Difference between revisions of "RIE 5 (PlasmaTherm)"

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{{tool|{{PAGENAME}}
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{{tool2|{{PAGENAME}}
 
|picture=RIE5.jpg
 
|picture=RIE5.jpg
 
|type = Dry Etch
 
|type = Dry Etch
|super= Brian Lingg
+
|super= Aidan Hopkins
|phone= 805-893-3918x 210
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|super2= Bill Millerski
 
|location=Bay 2
 
|location=Bay 2
|email=lingg@ucsb.ece.ucsb.edu
 
 
|description = RIE #5 Programmable, Loadlocked Chlorine-Based System
 
|description = RIE #5 Programmable, Loadlocked Chlorine-Based System
 
|manufacturer = Plasmatherm (Unaxis)
 
|manufacturer = Plasmatherm (Unaxis)
 +
|model = SLT 770
 
|materials =  
 
|materials =  
 
|toolid=27
 
|toolid=27
 
}}  
 
}}  
= About =
+
==About==
 
This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and Cr layers. Good masking materials for the chlorine-based etching are photoresist (at powers &lt; 200 W), Ni, SiO<sub>2</sub>, and SrF<sub>2</sub>. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished.  
 
This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and Cr layers. Good masking materials for the chlorine-based etching are photoresist (at powers &lt; 200 W), Ni, SiO<sub>2</sub>, and SrF<sub>2</sub>. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished.  
  
 
Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.
 
Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.
  
= Detailed Specifications =
+
==Detailed Specifications==
  
*Etch gases include: Cl<sub>2</sub>, BCl<sub>3</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, Ar  
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*Etch gases include: Cl<sub>2</sub>, BCl<sub>3</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, Ar
*Full computer control or manual computer control  
+
*Full computer control or manual computer control
*Low 1 E-7 ultimate chamber pressure  
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*Low 1 E-7 ultimate chamber pressure
*13.56 Mhz excitation frequency  
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*13.56 Mhz excitation frequency
*Sample chuck He-backside cooled / heated (up to 80°C)  
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*Sample chuck He-backside cooled / heated (up to 80°C)
*Typical etch conditions for GaAs:  
+
*Laser Etch monitor: large spot size, no camera/alignment method.
**10 mT (15 sccm BCl<sub>3</sub> / 10 sccm SiCl<sub>4</sub>)
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**Requires full ~1cm witness sample/area in center of wafer.
**100 W, constant power
+
 
**60 nm / min. etch rate
+
==Documentation==
  
=Documentation=
 
 
*[[RIE5 - Standard Operating procedure (Cortex Software)|RIE#5: Standard Operating Procedure (Cortex Software)]]
 
*[[RIE5 - Standard Operating procedure (Cortex Software)|RIE#5: Standard Operating Procedure (Cortex Software)]]
 
*{{file|How to restart the software on RIE.pdf|How to restart the software on RIE #5}}
 
*{{file|How to restart the software on RIE.pdf|How to restart the software on RIE #5}}
 +
 +
==Recipes==
 +
You can find dry etch recipes on '''Recipes > Dry Etch > [[RIE Etching Recipes#RIE 5 .28PlasmaTherm.29|<u>RIE5 Recipes</u>]]'''
 +
 +
Typical etch conditions for GaAs:
 +
 +
*10 mT (15 sccm BCl<sub>3</sub> / 10 sccm SiCl<sub>4</sub>)
 +
*100 W, constant power
 +
*60 nm / min. etch rate

Latest revision as of 09:54, 28 November 2022

RIE 5 (PlasmaTherm)
RIE5.jpg
Location Bay 2
Tool Type Dry Etch
Manufacturer Plasmatherm (Unaxis)
Model SLT 770
Description RIE #5 Programmable, Loadlocked Chlorine-Based System

Primary Supervisor Aidan Hopkins
(805) 893-2343
hopkins@ece.ucsb.edu

Secondary Supervisor

Bill Millerski


Recipes Dry Etch RecipesN/A

SignupMonkey: Sign up for this tool


About

This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and Cr layers. Good masking materials for the chlorine-based etching are photoresist (at powers < 200 W), Ni, SiO2, and SrF2. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished.

Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.

Detailed Specifications

  • Etch gases include: Cl2, BCl3, SiCl4, O2, Ar
  • Full computer control or manual computer control
  • Low 1 E-7 ultimate chamber pressure
  • 13.56 Mhz excitation frequency
  • Sample chuck He-backside cooled / heated (up to 80°C)
  • Laser Etch monitor: large spot size, no camera/alignment method.
    • Requires full ~1cm witness sample/area in center of wafer.

Documentation

Recipes

You can find dry etch recipes on Recipes > Dry Etch > RIE5 Recipes

Typical etch conditions for GaAs:

  • 10 mT (15 sccm BCl3 / 10 sccm SiCl4)
  • 100 W, constant power
  • 60 nm / min. etch rate