Rapid Thermal Processor (AET RX6)

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Rapid Thermal Processor (AET RX6)
RTP.jpg
Location Bay 3
Tool Type Vacuum Deposition
Manufacturer Plasma-Therm
Description PECVD Plasma Therm 790 For Oxides And Nitrides

Primary Supervisor Bill Millerski
(805) 893-2655
wmillerski@ucsb.edu

Secondary Supervisor

Tony Bosch


Recipes Vacuum Deposition RecipesN/A

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About

Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

Detailed Specifications

  • Max. Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.
  • Maximum ramp rate of 50°C/Sec.
  • Oxygen, Nitrogen and Forming Gas flows up to 10LPM.
  • TC use for anneals up to 1200°C
  • Windows-based process monitoring and control software by Sedona Visual Controls

Max temp/Time

Temperature Time
1000°C 1 Hour
1100°C 10 min
1200°C 3 min
1300°C 10 sec

Documentation