Difference between revisions of "Rapid Thermal Processor (AET RX6)"

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(Created page with " Max temp/Time 1000C = 1 Hour 1100C = 10 min 1200C = 3 min 1300C = 10 seconds")
 
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{{tool|{{PAGENAME}}
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|picture=PECVD1.jpg
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|type = Vacuum Deposition
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|super= Brian Lingg
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|phone=(805)839-3918x210
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|location=Bay 3
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|email=lingg@ece.ucsb.edu
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|description = PECVD Plasma Therm 790 For Oxides And Nitrides
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|manufacturer = Plasma-Therm
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|materials =
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}}
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= About  =
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Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, near atmospheric pressure anneals in Nitrogen, Forming Gas (10%H<sub>2</sub> / 90%N<sub>2</sub>), or Dry Air (~ 10%O<sub>2</sub> / ~ 90%N<sub>2</sub>) can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.
  
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= Detailed Specifications  =
  
Max temp/Time
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*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 1 min. Nitrogen, Forming Gas, Dry Air at flows up to 10000 lpm TC use for anneals up to 1000°C Pyrometer for temperatures above 400°C
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*Windows-based process monitoring and control software by Sedona Visual Controls
  
1000C = 1 Hour
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=Max temp/Time=
1100C = 10 min
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1200C = 3 min
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{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
1300C = 10 seconds
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|-
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|width="100"|Temperature||width="75"|Time
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|-
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|1000°C || 1 Hour
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|-
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|1100°C||10 min  
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|-
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|1200°C ||3 min  
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|-
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|1300°C|| 10 sec
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|-
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|}

Revision as of 06:49, 2 July 2012

Rapid Thermal Processor (AET RX6)
PECVD1.jpg
Tool Type Vacuum Deposition
Location Bay 3
Supervisor Brian Lingg
Supervisor Phone (805) 893-8145
Supervisor E-Mail lingg_b@ucsb.edu
Description PECVD Plasma Therm 790 For Oxides And Nitrides
Manufacturer Plasma-Therm
Vacuum Deposition Recipes


About

Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, near atmospheric pressure anneals in Nitrogen, Forming Gas (10%H2 / 90%N2), or Dry Air (~ 10%O2 / ~ 90%N2) can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

Detailed Specifications

  • Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 1 min. Nitrogen, Forming Gas, Dry Air at flows up to 10000 lpm TC use for anneals up to 1000°C Pyrometer for temperatures above 400°C
  • Windows-based process monitoring and control software by Sedona Visual Controls

Max temp/Time

Temperature Time
1000°C 1 Hour
1100°C 10 min
1200°C 3 min
1300°C 10 sec