Difference between revisions of "RIE Etching Recipes"
Jump to navigation
Jump to search
(→RIE 5 (PlasmaTherm): added Photoressit & ARC etching, copied from DUV Litho recipes page) |
|||
| Line 3: | Line 3: | ||
=[[RIE 2 (MRC)]] = |
=[[RIE 2 (MRC)]] = |
||
==CdZnTe Etching (RIE 2)== |
==CdZnTe Etching (RIE 2)== |
||
| − | *[[media:11- |
+ | *[[media:11-CZT etching-1.pdf|CdZnTe Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar]] |
==ZnS Etching (RIE 2)== |
==ZnS Etching (RIE 2)== |
||
| − | *[[media: |
+ | *[[media:ZnS Plasma Etch-1.pdf|ZnS Etch Recipe - CH<sub>4</sub>-H<sub>2</sub>-Ar]] |
==ITO Etching (RIE 2)== |
==ITO Etching (RIE 2)== |
||
| Line 22: | Line 22: | ||
=[[RIE 5 (PlasmaTherm)]] = |
=[[RIE 5 (PlasmaTherm)]] = |
||
==AlGaAs\GaAs Etching (RIE 5)== |
==AlGaAs\GaAs Etching (RIE 5)== |
||
| − | *[[media:13-GaAs- |
+ | *[[media:13-GaAs-AlGaAs Etching-RIE-5.pdf|GaAs\AlGaAs Etch Recipes - BCl<sub>3</sub>-SiCl<sub>4</sub>]] |
==GaN Etching (RIE 5)== |
==GaN Etching (RIE 5)== |
||
| − | *[[media:08- |
+ | *[[media:08-Plasma Etching of GaN-RIE5.pdf|GaN Etch Recipes - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar]] |
| + | |||
| + | == Photoresist and ARC == |
||
| + | |||
| + | === DUV42P (AR2) etching: === |
||
| + | * O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec |
||
| + | * No need to pump/purge, can etch right away. |
||
| + | * No helium cooling, Run in manual mode. |
||
Revision as of 18:12, 28 September 2018
Back to Dry Etching Recipes.
RIE 1 (Custom)
RIE 2 (MRC)
CdZnTe Etching (RIE 2)
ZnS Etching (RIE 2)
ITO Etching (RIE 2)
InP-InGaAsP-InGaAlAs Etching (RIE 2)
RIE 3 (MRC)
SiO2 Etching (RIE 3)
SiNx Etching (RIE 3)
RIE 5 (PlasmaTherm)
AlGaAs\GaAs Etching (RIE 5)
GaN Etching (RIE 5)
Photoresist and ARC
DUV42P (AR2) etching:
- O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
- No need to pump/purge, can etch right away.
- No helium cooling, Run in manual mode.