Difference between revisions of "Sputtering Recipes"

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(→‎TiO{{sub|2}} deposition (IBD): cauchy params, absorbing <350nm)
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*Stress ≈ -233MPa (compressive)
 
*Stress ≈ -233MPa (compressive)
 
*Refractive Index: ≈ 2.172
 
*Refractive Index: ≈ 2.172
 +
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm):
 +
** A = 2.1123
 +
** B = 0.018901
 +
** C = -0.016222
  
 
==TiO{{sub|2}} deposition (IBD)==
 
==TiO{{sub|2}} deposition (IBD)==

Revision as of 23:24, 20 August 2014

Back to Vacuum Deposition Recipes.

Sputter 1 (Custom)

Sputter 2 (SFI Endeavor)

Al Deposition (Sputter 2)

AlNx Deposition (Sputter 2)

Au Deposition (Sputter 2)

TiO2 Deposition (Sputter 2)

Sputter 3 (AJA ATC 2000-F)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material P(mT) Pow(W) Sub(W) T(C) Ar N2 O2 Height-Tilt Rate(nm/min) Stress(MPa) Rs(uOhm-cm) n@633nm k@633nm Data Below Comment
Ni 5 150 0 20 25 0 0 44-4 5.23 - - - - yes Ning
Ni 5 150 0 20 25 0 0 25-9 1.82 - - - - yes Ning
Ni 5 75 0 20 25 0 0 44-4 2.50 - - - - yes Ning
Ta 5 150 0 20 25 0 0 44-4 9.47 - - - - yes Ning
Ta 5 75 0 20 25 0 0 44-4 5.03 - - - - yes Ning
SampleClean-NativeSiO2 10 0 18 20 25 0 0 44-4 - - - - - yes 150Volts 5 min


Ni and Ta Deposition (Sputter 3)

Sputter 4 (AJA ATC 2200-V)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material P(mT) Pow(W) Sub(W) T(C) Ar N2 O2 Height-Tilt Rate(nm/min) Stress(MPa) Rs(uOhm-cm) n@633nm k@633nm Data Below Comment
W 3 300 0 50 45 0 0 H2.75-T5 11.5 -150 to 150 11 - - Yes Jeremy Watcher
TiW 4.5 300 0 75 45 0 0 H2.75-T5 9.5 -150 to 150 60 - - Yes 10%Ti by Wt
TiN 4 250 0 250 20 10 0 H2.00-T7 1.9 - - - - No
Nb 4 250 0 20 30 0 0 H2.00-T7 7.5 - - - - No

W-TiW Deposition (Sputter 4)

Sputter 5 (Lesker AXXIS)

Ion Beam Deposition (Veeco NEXUS)

IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.

All users are required to enter their calibration deps (simple test deps only)

SiO2 deposition (IBD)

  • Deposition Rate: ≈ 5.63 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~434nm/min
  • Stress ≈ -420MPa (compressive)
  • Refractive Index: ≈ 1.486

Si3N4 deposition (IBD)

  • Deposition Rate: ≈ 4.13 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~11nm/min
  • Stress ≈ -1618MPa (compressive)
  • Refractive Index: ≈ 1.970

Ta2O5 deposition (IBD)

  • Deposition Rate: ≈ 8.42 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~1 nm/min
  • Stress ≈ -233MPa (compressive)
  • Refractive Index: ≈ 2.172
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.1123
    • B = 0.018901
    • C = -0.016222

TiO2 deposition (IBD)

  • Deposition Rate: ≈ 1.38 nm/min (users must calibrate this prior to critical deps)
  • HF etch rate ~7nm/min
  • Stress ≈ -442MPa (compressive)
  • Refractive Index: ≈ 2.345
  • [Cauchy Parameters]:
    • A = 2.435
    • B = -4.9045e-4
    • C = 0.01309
  • Absorbing < ~350nm