Difference between revisions of "Sputtering Recipes"

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*[[media:TiW-Sputter4-4.5mT-300W-300s.pdf|TiW Film's AFM Step and Roughness]]
  
*[[media:TiW-Sputter4-4.5mT-300W-300s.pdf|TiW Film's AFM Step and Roughness]]
   
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== au Deposition (Sputter 4) ==
 +
== Au Deposition (Sputter 4) ==
 
*[[media:|Au Film's AFM Step and Roughness]]
  
*[[media:|Au Film's AFM Step and Roughness]]
   

Revision as of 09:52, 27 June 2017

Back to Vacuum Deposition Recipes. R

Sputter 2 (SFI Endeavor)

Al Deposition (Sputter 2)

AlNx Deposition (Sputter 2)

Au Deposition (Sputter 2)

TiO2 Deposition (Sputter 2)

Sputter 3 (AJA ATC 2000-F)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material P(mT) Pow(W) Sub(W) T(C) Ar N2 O2 Height-Tilt Rate(nm/min) Stress(MPa) Rs(uOhm-cm) n@633nm k@633nm Data Below Comment
Si 8 250 0 25 25 0 0 15-3 1.4 - - - - no Gerhard - ramp 2W/s - 3% Unif 4" wafer
SiO2 3 200 10 20 25 0 3 25-9 3.68 - - 1.447 - yes Brian
SiO2 3 250 10 20 25 0 2.5 25-9 4.3 - - 1.485 - yes Brian
SiO2 3 200 10 20 25 0 5 45-3 2.60 - - 1.471 - yes Brian
SiN 3 200 10 20 25 3 0 25-9 1.56 - - 1.992 - yes Brian
SiN 3 250 10 20 25 2.5 0 25-9 2.1 - - 2.06 - yes Brian
Co 10(5) 200 0 20 25 0 0 25-9 2.3 - - - - yes Alex K
Cr 5 200 0 20 25 0 0 44-4 6.84 - - - - no Brian
Cu 1.5 50(395v) 0 20 25 0 0 25-9 4.15 - - - - no Ning
Fe 10(5) 200 0 20 25 0 0 25-9 1.25 - - - - No Alex K
Mo 3 200 0 20 25 0 0 44-4 13.15 - - - - yes Ning
Ni 5 150 0 20 25 0 0 44-4 5.23 - - - - yes Ning
Ni 5 150 0 20 25 0 0 25-9 1.82 - - - - yes Ning
Ni 5 75 0 20 25 0 0 44-4 2.50 - - - - yes Ning
Ni 3 200 0 20 25 0 0 44-4 9.4 - - - - yes Ning
Ni 1.5 50(399v) 0 20 25 0 0 25-9 0.96 - - - - no Ning
Pt 3 50 0 20 25 0 0 25-9 4.1 - - - - no Ning
Ta 5 150 0 20 25 0 0 44-4 9.47 - - - - yes Ning
Ta 5 75 0 20 25 0 0 44-4 5.03 - - - - yes Ning
Ti 3 100 0 20 25 0 0 25-9 1.34 - - - - yes Ning
SampleClean-NativeSiO2 10 0 18 20 25 0 0 44-4 - - - - - yes 150Volts 5 min

Fe and Co Deposition (Sputter 3)

Mo Deposition (Sputter 3)

Ni and Ta Deposition (Sputter 3)

SiO2 Deposition (Sputter 3)

SiN Deposition (Sputter 3)

Ti Deposition (Sputter 3)

Sputter 4 (AJA ATC 2200-V)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material P(mT) Pow(W) Sub(W) T(C) Ar N2 O2 Height-Tilt Rate(nm/min) Stress(MPa) Rs(uOhm-cm) n@633nm k@633nm Data Below Comment
W 3 300 0 50 45 0 0 H2.75-T5 11.5 -150 to 150 11 - - Yes Jeremy Watcher
TiW 4.5 200 0 20 45 0 0 H1-T10 4.7 - - - - Yes Ning Cao
TiW 4.5 300 0 75 45 0 0 H2.75-T5 9.5 -150 to 150 60 - - Yes 10%Ti by Wt
TiN 3 150 110V 20 48.25 1.75 0 H2.5-T5 2 - 60 - - No
Nb 4 250 0 20 30 0 0 H2.00-T7 7.5 - - - - No
Ti 10 200 0 20 45 0 0 H2.75-T5 2.3 - - - - Yes Ning Cao
Au 5 200 0 20 45 0 0 H1-T10 17.7 - - - - Yes Ning Cao
Au 10 300 0 20 45 0 0 H2.75-T5 45.4 - - - - Yes Ning Cao
Al 5 200 0 20 45 0 0 H2.75-T5 4.4 - - - - No(SEM:available Ning Cao
Pt 5 200 0 20 45 0 0 H2.75-T5 7.4 - - - - Yes Ning Cao
Pt 3 50 0 20 45 0 0 H2.75-T5 3.9 - - - - Yes Ning Cao (Voltage: 439v)

W-TiW Deposition (Sputter 4)

Ti-Au Deposition (Sputter 4)

Pt Deposition (Sputter 4)

TiW Deposition (Sputter 4)

Au Deposition (Sputter 4)

  • [[media:|Au Film's AFM Step and Roughness]]

Sputter 5 (Lesker AXXIS)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material P(mT) Pow(W) Sub(V) T(C) Ar N2 O2 Height-Tilt Rate(nm/min) Stress(MPa) Rs(uOhm-cm) Rq(nm) n@633nm k@633nm LPDb/LPDa Data Below Comment
SiO2 3 250 120 20 45 0 2 H1.0-T10 2.32 - - 1.49 - 153/6384 No Biljana
SiO2 3 250 120 20 45 0 4.5 H1.0-T10 2.29 -515 - 0.210 1.49 138/4445 No ( AFM available) Biljana
SiO2 3 250 120 20 45 0 6 H1.0-T10 2.32 - - 1.49 - 27/1515 Yes Biljana
  • LPD-light particle detection
  • LPDb- light particle detection before deposition
  • LPDa- light particle detection after deposition

SiO2 Deposition (Sputter 5)

Ion Beam Deposition (Veeco NEXUS)

All users are required to enter their calibration deps (simple test deps only)

SiO2 deposition (IBD)


  • SiO2 1hr depositions:
  • Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~350 nm/min
  • Stress ≈ -390MPa (compressive)
  • Refractive Index: ≈ 1.494
  • [Cauchy Parameters] (350-2000nm):
    • A = 1.480
    • B = 0.00498
    • C = -3.2606e-5

Ta2O5 deposition (IBD)


  • Ta2O5 1hr depositions:
  • Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~2 nm/min
  • Stress ≈ -232MPa (compressive)
  • Refractive Index: ≈ 2.172
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.1123
    • B = 0.018901
    • C = -0.016222

Si3N4 deposition (IBD)

  • Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~11nm/min
  • Stress ≈ -1590MPa (compressive)
  • Refractive Index: ≈ 1.969
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.000
    • B = 0.01974
    • C = 1.2478e-4

TiO2 deposition (IBD)

  • Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
  • HF etch rate ~5.34nm/min
  • Stress ≈ -445MPa (compressive)
  • Refractive Index: ≈ 2.259
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.435
    • B = -4.9045e-4
    • C = 0.01309
  • Absorbing < ~350nm
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