter 4 (AJA ATC 2200-V)

W Deposition (Sputter 4)

Sputter 5 (Lesker AXXIS)

Ion Beam Deposition (Veeco NEXUS)

IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.

All users are required to enter their calibration deps (simple test deps only)


SiO2 deposition (IBD)

  • Refractive Index: ≈1.485
  • Rate: ≈6.1nm/min (users must calibrate this prior to critical deps)
  • Stress ≈ -320MPa (compressive)

Si3N4 deposition (IBD)

  • Refractive Index ≈ 2.01
  • Rate ≈ 4.5nm/min (users must calibrate this prior to critical deps)
  • Stress ≈ -1756MPa (compressive)

Ta2O5 deposition (IBD)

  • Refractive Index ≈ 2.10
  • Rate ≈7.8nm/min (users must calibrate this prior to critical deps)
  • Stress ≈ -140MPa (compressive)

TiO2 deposition (IBD)