Difference between revisions of "RIE Etching Recipes"

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{{recipes}}
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{{recipes|Dry Etching}}
=[[RIE 1 (Custom)]] =
 
 
=[[RIE 2 (MRC)]] =
 
=[[RIE 2 (MRC)]] =
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==CdZnTe Etching (RIE 2)==
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*[//wiki.nanotech.ucsb.edu/w/images/f/f5/11-CZT_etching-1.pdf CdZnTe Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar]
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==ZnS Etching (RIE 2)==
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*[//wiki.nanotech.ucsb.edu/w/images/b/b4/ZnS_Plasma_Etch-1.pdf ZnS Etch Recipe - CH<sub>4</sub>-H<sub>2</sub>-Ar]
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==ITO Etching (RIE 2)==
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*[//wiki.nanotech.ucsb.edu/w/images/f/f4/RIE2-ITO-Etch-MHA-Plasma-RevA.pdf ITO Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar]
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==InP-InGaAsP-InGaAlAs Etching (RIE 2)==
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*[//wiki.nanotech.ucsb.edu/w/images/6/6f/RIE2-InGaAs-InP-InAlAs-Etch-Plasma-RIE-RevA.pdf InP-InGaAsP-InAlGaAs Etch Recipes - CH<sub>4</sub>-H<sub>2</sub>-Ar]
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=[[RIE 3 (MRC)]] =
 
=[[RIE 3 (MRC)]] =
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==SiO<sub>2</sub> Etching (RIE 3)==
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*[//wiki.nanotech.ucsb.edu/w/images/2/2f/SiO2-Etch-Recipe-using-RIE-3-a.pdf SiO<sub>2</sub> Etch Recipe with a very low surface damage - CHF<sub>3]
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==SiN<sub>x</sub> Etching (RIE 3)==
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*[//wiki.nanotech.ucsb.edu/w/images/9/98/51-SiNx-Etch-Recipe-using-RIE3.pdf SiN<sub>x</sub> Etch Recipe with a very low surface damage - CHF<sub>3]
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=[[RIE 5 (PlasmaTherm)]] =
 
=[[RIE 5 (PlasmaTherm)]] =
=[[Si Deep RIE (PlasmaTherm/Bosch Etch)]]=
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==AlGaAs\GaAs Etching (RIE 5)==
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*[//wiki.nanotech.ucsb.edu/w/images/b/b5/13-GaAs-AlGaAs_Etching-RIE-5.pdf GaAs\AlGaAs Etch Recipes - BCl<sub>3</sub>-SiCl<sub>4</sub>]
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==GaN Etching (RIE 5)==
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*[//wiki.nanotech.ucsb.edu/w/images/c/cb/08-Plasma_Etching_of_GaN-RIE5.pdf GaN Etch Recipes - Cl<sub>2</sub>-BCl<sub>3</sub>-Ar]
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== Photoresist and ARC (RIE 5) ==
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=== DUV42P (AR2) etching ===
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* O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
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* No need to pump/purge, can etch right away.
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* No helium cooling, Run in manual mode.

Latest revision as of 10:02, 14 June 2021