Sputtering Recipes

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Sputter 2 (SFI Endeavor)

Al Deposition (Sputter 2)

• Al Deposition Recipe

AlN_x Deposition (Sputter 2)

• AlN_x Deposition Recipe

Au Deposition (Sputter 2)

• Au Deposition Recipe

TiO₂ Deposition (Sputter 2)

• TiO2₂ Deposition Recipe

Sputter 3 (AJA ATC 2000-F)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material	P(mT)	Pow(W)	Sub(W)	T(C)	Ar	N2	O2	Height-Tilt	Rate(nm/min)	Stress(MPa)	Rs(uOhm-cm)	n@633nm	k@633nm	Data Below	Comment
Si	8	250	0	25	25	0	0	15-3	1.4	-	-	-	-	no	Gerhard - ramp 2W/s - 3% Unif 4" wafer
SiO2	3	200	10	20	25	0	3	25-9	3.68	-	-	1.447	-	yes	Brian
SiO2	3	250	10	20	25	0	2.5	25-9	4.3	-	-	1.485	-	yes	Brian
SiO2	3	200	10	20	25	0	5	45-3	2.60	-	-	1.471	-	yes	Brian
SiN	3	200	10	20	25	3	0	25-9	1.56	-	-	1.992	-	yes	Brian
SiN	3	250	10	20	25	2.5	0	25-9	2.1	-	-	2.06	-	yes	Brian
Co	10(5)	200	0	20	25	0	0	25-9	2.3	-	-	-	-	yes	Alex K
Cr	5	200	0	20	25	0	0	44-4	6.84	-	-	-	-	no	Brian
Fe	10(5)	200	0	20	25	0	0	25-9	1.25	-	-	-	-	No	Alex K
Mo	3	200	0	20	25	0	0	44-4	13.15	-	-	-	-	yes	Ning
Ni	5	150	0	20	25	0	0	44-4	5.23	-	-	-	-	yes	Ning
Ni	5	150	0	20	25	0	0	25-9	1.82	-	-	-	-	yes	Ning
Ni	5	75	0	20	25	0	0	44-4	2.50	-	-	-	-	yes	Ning
Ni	3	200	0	20	25	0	0	44-4	9.4	-	-	-	-	yes	Ning
Pt	3	50	0	20	25	0	0	25-9	4.1	-	-	-	-	no	Ning
Ta	5	150	0	20	25	0	0	44-4	9.47	-	-	-	-	yes	Ning
Ta	5	75	0	20	25	0	0	44-4	5.03	-	-	-	-	yes	Ning
Ti	3	100	0	20	25	0	0	25-9	1.34	-	-	-	-	yes	Ning
SampleClean-NativeSiO2	10	0	18	20	25	0	0	44-4	-	-	-	-	-	yes	150Volts 5 min

Fe and Co Deposition (Sputter 3)

• Fe and Co Deposition Recipe

Mo Deposition (Sputter 3)

• Mo Deposition Recipe

Ni and Ta Deposition (Sputter 3)

• Ni and Ta Deposition Recipe
• Ni Sputtering Film Recipe-3mT-200W

SiO2 Deposition (Sputter 3)

• SiO2 Uniformity Data
• SiO2 Flow and Bias Variations Including AFM Data

SiN Deposition (Sputter 3)

• SiN Flow and RF Variations Including AFM Data

Ti Deposition (Sputter 3)

• Ti Sputtering Film Recipe-3mT-100W

Sputter 4 (AJA ATC 2200-V)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material	P(mT)	Pow(W)	Sub(W)	T(C)	Ar	N2	O2	Height-Tilt	Rate(nm/min)	Stress(MPa)	Rs(uOhm-cm)	n@633nm	k@633nm	Data Below	Comment
W	3	300	0	50	45	0	0	H2.75-T5	11.5	-150 to 150	11	-	-	Yes	Jeremy Watcher
TiW	4.5	200	0	20	45	0	0	H1-T10	4.36	-	-	-	-	No(AFM:available)	Ning Cao
TiW	4.5	300	0	75	45	0	0	H2.75-T5	9.5	-150 to 150	60	-	-	Yes	10%Ti by Wt
TiN	3	150	110V	20	48.25	1.75	0	H2.5-T5	2	-	60	-	-	No
Nb	4	250	0	20	30	0	0	H2.00-T7	7.5	-	-	-	-	No
Ti	10	200	0	20	45	0	0	H2.75-T5	2.3	-	-	-	-	Yes	Ning Cao
Au	5	200	0	20	45	0	0	H1-T10	17.7	-	-	-	-	No(AFM:available)	Ning Cao
Au	10	300	0	20	45	0	0	H2.75-T5	45.4	-	-	-	-	Yes	Ning Cao
Al	5	200	0	20	45	0	0	H2.75-T5	4.4	-	-	-	-	No(SEM:available	Ning Cao
Pt	5	200	0	20	45	0	0	H2.75-T5	7.32	-	-	-	-	No(AFM:available)	Ning Cao

W-TiW Deposition (Sputter 4)

• W-TiW Deposition Recipe

Ti-Au Deposition (Sputter 4)

• Ti-Au Deposition Recipe and SEM Cross-Sections

Ion Beam Deposition (Veeco NEXUS)

• IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.
• Particulates in SiO2 and Ta2O5 in 2015

All users are required to enter their calibration deps (simple test deps only)

SiO₂ deposition (IBD)

• SiO₂ Standard Recipe
• SiO₂ Data December 2014
• SiO₂ Thickness uniformity 2014
• SiO₂ Data-15min depositions 2015
• SiO₂ Thickness uniformity-15 min depositions 2015
• SiO₂ Data-1hr depositions 2015
• SiO₂ Thickness uniformity-1hr depositions 2015
• SiO₂ Data-1hr depositions 2016
• SiO₂ Thickness uniformity-1hr depositions 2016

• SiO2 1hr depositions:
• Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~350 nm/min
• Stress ≈ -390MPa (compressive)
• Refractive Index: ≈ 1.494
• [Cauchy Parameters] (350-2000nm):
  • A = 1.480
  • B = 0.00498
  • C = -3.2606e-5

Ta₂O₅ deposition (IBD)

• Ta₂O₅ Standard Recipe
• Ta₂O₅ Data December 2014
• Ta₂O₅ Thickness uniformity 2014

• Ta₂O₅ Data December-15 min depositions 2015
• Ta₂O₅ Thickness uniformity-15 min depositions 2015
• Ta₂O₅ Data December-1hr depositions 2015
• Ta₂O₅ Thickness uniformity-1hr depositions 2015
• Ta₂O₅ Data December-1hr depositions 2016
• Ta₂O₅ Thickness uniformity-1hr depositions 2016

• Ta2O5 1hr depositions:
• Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~2 nm/min
• Stress ≈ -232MPa (compressive)
• Refractive Index: ≈ 2.172
• [Cauchy Parameters] (350-2000nm):
  • A = 2.1123
  • B = 0.018901
  • C = -0.016222

Si₃N₄ deposition (IBD)

• Si₃N₄ Standard Recipe
• Si₃N₄ Data December 2014
• Si₃N₄ Thickness uniformity 2014

• Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~11nm/min
• Stress ≈ -1590MPa (compressive)
• Refractive Index: ≈ 1.969
• [Cauchy Parameters] (350-2000nm):
  • A = 2.000
  • B = 0.01974
  • C = 1.2478e-4

TiO₂ deposition (IBD)

• TiO₂ Standard Recipe
• TiO₂ Data December 2014
• TiO₂ Data December 2015
• TiO₂ Thickness uniformity 2014

• Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
• HF etch rate ~5.34nm/min
• Stress ≈ -445MPa (compressive)
• Refractive Index: ≈ 2.259
• [Cauchy Parameters] (350-2000nm):
  • A = 2.435
  • B = -4.9045e-4
  • C = 0.01309
• Absorbing < ~350nm

E-Beam 2 Recipes

ITO deposition (E-Beam 2)

• Room-temperature ITO Deposition, Annealing, and Electrical and Optical Properties

CeO₂ deposition (E-Beam 2)

• Room- and High-temperature CeO₂ Depositions with and without an Additional Oxygen Gas Flow