Difference between revisions of "Sputter 3 (AJA ATC 2000-F)"
|Line 31:||Line 31:|
= Materials Table =
= Materials Table =
For the materials tables, please visit the [[
For the materials tables, please visit the [[-(-)]].
Revision as of 15:35, 11 July 2013
The Six-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sources are contained in tiltable sputter gun modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a chimney configuration with very narrow source shutter gaps. Uniformity better than 2% is achieved for various sample heights. 2 DC sources and 2 RF sources allow for co-deposition of materials, including dedicated magnetic films Fe, Ni, and Co. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O2 or N2 environment to produce metal-oxides or nitrides. The deposition chamber is loadlocked providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1000 l/s magnetically levitated turbo (capable of pumping O2) achieving an ~ 2 E-7 T ultimate pressure. A VAT adaptive pressure control valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto 4 inch carriers. Flow rates are controlled with standard mass flow controllers. Argon is used for the sputter gas, with N2 and O2 used for reactive sputtering. Gun power supplies include: 500W DC magnetron drivers, 13.56 Mhz 300W RF supplies, and a 50W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 800°C. The system is recipe driven and computer controlled for reproducible results.
- 6 target with DC or RF operation
- Reactive sputtering with N2 or O2 using RF or DC
- Co-deposition of up to four materials: DC and RF
- Magnetic Material Deposition: Fe, Ni, Co
- SiO2, SiN, ITO, AlN, Al2O3 and other metal-oxide/nitrides possible
- Low E-7 T ultimate pressure (3 mT typical operating pressure), load-locked chamber
- 4" diameter sample holder
- Gun Tilt, Sample height and rotation adjustments
- Deposition uniformity is ~ 1-2% over 4 " diameter
- Up to 800°C dep temperature
- RF Biasing of sample during deposition or as a pre-deposition clean
For the materials tables, please visit the Sputter 3