Difference between revisions of "Sputtering Recipes"
(Take Sputter 2 off of TOC list,but keep recipes on page at bottom) |
(→Ion Beam Deposition (Veeco NEXUS): fixed links to Historical Data fro SiO/TaO) |
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(22 intermediate revisions by 3 users not shown) | |||
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{{rl|Atomic Layer Deposition Recipes|Pt deposition (ALD)}} |
{{rl|Atomic Layer Deposition Recipes|Pt deposition (ALD)}} |
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− | =[[Sputter 3 (AJA ATC 2000-F)]]= |
+ | ==[[Sputter 3 (AJA ATC 2000-F)]]== |
− | + | Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20 SignupMonkey Page] for a list of currently installed targets. |
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+ | ===Materials Table (Sputter 3)=== |
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+ | The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. |
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{| class="wikitable sortable" |
{| class="wikitable sortable" |
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− | !Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm |
+ | !Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm |
!Target Consumed Lower Limit!!Data Below!!Comment |
!Target Consumed Lower Limit!!Data Below!!Comment |
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− | ==Height Conversion for Older Recipes== |
+ | ===Height Conversion for Older Recipes=== |
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows: |
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows: |
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{| class="wikitable" |
{| class="wikitable" |
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Interpolation plot [[:File:Sputter 3 - height conversion v1.PNG|can be found here.]] |
Interpolation plot [[:File:Sputter 3 - height conversion v1.PNG|can be found here.]] |
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− | ==Fe and Co Deposition (Sputter 3)== |
+ | ===Fe and Co Deposition (Sputter 3)=== |
− | *[// |
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/1/15/Fe_and_Co_Films_using_Sputter-3.pdf Fe and Co Deposition Recipe] |
− | ==Cu Deposition (Sputter 3)== |
+ | ===Cu Deposition (Sputter 3)=== |
− | *[// |
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Cu_Film_using_Sputter-3.pdf Cu Deposition Recipe] |
− | ==Mo Deposition (Sputter 3)== |
+ | ===Mo Deposition (Sputter 3)=== |
− | *[// |
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/7/7f/46-Mo_Film_using_Sputter3.pdf Mo Deposition Recipe] |
− | ==Ni and Ta Deposition (Sputter 3)== |
+ | ===Ni and Ta Deposition (Sputter 3)=== |
− | *[// |
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/b/b6/24-Ni_and_Ta_Films_using_Sputter-3.pdf Ni and Ta Deposition Recipe] |
− | *[// |
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/9/93/Ni_Sputtering_Film_using_Sputter_3-a.pdf Ni Sputtering Film Recipe-3mT-200W] |
− | ==SiO2 Deposition (Sputter 3)== |
+ | ===SiO2 Deposition (Sputter 3)=== |
− | *[// |
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/e/ef/SiO2-AJA-1-Reactive-Sputter-Uniformity-rev-1.pdf SiO2 Uniformity Data] |
− | *[// |
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/b/b2/SiO2-AJA-1-Reactive-Sputter-Power-Flow-AFM-Roughness-rev1.pdf SiO2 Flow and Bias Variations Including AFM Data] |
− | ==SiN Deposition (Sputter 3)== |
+ | ===SiN Deposition (Sputter 3)=== |
− | *[// |
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/f/fb/SiN-AJA-1-Reactive-Sputtering-Power-Flow-AFM-Rate-Index-rev1.pdf SiN Flow and RF Variations Including AFM Data] |
− | ==Ti Deposition (Sputter 3)== |
+ | ===Ti Deposition (Sputter 3)=== |
− | *[// |
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/Ti_Sputtering_Film_using_Sputter_3.pdf Ti Sputtering Film Recipe-3mT-100W] |
− | =[[Sputter 4 (AJA ATC 2200-V)]]= |
+ | ==[[Sputter 4 (AJA ATC 2200-V)]]== |
− | + | Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets. |
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+ | ===Materials Table (Sputter 4)=== |
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+ | The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. |
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{| class="wikitable sortable" |
{| class="wikitable sortable" |
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|- |
|- |
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!Material!!P(mT) |
!Material!!P(mT) |
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− | !Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment |
+ | !Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment |
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|- |
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|Al||5 |
|Al||5 |
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Line 201: | Line 205: | ||
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|- |
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|Au||10 |
|Au||10 |
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− | | || |
+ | | ||200||0||20||45||0||0||H2.75-T5||35.5||-||-||-||-||Yes||Demis: 200W rate (Max for Au) 2022-08-03 |
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|- |
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|Cu |
|Cu |
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Line 229: | Line 233: | ||
|Pt||3 |
|Pt||3 |
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| ||50(439V)||0||20||45||0||0||H2.75-T5||3.9||-||-||-||-||Yes||Ning Cao |
| ||50(439V)||0||20||45||0||0||H2.75-T5||3.9||-||-||-||-||Yes||Ning Cao |
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+ | |- |
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+ | |Ru |
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+ | |3 |
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+ | | |
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+ | |200 |
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+ | | |
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+ | | |
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+ | |45 |
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+ | | |
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+ | | |
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+ | |H2.75-T4 |
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+ | |~10 |
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+ | | |
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+ | | |
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+ | | |
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+ | | |
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+ | |Yes |
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+ | |Ning Cao |
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|- |
|- |
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|Ti||10 |
|Ti||10 |
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− | ==W-TiW Deposition (Sputter 4)== |
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+ | ===Au Deposition (Sputter 4)=== |
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− | *[//www.nanotech.ucsb.edu/wiki/images/c/cc/W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf W-TiW Deposition Recipe] |
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+ | *[//wiki.nanotech.ucsb.edu/wiki/images/0/01/Au-Sputter4-5mT-200W-120s.pdf Au Film's AFM Step and Roughness] |
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− | ==Ti-Au Deposition (Sputter 4)== |
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+ | ===Al Deposition (Sputter 4)=== |
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− | *[//www.nanotech.ucsb.edu/wiki/images/8/89/Ti-Au-Sputtering-Films-AJA2-rev1.pdf Ti-Au Deposition Recipe and SEM Cross-Sections] |
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+ | *[//wiki.nanotech.ucsb.edu/wiki/images/1/17/Al-Sputter4-5mT-200W-30m.pdf Al Film SEM Profile] |
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− | ==Pt Deposition (Sputter 4)== |
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+ | ===Al2O3 Deposition (Sputter 4)=== |
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− | *[//www.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness] |
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+ | *Rate: 5.134 nm/min |
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− | ==TiW Deposition (Sputter 4)== |
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+ | *[https://en.wikipedia.org/wiki/Cauchy%27s_equation Cauchy] Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range) |
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+ | **A = 1.626 |
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+ | **B = 5.980E-3 |
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+ | **C = 1.622E-4 |
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+ | ===Pt Deposition (Sputter 4)=== |
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− | *[//www.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness] |
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+ | *[//wiki.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness] |
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− | ==TiO<sub>2</sub> Deposition (Sputter 4)== |
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+ | ===Ru Deposition (Sputter 4)=== |
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− | *[//www.nanotech.ucsb.edu/wiki/images/1/19/TiO2_film_using_Sputter4.pdf TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness] |
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+ | *[https://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao |
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− | ==Au Deposition (Sputter 4)== |
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+ | **Deposition Rate ~10nm/min |
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+ | **See [[ICP Etching Recipes#SiO2 Etching|Fluorine-ICP > SiO2 Etching]] page for more info. |
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+ | ===Ti-Au Deposition (Sputter 4)=== |
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− | *[//www.nanotech.ucsb.edu/wiki/images/0/01/Au-Sputter4-5mT-200W-120s.pdf Au Film's AFM Step and Roughness] |
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+ | *[//wiki.nanotech.ucsb.edu/wiki/images/8/89/Ti-Au-Sputtering-Films-AJA2-rev1.pdf Ti-Au Deposition Recipe and SEM Cross-Sections] |
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− | ==Al Deposition (Sputter 4)== |
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+ | ===TiO<sub>2</sub> Deposition (Sputter 4)=== |
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− | *[//www.nanotech.ucsb.edu/wiki/images/1/17/Al-Sputter4-5mT-200W-30m.pdf Al Film SEM Profile] |
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+ | *[//wiki.nanotech.ucsb.edu/wiki/images/1/19/TiO2_film_using_Sputter4.pdf TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness] |
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− | ==Al2O3 Deposition (Sputter 4)== |
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+ | ===TiW Deposition (Sputter 4)=== |
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− | *Rate: 5.134 nm/min |
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− | *[https://en.wikipedia.org/wiki/Cauchy%27s_equation Cauchy] Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range) |
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− | **A = 1.626 |
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− | **B = 5.980E-3 |
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− | **C = 1.622E-4 |
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+ | *[//wiki.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness] |
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− | =[[Sputter 5 (AJA ATC 2200-V)]]= |
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+ | ===W-TiW Deposition (Sputter 4)=== |
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− | The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. |
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+ | |||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/c/cc/W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf W-TiW Deposition Recipe] |
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+ | |||
+ | ==[[Sputter 5 (AJA ATC 2200-V)]]== |
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Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets. |
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets. |
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+ | |||
+ | ===Materials Table (Sputter 5)=== |
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+ | The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. |
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{| class="wikitable sortable" |
{| class="wikitable sortable" |
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|- |
|- |
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!Material!!P(mT) |
!Material!!P(mT) |
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− | !Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment |
+ | !Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment |
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|- |
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|Al |
|Al |
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Line 335: | Line 365: | ||
|No |
|No |
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|Demis 2018-04-13 |
|Demis 2018-04-13 |
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+ | |- |
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+ | |Pt |
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+ | |3.0 |
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+ | | |
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+ | |200(507v) |
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+ | | - |
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+ | | - |
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+ | |45 |
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+ | | - |
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+ | | - |
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+ | |H1-T10 |
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+ | |7.03 |
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+ | |? |
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+ | |? |
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+ | |? |
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+ | |2.068 |
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+ | |4.951 |
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+ | |? |
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+ | |No |
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+ | |Ning 2021-09-27 |
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|- |
|- |
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|SiO2||3 |
|SiO2||3 |
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| ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana |
| ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana |
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|- |
|- |
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+ | |Ti |
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+ | |3.0 |
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+ | | |
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+ | |200(374v) |
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+ | | - |
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+ | | - |
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+ | |45 |
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+ | | - |
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+ | | - |
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+ | |H1-T10 |
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+ | |2.52 |
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+ | |? |
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+ | |? |
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+ | |? |
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+ | |2.679 |
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+ | |1.853 |
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+ | |? |
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+ | |No |
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+ | |Ning 2021-09-27 |
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|} |
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''*LPD: light particle detection:'' |
''*LPD: light particle detection:'' |
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*''LPDa: light particle detection after deposition'' |
*''LPDa: light particle detection after deposition'' |
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− | ==SiO2 Deposition (Sputter 5)== |
+ | ===SiO2 Deposition (Sputter 5)=== |
*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film] |
*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film] |
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=[[Ion Beam Deposition (Veeco NEXUS)]]= |
=[[Ion Beam Deposition (Veeco NEXUS)]]= |
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+ | ''Ion-Beam Assisted Deposition - high density reactive sputtering for dielectric film stacks, with angled/rotating fixtures.'' |
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− | + | ===[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2030038046 IBD Process Control Plots] - ''Plots of all process control data.''=== |
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− | **'''All users are required to enter their calibration deps (simple test deps only)''' |
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− | *[https://docs.google.com/spreadsheets/d/1y704PRxvXf8bbqb79CrISnk2t0FeojYVJIjrAcBU2_w/edit#gid=sharing Particulates in SiO2 and Ta2O5 in 2015] |
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− | ==SiO |
+ | ==SiO<sub>2</sub> deposition (IBD)== |
− | *[// |
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_SiO2_dep''" |
− | *[https://docs.google.com/ |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 SiO<sub>2</sub><nowiki> [IBD] Current Process Control Data</nowiki>] |
+ | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28IBD.29 SiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>] - Before Oct. 2021 |
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− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGNyV083bmpzMjZpZ0JFVWhoOUpaN3c#gid=sharing SiO<sub>2</sub> Thickness uniformity 2014] |
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− | *[https://docs.google.com/spreadsheets/d/1pxQkTm274CVjzlnE3cZgE5ycgXfIk8cVCAwTg5x7Xx4/edit#gid=sharing SiO<sub>2</sub> Data-15min depositions 2015] |
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− | *[https://docs.google.com/spreadsheets/d/1vYSV7iGIMJsqmlxF6bAjdzuaATcDGxBvwlhb2XYJoWg/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-15 min depositions 2015] |
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− | *[https://docs.google.com/spreadsheets/d/1qnlny3A8jRUPU-8O1ycx9MUFmpti_pRv93rT1pXHMWM/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2015] |
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− | *[https://docs.google.com/spreadsheets/d/12SKWvqxDuyTgWL44wfvrA2gKDy6ihV2XWh6WJsTT9hE/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015] |
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− | *[https://docs.google.com/spreadsheets/d/1KPLP68f9oC6H2C39r4_Lcd9RkjPiVnZTiz6sMYoJodc/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2016] |
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− | *[https://docs.google.com/spreadsheets/d/1dFI1B2WxS7oEGMPl2dlLtmiAin-6EKWSEj9hFezB4_w/edit#gid==sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2016] |
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+ | ====SiO<sub>2</sub> Thin-Film Properties (IBD)==== |
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− | ======SiO2 1hr deposition properties:====== |
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*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps) |
*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps) |
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− | *HF |
+ | *HF Etch Rate ~350 nm/min |
*Stress ≈ -390MPa (compressive) |
*Stress ≈ -390MPa (compressive) |
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*Refractive Index: ≈ 1.494 |
*Refractive Index: ≈ 1.494 |
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− | *[[ |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
**A = 1.480 |
**A = 1.480 |
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**B = 0.00498 |
**B = 0.00498 |
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Line 386: | Line 448: | ||
==Si<sub>3</sub>N<sub>4</sub> deposition (IBD)== |
==Si<sub>3</sub>N<sub>4</sub> deposition (IBD)== |
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− | *[// |
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Si3N4_Dep''" |
− | *[https://docs.google.com/ |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Current Process Control Data</nowiki>] |
+ | |||
− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEdsbWRhYW9mbFRLem56TjFFWjRwR1E#gid=sharing Si<sub>3</sub>N<sub>4</sub> Thickness uniformity 2014] |
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+ | ===Si<sub>3</sub>N<sub>4</sub> Thin-Film Properties (IBD)=== |
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*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps) |
*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps) |
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− | *HF |
+ | *HF Etch Rate: ~11nm/min |
*Stress ≈ -1590MPa (compressive) |
*Stress ≈ -1590MPa (compressive) |
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*Refractive Index: ≈ 1.969 |
*Refractive Index: ≈ 1.969 |
||
− | *[[ |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
**A = 2.000 |
**A = 2.000 |
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**B = 0.01974 |
**B = 0.01974 |
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**C = 1.2478e-4 |
**C = 1.2478e-4 |
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− | == |
+ | ==Ta<sub>2</sub>O<sub>5</sub> deposition (IBD)== |
− | These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info. |
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− | {| |
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− | ![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]] |
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− | ![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]] |
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− | |} |
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− | |||
− | ==Ta{{sub|2}}O{{sub|5}} deposition (IBD)== |
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− | |||
− | *[//www.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta{{sub|2}}O{{sub|5}} Standard Recipe] |
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− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGhhUGdCR2JudkZJU3pBemR4bS1GWWc#gid=0=sharing Ta{{sub|2}}O{{sub|5}} Data December 2014] |
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− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dE5xbVFyUFZqdTdUN0JRSUNvMGFGb2c#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity 2014] |
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+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Ta2O5_dep''" |
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− | *[https://docs.google.com/spreadsheets/d/1WRqzTTIX4D7Un-XqHqSB66JuSplrMiZAzGvjYFZ-Gtk/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-15 min depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Current Process Control Data</nowiki>] |
+ | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Ta2O5_deposition_.28IBD.29 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Historical Data</nowiki>] - before Oct. 2021 |
||
− | *[https://docs.google.com/spreadsheets/d/1saOA_9SwcPCkuW7uGgOSXhvtwrMkKJUxeS4wRE9qxQ8/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/1wXAtWbbE8dvvulJxJXkwQyejgcrz51t-HH4omTq0scs/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/1A0bVnVgwPfj5JfAtmgNSeto2Rix8qOfiGO9mpXa433g/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2016] |
||
− | *[https://docs.google.com/spreadsheets/d/1U7XUvluOpgD7tsciZ1pAFGiFsKJKvym6mH5hKaSt5b0/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2016] |
||
+ | ====Ta2O5 Thin-Film Properies (IBD)==== |
||
*Ta2O5 1hr depositions: |
*Ta2O5 1hr depositions: |
||
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps) |
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps) |
||
− | *HF |
+ | *HF Etch Rate ≈ 2 nm/min |
*Stress ≈ -232MPa (compressive) |
*Stress ≈ -232MPa (compressive) |
||
*Refractive Index: ≈ 2.172 |
*Refractive Index: ≈ 2.172 |
||
− | *[[ |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
**A = 2.1123 |
**A = 2.1123 |
||
**B = 0.018901 |
**B = 0.018901 |
||
**C = -0.016222 |
**C = -0.016222 |
||
− | == |
+ | ==Al<sub>2</sub>O<sub>3</sub> deposition (IBD)== |
− | * |
+ | *Al<sub>2</sub>O<sub>3</sub> [IBD] Standard Recipe - "''1_Al2O3_dep''" |
− | *[https://docs.google.com/ |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Current Process Control Data</nowiki>] |
+ | |||
− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dF9YSW9jTDJzY19MbmVEbUQtVzJVdVE#gid=sharing TiO<sub>2</sub> Thickness uniformity 2014] |
||
+ | ===Al2O3 Thin-Film Properties (IBD)=== |
||
+ | |||
+ | * Deposition Rate ≈ 2.05nm/min (users must calibrate this prior to critical deps) |
||
+ | *HF etch rate ≈ 167nm/min |
||
+ | *Stress ≈ -332MPa (compressive) |
||
+ | *Refractive Index: ≈ 1.656 |
||
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
||
+ | **A = ''To Be Added'' |
||
+ | **B = |
||
+ | **C = |
||
+ | *Absorbing < ~350nm |
||
+ | |||
+ | ==TiO<sub>2</sub> deposition (IBD)== |
||
+ | |||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO<sub>2</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_TiO2_dep''" |
||
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 TiO<sub>2</sub><nowiki> [IBD] Current Process Control Data</nowiki>] |
||
+ | |||
+ | ===TiO<sub>2</sub> Thin-Film Properties (IBD)=== |
||
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps) |
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps) |
||
Line 440: | Line 508: | ||
*Stress ≈ -445MPa (compressive) |
*Stress ≈ -445MPa (compressive) |
||
*Refractive Index: ≈ 2.259 |
*Refractive Index: ≈ 2.259 |
||
− | *[[ |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
**A = 2.435 |
**A = 2.435 |
||
**B = -4.9045e-4 |
**B = -4.9045e-4 |
||
**C = 0.01309 |
**C = 0.01309 |
||
− | *Absorbing < ~350nm |
+ | *Absorbing < ~350nm wavelength |
− | == |
+ | ==SiO<sub>x</sub>N<sub>y</sub> deposition (IBD)== |
+ | These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability by getting away from the low-flow limit of the MFC's. Data provided by [[Demis D. John|Demis D. John]], 2010. |
||
+ | {| |
||
+ | ![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]] |
||
+ | ![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]] |
||
+ | |} |
||
+ | ==Standard Cleaning Procedure (IBD)== |
||
− | *Al2O3 standard recipe: 1_Al2O3_dep |
||
+ | You must edit the "''#_GridClean''"("#" is your group number) steps in your Process according to the following times: |
||
+ | *5min GridClean for 1hr or less deposition |
||
− | *[https://docs.google.com/spreadsheets/d/1Qwxa7rtq2kGeFUQxnjGFgtdCJP4uIX_bdUcCWFvO72g/edit#gid= Al2O3 Data 2018] |
||
+ | *10min GridClean for up to 2hrs of dep. |
||
− | *[https://docs.google.com/spreadsheets/d/1rjwDQ0WJOIL7XWx2KWQ4fEPjNkr6GEmiXGmQXZnWFOI/edit#gid= Al2O3 Thickness uniformity 2018] |
||
+ | *Do not deposit for longer than 2hrs - instead break up your Process into multiple 2-hr subroutines with cleans in between. See the recipe "''1_SiO2_Dep_Multi''" for an example. |
||
+ | ===Standard Grid-Clean Recipe=== |
||
− | *Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps) |
||
+ | ''[[To Be Added]]'' |
||
− | *HF etch rate ~167nm/min |
||
− | *Stress ≈ -332MPa (compressive) |
||
− | *Refractive Index: ≈ 1.656 |
||
− | *[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm):( working on) |
||
− | **A = |
||
− | **B = |
||
− | **C = |
||
− | *Absorbing < ~350nm |
||
+ | ==Reference Recipes (Disabled Tools)== |
||
+ | ===[[Sputter 2 (SFI Endeavor)|<big><u>Sputter 2 (SFI Endeavor)</u></big>]]=== |
||
− | |||
− | [[Sputter 2 (SFI Endeavor)|<big>'''<u>Sputter 2 (SFI Endeavor)</u>'''</big>]] |
||
− | |||
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.''' |
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.''' |
||
+ | '''Al Deposition (Sputter 2)''' |
||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe] |
||
− | ==Al Deposition (Sputter 2)== |
||
− | |||
− | *[//www.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe] |
||
− | + | '''AlN<sub>x</sub> Deposition (Sputter 2)''' |
|
− | *[// |
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf AlN<sub>x</sub> Deposition Recipe] |
− | + | '''Au Deposition (Sputter 2)''' |
|
− | *[// |
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf Au Deposition Recipe] |
− | + | '''TiO<sub>2</sub> Deposition (Sputter 2)''' |
|
− | *[// |
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/c/c4/22-TiO2-Film-Sputter-2.pdf TiO2<sub>2</sub> Deposition Recipe] |
Revision as of 18:44, 15 November 2022
Back to Vacuum Deposition Recipes. R
Sputter 3 (AJA ATC 2000-F)
Please see the SignupMonkey Page for a list of currently installed targets.
Materials Table (Sputter 3)
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
Material | P(mT) | Pow(W) | Sub(W) | T(C) | Ar | N2 | O2 | Height-Tilt(mm) | Rate(nm/min) | Stress(MPa) | Rs(uOhm-cm) | n@633nm | k@633nm | Target Consumed Lower Limit | Data Below | Comment |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Au | - | - | - | - | - | - | - | - | - | - | - | - | - | Set: 200 W
Read: 400 VDC |
no | |
Al2O3 | 3 | 200 (RF2) | off | 20 | 30 | 1.5 | 1.52"-4mm | 5.32 | 1.6478 | 0 | no | Demis D. John | ||||
Co | 10(5) | 200 | 0 | 20 | 25 | 0 | 0 | 25-9 | 2.3 | - | - | - | - | yes | Alex K | |
Cr | 5 | 200 | 0 | 20 | 25 | 0 | 0 | 44-4 | 6.84 | - | - | - | - | no | Brian | |
Cu | 1.5 | 50(395v) | 0 | 20 | 25 | 0 | 0 | 25-9 | 4.15 | - | - | - | - | no | Ning | |
Cu | 5 | 150(~490v) | 0 | 20 | 15 | 0 | 0 | 0.82"-9 | 8 | - | - | - | - | yes | Ning | |
Fe | 10(5) | 200 | 0 | 20 | 25 | 0 | 0 | 25-9 | 1.25 | - | - | - | - | No | Alex K | |
Mo | 3 | 200 | 0 | 20 | 25 | 0 | 0 | 44-4 | 13.15 | - | - | - | - | yes | Ning | |
Ni | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 44-4 | 5.23 | - | - | - | - | yes | Ning | |
Ni | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 25-9 | 1.82 | - | - | - | - | yes | Ning | |
Ni | 5 | 75 | 0 | 20 | 25 | 0 | 0 | 44-4 | 2.50 | - | - | - | - | yes | Ning | |
Ni | 3 | 200 | 0 | 20 | 25 | 0 | 0 | 44-4 | 9.4 | - | - | - | - | yes | Ning | |
Ni | 1.5 | 50(399v) | 0 | 20 | 25 | 0 | 0 | 25-9 | 0.96 | - | - | - | - | no | Ning | |
Pt | 3 | 50 | 0 | 20 | 25 | 0 | 0 | 0.82"-9 | 2.9 | - | - | - | - | no | Ning | |
Si | 8 | 250 | 0 | 25 | 25 | 0 | 0 | 15-3 | 1.4 | - | - | - | - | no | Gerhard - ramp 2W/s - 3% Unif 4" wafer | |
SiN | 3 | 200 | 10 | 20 | 25 | 3 | 0 | 25-9 | 1.56 | - | - | 1.992 | - | yes | Brian | |
SiN | 3 | 250 | 10 | 20 | 25 | 2.5 | 0 | 25-9 | 2.1 | - | - | 2.06 | - | yes | Brian | |
SiO2 | 3 | 200 | 10 | 20 | 25 | 0 | 3 | 25-9 | 3.68 | - | - | 1.447 | - | yes | Brian | |
SiO2 | 3 | 200 | 10 | 20 | 25 | 0 | 5 | 45-3 | 2.60 | - | - | 1.471 | - | yes | Brian | |
SiO2 | 3 | 250 | 10 | 20 | 25 | 0 | 2.5 | 25-9 | 4.3 | - | - | 1.485 | - | yes | Brian | |
Ta | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 44-4 | 9.47 | - | - | - | - | yes | Ning | |
Ta | 5 | 75 | 0 | 20 | 25 | 0 | 0 | 44-4 | 5.03 | - | - | - | - | yes | Ning | |
Ti | 3 | 100 | 0 | 20 | 25 | 0 | 0 | 25-9 | 1.34 | - | - | - | - | yes | Ning | |
SampleClean-NativeSiO2 | 10 | 0 | 18 | 20 | 25 | 0 | 0 | 44-4 | - | - | - | - | - | yes | 150Volts 5 min |
Height Conversion for Older Recipes
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:
Old (mm) | New (inches) | Typical Gun Tilt (mm) |
---|---|---|
15 | ||
25 | 0.82 | 9 |
44 | 1.52 | 4 |
Interpolation plot can be found here.
Fe and Co Deposition (Sputter 3)
Cu Deposition (Sputter 3)
Mo Deposition (Sputter 3)
Ni and Ta Deposition (Sputter 3)
SiO2 Deposition (Sputter 3)
SiN Deposition (Sputter 3)
Ti Deposition (Sputter 3)
Sputter 4 (AJA ATC 2200-V)
Please see the SignupMonkey page for a list of currently installed targets.
Materials Table (Sputter 4)
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
Material | P(mT) | Power Source | Pow(W) | Sub(W) | T(C) | Ar | N2 | O2 | Height-Tilt(mm) | Rate(nm/min) | Stress(MPa) | Rs(uOhm-cm) | n@633nm | k@633nm | Data Below | Comment |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Al | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 4.4 | - | - | - | - | Yes | Ning Cao | |
Al2O3 | 3 | RF4-Sw1 | 200 | 0 | 20 | 30 | 0 | 1.5 | H2.75-T5 | 5.1 | 1.64202 | 0 | partial | Demis D. John | ||
Au | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H1-T10 | 17.7 | - | - | - | - | Yes | Ning Cao | |
Au | 10 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 35.5 | - | - | - | - | Yes | Demis: 200W rate (Max for Au) 2022-08-03 | |
Cu | 5 | 150 | 0 | 20 | 30 | 0 | 0 | H0.82-T9 | 6.7 | No (SEM available) | Ning Cao | |||||
Nb | 4 | 250 | 0 | 20 | 30 | 0 | 0 | H2.00-T7 | 7.5 | - | - | - | - | No | ||
Pt | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 7.4 | - | - | - | - | Yes | Ning Cao | |
Pt | 3 | 50(439V) | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 3.9 | - | - | - | - | Yes | Ning Cao | |
Ru | 3 | 200 | 45 | H2.75-T4 | ~10 | Yes | Ning Cao | |||||||||
Ti | 10 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 2.3 | - | - | - | - | Yes | Ning Cao | |
TiN | 3 | 150 | 110V | 20 | 48.25 | 1.75 | 0 | H2.5-T5 | 2 | - | 60 | - | - | No | ||
TiO2 | 3 | 250(RF:450V) | 0 | 20 | 45 | 0 | 3 | H2.75-T5 | 4.3 | - | - | - | Yes | Ning Cao | ||
TiW | 4.5 | 200 | 0 | 20 | 45 | 0 | 0 | H1-T10 | 4.7 | - | - | - | - | Yes | Ning Cao | |
TiW | 4.5 | 300 | 0 | 75 | 45 | 0 | 0 | H2.75-T5 | 9.5 | -150 to 150 | 60 | - | - | Yes | 10%Ti by Wt | |
W | 3 | 300 | 0 | 50 | 45 | 0 | 0 | H2.75-T5 | 11.5 | -150 to 150 | 11 | - | - | Yes | Jeremy Watcher |
Au Deposition (Sputter 4)
Al Deposition (Sputter 4)
Al2O3 Deposition (Sputter 4)
- Rate: 5.134 nm/min
- Cauchy Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)
- A = 1.626
- B = 5.980E-3
- C = 1.622E-4
Pt Deposition (Sputter 4)
Ru Deposition (Sputter 4)
- Ruthenium Hardmask for SiO2 Etching - Full Process Traveler by Ning Cao
- Deposition Rate ~10nm/min
- See Fluorine-ICP > SiO2 Etching page for more info.
Ti-Au Deposition (Sputter 4)
TiO2 Deposition (Sputter 4)
TiW Deposition (Sputter 4)
W-TiW Deposition (Sputter 4)
Sputter 5 (AJA ATC 2200-V)
Please see the SignupMonkey page for a list of currently installed targets.
Materials Table (Sputter 5)
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
Material | P(mT) | Power Source | Pow(W) | Sub(V) | T(C) | Ar | N2 | O2 | Height-Tilt(mm) | Rate(nm/min) | Stress(MPa) | Rs(uOhm-cm) | Rq(nm) | n@633nm | k@633nm | LPDb/LPDa* | Data Below | Comment |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Al | 5 | 250 | 0 | 20 | 45 | 0 | 0 | H1-T10 | 2.5 | 22 | No (SEM available) | Ning | ||||||
Al2O3 | 1.5 | DC5-SW1 | 150 | - | - | 45 | - | 5 | H2.75-T5 | 5.3 | ? | ? | ? | 1.641 | - | ? | No | Demis 2018-04-13 |
Pt | 3.0 | 200(507v) | - | - | 45 | - | - | H1-T10 | 7.03 | ? | ? | ? | 2.068 | 4.951 | ? | No | Ning 2021-09-27 | |
SiO2 | 3 | 250 | 120 | 20 | 45 | 0 | 2 | H1.0-T10 | 2.32 | - | - | 1.49 | - | 153/6384 | No | Biljana | ||
SiO2 | 3 | 250 | 120 | 20 | 45 | 0 | 4.5 | H1.0-T10 | 2.29 | -515 | - | 0.210 | 1.49 | 138/4445 | No ( AFM available) | Biljana | ||
SiO2 | 3 | 250 | 120 | 20 | 45 | 0 | 6 | H1.0-T10 | 2.32 | - | - | 1.49 | - | 27/1515 | Yes | Biljana | ||
Ti | 3.0 | 200(374v) | - | - | 45 | - | - | H1-T10 | 2.52 | ? | ? | ? | 2.679 | 1.853 | ? | No | Ning 2021-09-27 |
*LPD: light particle detection:
- LPDb: light particle detection before deposition
- LPDa: light particle detection after deposition
SiO2 Deposition (Sputter 5)
Ion Beam Deposition (Veeco NEXUS)
Ion-Beam Assisted Deposition - high density reactive sputtering for dielectric film stacks, with angled/rotating fixtures.
IBD Process Control Plots - Plots of all process control data.
SiO2 deposition (IBD)
- SiO2 [IBD] Standard Recipe - "1_SiO2_dep"
- SiO2 [IBD] Current Process Control Data
- SiO2 [IBD] Historical Data - Before Oct. 2021
SiO2 Thin-Film Properties (IBD)
- Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
- HF Etch Rate ~350 nm/min
- Stress ≈ -390MPa (compressive)
- Refractive Index: ≈ 1.494
- Cauchy Parameters (350-2000nm):
- A = 1.480
- B = 0.00498
- C = -3.2606e-5
Si3N4 deposition (IBD)
- Si3N4 [IBD] Standard Recipe - "1_Si3N4_Dep"
- Si3N4 [IBD] Current Process Control Data
Si3N4 Thin-Film Properties (IBD)
- Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
- HF Etch Rate: ~11nm/min
- Stress ≈ -1590MPa (compressive)
- Refractive Index: ≈ 1.969
- Cauchy Parameters (350-2000nm):
- A = 2.000
- B = 0.01974
- C = 1.2478e-4
Ta2O5 deposition (IBD)
- Ta2O5 [IBD] Standard Recipe - "1_Ta2O5_dep"
- Ta2O5 [IBD] Current Process Control Data
- Ta2O5 [IBD] Historical Data - before Oct. 2021
Ta2O5 Thin-Film Properies (IBD)
- Ta2O5 1hr depositions:
- Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
- HF Etch Rate ≈ 2 nm/min
- Stress ≈ -232MPa (compressive)
- Refractive Index: ≈ 2.172
- Cauchy Parameters (350-2000nm):
- A = 2.1123
- B = 0.018901
- C = -0.016222
Al2O3 deposition (IBD)
- Al2O3 [IBD] Standard Recipe - "1_Al2O3_dep"
- Al2O3 [IBD] Current Process Control Data
Al2O3 Thin-Film Properties (IBD)
- Deposition Rate ≈ 2.05nm/min (users must calibrate this prior to critical deps)
- HF etch rate ≈ 167nm/min
- Stress ≈ -332MPa (compressive)
- Refractive Index: ≈ 1.656
- Cauchy Parameters (350-2000nm):
- A = To Be Added
- B =
- C =
- Absorbing < ~350nm
TiO2 deposition (IBD)
TiO2 Thin-Film Properties (IBD)
- Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
- HF etch rate ~5.34nm/min
- Stress ≈ -445MPa (compressive)
- Refractive Index: ≈ 2.259
- Cauchy Parameters (350-2000nm):
- A = 2.435
- B = -4.9045e-4
- C = 0.01309
- Absorbing < ~350nm wavelength
SiOxNy deposition (IBD)
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability by getting away from the low-flow limit of the MFC's. Data provided by Demis D. John, 2010.
Standard Cleaning Procedure (IBD)
You must edit the "#_GridClean"("#" is your group number) steps in your Process according to the following times:
- 5min GridClean for 1hr or less deposition
- 10min GridClean for up to 2hrs of dep.
- Do not deposit for longer than 2hrs - instead break up your Process into multiple 2-hr subroutines with cleans in between. See the recipe "1_SiO2_Dep_Multi" for an example.
Standard Grid-Clean Recipe
Reference Recipes (Disabled Tools)
Sputter 2 (SFI Endeavor)
This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.
Al Deposition (Sputter 2)
AlNx Deposition (Sputter 2)
Au Deposition (Sputter 2)
TiO2 Deposition (Sputter 2)