Difference between revisions of "RIE 5 (PlasmaTherm)"
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+ | {{tool2|{{PAGENAME}} |
|picture=RIE5.jpg |
|picture=RIE5.jpg |
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|type = Dry Etch |
|type = Dry Etch |
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| − | |super= |
+ | |super= Aidan Hopkins |
| + | |super2= Bill Millerski |
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| − | |phone= 805-893-3918x216 |
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|location=Bay 2 |
|location=Bay 2 |
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| − | |email=freeborn@ece.ucsb.edu |
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|description = RIE #5 Programmable, Loadlocked Chlorine-Based System |
|description = RIE #5 Programmable, Loadlocked Chlorine-Based System |
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|manufacturer = Plasmatherm (Unaxis) |
|manufacturer = Plasmatherm (Unaxis) |
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| + | |model = SLT 770 |
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|materials = |
|materials = |
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|toolid=27 |
|toolid=27 |
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}} |
}} |
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| − | = |
+ | ==About== |
| − | This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and |
+ | This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and Cr layers. Good masking materials for the chlorine-based etching are photoresist (at powers < 200 W), Ni, SiO<sub>2</sub>, and SrF<sub>2</sub>. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished. |
Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc. |
Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc. |
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| − | = |
+ | ==Detailed Specifications== |
| − | *Etch gases include: Cl<sub>2</sub>, BCl<sub>3</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, Ar |
+ | *Etch gases include: Cl<sub>2</sub>, BCl<sub>3</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, Ar |
| − | *Full computer control or manual computer control |
+ | *Full computer control or manual computer control |
| − | *Low 1 E-7 ultimate chamber pressure |
+ | *Low 1 E-7 ultimate chamber pressure |
| − | *13.56 Mhz excitation frequency |
+ | *13.56 Mhz excitation frequency |
| − | *Sample chuck He-backside cooled / heated (up to 80°C) |
+ | *Sample chuck He-backside cooled / heated (up to 80°C) |
| + | *Laser Etch monitor: large spot size, no camera/alignment method. |
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| + | **Requires full ~1cm witness sample/area in center of wafer. |
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| − | =Documentation= |
+ | ==Documentation== |
| + | |||
| + | *[[RIE5 - Standard Operating procedure (Cortex Software)|RIE#5: Standard Operating Procedure (Cortex Software)]] |
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*{{file|How to restart the software on RIE.pdf|How to restart the software on RIE #5}} |
*{{file|How to restart the software on RIE.pdf|How to restart the software on RIE #5}} |
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| + | |||
| + | ==Recipes== |
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| + | You can find dry etch recipes on '''Recipes > Dry Etch > [[RIE Etching Recipes#RIE 5 .28PlasmaTherm.29|<u>RIE5 Recipes</u>]]''' |
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Latest revision as of 10:54, 28 November 2022
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About
This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and Cr layers. Good masking materials for the chlorine-based etching are photoresist (at powers < 200 W), Ni, SiO2, and SrF2. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished.
Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.
Detailed Specifications
- Etch gases include: Cl2, BCl3, SiCl4, O2, Ar
- Full computer control or manual computer control
- Low 1 E-7 ultimate chamber pressure
- 13.56 Mhz excitation frequency
- Sample chuck He-backside cooled / heated (up to 80°C)
- Laser Etch monitor: large spot size, no camera/alignment method.
- Requires full ~1cm witness sample/area in center of wafer.
Documentation
Recipes
You can find dry etch recipes on Recipes > Dry Etch > RIE5 Recipes
Typical etch conditions for GaAs:
- 10 mT (15 sccm BCl3 / 10 sccm SiCl4)
- 100 W, constant power
- 60 nm / min. etch rate