Difference between revisions of "RIE 2 (MRC)"
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+ | ==About== |
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RIE of InP and related compounds can be achieved with a hydride-based process chemistry of methane/hydrogen with an etching mechanism due to a "reverse" metalorganic CVD reaction. Because both etching and deposition occur simultaneously, it is important to use the proper gas flows and to periodically remove any polymer reaction by-products deposited on the non-etched (mask) surfaces. (This system has an additional flow circuit in order to bleed in small amounts, <1 sccm, of O<sub>2</sub>). Alternatively, one can perform cyclic etching between MHA and O<sub>2</sub> to keep polymer formation to a minimum. With this technique selectivity is quite high and anisotropic etching can be achieved. While a metal, dielectric or photoresist may be used as a mask, photoresist should only be used at low bias voltages in order to avoid mask pattern distortions due to reflow. A precoat etch should be done before etching to condition the chamber. |
RIE of InP and related compounds can be achieved with a hydride-based process chemistry of methane/hydrogen with an etching mechanism due to a "reverse" metalorganic CVD reaction. Because both etching and deposition occur simultaneously, it is important to use the proper gas flows and to periodically remove any polymer reaction by-products deposited on the non-etched (mask) surfaces. (This system has an additional flow circuit in order to bleed in small amounts, <1 sccm, of O<sub>2</sub>). Alternatively, one can perform cyclic etching between MHA and O<sub>2</sub> to keep polymer formation to a minimum. With this technique selectivity is quite high and anisotropic etching can be achieved. While a metal, dielectric or photoresist may be used as a mask, photoresist should only be used at low bias voltages in order to avoid mask pattern distortions due to reflow. A precoat etch should be done before etching to condition the chamber. |
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+ | ==Detailed Specifications== |
| − | *Etch gases include: CH<sub>4</sub>, H<sub>2</sub>, Ar and O<sub>2</sub> |
+ | *Etch gases include: CH<sub>4</sub>, H<sub>2</sub>, Ar and O<sub>2</sub> |
| − | *Low 1 E -6 ultimate chamber pressure |
+ | *Low 1 E -6 ultimate chamber pressure |
| − | *13.56 Mhz excitation frequency |
+ | *13.56 Mhz excitation frequency |
| − | *Sample size limited to approximately 2 inches |
+ | *Sample size limited to approximately 2 inches |
| − | *HeNe and IR laser monitoring for endpoint |
+ | *HeNe and IR laser monitoring for endpoint |
| − | *Automatic tuning network |
+ | *Automatic tuning network |
| − | *DC Bias or RF power control |
+ | *DC Bias or RF power control |
| − | *Masking materials include: Ni, SiON, photoresist (limited to low bias/power) |
+ | *Masking materials include: Ni, SiON, photoresist (limited to low bias/power) |
*Typical etch conditions for InGaAsP: |
*Typical etch conditions for InGaAsP: |
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| − | **75 mT (CH<sub>4</sub>/H<sub>2</sub>/Ar : 4/20/10 sccm) |
+ | **75 mT (CH<sub>4</sub>/H<sub>2</sub>/Ar : 4/20/10 sccm) |
| − | **450v bias |
+ | **450v bias |
**~ 45 nm/min. etch rate |
**~ 45 nm/min. etch rate |
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| + | |||
| + | == Procedures == |
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| + | RIE #2 Standard Operating Procedure |
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Revision as of 15:01, 11 September 2019
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About
This is a Materials Research Corporation RIE-51 parallel plate, 13.56 Mhz system used primarily for the etching of InP with CH4/H2/Ar gases, although it can be used to etch As- and Sb-based III-V compounds and a variety of II-VI semiconductors as well. For Al-containing compounds and II-VI compounds, high bias power is required. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed bias or power control and HeNe laser etch monitor with chart recorder. It is diffusion pumped and has no loadlock. Various etching applications have included: in-plane lasers/facets, InP-based HBTs, FET gate recessing, InP-based quantum microcavities, Bragg-Fresnel x-ray lenses and waveguides.
RIE of InP and related compounds can be achieved with a hydride-based process chemistry of methane/hydrogen with an etching mechanism due to a "reverse" metalorganic CVD reaction. Because both etching and deposition occur simultaneously, it is important to use the proper gas flows and to periodically remove any polymer reaction by-products deposited on the non-etched (mask) surfaces. (This system has an additional flow circuit in order to bleed in small amounts, <1 sccm, of O2). Alternatively, one can perform cyclic etching between MHA and O2 to keep polymer formation to a minimum. With this technique selectivity is quite high and anisotropic etching can be achieved. While a metal, dielectric or photoresist may be used as a mask, photoresist should only be used at low bias voltages in order to avoid mask pattern distortions due to reflow. A precoat etch should be done before etching to condition the chamber.
Detailed Specifications
- Etch gases include: CH4, H2, Ar and O2
- Low 1 E -6 ultimate chamber pressure
- 13.56 Mhz excitation frequency
- Sample size limited to approximately 2 inches
- HeNe and IR laser monitoring for endpoint
- Automatic tuning network
- DC Bias or RF power control
- Masking materials include: Ni, SiON, photoresist (limited to low bias/power)
- Typical etch conditions for InGaAsP:
- 75 mT (CH4/H2/Ar : 4/20/10 sccm)
- 450v bias
- ~ 45 nm/min. etch rate
Procedures
RIE #2 Standard Operating Procedure