Rapid Thermal Processor (AET RX6)

Rapid Thermal Processor (AET RX6) Tool Type Vacuum Deposition Location Bay 3 Supervisor Brian Lingg Supervisor Phone (805) 893-8145 Supervisor E-Mail lingg_b@ucsb.edu Description PECVD Plasma Therm 790 For Oxides And Nitrides Manufacturer Plasma-Therm Vacuum Deposition Recipes

About

Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, near atmospheric pressure anneals in Nitrogen, Forming Gas (10%H₂ / 90%N₂), or Dry Air (~ 10%O₂ / ~ 90%N₂) can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO₂, Si₃N₄, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

Detailed Specifications

• Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 1 min. Nitrogen, Forming Gas, Dry Air at flows up to 10000 lpm TC use for anneals up to 1000°C Pyrometer for temperatures above 400°C
• Windows-based process monitoring and control software by Sedona Visual Controls

Max temp/Time

Temperature	Time
1000°C	1 Hour
1100°C	10 min
1200°C	3 min
1300°C	10 sec