Difference between revisions of "RIE 2 (MRC)"
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| − | {{ |
+ | {{tool2|{{PAGENAME}} |
| − | |picture= |
+ | |picture=RIE2.jpg |
| + | |type = Dry Etch |
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| − | |type = Inspection, Test and Characterization |
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| − | |super= |
+ | |super= Lee Sawyer |
| + | |super2= Aidan Hopkins |
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| − | |phone= |
+ | |phone= 805-893-2123 |
| − | |location=Bay |
+ | |location=Bay 2 |
| − | |email= |
+ | |email=lee_sawyer@ucsb.edu |
| − | |description = JEOL 7600F FESEM |
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| + | |description = RIE #2 Methane/Hydrogen-Based System |
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| − | |manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc] |
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| + | |manufacturer = Materials Research Corporation (MRC) |
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|materials = |
|materials = |
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| − | |toolid= |
+ | |toolid=25 |
}} |
}} |
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| − | = |
+ | ==About== |
| + | |||
This is a Materials Research Corporation RIE-51 parallel plate, 13.56 Mhz system used primarily for the etching of InP with CH<sub>4</sub>/H<sub>2</sub>/Ar gases, although it can be used to etch As- and Sb-based III-V compounds and a variety of II-VI semiconductors as well. For Al-containing compounds and II-VI compounds, high bias power is required. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed bias or power control and HeNe laser etch monitor with chart recorder. It is diffusion pumped and has no loadlock. Various etching applications have included: in-plane lasers/facets, InP-based HBTs, FET gate recessing, InP-based quantum microcavities, Bragg-Fresnel x-ray lenses and waveguides. |
This is a Materials Research Corporation RIE-51 parallel plate, 13.56 Mhz system used primarily for the etching of InP with CH<sub>4</sub>/H<sub>2</sub>/Ar gases, although it can be used to etch As- and Sb-based III-V compounds and a variety of II-VI semiconductors as well. For Al-containing compounds and II-VI compounds, high bias power is required. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed bias or power control and HeNe laser etch monitor with chart recorder. It is diffusion pumped and has no loadlock. Various etching applications have included: in-plane lasers/facets, InP-based HBTs, FET gate recessing, InP-based quantum microcavities, Bragg-Fresnel x-ray lenses and waveguides. |
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RIE of InP and related compounds can be achieved with a hydride-based process chemistry of methane/hydrogen with an etching mechanism due to a "reverse" metalorganic CVD reaction. Because both etching and deposition occur simultaneously, it is important to use the proper gas flows and to periodically remove any polymer reaction by-products deposited on the non-etched (mask) surfaces. (This system has an additional flow circuit in order to bleed in small amounts, <1 sccm, of O<sub>2</sub>). Alternatively, one can perform cyclic etching between MHA and O<sub>2</sub> to keep polymer formation to a minimum. With this technique selectivity is quite high and anisotropic etching can be achieved. While a metal, dielectric or photoresist may be used as a mask, photoresist should only be used at low bias voltages in order to avoid mask pattern distortions due to reflow. A precoat etch should be done before etching to condition the chamber. |
RIE of InP and related compounds can be achieved with a hydride-based process chemistry of methane/hydrogen with an etching mechanism due to a "reverse" metalorganic CVD reaction. Because both etching and deposition occur simultaneously, it is important to use the proper gas flows and to periodically remove any polymer reaction by-products deposited on the non-etched (mask) surfaces. (This system has an additional flow circuit in order to bleed in small amounts, <1 sccm, of O<sub>2</sub>). Alternatively, one can perform cyclic etching between MHA and O<sub>2</sub> to keep polymer formation to a minimum. With this technique selectivity is quite high and anisotropic etching can be achieved. While a metal, dielectric or photoresist may be used as a mask, photoresist should only be used at low bias voltages in order to avoid mask pattern distortions due to reflow. A precoat etch should be done before etching to condition the chamber. |
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| − | = |
+ | ==Detailed Specifications== |
| − | *Etch gases include: CH<sub>4</sub>, H<sub>2</sub>, Ar and O<sub>2</sub> |
+ | *Etch gases include: CH<sub>4</sub>, H<sub>2</sub>, Ar and O<sub>2</sub> |
| − | *Low 1 E -6 ultimate chamber pressure |
+ | *Low 1 E -6 ultimate chamber pressure |
| − | *13.56 Mhz excitation frequency |
+ | *13.56 Mhz excitation frequency |
| − | *Sample size limited to approximately 2 inches |
+ | *Sample size limited to approximately 2 inches |
| − | *HeNe and IR laser monitoring for endpoint |
+ | *HeNe and IR laser monitoring for endpoint |
| − | *Automatic tuning network |
+ | *Automatic tuning network |
| − | *DC Bias or RF power control |
+ | *DC Bias or RF power control |
| − | *Masking materials include: Ni, SiON, photoresist (limited to low bias/power) |
+ | *Masking materials include: Ni, SiON, photoresist (limited to low bias/power) |
*Typical etch conditions for InGaAsP: |
*Typical etch conditions for InGaAsP: |
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| − | **75 mT (CH<sub>4</sub>/H<sub>2</sub>/Ar : 4/20/10 sccm) |
+ | **75 mT (CH<sub>4</sub>/H<sub>2</sub>/Ar : 4/20/10 sccm) |
| − | **450v bias |
+ | **450v bias |
**~ 45 nm/min. etch rate |
**~ 45 nm/min. etch rate |
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| + | |||
| + | ==Documentation== |
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| + | |||
| + | *[https://wiki.nanofab.ucsb.edu/w/images/8/84/RIE_2_SOP_Rev_D.pdf RIE #2 Standard Operating Procedure] |
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Latest revision as of 07:55, 21 July 2023
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About
This is a Materials Research Corporation RIE-51 parallel plate, 13.56 Mhz system used primarily for the etching of InP with CH4/H2/Ar gases, although it can be used to etch As- and Sb-based III-V compounds and a variety of II-VI semiconductors as well. For Al-containing compounds and II-VI compounds, high bias power is required. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed bias or power control and HeNe laser etch monitor with chart recorder. It is diffusion pumped and has no loadlock. Various etching applications have included: in-plane lasers/facets, InP-based HBTs, FET gate recessing, InP-based quantum microcavities, Bragg-Fresnel x-ray lenses and waveguides.
RIE of InP and related compounds can be achieved with a hydride-based process chemistry of methane/hydrogen with an etching mechanism due to a "reverse" metalorganic CVD reaction. Because both etching and deposition occur simultaneously, it is important to use the proper gas flows and to periodically remove any polymer reaction by-products deposited on the non-etched (mask) surfaces. (This system has an additional flow circuit in order to bleed in small amounts, <1 sccm, of O2). Alternatively, one can perform cyclic etching between MHA and O2 to keep polymer formation to a minimum. With this technique selectivity is quite high and anisotropic etching can be achieved. While a metal, dielectric or photoresist may be used as a mask, photoresist should only be used at low bias voltages in order to avoid mask pattern distortions due to reflow. A precoat etch should be done before etching to condition the chamber.
Detailed Specifications
- Etch gases include: CH4, H2, Ar and O2
- Low 1 E -6 ultimate chamber pressure
- 13.56 Mhz excitation frequency
- Sample size limited to approximately 2 inches
- HeNe and IR laser monitoring for endpoint
- Automatic tuning network
- DC Bias or RF power control
- Masking materials include: Ni, SiON, photoresist (limited to low bias/power)
- Typical etch conditions for InGaAsP:
- 75 mT (CH4/H2/Ar : 4/20/10 sccm)
- 450v bias
- ~ 45 nm/min. etch rate