Difference between revisions of "SiO2 Etching Test using CF4/CHF3"

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Latest revision as of 12:43, 9 November 2021

Flourine ICP: 3.8mT, 50/900W, CF4/CHF3=30/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Image
11/5/2021 SOFL01 136 1.2