Publications - 2013-2014

Outside user publication

1. H. Vandeparre, M. Piñeirua, F. Brau, B. Roman, J. Bico, C. Gay, W. Bao, C. N. Lau, P. M. Reis, and P. Damman, “Wrinkling Hierarchy in Constrained Thin Sheets from Suspended Graphene to Curtains,” Phys. Rev. Lett. 106, 224301 (2011). [University of California, Riverside]
2. W. Bao, Z. Zhao, H. Zhang, G. Liu, P. Kratz, L. Jing, J. Velasco Jr, D. Smirnov, C.N. Lau, “Magnetoconductance Oscillations and Evidence for Fractional Quantum Hall States in High- Mobility Suspended Bilayer and Trilayer Graphene,” Phys. Rev. Lett. 105, 246601 (2010). [University of California, Riverside]
3. Daniel A. Fuhrmann, Susanna M. Thon, Hyochul Kim, Dirk Bouwmeester, Pierre M. Petroff, Achim Wixforth and Hubert J. Krenner, “Dynamic modulation of photonic crystal nanocavities using gigahertz acoustic phonons,” Nature Photonics, (2011). [UC Santa Barbara]
4. Adam Bushmaker, Chai-Chi Chang, Vikram Deshpande, Moh Amer, Marc Bockrath, and Stephen Cronin, “Memristive behavior observed in defected single-walled carbon nanotubes,” IEEE Transactions on Nanotechnology 10(3), 582-586 (2011). [University of Southern California]
5. Zuwei Liu, Adam Bushmaker, Mehmet Aykol, and Stephen B. Cronin,“ Thermal Emission Spectra from Individual Suspended Carbon Nanotubes,” ACS Nano 5(6), 4634–4640 (2011). [University of Southern California]
6. M. MacDougal, J. Geske, C. Wang, D. Follman, “Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators,” Optical Engineering 50(6), (2011).
7. D. T. H. Tan, K. Ikeda, S. Zamek, A. Mizrahi, M.P. Nezhad, A.V. Krishnamoorthy, K. Raj, J.E. Cunningham, X. Zheng, I. Shubin, Y. Luo and Y. Fainman, "Wide bandwidth, low loss 1 by 4 wavelength division multiplexer on silicon for optical interconnects," Opt. Express. 19, 2401-2409 (2011). [UC San Diego]
8. S. Zamek, D. Tan, M. Khajavikhan, M. Ayach, M.P Nezhad, and Y. Fainman, "Compact chip- scale filter based on curved waveguide Bragg gratings," Optics Letters 35(20), 3477-3479 (2010). [UC San Diego]
9. D.T.H. Tan, P.C. Sun and Y. Fainman, "Monolithic nonlinear pulse compressor on a silicon chip,"Nature Communications 1, 116, (2010). [UC San Diego]
10. Steve Zamek, Liang Feng, Mercedeh Khajavikhan, Dawn T. H. Tan, Maurice Ayache, and Yeshaiahu Fainman, "Micro-resonator with metallic mirrors coupled to a bus waveguide," Opt. Express 19, 2417-2425 (2011). [UC San Diego]
11. S. Zamek, D. T. Tan, M. Khajavikhan, M. P. Nezhad, and Y. Fainman, "Curved Waveguide Bragg Gratings on a Chip," in Frontiers in Optics, OSA Technical Digest (CD), paper FMH4, (2010). [UC San Diego]
12. M. Ayache, M.P. Nezhad, S. Zamek, M. Abashin, Y. Fainman, "Near-Field Measurement of Amplitude and Phase in Silicon Waveguides with Liquid Cladding," Optics Letters 36, 1869-1871 (2011). [UC San Diego]
13. O. Bondarenko, A. Simic, Q. Gu, J. H. Lee, B. Slutsky, M. P. Nezhad, and Y. Fainman, “Wafer Bonded Subwavelength Metallo-Dielectric Laser,” IEEE Photonics Journal 3(3), 608-616 (2011). [UC San Diego]
14. M. Troccoli, X. Wang, and J. Fan, “Quantum cascade lasers: high-power emission and single- mode operation in the long-wave infrared (λ>6 μm),” Opt. Eng. 49, 111106 (2010). Invited.
15. Zenghui Wang, Peter Morse, Jiang Wei, Oscar E. Vilches and David H. Cobden, "Phase transitions on the surface of a carbon nanotube,” Science 327, 552 (2010). [University of Washington]

1. D. Hobbs, B. MacLeod, E. Sabatino, T. Hartnett, R. Gentilman, “Laser damage resistant anti- reflection microstructures in Raytheon ceramic YAG, sapphire, ALON, and quartz,” SPIE 8016, (2011).
2. B.MacLeod, D. Hobbs, E. Sabatino, “Moldable AR microstructures for improved laser transmission and damage resistance in CIRCM fiber optic beam delivery systems,” SPIE 8016, (2011).
3. V.Jayaraman, J. Jiand, H.Li, P.J.S. Heim, G.D. Cole, B. Potsaid, J.G. Fujimoto, and A.Cable, “OCT Imaging up to 760 kHz Axial Scan Rate Using Single-Mode 1310nm MEMS-Tunable VCSELs with >100nm Tuning Range,” CLEO, (2011).
4. Mani Sundaram, Axel Reisinger, Richard Dennis, Kelly Patnaude, Douglas Burrows, Jason Bundas, Kim Beech, Ross Faska, “Status of quantum well infrared photodetector technology at QmagiQ today,” Infrared Physics & Technology 54(3), 194-198 (2011).
5. Mani Sundaram, Axel Reisinger, Richard Dennis, Kelly Patnaude, Douglas Burrows, Jason Bundas, Kim Beech, Ross Faska, “Longwave infrared focal plane arrays from type-II strained layer superlattices,” Infrared Physics & Technology 54(3), 243-246(2011).
6. A. Eichler, J. Moser, J. Chaste, M. Zdrojek, I. Wilson-Rae, and A. Bachtold, “Nonlinear Damping in Mechanical Resonators Made from Carbon Nanotubes and Graphene,” Nature Nanotechnology6, 399 (2011).
7. A. Eichler, J. Chaste, J. Moser, and A. Bachtold, “Parametric Amplification and Self-Oscillation in a Nanotube Mechanical Resonator,” Nano Letters 11, 2699 (2011).
8. H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, "Device and Integration Technology for Silicon Photonic Transmitters," IEEE Journal of Selected Topics in Quantum Electronics17(3), 671-688, (2011).
9. D. Liang, D. C. Chapman, Y. Li, D. C. Oakley, T. Napoleone, P. W. Juodawlkis, C. Brubaker, C. Mann, H. Bar, O. Raday, J. E. Bowers, "Uniformity study of wafer-scale InP-to- silicon hybrid integration," Applied Physics A: Materials Science & Processing 103, 213-218, (2010).

Outside user conference presentations

1. Stefan Lauxtermann and Dirk Leipold, “Backside illuminated CMOS shutter unage ib 50 um thick resistivity silicon,” 2011 International Image Sensor Workshop (IISW), Japan, 2011.
2. D. A. Fuhrmann, H. Kim, S. M. Thon, et al., "High-frequency tuning of photonic crystal defect cavity modes using surface acoustic waves,” Proc. SPIE 7609, 760908, San Francisco, California, 2010. [University of Augsburg, Germany]
3. Mingguang Tuo, Lu Wang, Moh. R. Amer, Xiaoju Yu, Stephen B. Cronin, Hao Xin, “Microwave Properties of Suspended Single-Walled Carbon Nanotubes with a Field-effectTransistor Configuration,” IEEE International Microwave Symposium, 2010. [University of Southern California]
4. Moh Amer, Adam Bushmaker, Stephen Cronin, “Anomalous Current-Voltage Characteristics in Suspended Carbon Nanotubes and Phonon Relaxation Dynamics,” APS March Meeting Carbon Nanotubes and Related Materials: Devices I, 2011. [University of Southern California]
5. Zuwei Liu, Adam Bushmaker, Mehmet Aykol, Stephen Cronin,” Thermal Emission of Suspended Carbon Nanotube,” APS March Meeting Carbon Nanotubes and Related Materials: Devices I,2011. [University of Southern California]
6. Mehmet Aykol, William Branham, Zuwei Liu, Moh Amer, I-Kai Hsu, Rohan Dhall, Shun-Wen Chang, Stephen Cronin, “Anomalous Electromechanical Resonance Behavior of Single-walled

Carbon Nanotubes under High Bias Voltages,” APS March Meeting Nanowires and Nanotubes:

Thermal and Mechanical Properties, 2011 [University of Southern California]

1. M. MacDougal, J. Geske, J. Wang, D. Follman, J. Manzo, J. Getty, “InGaAs focal plane arrays for low light level SWIR Imaing,” presented at the 2011 SPIE Defense and Security Symposium, Orlando, FL, April 25-29, 2011.
2. Y. Wang, A. Grieco, B. Slutsky, Y. Fainman, T. Nguyen, "Design and analysis of a narrowband filter for optical paltform," Proceedings of the 36th International Conference on Acoustics, Speech and Signal Processing (IEEE), 2011. [UC San Diego]
3. Y. Wang, A. Grieco, B. Slutsky, B. Rao, Y. Fainman, and T. Nguyen, "Stochastic Model on the Post-Fabrication Error for a Bragg Reflectors Based Photonic Allpass Filter," Global Communications Conference Exhibition and Discovery Forum (IEEE), 2011. [UC San Diego]
4. Mariano Troccoli, Xiaojun Wang, and Jenyu Fan, “Highly power efficient distributed feedback quantum cascade lasers at 4.55um,” Proceedings of the SPIE, Photonics West 2011, San Francisco, CA., Jan 2011.
5. L. Bowei Zhang, K.Korman, Mona Zaghloul, "High sensitive circular Hall Effect sensor for magnetic bead labeled immunoassay,” Proceedings of the IEEE Sensor conference, Hawai, October 2010. [George Washington University]
6. A.C. Scofield, J.N. Shapiron, S-H Kim, P.S. Wong, B.L. Liang, A. Scherer, D.L. Huffaker, “Room-temperature operation of bottom-up photonic crystal cavity lasers formed by patterned III- V nanopillars," A. ISCS late paper, Berlin, Germany, May 25, 2011. [UC Los Angeles]
7. A.C. Scofield, S-H Kim, J.N. Shapiro, A. Lin, B.L. Liang, A. Scherer, D.L. Huffaker, "Low- threshold room-temperature lasing in bottom-up photonic crystal cavity formed by patterned III-V nanopillars," DRC late news paper, UC Santa Barbara, June 22, 2011.
8. D.-S. Lin, X. Zhuang, R. Wodnicki, C. G. Woychik, O. Oralkan, M. Kupnik, and B. T. Khuri- Yakub, “Packaging of Large and Low-Pitch Size 2D Ultrasonic Transducer Arrays,” in Proc. 23th IEEE MEMS Conference, Hong Kong, 508-511, 2010. [Stanford]
9. A. M. Mahajan, Anil G. Khairnar, Brian J. Thibeault, “Pt-Ti/ALD-Al2O3/p-Si MOS capacitors for future ULSI technology,” International Symposium on Semiconductor Materials and Devices (ISSMD), 28-30th Jan 2011. [North Maharashtra Univ.]
10. D. Liang, M. Fiorentino, J.E. Bowers, R.G. Beausoleil, "III-V-on-Silicon Hybrid Integration, Materials, Devices, and Applications," IEEE Photonics Society, Winter Topicals, Keystone, CO, January 10-12, 2011.
11. D. Liang, M. Fiorentino, J.E. Bowers, R.G. Beausoleil, "Hybrid Silicon Ring Lasers," SPIE Photonics West, San Francisco, CA., January 22-27, 2011. [UC Santa Barbara]
12. D. Liang, M. Fiorentino, J. E. Bowers, R. G. Beausoleil, "Study of Hybrid Silicon Microring Lasers With Undercut Active Region," IPR, IMB4, Monterey, CA , July 25-28, 2010.
13. D. Liang, J. E. Bowers, M. Fiorentino, and R. G. Beausoleil, "Compact Hybrid Si Microring Lasers," in Photonics West San Francisco, CA., USA, 2010.
14. Milan Mašanović, Leif A. Johansson, Jonathon Barton, “Widely tunable optical transceiver for avionic WDM networks,” AVFOP conference Proceedings, 2011.
15. Leif Johansson, Milan Masanovic, Jonathon S., “Barton dual laser fast wavelength switched optical transmitter,” AVFOP conference proceedings 2010.
16. P. Moeck, T. Bilyeu, J. Straton, K. Hipps, U. Mazur, M. Hietschold, M. Toader, R. Juergen, “Crystallographic STM image processing of 2D periodic and highly symmetric molecule arrays,"Proceedings of the IEEE NANO Conference, 2011.

1. Z. Zhu, S. Grover, K. Krueger and G. Moddel,“Nanoscale geometric diodes for improved rectenna solar cells,” 5th (OSA) International Conference on Nanophotonics, Fudan University, Shanghai, China, May 22-26, 2011.
2. Z. Zhu, S. Grover, K. Krueger, G. Moddel, “Optical Rectenna Solar Cells Using Graphene Geometric Diodes,” IEEE Photovoltaic Specialists Conference, Seattle, WA., June 19-24, 2011.
3. Gang Yu, Chan-Long Shieh, Fatt Foong, et al., “Metal-Oxide Thin Film Transistor with High Performance and Good Operation Stability,” SID Digest 35(4), 483-485, 2011.
4. B. Vermeersch, J.-H. Bahk, J. Christofferson and A. Shakouri, “Design and thermoreflectance imaging of high-speed SiGe superlattice microrefrigerators,” submitted to Mater. Res. Soc. Symp. Proc. (2011).

Internal user publications

1. Ashfaque Uddin, Kaveh Milaninia, Chin-Hsuan Chen, and Luke Thogarajan, “Wafer Scale Integration of CMOS Chips for Biomendical Apprilcations via Self-Aligned Masking,” IEEE Transaction on Compenents, Packaging and Manufacturing Technology, (2011). [UC Santa Barbara]
2. Arkadij M. Elizarov, Carl Meinhart, Reza Miraghaie, et al., “Flow optimization study of a batch microfluidics PET tracer synthesizing device,” Biomed. Microdevices 13, 231-42, 2010. [UC Santa Barbara]
3. C. Luni, H.C. Feldman, M. Pozzobon, et al., “Microliter-bioreactor arrya with buoyancy-driven stirring for human hematopietic stem cell culture, “Accepted Biomicrofluidics 4(3), (2010). [UC Santa Barbara]
4. C. Ding, G. Soni, P. Bozorgi, et al., “A Flat heat pipe based on nanostrucuted titania,“ acceptedJMEMS 19, 1057-7157 (2010). [UC Santa Barbara]
5. Syed Mubeen and Martin Moskovits, “Gate-Tunable Surface Processes on a Single-Nanowire Field-Effect Transistor,” Adv. Mater. 23, 2306–2312 (2011). [UC Santa Barbara]
6. Yichi Zhang, Heng Wang, Stephan Kräemer, Yifeng Shi, et al., “Stucky, Surfactant-Free Synthesis of Bi2Te3-Te Micro-Nano Heterostructure with Enhanced Thermoelectric Figure of Merit,” ACS Nano 5, 3158–3165 (2011). [UC Santa Barbara]
7. Myung Hwa Kim, Jeong Min Baik, Jinping Zhang, et al., “TiO2 Nanowire Growth Driven by Phosphorus-Doped Nanocatalysis,” J. Phys. Chem. C 114, 10697–10702 (2010). [UC Santa Barbara]
8. Jeong Min Baik, Mark Zielke, Myung Hwa Kim, et al. “Tin-Oxide-Nanowire-Based Electronic Nose Using Heterogeneous Catalysis as a Functionalization Strategy,” ACS Nano 4(6), 3117– 3122, (2010). [UC Santa Barbara]
9. Myung Hwa Kim, Jeong Min Baik, Seung Joon Lee, et al., “Growth direction determination of a single RuO2 nanowire by polarized Raman spectroscopy,” Appl. Phys. Lett. 96, 213108 (2010). [UC Santa Barbara]
10. Xuegong Deng, Gary B. Braun, Sheng Liu, et al, “Subwavelength Resonant Nanograting as a Uniformly Hot Substrate for Surface-Enhanced Raman Spectroscopy,” Nano Lett. 10, 1780-1786 (2010). [UC Santa Barbara]
11. R. Engel-Herbert, Y. Hwang, S. Stemmer, “Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces,” Journal of Applied Physics 108, 124101 (2010). [UC Santa Barbara]

1. Y. Hwang, R. Engel-Herbert, N. G. Rudawski, and S. Stemmer, “Effect of post-deposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks,” Journal of Applied Physics 108, 034111 (2010). [UC Santa Barbara]
2. Y. Hwang, V. Chobpattana, J. Y. Zhang, et al, “Al-doped HfO2/In0.53Ga0.47As metal-oxide- semiconductor capacitors,” Applied Physics Letters 98, 142901 (2011). [UC Santa Barbara]
3. Y. Hwang, R. Engel-Herbert, S. Stemmer, “Influence of trimethylaluminum on the growth and properties of HfO2/In0.53Ga0.47As interfaces,” Applied Physics Letters 98, 052911 (2011). [UC Santa Barbara]
4. P. Moetakef, J. Y. Zhang, A. Kozhano et al., “Transport in ferromagnetic GdTiO3/SrTiO3 heterostructures,” Applied Physics Letters 98, 112110 (2011). [UC Santa Barbara]
5. J. Son, J. M. LeBeau, S. J. Allen, S. Stemmer, “Conductivity enhancement of ultrathin LaNiO3 films in superlattices,” Applied Physics Letters 97, 202109 (2010). [UC Santa Barbara]
6. B. Jalan, S. Stemmer, S. Mack, S. J. Allen, “Two-dimensional electron gas in δ-doped SrTiO3,” Physical Review B 82, 081103 (2010). [UC Santa Barbara]
7. B. Jalan, S. J. Allen, G. E. Beltz, P. Moetakef, S. Stemmer, “Enhancing the electron mobility of SrTiO3 with strain,” Applied Physics Letters 98, 132102 (2011). [UC Santa Barbara]
8. G. N. Saddik, J. Son, S. Stemmer, R. A. York, “Improvement of barium strontium titanate solidly mounted resonator quality factor by reduction in electrode surface roughness,” Journal of Applied Physics 109, 091606 (2011). [UC Santa Barbara]
9. A.D. O'Connell, M. Hofheinz, M. Ansmann, et al, "Quantum ground state and single-phonon control of a mechanical resonator," Nature 464, 697-703 (2010). [UC Santa Barbara]
10. R.C. Bialczak, M. Ansmann, M. Hofheinz, et al, "Quantum process tomography of a universal entangling gate implemented with Josephson phase qubits,” Nature Physics 6, 409-413 (2010). [UC Santa Barbara]
11. M. Neeley, R.C. Bialczak, M. Lenander, et al.,"Generation of three-qubit entangled states using superconducting phase qubits,” Nature 467, 570-573 (2010). [UC Santa Barbara]
12. E. Lucero, J. Kelly, R.C. Bialczak, et al.,"Reduced phase error through optimized control of a superconducting qubit," Phys. Rev. A 82, 042339 (2010). [UC Santa Barbara]
13. T. Yamamoto, M. Neeley, E. Lucero, et al., "Quantum process tomography of two-qubit controlled-Z and controlled-NOT gates using superconducting phase qubits," Phys. Rev. B 82 184515 (2010). [UC Santa Barbara]
14. H. Wang, M. Mariantoni, R.C. Bialczak, et al., "Deterministic entanglement of photons in two superconducting microwave resonators,” Phys. Rev. Lett. 106, 060401 (2011). [UC Santa Barbara]
15. R.C. Bialczak, M. Ansmann, M. Hofheinz, et al., "Fast tunable coupler for superconducting qubits,” Phys. Rev. Lett. 106, 060501 (2011). [UC Santa Barbara]
16. M. Mariantoni, H. Wang, R.C. Bialczak, et al., "Photon shell game in three-resonator circuit quantum electrodynamics," Nature Physics 7, 287-293 (2011). [UC Santa Barbara]
17. J.L. Fraikin, T. Teesalu, C.M. McKenney, E. Ruoslahti and A.N. Cleland, "A high-throughput label-free nanoparticle analyzer,” Nature Nanotechnology 6, 308-313 (2011). [UC Santa Barbara]
18. J. Wenner, M. Neeley, R.C. Bialczak, et al., "Wirebond crosstalk and cavity modes in large chip mounts for superconducting qubits,” Supercond. Science and Tech. 24, 065001 (2011). [UC Santa Barbara]
19. Y. Li, R. Wang, J. Klamkin, S. Madison, P. Juodawlkis, P. Herczfeld, J. E. Bowers, "Propagation Delay of Waveguide Photodetector," Journal of Lightwave Technology 28 (15), 2099-2104 (2010). [UC Santa Barbara]

1. D. Liang, J. E. Bowers, "Recent progress in lasers on silicon," Nature Photonics 4 (8), 511-517 (2010). Invited.
2. Y. Li, R. Wang, A. Bhardwaj, S. Ristic, J. E. Bowers, "High Linearity InP-Based Phase Modulators Using a Shallow Quantum-Well Design," IEEE Photonics Technology Letters 22 (18), 1340-1342 (2010). [UC Santa Barbara]
3. J. P. Mack, E. F. Burmeister, J. M. Garcia, H. N. Poulsen, B. Stamenic, G. Kurczveil, K. N. Nguyen, K. Hollar, J. E. Bowers, D. J. Blumenthal, "Synchronous Optical Packet Buffers,"Journal of Selected Topics in Quantum Electronics (JSTQE) 16 (5), 1413-1421(2010). [UC Santa Barbara]
4. M.-C. Tien, J. F. Bauters, M. J. Heck, D. J. Blumenthal, J. E. Bowers, "Ultra-low loss Si3N4 waveguides with low nonlinearity and high power handling capability,” Optics Express 18 (23), 23562-8 (2010). [UC Santa Barbara]
5. N. Beheshti, E. Burmeister, Y. Ganjali, J. E. Bowers, D. Blumenthal, N. McKeown, "Optical Packet Buffers for Backbone Internet Routers," IEEE Transactions on Networking, 18 (5), 1599- 1609 (2010). [UC Santa Barbara]
6. A. Ramaswamy, M. Piels, N. Nunoya, T. Yin, and J.E. Bowers, "High power Silicon-Germanium photodiodes for microwave photonic applications," Microwave Theory and Techniques 58 (11), 3336-3343 (2010). [UC Santa Barbara]
7. H.-W. Chen, A. W. Fang, J. D. Peters, Z. Wang, J. Bovington, D. Liang, J. E. Bowers, "Integrated Microwave Photonic Filter on a Hybrid Silicon Platform," IEEE Transactions on Microwave Theory and Techniques 58 (11), 3213-3219 (2010). [UC Santa Barbara]
8. S. T. Todd, X. T. Huang, J. E. Bowers, N. C. MacDonald, "Fabrication, Modeling, and characterization of high aspect ratio coplanar waveguide," IEEE Transactions on Microwave Theory and Techniques 58 (12), 3790-3800 (2010). [UC Santa Barbara]
9. D. Dai, Z. Wang, N. Julian, J. E. Bowers, "Compact broadband polarizer based on shallowly- etched silicon-on-insulator ridge optical waveguides," Optics Express 18 (26), 27404- 27415 (2010). [UC Santa Barbara]
10. J. M. O. Zide, J.-H. Bahk, R. Singh, M. Zebarjadi, G. Zeng, H. Lu, J. P. Feser, D. Xu, S. L. Singer, Z. X. Bian, A. Majumdar, J. E. Bowers, A. Shakouri, A. C. Gossard, "High efficiency semimetal/semiconductor nanocomposite thermoelectric materials," Journal of Applied Physics108 (12), (2010). [UC Santa Barbara]
11. H.-W. Chen, J. D. Peters, J. E. Bowers, "Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp," Optics Express 19 (2), 1455-1460 (2011). [UC Santa Barbara]
12. J. Ravichandran, J. T. Kardel, M. L. Scullin, J.-H. Bahk, H. Heijmerikx, J. E. Bowers, A. Majumdar," An apparatus for simultaneous measurement of electrical conductivity and thermopower of thin films in the temperature range of 300- 750K," Rev. of Sci. Instr. 82, (2011). [UC Santa Barbara]
13. A. T. Ramu, L. E. Cassels. N. H. Hackman, H. Lu, J. M. O. Zide, J. E. Bowers, "Thermoelectric transport in the coupled valence-band model," J. of Appl. Phys.109, 033704 (2011). [UC Santa Barbara]
14. J. F. Bauters, M. J. Heck, D. John, D. Dai, M.-C. Tien, J. S. Barton, A. Liense, R. G. Heideman, D. J. Blumenthal, J. E. Bowers, "Ultra-low-loss high-aspect-ratio Si3N4 waveguides," Optics Express 19 (4), 3163-3174 (2011). [UC Santa Barbara]
15. X. Liu, A.T. Ramu, J.E. Bowers, C.J. Palmstrom, P.G. Burke, H. Lu, A.C. Gossard, "Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectric applications," Journal of Crystal Growth 316 (1), 56-59 (2011). [UC Santa Barbara]

1. U. Krishnamachari, S. Ristic, C.- H. Chen, L. Johansson, A. Ramaswamy, J. Klamkin, E. Norberg, J. E. Bowers, L. A. Coldren, "InP/InGaAsP-Based Integrated 3-dB Trench Couplers for Ultra- Compact Coherent Receivers," Photonics Technology Letters 23 (5), 311-313 (2011). [UC Santa Barbara]
2. Y. Tang, H.- W. Chen, S. Jain, J.D. Peters, U. Westergren, J.E. Bowers, "50 Gb/s hybrid silicon traveling-wave electroabsorption modulator," Optics Express 19 (7), 5811-5816 (2011). [UC Santa Barbara]
3. D. Liang, M. Fiorentino, S. Srinivasan, J.E. Bowers, R.G. Beausoleil, "Low Threshold Electrically-Pumped Hybrid Silicon Microring Lasers," Journal of Selected Topics in Quantum Electronics PP(99), 1- 6 (2011). [UC Santa Barbara]
4. P. Burke, H. Lu, N.G. Rudawski, S. Stemmer, A.C. Gossard, J.-H. Bahk, J.E. Bowers, "Electrical properties of Er-doped In0.53Ga0.47As," Journal of Vacuum Science and Technology 29 (3), 03C117-1- 03C117-5 (2011). [UC Santa Barbara]
5. D. J. Blumenthal, J. Barton, N. Beheshti, J. E. Bowers, et al., "Integrated Photonics for Low- Power Packet Networking," Journal of Selected Topics in Quantum Electronics 17 (2), (2011). Invited. [UC Santa Barbara]
6. F.- M. Kuo, C.-B. Huang, J.-W. Shi, N.-W. Chen, H.-P. Chuang, J.E. Bowers, C.-L.Pan, "Remotely Up-Converted 20 Gbit/s Error- Free Wireless On-Off-Keying Data Transmission at W- Band Using an Ultra- Wideband Photonic Transmitter-Mixer," IEEE Photonics Journal 3 (2), 209-219 (2011). [UC Santa Barbara]
7. H. Lu, P. Burke, A.C. Gossard, G. Zeng, A.T. Ramu, J. Bahk, J.E. Bowers, "Semimetal/semiconductor nanocomposites for thermoelectrics," Advanced Materials 23, 1-7 (2011). [UC Santa Barbara]
8. S. Srinivasan, A.W. Fang, D. Liang, J. Peters, B. Kaye, J.E. Bowers, "Design of Phase-Shifted Hybrid Silicon Distributed Feedback Lasers,” Optics Express 19, 9255-9261 (2011). [UC Santa Barbara]
9. S. T. Todd, N. C. MacDonald, J. E. Bowers, "The mesa merging oxidation method for creating low-loss dielectrics and transmission lines on low resistivity silicon," J. Micromech. Microeng.,21, 1-10 (2011). [UC Santa Barbara]
10. D. Liang, M. Fiorentino, S. T. Todd, G. Kurczveil, R. G. Beausoleil, J. E. Bowers, "Fabrication of Silicon-on-Diamond Substrate and Low-loss Optical Waveguides," IEEE Photonics Technology Letters 23 (10), (2011). [UC Santa Barbara]
11. D. Dai, J.E. Bowers, “Novel concept for ultracompact polarization splitter-rotator based on silicon nanowires,” Optics Express 19 (11), 10940-10949 (2011).
12. M.C. Tien, T. Mizumoto, P. Pintus, H. Kromer, J.E. Bowers, “Silicon ring isolators with bonded nonreciprocal magneto-optic garnets,” Optics Express 19 (12), 11740- 11745 (2011). [UC Santa Barbara]
13. D.Dai, Z.Wang, J.E. Bowers, "Considerations for the design of asymmetrical Mach-Zehnder Interferometers used as polarization beam splitters on a sub- micrometer silicon-on-insulator platform," Journal of Lightwave Technology 29 (12), (2011). [UC Santa Barbara]
14. Y. Xiao, K. Dane, T. Uzawa, A. Csordas, J. Qian, H.T. Soh, P. Daugherty, E. Lagally, A. Heeger, and K. Plaxco, "Detection of Telomerase Activity in High Concentration of Cell Lysates Using Primer-Modified Gold Nanoparticles,” Journal of the American Chemical Society (132), 15299- 15307 (2010).
15. J.D. Adams and H.T. Soh, "Tunable Acoustophoretic Band-Pass Particle Sorter," Applied Physics Letters (97) 064103 (2011). [UC Santa Barbara]

1. Y. K. Jung, T. W. Kim, H. G. Park, and H. T. Soh, "Specific Colorimetric Detection of Proteins using Bidentate Aptamer Conjugated Polydiacetylene (PDA) Liposomes,” Advanced Functional Materials 20, 3092–3097 (2010). [UC Santa Barbara]
2. K. Hsieh, Y. Xiao, and H.T. Soh, “Electrochemical DNA Detection via Exonuclease and Target- catalyzed Transformation of Surface-Bound Probe,” Langmuir 26 (12) 10392-10396 (2010). [UC Santa Barbara]
3. B. S. Ferguson, S. F. Buchsbaum, T-T Wu, K. Hsieh, Y. Xiao, R. Sun and H. T. Soh, "Genetic Analysis of H1N1 Influenza Virus from Throat Swab Samples in a Microfluidic System for Point- of-Care Diagnostics,” Journal of the American Chemical Society 133, 9129-9135 (2011). [UC Santa Barbara]
4. D. R. Hayhurst, K. T. Kedward, H. T. Soh, and K. L. Turner,"Innovation-Led Multi-Disciplinary Undergraduate Design Teaching,” Journal of Engineering Design, (2011). [UC Santa Barbara]
5. K.W. Plaxco and H.T. Soh, "Switch-based Biosensors: A New Approach Towards Real-time, In Vivo Molecular Detection,"Trends in Biotechnology 29(1), 1-5 (2011). [UC Santa Barbara]
6. C. J. Trowbridge, B. M. Norman, J. Stephens, A. C. Gossard, D. D. Awschalom, and V. Sih,"Electron spin polarization-based integrated photonic devices,” Optics Express 19, 14845- 14851 (2011). [UC Santa Barbara]
7. G. D. Fuchs, G. Burkard, P. V. Klimov, and D. D. Awschalom, “A quantum memory intrinsic to single nitrogen-vacancy centres in diamond,” Nature Physics, (June 2011). [UC Santa Barbara]
8. B. B. Buckley, G. D. Fuchs, L. C. Bassett, and D. D. Awschalom,"Spin-Light Coherence for Single-Spin Measurement and Control in Diamond,” Science 330, 1212 (2010). [UC Santa Barbara]
9. M. E. Nowakowski, G. D. Fuchs, S. Mack, N. Samarth, and D. D. Awschalom, "Spin Control of Drifting Electrons Using Local Nuclear Polarization in Ferromagnet-Semiconductor Heterostructures,” Phys. Rev. Lett. 105, 137206 (2010). [UC Santa Barbara]
10. B. M. Norman, C. J. Trowbridge, J. Stephens, A. C. Gossard, D. D. Awschalom, and V. Sih, “Mapping spin-orbit splitting in strained (In,Ga)As epilayers,” Phys. Rev. B 82, 081304 (2010). [UC Santa Barbara]
11. D. M. Toyli, C. D. Weis, G. D. Fuchs, T. Schenkel, and D. D. Awschalom, “Chip-Scale Nanofabrication of Single Spins and Spin Arrays in Diamond,” Nano Lett. 10, 3168 (2010). [UC Santa Barbara]
12. G. D. Fuchs, V. V. Dobrovitski, D. M. Toyli, F. J. Heremans, C. D. Weis, T. Schenkel, and D. D. Awschalom, “Excited-state spin coherence of a single nitrogen-vacancy centre in diamond,”Nature Physics 6, 668 (2010). [UC Santa Barbara]
13. S. N. Ghosh, B. B. Buckley, C. G. L. Ferri, X. Li, F. M. Mendoza, Y. K. Verma, N. Samarth, D. D. Awschalom, and S. Ghosh, "Polarization based control of optical hysteresis in coupled GaAs microdisks,” Appl. Phys. Lett. 97, 011106 (2010). [UC Santa Barbara]
14. B. J. Maertz, A. P. Wijnheijmer, G. D. Fuchs, M. E. Nowakowski, and D. D. Awschalom,"Vector magnetic field microscopy using nitrogen vacancy centers in diamond,” Appl. Phys. Lett. 96, 092504 (2010). [UC Santa Barbara]
15. A. Lenzi, F. Viola, F. Bonotto, J. Frey, M. Napoli, and S. Pennathur, ‘Method to determine the effective zeta potential in a microchannels with an embedded electrode,” accepted,Electrophoresis. [UC Santa Barbara]
16. T.M. Wynne, A.H. Dixon, and S. Pennathur, "Nanofluidic fTIRF Nanoparticle Characterization Tool," Experiments in Fluids, submitted. [UC Santa Barbara]

1. T. Driehorst, P. O’Neill, P.M. Goodwin, S. Pennathur, and D. Fygenson, “Distinct Conformations of DNA-Stabilized Fluorescent Silver Nanoclusters Revealed by Electrophoretic Mobility and Diffusivity Measurements,” Langmuir 27(4), 8923-8933 (2011). [UC Santa Barbara]
2. K.L. Jensen, J.T. Kristensen, A.M. Crumrine, M.B. Andersen, H. Bruus, H., and S. Pennathur, "Hydronium-dominated ion transport in carbon-dioxide-saturated electrolytes at low salt concentrations in nanochannels," Phys. Review E., 83, 056307 (2011). [UC Santa Barbara]
3. M.B. Andersen, H. Bruus, J. Bardhan, and S. Pennathur, "Dissolution in Fused Silica Nanochannels,” Journal of Colloid and Interface Science, (2011). [UC Santa Barbara]
4. M.B. Andersen, J. Frey, H. Bruus, and S. Pennathur, "Wall deprotonation during capillary filling of silica nanochannels coated with hydrophilic 3-cyanoproplydimethlychlorosilane,” Journal of Colloid and Interface Science 353 (1), 301-310 (2011). [UC Santa Barbara]
5. In Valtiner et al., “Effect of surface roughness and electrostatic surface potential on forces between dissimilar suraces in aqueous solution,” Advanced Material 23 (2011) 2294-2299 (2011).
6. In Zeng et al., “Surface-induced patterns from evaporating droplets of aqueous carbon nanotube dispersions,” Langmuir 27, 7163-7167 (2011). [UC Santa Barbara
7. B. Jalan B. Jalan, S. J. Allen, G. E. Beltz, P. Moetakef, and S. Stemmer, "Enhancing the electron mobility of SrTiO(3) with strain," Applied Physics Letters 98 (13), 132102 (2011). [UC Santa Barbara]
8. B. Jalan, S. Stemmer, S. Mack, and S. J. Allen, "Two-dimensional electron gas in delta-doped SrTiO(3)," Physical Review B 82 (8), 081103 (2010). [UC Santa Barbara]
9. G. C. Dyer, N. Q. Vinh, S. J. Allen, G. R. Aizin, J. Mikalopas, J. L. Reno, and E. A. Shaner, "A terahertz plasmon cavity detector," Applied Physics Letters 97 (19), 193507 (2010). [UC Santa Barbara]
10. D. G. Ouellette, S. Lee, J. Son, S. Stemmer, L. Balents, A. J. Millis, and S. J. Allen, "Optical conductivity of LaNiO(3): Coherent transport and correlation driven mass enhancement," Physical Review B 82 (16), 165112 (2010). [UC Santa Barbara]
11. G. C. Dyer, G. R. Aizin, J. L. Reno, E. A. Shaner, and S. J. Allen, "Novel Tunable Millimeter- Wave Grating-Gated Plasmonic Detectors," IEEE Journal of Selected Topics in Quantum Electronics 17 (1), 85-91 (2011). [UC Santa Barbara]
12. Ricardo A. Pinto, Alexander N. Korotkov, Michael R. Geller, Vitaly S. Shumeiko, John M. Martinis, “Analysis of a tunable coupler for superconducting phase qubits,” PRB 82, 104522 (2010).
13. Yoni Shalibo, Ya'ara Rofe, Ido Barth, Lazar Friedland, Radoslaw Bialczack, John M. Martinis, Nadav Katz, “Quantum and Classical Chirps in an Anharmonic Oscillator,” Submitted to PRL(2011).
14. J. Wenner, R. Barends, R. C. Bialczak, Yu Chen, J. Kelly, Erik Lucero, Matteo Mariantoni, A. Megrant, P. J. J. O’Malley, D. Sank, A. Vainsencher, H. Wang, T. C. White, Y. Yin, J. Zhao, A. N. Cleland, John M. Martinis, “Surface loss simulations of superconducting coplanar waveguide resonators,” Submitted to APL (2011).
15. R. Barends, J. Wenner, M. Lenander, Y. Chen, R. C. Bialczak, J. Kelly, E. Lucero, P. O'Malley, M. Mariantoni, D. Sank, H. Wang, T. C. White, Y. Yin, J. Zhao, A. N. Cleland, John M. Martinis, J. J. A. Baselmans, “Loss and decoherence due to stray infrared light in superconducting quantum circuits,” Submitted to APL (2011).
16. . Lenander, H. Wang, Radoslaw C. Bialczak, Erik Lucero, Matteo Mariantoni, M. Neeley, A. D. O'Connell, D. Sank, M. Weides, J. Wenner, T. Yamamoto, Y. Yin, J. Zhao, A. N. Cleland, John M. Martinis, “Measurement of energy decay in superconducting qubits from nonequilibrium quasiparticles,” M PRB 84, 024501 (2011).

1. Daniel L. Creedon, Yarema Reshitnyk, Warrick Farr, John M. Martinis, Timothy L. Duty, Michael E. Tobar, “High Q-factor sapphire whispering gallery mode microwave resonator at single photon energies and millikelvin temperatures,” APL 98, 222903 (2011).
2. J. Wenner, M. Neeley, Radoslaw C. Bialczak, M. Lenander, Erik Lucero, A. D. O'Connell, D. Sank, H. Wang, M. Weides, A. N. Cleland, John Martinis, “Wirebond crosstalk and cavity modes in large chip mounts for superconducting qubits,” Superconductor Science and Technology 24, 065001 (2011).
3. M. Weides, R. C. Bialczak, M. Lenander, E. Lucero, Matteo Mariantoni, M. Neeley, A. D. O'Connell, D. Sank, H. Wang, J. Wenner, T. Yamamoto, Y. Yin, A. N. Cleland, J. Martinis, “Phase qubits fabricated with trilayer junctions,” Superconductor Science and Technology 24, 055005 (2011).
4. K. H. Kim, S. Q. Choi, J. A. Zasadzinski, T. M. Squires, “Interfacial rheology of DPPC monolayers at the air-water interface,” Soft Matter, in press (2011).
5. S. Q. Choi, S. G. Jang, A. J. Pascall, M. D. Dimitriou, T. Kang, C. J. Hawker, and T. M. Squires, “Synthesis of multifunctional micron-sized particles with magnetic, amphiphilic, and anisotropic properties”, Adv. Mat. 23, 2348-2352 (2011).
6. S. Y. Choi, A. J. Pascall, and T. M. Squires, “Active microrheology and simultaneous visualization of sheared phospholipid monolayers,” Nature Communications 2, 312 (2011).
7. S. Q. Choi and T. M. Squires, “Dynamics within surfactant monolayers,” Phys. Fluids 22, 091113 (2010).
8. Z. Zell, S. Q. Choi, L. G. Leal, T. M. Squires, “Microfabricated deflection tensiometers for measuring surface pressure of insoluble surfactants,” App. Phys. Lett. 97, 133505 (2010).
9. Wei Liu, Hong Li, Chuan Xu, Yasin Khatami and Kaustav Banerjee, “Synthesis of High-Quality Monolayer and Bilayer Graphene on Copper using Chemical Vapor Deposition, “CARBON,49(13), 4122-4130 (2011).
10. J. Lang, C. Neufeld, C. Hurni, S. Cruz, E. Matioli, U. Mishra, and J. Speck, “High external quantum efficiency and fill-factor ingan/gan heterojunction solar cells grown by NH3-Based molecular beam epitaxy,” Appl. Phys. Lett. 98, 131115 (2011).
11. E. Matioli and C. Weisbuch, “Direct measurement of internal quantum efficiency in light emitting diodes under electrical injection,” Appl. Phys. 109, 073114 (2011).
12. E. Rangel, E. Matioli, Y. Choi, C. Weisbuch, J. Speck, and E. Hu, “Directionality control through selective excitation of low-order guided modes in thin-films ingan photonic crystal light-emitting diodes,” Appl. Phys. Lett. 98, 081104 (2011).
13. E. Matioli, C. Neufeld, M. Iza, S. Cruz, A. Al-Heji, X. Chen, R. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency ingan/gan solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
14. E. Matioli, and C. Weisbuch, “Impact of photonic crystals on LED light extractions efficiency: Approaches and limits to vertical structure designs,” J. Phys. D: Appl. Phys. 43, 354005 (2010).
15. E. Rangel, E. Matioli, H. Chen, Y. Choi, C. Weisbuch, J. Speck, and E. Hu, “Interplay of cavity thickness and metal absorption in thin-film ingan photonic crystal light-emitting diodes,” Appl. Phys. Lett. 97, 061118 (2010).
16. C. M. Morris, D. Stehr, H. Kim, T. Truong, C. Pryor, P. M. Petroff, and M. S. Sherwin, “Terahertz Ionization of Highly Charged Quantum Posts in a Perforated Electron Gas,” Nano Letters, (2011).

1. B. Zaks, D. Stehr, T. Truong, P. M. Petroff, S. Hughes, M. S. Sherwin, “THz driven quantum wells: Coulomb interactions and Stark shifts in the ultrastrong coupling regime,” ARXIV, (2011).
2. Dominik Stehr, Christopher M. Morris, Christian Schmidt, and Mark S. Sherwin, “High- performance fiber-laser-based terahertz spectrometer,” Optics Letters 35(22), 3799-3801 (2010).
3. J.Gudat, C. Bonato, E. v. Nieuwenburg, S. M. Thon, H. Kim, P. M. Petroff, M. P. v. Exter, and D. Bouwmeester, “Permanent tuning of quantum dot transitions to degenerate microcavity resonances,” Appl. Phys. Lett. 98, 121111 (2011).
4. D. Kleckner, W. T. W. Irvine, S. S. R. Oemrawsingh, and D. Bouwmeester, “Diffraction-limited high-finesse optical cavitys,” Phys. Rev. A. 81, 043814 (2010).
5. F. Haupt, S. S. R. Oemrawsingh, S. M. Thon, H. Kim, D. Kleckner, D. Ding, D. J. Suntrup III, P. M. Petroff and D. Bouwmeester, “Fiber-connectorize micropillar cavities,” Appl. Phys. Lett. 97,131113 (2010).
6. S. M. Thon, W. T. M. Irvine, D. Kleckner, and D. Bouwmeester, “Polychromatic Photonic Quasicrystal Cavities,” Phys. Rev. Lett. 104, 243901 (2010).
7. C. Bonato, F. Haupt, S. S. R. Oemrawsingh, J. Gudat, D. Ding, M. P. v. Exter, and D. Bouwmeester, “CNOT and Bell-stat analysis in the weak-coupling cavity QED regime, “ Phys. Rev. Lett. 104,160503 (2010).
8. Elison Matioli, Elizabeth Rangel, Michael Iza, Blaise Fleury, Natha Pfaff, James Speck, Evelyn Hu, Claude Weisbuch, “High extraction efficiency light-emitting diodes based on embedded air- gap photonic-crystals,” Appl. Phys. Lett. 96, 031108 (2010).
9. Elison Matioli, Blaise Fleury, Elizabeth Rangel, Thiago Melo, Evelyn Hu, James Speck, Claude Weisbuch, “High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes: Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals,” Appl. Phys. Express 3, 032103 (2010).
10. Elison Matioli, Blaise Fleury, Elizabeth Rangel, Evelyn Hu, James Speck, Claude Weisbuch, “Measurement of extraction and absorption parameters in GaN-based photonic-crystal light- emitting diodes,” J. Appl. Phys. 107, 053114 (2010)
11. D. Simeonov, M.Y. Tsai, H.T. Chen, C. Weisbuch, J. Speck, “Bonding of nitride based LEDs on tin oxide templates for advanced optoelectronic devices,” Electronics Lett. 47, (2011).
12. Elison Matioli, Stuart Brinkley, Kathryn M. Kelchner, Shuji Nakamura, Steven DenBaars, James Speck, and Claude Weisbuch, “Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals,” Appl. Phys. Lett 98(25), 251112 (2011)
13. S.Dasgupta, Nidhi, A. Raman, J. Speck, U. Mishra, "Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base," Electron Device Letters, IEEE, 2011 (Available online).
14. Sansaptak Dasgupta, Soojeong Choi, Feng Wu, James S. Speck and Umesh K. Mishra, “Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy,” Appl. Phys. Express 4, 045502 (2011).
15. Nidhi, S. Dasgupta, D. F. Brown, U. Singisetti, S. Keller, J. S. Speck and U. K. Mishra, “Self- aligned technology for N-polar GaN/Al(Ga)N MIS-HEMTs,” IEEE Electron Device Letters 32(1), 33 (2011).
16. Nidhi, S. Dasgupta, Y. Pei, B. L. Swenson, S. Keller, J. S. Speck and U. K. Mishra, “N-polar GaN/AlN MIS-HEMT for Ka band power applications,” IEEE Electron Device Letters 31(12), 1437 (2010).
17. Nidhi, D. F. Brown, S. Keller and U. K. Mishra, “Very low ohmic contact resistance through an AlGaN etch-stop in Nitrogen-polar GaN-based High Electron Mobility Transistors,” Japanese Journal of Applied Physics 49(2), 2010.

1. U.Singisetti, M. H. Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Enhancement-mode N- polar GaN MISFETs with current gain cutoff frequency (ft) of 120 GHz,” Applied Physics Express 4(2), 024103 (2011).
2. U. Singisetti, M H Wong, S. Dasgupta, Nidhi, B. L. Swenson, B. J. Thibeault, J. S. Speck and U. K. Mishra, "Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth,” IEEE Electron Device Letters 32(2), 33-35 (2011).
3. T. van der Sar, J. Hagemeier, W. Pfaff, E. C. Heeres, S. M. Thon, H. Kim, P. M. Petroff, T. H. Oosterkamp, D. Bouwmeester, and R. Hanson, “Deterministic nanoassembly of a coupled quantum emitter–photonic crystal cavity system,” Applied Physics Letters 98, 193103 (2011).
4. S. Kolluri, S. Keller, S. DenBaars, and U. Mishra, "N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate," IEEE Electron Device Letters, IEEE 32(5), 635-637 (2011).
5. S. Kolluri, D.F. Brown, Man Hoi Wong, S. Dasgupta, S. Keller, S. DenBaars, U. Mishra, "RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation," IEEE Electron Device Letters, IEEE 32(2), 134-136 (2011).
6. Seshadri Kolluri, Stacia Keller, David Brown, Geetak Gupta, Siddharth Rajan, Steven P. DenBaars, and Umesh K. Mishra, "Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor- high electron mobility transistors grown on vicinal substrates," J. Appl. Phys. 108, 074502 (2010).
7. G. A. Umana-Membreno, T. B. Fehlberg, S. Kolluri, D. F. Brown, S. Keller, U. K. Mishra, B. D. Nener, L. Faraone,and G. Parish, "Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures," Applied Physics Letters 98, 222103 (2011).
8. Man Hoi Wong, David F. Brown, Michael L. Schuette, Hyeongnam Kim, Venkatesh Balasubramanian, Wu Lu, James S. Speck, and Umesh K. Mishra, “X-Band Power Performance of MBE-grown N-face GaN MIS-HEMTs.” (featured: in brief), Electron. Lett. 47, 214 (2011).
9. Man Hoi Wong, Feng Wu, James S. Speck, and Umesh K. Mishra, “Polarity Inversion of N-face GaN Using an Aluminum Oxide (AlOx) Interlayer,” J. Appl. Phys. 108, 123710 (2010).
10. C.J. Neufeld, S.C. Cruz, R.M. Farrell, M. Iza, J.R. Lang, S. Keller, S. Nakamura, S.P. DenBaars, J.S. Speck, and U.K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells,” Applied Physics Letters 98(24), 243507 (2011).
11. Aaron Arehart, Tony Homan, Man Hoi Wong, Christiane Poblenz, James S. Speck, and Steven Ringel, “Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy,” Appl. Phys. Lett. 96, 242112
12. Anna Podolska, Martin Kocan, Alex M. Garces Cabezas, Timothy D. Wilson, Gilberto A. Umana- Membreno, Brett D. Nener, Giacinta Parish, Stacia Keller, and Umesh K. Mishra, “Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices” Appl. Phys. Lett. 97, 012108 (2010)
13. Digbijoy N. Nath, Stacia Keller, Eric Hsieh, Steven P. DenBaars, Umesh K. Mishra, and Siddharth Rajan, “Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure,” Appl. Phys. Lett. 97, 162106 (2010).
14. Masataka Higashiwaki, Srabanti Chowdhury, Brian L. Swenson, and Umesh K. Mishra, “Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures,” Appl. Phys. Lett. 97, 222104 (2010).
15. Christophe A. Hurni, Oliver Bierwagen, Jordan R. Lang, Brian M. McSkimming, Chad S. Gallinat, Erin C. Young, David A. Browne, Umesh K. Mishra, and James S. Speck, “P-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents,” Appl. Phys. Lett. 97, 222113 (2010).

1. Masataka Higashiwaki, Srabanti Chowdhury, Mao-Sheng Miao, Brian L. Swenson, Chris G. Van de Walle, and Umesh K. Mishra, “Distribution of donor states on etched surface of AlGaN/GaN heterostructures,” Appl. Phys. 108, 063719 (2010)
2. M. Kocan, F. Recht, G. Umana-Membreno, M. Kilburn, B.D. Nener, U. Mishra, G. Parish, “Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors,” Solid-State Electronics 56, 56–59 (2011).
3. Baharin, R. Pinto, U. Mishra, B.D. Nener, G. Parish, “Low resistivity contacts to plasma etched Mg-doped GaN using very low power inductively coupled plasma etching,” Thin Solid Films 519, 3686-3689 (2011).
4. Baharin, R. Pinto, B. Nener, G. Parish, U. Mishra, “Low contact resistance to plasma etched p- type GaN,” Electronic Letters 47(5), 342-343 (2011).
5. A. Baharin, R. Pinto, U. Mishra, B. Nener, G. Parish, “Improvement of ohmic contacts to Mg- doped GaN using very low power inductively coupled plasma etching,” J. of Applied Physics (2011).
6. Y. Zhao, S. Tanaka, C.C. Pan, K. Fujito, D. Feezell, J. Speck, S.P. DenBaars and S. Nakamura, “High-Power Blue-Violet Semipolar InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2,” Applied Physics Express 4, (2011).
7. Hsu, K. Kelchner, A. Tyagi, R. Farrell, D. Haeger, K. Fujito, H. Ohta, S. DenBaars, J. Speck, S. Nakamura, “InGaN/GaN Blue Laser Diode Grown on Semipolar (30(3)over-bar1) Free-Standing GaN Substrates,P,” Applied Physics Express 3(5), (2011).
8. A. Tyagi, R. Farrell, K. Kelchner, C. Huang, P. Hsu, D. Haeger, M. Hardy, C. Holder, K. Fujito, D. Cohen, H. Ohta, J. Speck, S. DenBaars, S. Nakamura, “AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm,” Applied Physics Letters Applied Physics Letters 4(5), (2011).
9. S. Tanaka, Y. Zhao, I. Koslow, C.-C. Pan, H.-T. Chen, J. Sonoda, S.P. DenBaars, and S. Nakamura, “Droop improvement in high current range on PSS-LEDs,” 47(5), 335 (2011).
10. B. Hsiung, Y. Lin, H. Ohta, S.P. DenBaars, and S. Nakamura, “Ohmic Cathode Electrode on the Backside of m-Plane and (20(2)over-bar1) Bulk GaN Substrates for Optical Device Applications,”Japanese Journal of Applied Physics 50(2), (2011).
11. R.M. Farrell, D.A. Haeger, X. Chen, M. Iza, A. Hirai, K.M. Kelchner, K. Fujito, A. Chakraborty,S. Keller, S.P. DenBaars, J.S. Speck, and S. Nakamura, “Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes,” Journal of Crystal Growth 313(1), (2011).
12. Hiroaki Ohta, Steven P. DenBaars, and Shuji Nakamura, “Future of group-III nitride semiconductor green laser diodes,” Journal of Optical Society of AmericaB, Optical Physics27(11), (2011).
13. V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Applied Physics Letters 97(15), (2011).
14. V.Liuolia, S.Marcinkevičius, Y.Lin, H. Ohta, S. DenBaars, and S. Nakamura,“Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells,” Journal of Applied Physics108(2), (2011).
15. You-Da Lin, Shuichiro Yamamoto, Chia-Yen Huang, Chia-Lin Hsiung, Feng Wu, Kenji Fujito, Hiroaki Ohta, James S. Speck, Steven P. DenBaars, and Shuji Nakamura, “High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes,” Applied Physics Express 3(8), (2011).

1. Masakazu Kondo, Thomas E. Mates, Daniel A. Fischer, Fred Wudl, Edward J. Kramer, “Bonding Structure of Phenylacetylene on Hydrogen-Terminated Si(111) and Si(100): Surface Photoelectron Spectroscopy Analysis and Ab Initio Calculations,” Langmuir 26 (22), 17000-17012 (2010).
2. Vindhya Mishra, Su-mi Hur, Eric W. Cochran, Gila E. Stein, Glenn H. Fredrickson, Edward J. Kramer, “Symmetry Transition in Thin Films of Diblock Copolymer/Homopolymer Blends,” Macromolecules 43 (4), 1942-1949 (2010).
3. Yuji Zhao, Shinichi Tanaka, Qimin Yan,Chia-Yen Huang, Roy B. Chung,Chih-Chien Pan,Kenji Fujito,3 Daniel Feezell, Chris G. Van de Walle,James S. Speck,Steven P. DenBaars, and Shuji Nakamura, “High optical polarization ratio from semipolar blue-green InGaN/GaN light-emitting diodes,” Applied Physics Letters 99, 051109 (2011).
4. Stephen W. Kaun, Man Hoi Wong, Sansaptak Dasgupta, Soojeong Choi, Roy Chung, Umesh K. Mishra1, and James S. Speck, “Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors,” Applied Physics Express 4, 024101 (2011).
5. R. M. Farrell, C. J. Neufeld, S. C. Cruz, J. R. Lang, M. Iza,S. Keller,S. Nakamura,S. P. DenBaars, U. K. Mishra, and J. S. Speck, “High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm,” Applied Physics Letters 98(20), 201107 (2011).
6. Roy B. Chung, Feng Wu, Ravi Shivaraman, Stacia Keller, Steven P. DenBaars, James S. Speck, Shuji Nakamura, “Growth study and impurity characterization of AlxIn1N grown by metal organic chemical vapor deposition,” Journal of Crystal Growth 324(1), 163-167 (2011).
7. Stuart E. Brinkley, You-Da Lin, Arpan Chakraborty, Nathan Pfaff, Daniel Cohen, James S. Speck, Shuji, Nakamura, and Steven P. DenBaars, “Polarized spontaneous emission from blue-green m- plane GaN-based light emitting diodes,” Applied Physics Letters 98, 011110 (2011).
8. Oliver Bierwagen, James S. Speck, Takahiro Nagata, Toyohiro Chikyow, Yoshiyuki Yamashita, Hideki Yoshikawa,and Keisuke Kobayashi, “Depletion of the In2O3(001) and (111) surface electron accumulation by an oxygen plasma surface treatment,” Applied Physics Letters 98(1), 172101 (2011).
9. Kathryn M. Kelchner, Robert M. Farrell, You-Da Lin, Po Shan Hsu, Matthew T. Hardy, Feng Wu, Daniel A. Cohen1 Hiroaki Ohta, James S. Speck, Shuji Nakamura, and Steven P. DenBaars, “Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes,” Applied Physics Express 3, 092103 (2011).
10. Tetsuya Fujiwara, Stacia Keller, James S. Speck, Steven P. DenBaars, and Umesh K. Mishra, “Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations,” Applied Physics Express 3, 101002 (2011).
11. Oliver Bierwagen and James S. Speck, “High electron mobility In2O3(001) and (111) thin films with nondegenerate electron concentration,” Applied Physics Letters 97, 072103 (2011).
12. H. Shen, G. A.Garrett, M. Wraback, H. Zhong, A. Tyagi, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Polarization field crossover in semi-polar InGaN/GaN single quantum wells,” Phys. Status Solid C 7(10), 2378-2381 (2010).
13. Y.-J. Hung, S.-L. Lee, Y.-T. Pan, B.J. Thibeault, and L.A. Coldren, “Holographic Realization of Hexagonal Two Dimensional Photonic Crystal Structures with Elliptical Geometry,” J. Vac. Sci. and Tech B 28, (5), 1030-1038 (2010)
14. E. J. Norberg, R. S. Guzzon, J. S. Parker, L. A. Johansson and L. A. Coldren, “Programmable Photonic Microwave Filters Monolithically Integrated in InP/InGaAsP.” Journal of Lightwave Technology, IEEE 29(11), 1611-1619 (2011).

1. Y. Zheng, C.-H. Lin and L.A. Coldren, “VCSELs Take Control,” Electronics Letters 46(24), 1580 (2010).
2. Y. Zheng, C.-H. Lin and L.A. Coldren, “Large Extinction Ratio and Low Threshold Dual Intra- Cavity Contacted Polarisation Switching VCSELs,” Electronics Letters 46 (24), 1619-1620 (2010).
3. Y. Zheng, C. -H. Lin and L.A. Coldren, “Control of Polarization Phase Offset in Low Threshold Polarization Switching VCSELS,” IEEE Photonics Tech. Letters 23 (5), 305-307 (2010).
4. D.J. Blumenthal, J. Barton, N. Beheshti, J.E. Bowers, E. Burmeister, L.A. Coldren, M. Dummer, G. Epps, A. Fang, Y. Ganjali, J. Garcia, B. Koch, V. Lal, E. Lively, J. Mack, M. Masanovic, N. McKeown, K. Nguyen, S. Nicholes, H. Park, B. Stamenic, A. Tauke-Pedrotti, H. Poulsen, and M. Sysak, “Integrated Photonics for Low Power Packet Networking,” IEEE Journal of Selected Topics in Quantum Electronics 17(2), 458-471 (2011). INVITED PAPER.
5. E. J. Norberg, J. S. Parker, S. C. Nicholes, B. Kim, U. Krishnamachari, and L. A. Coldren, “Etched Beam Splitters in InP/InGaAsP,” Optics Express 19(2), 717-726 (2011).
6. J.S. Parker, E.J. Norberg, R.S. Guzzon, S.C. Nicholes, L.A. Coldren, “High Verticality InP/InGaAsP Etching in Cl2/H2/Ar Inductively Coupled Plasma For Photonic Integrated Circuits,” J. Vac. Sci. Technol. B 29 (1), 011016-011020 (2011).
7. L. A. Coldren, “Semiconductor Laser Advances: The Middle Years Applications That Stimulated Advances 20 Years Ago Are Now the Latest Rage!” IEEE Photonics Society Newsletter 25(1), 4-9 (2011). INVITED
8. L. A. Coldren, S. C. Nicholes, L. Johansson, S. Ristic, R. S. Guzzon, E. J. Norberg, U. Krishnamachari, “High Performance InP-based Photonic ICs— a Tutorial,” J. Lightwave Technology 29(4), 554-570 (2011) INVITED PAPER.
9. R. S. Guzzon, E. J. Norberg, J. S. Parker, L. A. Johansson, and L. A. Coldren, “Integrated InP- InGaAsP Tunable Coupled Ring Optical Bandpass Filters with Zero Insertion Loss,” Optics Express 19(8), 7816-7826 (2011).
10. J. S. Parker, E. J. Norberg, Y.J. Hung, B. Kim, R. S. Guzzon, L. A. Coldren, "InP/InGaAsP Flattened Ring Lasers with Low-loss Etched Beam Splitters," Photonics Technology Letters 23(9), 573-575 (2011).
11. Byungchae Kim and Nadir Dagli, “Submicron Etched Beam Splitters Based on Total Internal Reflection in GaAs/AlGaAs Waveguides,” IEEE/OSA J. of Lightwave Technology 28(13),1938- 1943 (2010).
12. J. Yu, S. Chary, S. Das, J. Tamelier, N. Pesika, K. Turner, J. Israelachvili, “Gecko-Inspired Dry Adhesive for Robotic Applications,” Adv. Func. Mat. 21 (2011).
13. Zi Yie, Mark Zielke, Christopher Burgner, Kimberly Turner, “Comparison of parametric and linear mass detection in the presnece of detection noise,” Journal of Micromechanics and Microengineering 21, 025027 (2011).
14. V. Jain, E. Lobisser, A. Baraskar, B. J. Thibeault, M. J. W. Rodwell, Z. Griffith, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J. M. Fastenau, W. K. Liu, "InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous ft/fmax ~430/800 GHz," Electron Device Letters, IEEE 32(1), 24-26 (2011).
15. T. Prosa, P. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. DenBaars, S. Nakamura, and J. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single In(x)Ga(1-x)N quantum well device on semipolar, (10(11)(--)) GaN substrate,” Applied Physics Letters I 98(23), 239001 (2011).

1. W. B. Im, N. George, J. Kurzman, S. Brinkley, A. Mikhailovsky, J. Hu, B. Chmelka, S. DenBaars, R. Seshadri, “Efficient and Color-Tunable Oxyfluoride Solid Solution Phosphors for Solid-State White Lighting,” Advanced Materials Volume 23(20), 2300-2305 (2011).
2. A. Romanov, E. Young, F. Wu, et al., “Basal plane misfit dislocations and stress relaxation in III- nitride semipolar heteroepitaxy,” Applied Physics Letters 98 (20), (2011).
3. S. Bae, D. Lee, B. Kong, H. Cho, J. Kaeding, S. Nakamura, S. DenBaars, J. Speck, “Electroluminescence enhancement of semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates,” Current Applied Physics 11(3), (2011).
4. C. Pfüller, O. Brandt, T. Flissikowski, H. Grahn, T. Ive, J. Speck, and S. DenBaars, “Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires,” Applied Physics Letters 98(11), (2011).
5. S. Kolluri, D. Brown, M. Wong, S. Dasgupta, S. Keller, S. DenBaars, U. Mishra, “RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation,” IEEE Electron Device Letters IEEE 32 (2), (2011).
6. F. Wu, A. Tyagi, E. C. Young, A. Romanov, K. Fujito, S. DenBaars, S. Nakamura, J. Speck, “Misfit dislocation formation at heterointerfaces in (Al, In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates,” Journal of Applied Physics 109(3), (2011).
7. S. Keller, Y. Dora, F. Wu, X. Chen, S. Chowdury, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition,” Applied Physics Letters 97(14), (2010).
8. J. Raring, M. Schmidt, C. Poblenz, et al., “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Applied Pysics Express 3(11), (2010).
9. Heeger, “Optoelectronic Gate Dielectrics for High Brightness and High-Efficiency Light-Emitting Transistors,” Advanced Materials 23(20), 2353 (2011).
10. Heeger, “Split-Gate Organic Field Effect Transistors: Control Over Charge Injection and Transport,” Advanced Materials 22(41), 4649-4653 (2010).
11. Jonathan D. Yuen, Rajeev Kumar, Dante Zakhidov, Jason Seifter, Bogyu Lim, Alan J. Heeger and Fred Wudl, “Ambipolarity in Benzobisthiadiazole-Based Donor–Acceptor Conjugated Polymers,” Advanced Materials, (2011).
12. Hyundai Park; M.N. Sysak, Hui-Wen Chen, A. Fang, Di Liang, Ling Liao, B. Koch, J. Bovington, Yongbo Tang, K. Wong, M. Jacob-Mitos, R. Jones, J.E. Bowers, “Device and Integration Technology for Silicon Photonic Transmitters,” IEEE Journal of Selected Topics in Quantum Electronics 17(3), 671-88 (2011).

Internal user conference presentations

1. Y. Hwang, R. Engel-Herbert, N. Rudawski, S. Stemmer, “Fermi-Level Unpinning of HfO2/In0.53Ga0.47As Gate Stack Using Hydrogen Anneals,” ECS Trans. 33, 117, 2010.
2. J. E. Bowers, H.-W. Chen, D. Liang, H.-H. Chang, R. Jones, A. W. Fang, "Hybrid Silicon- AlGaInAs Lasers and Optical Modulators," IPR, IMB1, Monterey, CA., July 25-28, 2010. Invited.
3. H.-H. Chang, Y.-H. Kuo, R. Jones, A. Barkai, J. E. Bowers, "Integrated Hybrid Silicon Triplexer," IPR, IWF5, Monterey, CA., July 25-28 (2010).
4. H.-W. Chen, J. E. Bowers, "Low-Power, Fast Hybrid Silicon Switches for High-Capacity Optical Networks,"Photonics in Switching PMC3, Monterey, CA., July 25-28, 2010.

1. D. Dai, Z. Wang, J.F.Bauters, M.-C. Tien, M.R. Heck, D.J.Blumenthal, and J.E.Bowers,"Polarization characteristics of low-loss nano- core buried optical waveguides and directional couplers,"Group IV Photonics, Beijing, China, September 1, 2010.
2. J.E. Bowers, "Challenges in Silicon as a Photonic Platform," ECOC, Turin, Italy , September 19- 23 2010.
3. J. F. Bauters, M. Heck, D. John, M.-C. Tien, A. Leinse, R. G. Heideman, D. J. Blumenthal, J. E. Bowers, "Ultra-low Loss Silica-based Waveguides with Millimeter Bend Radius," ECOC, Turin, Italy, September 19-23, 2010.
4. S. Jain, M. N. Sysak, G. Kurczveil, J. E. Bowers, “Integration of Hybrid Silicon DFB Laser and Electro-Absorption Modulator using Quantum Well Intermixing,” ECOC, Turin, Italy, September 19-23, 2010.
5. G. Kurczveil, M. J. R. Heck, J. D. Peters, J. Garcia, J. E. Bowers, "A Fully Integrated Hybrid Silicon AWG Based Multiwavelength Laser," ISLC, WA4, Kyoto, Japan, September 26-30, 2010.
6. J. E. Bowers, "Semiconductor Lasers on Silicon," ISLC, WA1, Kyoto, Japan, September 26-30, 2010. Invited.
7. S. Jain, M. N. Sysak, G. Kurczveil, J. E. Bowers, "Integrated Broadband Hybrid Silicon DFB Laser Array using Quantum Well Intermixing,” ISLC, WA3, Kyoto, Japan, September 26-30, 2010.
8. P.G. Burke, H. Lu, N.G. Rudawski, J.-H. Bahk, T. Favaloro, A. Shakouri, J.E. Bowers, A.C. Gossard, "Electrical and optical properties of nanoparticle thermoelectric power generation materials,” NAMBE, Breckenridge, CO, September 26-29, 2010.
9. H. Lu, P.G. Burke, G. Zeng, J.E. Bowers, A.C. Gossard, “MBE grown ErSb:InxGa1-xSb and its application in thermoelectrics,” NAMBE, Breckenridge, CO., September 26-29, 2010.
10. A. Ramaswamy, L.A. Johansson, U. Krishnamachari, S. Ristic, C.H. Chen, M. Piels, A. Bhardwaj, L.A. Coldren, M.J. Rodwell, J.E. Bowers, R. Yoshimitsu, D.W. Scott, R. Davis, "Demonstration of a Linear Ultra-Compact Integrated Coherent Receiver," Microwave Photonics Conference (MPW), Montreal, Canada, October 6, 2010.
11. U. Krishnamachari, S. Ristic, A. Ramaswamy, L.A. Johansson, C.H. Chen, J. Klamkin, M. Piels, A. Bhardwaj, M.J. Rodwell, J.E. Bowers, L.A. Coldren, "Ultra-Compact Integrated Coherent Receiver for High Linearity RF Photonic Links,” Microwave Photonics Conference (MPW), Montreal, Canada, October 6, 2010.
12. D. Liang, S. Srinivasan, J. Peters, A. W. Fang, J. E. Bowers, "Demonstration of Enhanced III-V- on-Silicon Hybrid Integration by Using the Strained Superlattice as Defect Blocking Layers,"ECS,paper 1740, Las Vegas, NV, October 10-15, 2010. Invited.
13. J. E. Bowers, M. Piels, A. Ramaswamy, T. Yin, "High Power Waveguide Ge/Si Photodiodes,”ECS, Las Vegas, NV, October 10-15, 2010.
14. Y. Kang, Y. Saado, M. Morse, M. Paniccia, J. Campbell, J. E. Bowers, A. Pauchard, "Ge/Si Waveguide Avalanche Photodiodes on SOI Substrates for High Speed Communications," ECS, Las Vegas, NV, October 10- 15, 2010. Invited.
15. G. Kurczveil, S. Jain, D. Liang, H.-W. Chen, M. Heck, J. E. Bowers, "Hybrid Integration of III-V and Si for Photonic Integrated Circuits," Frontiers in Optics, paper FTyP1, Rochester, NY, October 26, 2010. Invited.
16. A. L. Huard, M. Piels, A. Ramaswamy, J. E. Bowers, D. Derickson, "Improved RF Power Extraction from 1.55μm Ge/Si n-i-p Photodiodes with Load Impedance Optimization," Photonics Society, Denver, CO, November 7-11, 2010.
17. A. W. Fang, G. A. Fish, J. E. Bowers, "Hybrid Silicon Integration Technology," Photonics

Society, Paper TuH1, Denver, CO, November 7-11, 2010. Invited.

1. D. Dai, J. E. Bowers, Y. Kang, "The Characterization of Normal Incidence Ge/Si Avalanche Photodiodes (APDs) at Low Temperatures," IEEE Photonics Society, Winter Meetings, Contributed, January 10-12, 2011.
2. J. E. Bowers, E. Hall, "Silicon Photonic Switching for Data Center Applications," IEEE Photonics Society, Winter Topicals, Keystone, CO, January 10-12, 2011. Invited. [UC Santa Barbara]
3. G. Kurczveil, M.J.R. Heck, J.M Garcia, H.N. Poulsen, H. Park, D.J. Blumenthal, J.E. Bowers, "Integrated Recirculating Optical Hybrid Silicon Buffers,” SPIE Photonics West, San Francisco, CA., January 22-27, 2011.
4. M. J. Heck, J. E. Bowers, "Integrated Fourier Domain Mode-locked Lasers: Analysis of a Novel Coherent WDM Comb Laser," OFC, paper JThA31, Los Angeles, CA, March 7-10, 2011.
5. S. Srinivasan, A. W. Fang, D. Liang, J. Peters, H.-W. Chen, B. Kaye, Y. Tang, J. E. Bowers, "Design and Implementaion of Phase-Shifted Distributed Feedback Lasers on the Hybrid Silicon platform," OFC , paper JThA32, Los Angeles, CA , March 7-10, 2011.
6. D. Dai, Z. Wang, N. Julian, J. E. Bowers, "Compact Broadband Polarizer Based on Shallowly- etched Silicon-on-Insulator Ridge Optical Waveguides," OFC, paper OThM6, Los Angeles, CA, March 7-10, 2011.
7. M. Mashanovitch, J. Barton, J. S. Parker, S. Nicholes, E. Burmeister, B. Jevremovic, J. E. Bowers, L. A. Coldren, D. J. Blumenthal, "Photonic Integrated Circuits for Optical Routing and Switching Applications," OFC, paper OThY1, Los Angeles, CA, March 7-10, 2011. Invited.
8. Y. Tang, H. -W. Chen, J. Peters, U. Westergren, J. E. Bowers, "Over 40 GHz Traveling-Wave Electroabsorption Modulator Based on Hybrid Silicon Platform," OFC, paper OWQ3, Los Angeles, CA, March 7-10, 2011.
9. H.-W. Chen, J. Peters, J.E. Bowers, "25 GHz Hybrid Silicon Mach-Zehnder Modulator using High-Speed Push-Pull Slotline Design," OFC, paper OWQ5, Los Angeles, CA, March 7-10, 2011.
10. Y. Kang, Z. Huang, Y. Saado, J. Campbell, A. Pauchard, J. E. Bowers, M. Paniccia, "High Performance Ge/Si Avalanche Photodiodes Development in Intel," OFC, paper OWZ1, Los Angeles, CA, March 7-17, 2011. Invited.
11. D. John, J. Bauters, J. Nedy, W. Li, R. Moreira, J. S. Barton, J.E. Bowers, D.J. Blumenthal, "Fabrication and Demonstration of a Pure Silica-Core Waveguide Utilizing a Density- Based Index Contrast," OFC, paper OWS3, Los Angeles, CA, March 7-10, 2011.
12. M. Sysak, H. Park, A. W. Fang, O. Raday, J. E. Bowers, R. Jones, “Reduction of hybrid silicon laser thermal impedance using Poly Si thermal shunts,” OFC, paper OWZ6, Los Angeles, CA, March 7-10, 2011.
13. D. Liang, M. Fiorentino, R. G. Beausoleil, S. T. Todd, G. Kurczveil, J. E. Bowers, "Low-loss Silicon-on-Diamond Optical Waveguides," CLEO, Baltimore, MD, May 1-6, 2011.
14. J.E. Bowers, "Lasers on Silicon,” CLEO, Baltimore, MD, May1-6, 2011. [UC Santa Barbara]
15. H.-H. Chang, Y.-H. Kuo, R. Jones, A. Barkai, J.E. Bowers, “Integrated Triplexer on Silicon,” IP 2011: ICO International Conference on Information Photonics, Ottawa, Canada, May 18-20, 2011.
16. M. Cho, Y. Xiao, J. Nie, R. Stewart, A. Csordas, S. SOh, J. Thomson, H. T. Soh, "Quantitative Selection of DNA Aptamers through Microfluidic Selection and High Throughput Sequencing," Proceedings of the National Academy of Sciences, USA 107(35), 15373-15378, 2010.

1. S. S. Oh, K. Plakos, X. Lou, Y. Xiao, H. T. Soh, "In Vitro Selection of Structure-Switching, Self- Reporting Aptamers, "Proceedings of the National Academy of Sciences, USA 107(32), 14053- 14058, 2010.
2. A. Kozhanov, D. Ouellette, M. Rodwell, S. J. Allen, D. W. Lee, and S. X. Wang, "Micro- structured ferromagnetic tubes for spin wave excitation," Journal of Applied Physics 109 (7), 07D333, 2011.
3. R. Bonotto, A. Lenzi, F. Viola, M. Napoli, J. Frey, and S. Pennathur, "Experimentally-validated theory for the effective zeta potential in microchannel with gate electrodes,” in Proceedings of the Nanotech 2011 Conference and Expo, Boston, June 13-16, 2011.
4. T. Wynne, X.T. Huang, and S. Pennathur, “Novel Low Temperature Fabrication Method of Label- Free Electronic Sensing of Biomolecules in Nanofluidic Channels with Integrated Electrodes,” inProceedings of the Nanotech 2011 Conference and Expo (Nanotech 2011), Boston, June 13-16, 2011.
5. A.M. Crumrine, D. Shah, M.B. Andersen, H. Bruus, and S. Pennathur, “Nanofluidic Carbon- Dioxide Sensor Using Hydronium-Dominated Ion Transport Theory,” in Proceedings of the 24rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2011), January, Cancun, Mexico, 2011.
6. S. C. Nicholes, M. L. Masanovic, B. Jevremovic, E. Lively, L. A. Coldren and D. J. Blumenthal, “8-channel InP Monolithic Tunable Optical Router for Packet Forwarding,” OFC/NFOEC, Los Angeles, CA, Paper OThD1, March 6-10 (2011). (Invited)
7. S. C. Nicholes, M. L. Mašanović, B. Jevremović, E. Lively, L. A. Coldren and D. J. Blumenthal, “Large-Scale Photonic Integration for Advanced All-Optical Routing Functions,” Integrated Photonics Research, Silicon and Nanophotonics, Paper ITuC1, Monterey, CA, July 25-28 (2010) (Invited).
8. P. Bozorgi, C.B. Burgner, Z. Yie, C. Ding, K.L. Turner and N.C. MacDonald, “Application of YAG Pulsed Laser Micro-Welding in MEMS Packaging,” Nanotech Conference, Anaheim, CA., June 21-25, 2010.
9. P. Bozorgi, C.B. Burgner, Z. Yie, C. Ding, K.L. Turner and N.C. MacDonald, “Application Of Millisecond Pulsed Laser Welding In MEMS Packaging,” Hilton Head 2010, A Solid State Sensors, Actuators and Microsystems Workshop, Hilton Head Island, SC., June 6-10, 2010.
10. C. Ding, P. Bozorgi, C.D. Meinhart and N.C. MacDonald, “Tunable Wetting of Titanium and Gold Based Wicking Materials,” Nanotech, Anaheim, CA., June 21-25, 2010.
11. C. Ding, P. Bozorgi, C.D. Meinhart and N.C. MacDonald, “Wicking Optimization for Thermal Cooling,” Hilton Head Conference 2010, A Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head Island, SC, June 6-10, 2010.
12. A. Baraskar, M.A. Wistey, E. Lobisser, V. Jain, U. Singisetti, G. Burek, Y.J. Lee, B. Thibeault, A. Gossard, M. Rodwell, "Ex-situ Ohmic Contacts to n-InGaAs Prepared by Atomic Hydrogen Cleaning,” 37th Conference on the Physics and Chemistry of Surfaces and Interfaces, Santa Fe, New Mexico, USA, January 10-14, 2010.
13. Mark J.W. Rodwell, Vibhor Jain, Evan Lobisser, Ashish Baraskar, Mark A. Wistey, Uttam Singisetti, Greg J. Burek, Brian J. Thibeault, A. C. Gossard, Eun Ji Kim, Paul C. McIntyre, Bo Yu, Peter Asbeck,Yuan Taur, "THz Transistors: Design and Process Technologies,” 2010 Government Microcircuit Applications and Critical Technology Conference, Reno, NV, March 22-25, 2010.
14. M. J.W. Rodwell, A. D. Carter, G. J. Burek, M. A. Wistey, B. J. Thibeault, A. Baraskar, U. Singisetti, Byungha Shin, E. Kim, J. Cagnon, Y.-J. Lee, S. Stemmer, P. C. McIntyre, A. C. Gossard, C. Palmstrøm, D. Wang, B. Yue, P. Asbeck, Y. Taur, “A Self-Aligned Epitaxial

Regrowth Process for Sub-100-nm III-V FETs," 2010 MRS Spring Meeting, San Francisco, April

5-9, 2010. Invited.

1. M. J. W. Rodwell, U. Singisetti, M.Wistey, G. J. Burek, A. Carter, A. Baraskar, J. Law, B. J. Thibeault, Eun Ji Kim, B. Shin, Yong-ju Lee, S. Steiger, S. Lee, H. Ryu, Y. Tan, G. Hegde, L. Wang, E. Chagarov, A.C. Gossard, W. Frensley, A. Kummel, C. Palmstrøm, Paul C McIntyre, T. Boykin, G. Klimek, P. Asbeck, “III-V MOSFETs: Scaling Laws, Scaling Limits, Fabrication Processes,” IEEE 22nd International Conference on Indium Phosphide and Related Materials, Kagawa, Japan, May 31-June 4, 2010. Invited.
2. Ashish Baraskar, Vibhor Jain, Mark A. Wistey, Uttam Singisetti, Yong Ju Lee, Brian Thibeault, Arthur Gossard and Mark J. W. Rodwell, “High doping effects on in-situ Ohmic contacts to n- InAs,” Presented at 22nd IEEE International Conference on Indium Phosphide and Related Materials, Kagawa, Japan, May 31-June 4, 2010.
3. Ashish Baraskar, Vibhor Jain, Mark Wistey, Evan Lobisser, Brian Thibeault, Yong Ju Lee, Arthur Gossard, Mark Rodwell, "In-situ Ohmic Contacts to p-InGaAs,” Electronics Materials Conference, South Bend, Indiana, June 23-25, 2010.
4. Vibhor Jain1, Evan Lobisser, Ashish Baraskar, Brian J. Thibeault, Mark Rodwell, Z Griffith, M Urteaga, S. T. Bartsch, D. Loubychev, A. Snyder, Y. Wu, J. M. Fastenau, W.K. Liu, “High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact,” 2010 IEEE Device Research Conference, South Bend, In technology, June 21-23, 2010.
5. Ashish Baraskar, Vibhor Jain, Mark A. Wistey, Brian J. Thibeault, Arthur C. Gossard and Mark J. W. Rodwell, “In-situ and Ex-situ Ohmic Contacts To Heavily Doped p-InGaAs,” Presented at the 16th International Conference on Molecular Beam Epitaxy, Berlin, Germany, Aug 22-27, 2010.
6. A K. Baraskar, V. Jain, M. A. Wistey, E. Lobisser, B. J. Thibeault, A. C. Gossard, M. J. W. Rodwell, “In-situ Refractory Ohmic Contacts to p-InGaAs,” Presented at the 27th North American Molecular Beam Epitaxy Conference, Breckenridge, Colorado, USA, Sep 26-29, 2010,
7. Vibhor Jain, Evan Lobisser, Ashish Baraskar, Brian J. Thibeault, Mark J. W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J. M. Fastenau, W.K. Liu, "InGaAs/InP DHBTs demonstrating simultaneous ft/fmax ~ 460/850 GHz in a refractory emitter process," 23rd International Conference on Indium Phosphide and Related Materials, Berlin, Germany, May 22- 26, 2011.
8. Evan Lobisser, Ashish Baraskar, Vibhor Jain, Brian Thibeault, Arthur Gossard, Mark J W Rodwell, "Ex-situ Tungsten Refractory Ohmic Contacts to p-InGaAs," 38th International Symposium on Compound Semiconductors, Berlin, Germany, May 22 – 26, 2011.
9. Vibhor Jain, Evan Lobisser, Ashish Baraskar, Brian Thibeault, Mark J W Rodwell, Dmitri Loubychev, Andrew Snyder, Ying Wu, Joel Fastenau, Amy Liu, "InGaAs/InP DHBTs in a planarized, etch-back technology for base contacts," 38th International Symposium on Compound Semiconductors, Berlin, Germany, May 22 – 26, 2011.
10. Andrew D. Carter, J. J. M. Law, E. Lobisser, G. J. Burek, W. J. Mitchell, B. J. Thibeault, A. C. Gossard, and M. J. W. Rodwell, " 60 nm gate length Al2O3 / In0.53Ga0.47As gate-first MOSFETs using InAs raised source-drain regrowth," 69th IEEE Device Research Conference, Santa Barbara, June 20-22.
11. Vibhor Jain, Johann C. Rode, Han-Wei Chiang, Ashish Baraskar, Evan Lobisser, Brian J. Thibeault, Mark Rodwell, Miguel Urteaga, D. Loubychev, A. Snyder, Y. Wu, J. M. Fastenau, W.K. Liu, "1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance," 69th IEEE Device Research Conference, Santa Barbara, June 20- 22.

1. Andrew D. Carter, Jeremy J. M. Law, William Mitchell, Gregory J. Burek, Brian J. Thibeault, Arthur C. Gossard, Mark. J. W. Rodwell, "Gate first In0.53Ga0.47As/Al2O3 MOSFETs with in- situ channel surface cleaning," 2011 Electronic Materials Conference, Santa Barbara CA, June 22- 24.
2. H. F. Dadgour, M. M. Hussain, A. Cassell, N. Singh and K. Banerjee, “Impact of Scaling on the Performance and Reliability Degradation of Metal-Contacts in NEMS Devices,” EEE International Reliability Physics Symposium (IRPS), Monterey, CA, April 10-14, pp. 280-289, 2011.
3. Wei Liu, Hong Li, Chuan Xu and Kaustav Banerjee , “Factors Influencing the Synthesis of Monolayer and Bilayer Graphene on Copper using Chemical Vapor Deposition,” 38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38), San Diego, CA, January 16- 20, 2011.
4. U. Singisetti, M. H. Wong, J. S. Speck, U. K. Mishra, "Vertically scaled 5 nm GaN channel Enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm gm and 0.76 Ω-mm Ron,” Late News 2011 Device Research Conference, Santa Barbara, USA.2011.
5. U. Singisetti, M H Wong, J. S. Speck, and U. K. Mishra, "Interface roughness scattering in ultra- thin GaN channels in N-polar enhancement-mode GaN MISFETs,” 2011 International Symposium on Compound Semiconductors, Berlin, 2011.
6. U. Singisetti, M H Wong, S. Dasgupta, Nidhi, B. L. Swenson, B. J. Thibeault, J. S. Speck and U. K. Mishra, "100 nm gate length self-aligned E-mode N-polar GaN MISFETs with current gain cutoff frequency (ft ) of 120 GHz,” 2010 International Workshop on Nitride Semiconductors, Tampa, 2010.
7. M. H. Wong, U. Singisetti, J.Li, J. S. Speck, U. K. Mishra, “Anomalous drain conductance in N- face GaN MISHEMTs", 2011 Device Research Conference, Santa Barbara, USA, 2011.
8. Shalini Lal, E. Snow, J. Lu, S. Keller and U. K. Mishra, “InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Transistors,” Electronic Materials Conference, June 2011.
9. D. J. Denninghoff, S. Dasgupta, D. F. Brown, S. Keller, J. Speck, and U. K. Mishra, “N-polar GaN HEMTs with fmax > 300 GHz using high-aspect ratio T-gate design,” Device Research Conference 2011, Santa Barbara, CA, June 20-22, 2011. Oral presentation.
10. D. J. Denninghoff, S. Dasgupta, J. Lu, D. F. Brown, S. Keller, J. Speck, and U. K. Mishra, “N- polar GaN HEMTs grown by MBE and MOCVD with fmax of 255 and 250 GHz, respectively,”Electronic Materials Conference 2011, Santa Barbara, CA, June 22-24, 2011. Oral presentation.
11. D. J. Denninghoff, S. Dasgupta, D. F. Brown, S. Keller, J. Speck, and U. K. Mishra, “Analysis of effect of source-drain spacking on N-polar GaN MIS-HEMTs with 310-GHz fmax,” 17thInternational Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), Santa Barbara, CA August 8-12, 2011. Oral presentation.
12. M. A. Laurent, A. Raman, S. Keller, D. J. Denninghoff, and U. K. Mishra, “Low-temperature growth and characterization of p-GaN and graded p-InGaN layers for photovoltaics by MOCVD,”Electronic Materials Conference 2011, Santa Barbara, CA, June 2011. Oral presentation.
13. U Singisetti, M. H. Wong, S. Dasgupta, Nidhi, B. L. Swenson, B. J. Thibeault, J. S. Speck and U. K. Mishra, “Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth,” 2010 Device Research Conference, University of Notre Dame, South Bend, IN, USA, 2010.
14. Seshadri Kolluri, Stacia Keller, Steven P. DenBaars, and Umesh K. Mishra, "N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm Power Density at 10 GHz Using an Al2O3Based Etch

Stop Technology for the Gate Recess,” Device Research Conference (DRC 2011), Santa Barbara,

CA, June 20-22, 2011.

1. Seshadri Kolluri, David F. Brown, Andrew D. Carter, Stacia Keller, Steven P. DenBaars, and Umesh K. Mishra, "Al2O3 Based Etch-Stop Technology for the Gate Recess in N-Polar AlGaN/GaN MIS-HEMTs with SixNy Passivation,” Electronic Materials Conference (EMC 2011), Santa Barbara, CA, June 22-24.
2. Gilberto A. Umana-Membreno, Tamara B. Fehlberg, Seshadri Kolluri, David F. Brown, Giacina Parish, Brett D. Nener, Stacia Keller, Umesh K. Mishra, and Lorenzo Faraone, "Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates,” 17th Biennial International Insulating Films on Semiconductor Conference (INFOS 2011), Grenoble, France, June 21-24, 2011.
3. Gilberto A. Umana-Membreno, Tamara B. Fehlberg, Seshadri Kolluri, David F. Brown, Giacina Parish, Brett D. Nener, Stacia Keller, Umesh K. Mishra, and Lorenzo Faraone, "Anisotropic two- dimensional electron gas transport in N-polar GaN/AlGaN heterostructures grown on vicinal substrates,” Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), Canberra, ACT, Dec 12-15, 2010.
4. Seshadri Kolluri, Stacia Keller, Steven P. DenBaars, and Umesh K. Mishra, "N-Polar GaN MIS- HEMTs With 12.1 W/mm Power Density on Sapphire Substrate,” International Workshop on Nitride Semiconductors (IWN 2010), Tampa, FL, Sep 19-24, 2010.
5. Tamara B. Fehlberg, Gilberto A. Umana-Membreno, Seshadri Kolluri, David F. Brown, Stacia Keller, Brett D. Nener, Umesh K. Mishra, Giacina Parish, and Lorenzo Faraone, "Anisotropic Electron Transport in N-polar AlGaN/GaN Heterostructures Grown on Vicinal Substrates", International Workshop on Nitride Semiconductors (IWN 2010), Tampa, FL, Sep 19-24, 2010.
6. Seshadri Kolluri, David F. Brown, Stacia Keller, Umesh K. Mishra, "Influence of the AlGaN Back-barrier Composition on the DC and RF performance of N-polar AlGaN/GaN MIS-HEMTs,” IEEE Lester Eastman Conference on High Performance Devices, Troy, NY, Aug 3-5, 2010.
7. Sansaptak Dasgupta, Nidhi, David F. Brown, T. E. Mates, Stacia Keller, James S. Speck, and Umesh K. Mishra, “Ultra-Low Ohmic Contacts to N-Polar GaN HEMTs by In(Ga)-Based Source- Drain Regrowth by Plasma MBE,” CSMANTECH, 2010.
8. Sansaptak Dasgupta, Nidhi Nidhi, James Speck, Umesh Mishra, “III-Nitride Hot Electron Transistor with current gain, β, of 30 and electrical measurement of Mean free path in GaN,”ISCS, 2011.
9. Man Hoi Wong, Uttam Singisetti, Jing Lu, James S. Speck, and Umesh K. Mishra, “Anomalous Output Conductance in N-Polar GaN-Based MIS-HEMTs,” 69th IEEE Device Research Conference (DRC), Santa Barbara, CA, USA, June 20-22 2011.
10. Man Hoi Wong, David F. Brown, James S. Speck, and Umesh K. Mishra, “Gate/Drain Lag Effects and an Anomalous DC Drain Conductance in N-face GaN-based MIS-HEMTs,” 6th International Workshop on Nitride Semiconductors (IWN), Tampa, FL, USA, September 19-24, 2010.
11. T. Fujiwara, D. J. Denninghoff, S. Keller, J. Speck, S. DenBaars, and U. K. Mishra, “Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with Al2O3 deposited by atomic layer deposition,” 38th International Symposium on Compound Semiconductors, Berlin, Germany, May 2011.
12. Ramya Yeluri, Brian L Swenson, Umesh K Mishra, “Study of Interface States at the SiN/AlGaN Interface on GaN for Ga and N polar Material,” ISCS 2010, Takamatsu, Japan, 2010.
13. Ramya Yeluri, Brian L Swenson, Umesh K Mishra, “Characterization of the Dielectric/GaN Interface for Positive Band-Offset Dielectrics (Al2O3/SiO2),” IWN 2010, Tampa, USA, 2010.

1. Brian L Swenson, Ramya Yeluri, Umesh K Mishra, “Growth Optimization of Si3N4 on GaN by Metal-Organic Chemical Vapor Deposition, EMC 2010, Notre Dame, US, 2010.
2. Ramya Yeluri, Xiang Liu, Jing Lu, Guangle Zhou, Brian L Swenson, Huili Xing, Umesh K Mishra, “Interface State Density for Positive Band-Offset Dielectrics (Al2O3/SiO2) on GaN,” EMC 2011, Santa Barbara, USA, 2011.
3. N. G. Toledo, S. C. Cruz, C. J. Neufeld, J. R. Lang, M. A. Scarpulla, T. E. Buehl, A. C. Gossard, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Wafer Bonded GaAs-Sapphire for Photovoltaic Applications via Adhesive Bonding,” 53th Electronic Materials Conference, Santa Barbara, June 2011.
4. N. G. Toledo, S. C. Cruz, C. J. Neufeld, J. R. Lang, M. A. Scarpulla, T. E. Buehl, A. C. Gossard, S. P. Denbaars, J. S. Speck, and U. K. Mishra, “Integrated Non-III-Nitride/III-Nitride Tandem Solar Cell,” 69th Device Research Conference, Santa Barbara, June 2011.
5. Vindhya Mishra and Edward Kramer, “Defect generation in thin films of block copolymer cylinders: the effect of cylinder spacing and film thickness,” APS March Meeting, 2011.
6. L. A. Coldren, Y.-C. Chang, Y.Zheng, and C.-H. Lin, “Efficient Sources for Chip-to-Chip to Box- to-Box Communication Within Data Centers,” Proc. Phot. Soc. Summer Topical, paper no. TuD2.1, Playa Del Carmen, Mexico, July 19-21, 2010. INVITED PAPER.
7. E.J. Norberg, R.S. Guzzon, J.S. Parker, and L.A. Coldren, “Programmable Photonic Filters from Monolithically Cascaded Filter Stages,” Integrated Photonics Research Proc, paper no. ITuC3, Monterey, CA, July 25-28, 2010.
8. R.S. Guzzon, E.J. Norberg, J.S. Parker, and L.A. Coldren, “Highly Programmable Optical Filters Integrated in InP-InGaAsP with Tunable Inter-Ring Coupling,” Integrated Photonics Research Proc, paper no. ITuC4, Monterey, CA, July 25-28, 2010.
9. J.S. Parker, A. Bhardwaj, P.R.A. Binetti, Y. Hung, C.-H. Lin, and L.A. Coldren, "Integrated 30GHz Passive Ring Mode-Locked Laser with Gain Flattening Filter," Proc. ISLC, paper no. PD1, Kyoto, Japan, September 26-30, 2010.
10. C.-H. Lin, Y. Zheng, M. J. W. Rodwell, and L. A. Coldren, “First Demonstration of Modulation via Field-Induced Charge-Separation in VCSELs,” Proc. ISLC, paper no. PD2, Kyoto, Japan, September 26-30, 2010.
11. L.A. Coldren, “Photonic Integrated Circuits for Microwave,” Proc Int’l. Topical Mtg. MWP, paper no. WE1-1, Montreal, Canada, October 5-9, 2010. PLENARY PAPER
12. R.S. Guzzon, E.J. Norberg, J.S. Parker, L.A. Johansson, and L.A. Coldren, “Monolithically Integrated Programmable Photonic Microwave Filter with Tunable Inter-Ring Coupling,” Proc. Int’l. Topical Mtg. MWP, paper no. WE2-4, Montreal, Canada, October 5-9, 2010.

102.

1. E.J. Norberg, R.S. Guzzon, J.S. Parker, L.A. Johansson, and L.A. Coldren, “A Monolithic Programmable Optical Filter for RF-Signal Processing,” Proc. Int’l. Topical Mtg. MWP, paper no. FR1-2, Montreal, October 2010.
2. Y. Li, A. Bhardwaj, L. A. Coldren, J. E. Bowers, and P. Herczfeld, “ACP-OPLL Photonic Integrated Circuit For High Dynamic Range RF/Photonic Links,” Proc. SPIE RF and Millimeter- Wave Photonics, paper no. 7936-15, San Francisco, CA, January 23, 2011.
3. C.-H. Lin, Y. Zheng, M. Gross, M. J. W. Rodwell, and L. A. Coldren, “High-Speed Potential of Field-Induced Charge-Separation Lasers for Short-link Applications,” Proc. Optical Fiber Communication Conf., paper no. OWD5, Los Angeles, CA, March 6-11.

1. Y. Zheng, C.-H. Lin, and L. A. Coldren, “Implant Enhanced Dual Intracavity Polarization Switching Asymmetric Current Injected VCSELS,” Proc. OFC/NFOEC, paper no. JThA046, Los Angeles, CA, March 6-11, 2011.
2. J. S. Parker, E. J. Norberg, Y. Hung, R. S. Guzzon, L. A. Coldren, “Compact InGaAsP/InP Flattened Ring Lasers with Etched Beam Splitters,” Proc. OFC/NFOEC, paper no. OThP2, Los Angeles, CA, March 6-10, 2011.
3. J.S. Parker, P.R.A. Binetti, A. Bhardwaj, R. Guzzon, E. Norberg, Y. Hung, and L.A. Coldren, “Comparison of Comb-Line Generation from InGaAsP/InP Integrated Ring Mode-locked Lasers,”Proc. CLEO 2011, paper no. CTuV6, Baltimore, MD, May 1-6, 2011.
4. N. Julian, P. Mages, S. DenBaars, L.A. Coldren, P. Petroff, J. Bowers, "Coalescence Phenomena in Narrow-Angle Stripe Epitaxial Lateral Overgrown InP by MOCVD," Proc. 2011 Electronic Materials Conference, paper no. JJ2, UC-Santa Barbara, CA, June 2011.
5. P. Mages, N. Julian, C. Zhang, L.A. Coldren, S. DenBaars, and J.E. Bowers, “Growth Habit Control of Epitaxial Lateral Overgrown InP on Si Substrates by MOCVD,” Proc. 2011 Electronic Materials Conference, paper no. JJ3, UC-Santa Barbara, CA, June 2011.
6. Y. Zheng, C.-H. Lin, and L. A. Coldren, “Output Polarization Dependence of Asymmetric Current Injection VCSELs on Crystalline Direction and Ion Implantation,” Proc. 2011 Electronic Materials Conference, paper no. G6, UC-Santa Barbara, CA, June 2011.
7. Y. Li, A. Bhardwaj, R. Wang, S. Jin, L. A. Coldren, J. E. Bowers, and P. Herczfeld, "All-Optical ACP-OPLL Photonic Integrated Circuit," Proc. IEEE MTT-S Int’l Microwave Symp., paper no. WE3C-4, Baltimore, MD, June 5-10, 2011.
8. C.-H. Lin, Y. Zheng, M. Gross, M.J.W. Rodwell, and L.A. Coldren, “Lateral Carrier Injection with n-type Modulation-doped Quantum Wells in VCSELs,” Proc. Device Research Conference, paper no. VII.A-3, UC-Santa Barbara, CA, June 20-22, 2011.
9. J.S. Parker, P.R.A. Binetti, Y-Jr. Hung, E.J. Norberg, L.A. Coldren, “RIE Lag Directional Coupler based Integrated InGaAsP/InP Ring Mode-locked Laser,” Proc. Device Research Conference,paper no. VII.A-5, UC-Santa Barbara, CA, June 20-22, 2011.
10. Byungchae Kim and Nadir Dagli, “Compact Bandstop Filters with Semiconductor Optical Amplifier, Etched Beam Splitters and Total Internal Reflection Mirrors,” Integrated Photonics Research, Silicon and Nano Photonics Conference Proceedings, Paper ITuC-6, Monterey, California, July 25-28, 2010.
11. Selim Dogru, JaeHyuk Shin, Nadir Dagli, “Design and Optimization of Ultra Low Voltage, Wide Bandwidth Substrate Removed Electro-optic Modulators” Integrated Photonics Research, Silicon and Nano Photonics Conference Proceedings, Paper IWD-2, Monterey, California, July 25-28, 2010.
12. Mark Rodwell, W. Frensley, S. Steiger, E. Chagarov, S. Lee, H. Ryu, Y. Tan, G. Hegde, L Wang, J. Law, T. Boykin, G. Klimek, P. Asbeck, A. Kummel, J. N. Schulman, “III-V FET Channel Designs for High Current Densities and Thin Inversion Layers," 2010 IEEE Device Research Conference, June 21-23, 2010, South Bend, Indiana.
13. M. Rodwell, "100+ GHz transistor electronics; present and projected capabililties," 2010 IEEE Topical Meeting on Microwave Photonics (MWP), 412-413, 5-9 Oct. 2010.
14. Vibhor Jain, Evan Lobisser, Ashish Baraskar, Brian J. Thibeault, Mark J. W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J. M. Fastenau, W.K. Liu, "InGaAs/InP DHBTs demonstrating simultaneous ft/fmax ~ 460/850 GHz in a refractory emitte process," 23rd International Conference on Indium Phosphide and Related Materials, Berlin, Germany, May 22- 26, 2011

1. M.Urteaga,R.Pierson,P .Rowell,V .Jain,E. Lobisser, M.J.W. Rodwell, "130nm InP DHBTs with ft >0.52THz and fmax >1.1THz,” 69th IEEE Device Research Conference, June 20-22, Santa Barbara.
2. Mathew C. Schmidt, Christiane Poblenz, Yu-C. Chang, B. Li, M. Mondry, T. Hasenberg, J. Iveland, M. Krames, R. Craig, J. Raring, J. Speck, S. DenBaars, and S. Nakamura, “High- performance blue and green laser diodes based on nonpolar/semipolar GaN substrates, “Proceedings of SPIE, 2011.

Other (Patents, book chapters, etc)

1. A.N. Cleland, "Nanoelectromechanical resonators,” in Handbook of Nanophysics: Functional Nanomaterials, ed. K.D. Sattler. CRC Press Boca Raton, FL: Taylor & Francis, 2010. [UC Santa Barbara]
2. S.J. Allen, C. Palmstrom, A. Kozhanov, "Spin Transfer Torque Triad for Non-Volatile Logic Gates," US Patent application 13/033347 (2011). [UC Santa Barbara]
3. H. F. Dadgour and K. Banerjee, “NEMS based Ultra Energy-Efficient Digital ICs: Materials, Device Architectures, Logic Implementation, and Manufacturability,” Chapter 10 in MEMS and Nanotechnology: From Science-to-Electronic Systems Ed: A. B. Kaul, Bentham Science Publishers, ISBN 978-1-60805-034-5, 2011.
4. N. Srivastava, R. Suaya, V. Pereyra and K. Banerjee, “Accurate Calculations of the High- frequency Impedance Matrix for VLSI Interconnects and Inductors above a Multi-layer Substrate: A VARPRO success story in Exponential Data Fitting and its Applications, “ Editors: V. Pereyra and G. Scherer. Bentham Science Publishers, ISBN: 978-1-60805-048-2, 2010.
5. Srabanti Chowdhury, Ramya Yeluri, Christophe A Hurni , Umesh K Mishra, “Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer,” Patent Pending, filed June 2011.
6. S. Nakamura, “A semipolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface,” U.S. Patent 12/861,532, 2010.
7. S. Nakamura, “Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations,” U.S. Patent 12/861,652, 2010.
8. S. Nakamura, “Structure for improving the mirror facet cleaving yield of (ga,al,in,b)n laser diodes grown on nonpolar or semipolar (ga,al,in,b)n substrates,” U.S. Patent 12/833,607, 2010.
9. S. Nakamura, “Structure and method for achieving selective etching in (ga,al,in,b)n laser diodes,” U.S. Patent 12/859,661, 2010.
10. S. Nakamura, “Superluminescent diodes by crystallographic etching,” U.S. Patent 12/913,638, 2010.
11. S. Nakamura, “Light emitting diodes with zinc oxide current spreading and light extraction layers deposited from low temperature aqueous solution,” U.S. Patent 12/939,044, 2010.
12. S. Nakamura, “Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays,” U.S. Patent 12/938,872, 2010.
13. S. Nakamura, “High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution,” U.S. Patent 12/938,948, 2010.
14. S. Nakamura, “Light emitting diode packaging method with high light extraction and heat dissipation using a transparent vertical stand structure,” U.S. Patent 12/908,793, 2010.

1. S. Nakamura, “Techniques for achieving low resistance contacts to nonpolar and semipolar p-type (al,ga,in)n,” U.S. Patent 12/909,702, 2010.
2. S. Nakamura, “Light emitting device with a coupled quantum well structure,” U.S. Patent 12/916,218, 2010.
3. S. Nakamura, “Semipolar {20-21} iii-nitride laser diodes with etched mirrors,” U.S. Patent 12/908,478, 2010.
4. Nakamura, “Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/-15 degrees in the c-direction,” U.S. Patent 13/041,120, 2011.
5. S. Nakamura, “Aluminum gallium nitride barriers and separate confinement heterostructure (sch) layers for semipolar plane iii-nitride semiconductor-based light emitting diodes and laser diodes,” U.S. Patent 13/080,260, 2011.
6. S. Nakamura, “Group-iii nitride crystal ammonothermally grown using an initially off-oriented non-polar or semi-polar growth surface of a group-iii nitride seed crystal,” U.S. Patent 13/048,179, 2011.
7. S. Nakamura, “Using millisecond pulsed laser welding in mems packaging,” U.S. Patent 61/437,936, 2011.
8. S. Nakamura, “Limiting strain relaxation in iii-nitride hetero-structures by substrate and epitaxial layer patterning,” U.S. Patent 61/406,876, 2010.
9. S. Nakamura, “Vicinal semipolar iii-nitride substrates to compensate tilt of relaxed hetero- epitaxial layers,” U.S. Patent 61/406,899, 2010.
10. S. Nakamura, “iii-nitride flip-chip solar cells,” U.S. Patent 61/405,492, 2010
11. S. Nakamura, “Ohmic cathode electrode on the backside of m-plane and (20-21) bulk gan substrates,” U.S. Patent 61/369,559, 2010.
12. S. Nakamura, “Light emitting diode for droop improvement,” U.S. Patent 61/407,343, 2010.
13. S. Nakamura, “Group-iii nitride solar cells grown on high quality group-iii nitride crystals mounted on foreign material,” U.S. Patent 61/407,354, 2010.
14. S. Nakamura, “Method for reduction of efficiency droop using an (al,in,ga)n/al(x)in(1-x)n superlattice electron blocking layer in nitride based light emitting diodes,” U.S. Patent 61/407,362, 2010.
15. S. Nakamura, “Method for fabrication of (al,in,ga) nitride based vertical light emitting diodes with enhanced current spreading of n-type electrode,” U.S. Patent 61/407,782, 2010.
16. S. Nakamura, “Textured iii-v semiconductor,” U.S. Patent 61/408,297, 2010.
17. S. Nakamura, “Two-step surface roughening technique for high light extraction efficiency iii- nitride light emitting diodes,” U.S. Patent 61/407,838, 2010.
18. S. Nakamura, High power, high efficiency and low efficiency droop iii-nitride light-emitting diodes on semipolar {20-2-1} substrates,” U.S. Patent 61/407,357, 2010.
19. S. Nakamura, “High indium uptakes and high polarization ratio on gallium nitride semipolar {20- 2-1} substrates for iii-nitride optoelectronic devices,” U.S. Patent 61/480,968, 2011.
20. S. Nakamura, “Low droop light emitting diode structure on gallium nitride semipolar {20-2-1} substrates,” U.S. Patent 61/495,829, 2011.
21. S. Nakamura, “High emission power and low efficiency droop semipolar {20-2-1} blue light emitting diodes,” U.S. Patent 61/495,840, 2011.
22. S.Denbaars, “Non-Polar Gallium Nitride Thin Films Grown By Metalorganic Chemical Vapor Deposition,” U.S. Patent 13/151,491, 2011.
23. S.Denbaars, “Non-Polar (Al,B,In,Ga)N Quantum Well And Heterostructure Materials And Devices,” U.S. Patent 13/099,834, 2011.

1. S.Denbaars, “Growth Of Reduced Dislocation Density Non-Polar Gallium Nitride,” U.S. Patent 12/947,453, 2010.
2. S.Denbaars, “Growth Of Planar Reduced Dislocation Density M-Plane Gallium Nitride By Hydride Vapor Phase Epitaxy,” U.S. Patent 13/086,961, 2011.
3. S.Denbaars, “High Efficiency Light Emitting Diode (Led) With Optimized Photonic Crystal Extractor,” U.S. Patent 12/834,453, 2010.
4. S.Denbaars, “Defect Reduction Of Non-Polar And Semi-Polar Iii-Nitrides With Sidewall Lateral Epitaxial Overgrowth (Sleo) ,” U.S. Patent 13/093,452, 2011.
5. S.Denbaars, “Technique For The Growth And Fabrication Of Semipolar (Ga,Al,In,B)N Thin Films, Heterostructures, And Devices,” U.S. Patent 12/953,029, 2010.
6. S.Denbaars, “Method For Growth Of Semipolar (Al,In,Ga,B) N Optoelectronic Devices,” U.S. Patent 12/889,787, 2010.
7. S.Denbaars, “Transparent Mirrorless Light Emitting Diod E,” U.S. Patent 12/836,348, 2010.
8. S.Denbaars, “Metalorganic Chemical Vapor Deposition (Mocvd) Growth Of High Performance Non-Polar Iii-Nitride Optical Devices,” U.S. Patent 12/914,906, 2010.
9. S.Denbaars, “Optimization Of Laser Bar Orientation For Nonpolar (Ga,Al,In,B)N Diode Lasers,” U.S. Patent 12/908,463, 2010.
10. S.Denbaars, “Optical Designs For High-Efficacy White-Light Emitting Diodes,” U.S. Patent 12/974,621, 2010.
11. S.Denbaars, “Planar Nonpolar Group Iii-Nitride Films Grown On Miscut Substrate,” U.S. Patent 13/152,553, 2011.
12. S.Denbaars, “Group-Iii Nitride Monocrystal With Improved Purity And Method Of Producing The Same,” U.S. Patent,” U.S. Patent 13/128,079, 2011.
13. S.Denbaars, “Ii-V Nitride-Based Thermoelectric Device,” U.S. Patent 13/089,138, 2011.
14. S.Denbaars, “Semipolar Nitride-Based Devices On Partially Or Fully Relaxed Alloys With Misfit Dislocations At The Heterointerface,” U.S. Patent 12/861,532, 2010.
15. S.Denbaars, “Anisotropic Strain Control In Semipolar Nitride Quantum Wells By Partially Or Fully Relaxed Aluminum Indium Gallium Nitride Layers With Misfit Dislocations,” U.S. Patent 12/861,652, 2010.
16. S.Denbaars, “Structure For Improving The Mirror Facet Cleaving Yield Of (Ga,Al,In,B)N Laser Diodes Grown On Nonpolar Or Semipolar (Ga,Al,In,B)N Substrate,” U.S. Patent 12/833,607, 2010.
17. S.Denbaars, “Structure And Method For Achieving Selective Etching In (Ga,Al,In,B)N Laser Diodes,” U.S. Patent 12/859,661, 2010.
18. S.Denbaars, “Light Emitting Device With A Stair Quantum Well Structure,” U.S. Patent 12/901,838, 2010.
19. S.Denbaars, “Solid Solution Phosphors Based On Oxyfluoride And White Light Emitting Diodes Including The Phosphors For Solid White Lighting Applications,” U.S. Patent 12/903,889, 2010.
20. S.Denbaars, “Superluminescent Diodes By Crystallographic Etching,” U.S. Patent 12/913,638
21. S.Denbaars, “Light Emitting Diodes With Zinc Oxide Current Spreading And Light Extraction Layers Deposited From Low Temperature Aqueous Solution,” U.S. Patent, 12/939,044, 2010.
22. S.Denbaars, “Light Emitting Diode Structure Utilizing Zinc Oxide Nanorod Arrays On One Or More Surfaces, And A Low Cost Method Of Producing Such Zinc Oxide Nanorod Arrays,” U.S. Patent 12/938,872, 2010.
23. S.Denbaars, “High Brightness Light Emitting Diode Covered By Zinc Oxide Layers On Multiple Surfaces Grown In Low Temperature Aqueous Solution,” U.S. Patent 12/938,948, 2010.

1. S.Denbaars, “Techniques For Achieving Low Resistance Contacts To Nonpolar And Semipolar P- Type (Al,Ga,In)N,” U.S. Patent 12/909,702, 2010.
2. S.Denbaars, “Light Emitting Device With A Coupled Quantum Well Structure,” U.S. Patent 12/916,218, 2010.
3. S.Denbaars, “Semipolar {20-21} Iii-Nitride Laser Diodes With Etched Mirrors,” U.S. Patent 12/908,478, 2010.
4. S.Denbaars, “Semi-Polar Iii-Nitride Optoelectronic Devices On M-Plane Substrates With Miscuts Less Than +/-15 Degrees In The C-Direction,” U.S. Patent 13/041,120, 2011.
5. S.Denbaars, “Aluminum Gallium Nitride Barriers And Separate Confinement Heterostructure (Sch) Layers For Semipolar Plane Iii-Nitride Semiconductor-Based Light Emitting Diodes And Laser Diodes,” U.S. Patent 13/080,260, 2011.
6. S.Denbaars, “Using Millisecond Pulsed Laser Welding In Mems Packaging,” U.S. Patent 61/437,936, 2011.
7. S.Denbaars, “Limiting Strain Relaxation In Iii-Nitride Hetero-Structures By Substrate And Epitaxial Layer Patterning,” U.S. Patent 61/406,876, 2010.
8. S.Denbaars, “Vicinal Semipolar Iii-Nitride Substrates To Compensate Tilt Of Relaxed Hetero- Epitaxial Layers,” U.S. Patent 61/406,899, 2010.
9. S.Denbaars, “Iii-Nitride Flip-Chip Solar Cells,” U.S. Patent 61/405,492, 2010.
10. S.Denbaars, “Ohmic Cathode Electrode On The Backside Of M-Plane And (20-21) Bulk Gan Substrates,” U.S. Patent 61/369,559, 2010.
11. S.Denbaars, “Light Emitting Diode For Droop Improvement,” U.S. Patent 61/407,343, 2010.
12. S.Denbaars, “Magnesium Doping In Barriers In Multiple Quantum Well Structures Of Iii-Nitride- Based Light Emitting Devices,” U.S. Patent 61/405,416, 2010.
13. S.Denbaars, “Strain Compensated Short-Period Superlattices On Semipolar Gan For Defect Reduction And Stress Engineering,” U.S. Patent 61/408,280, 2010.
14. S.Denbaars, “Ammonothermal Growth Of Group-Iii Nitride Crystals On Seeds With At Least Two Surfaces Making An Acute Or Obtuse Angle With Each Other,” U.S. Patent 61/408,444, 2010.
15. S.Denbaars, “Group-Iii Nitride Solar Cells Grown On High Quality Group-Iii Nitride Crystals Mounted On Foreign Material,” U.S. Patent 61/407,354, 2010.
16. S.Denbaars, “Method For Reduction Of Efficiency Droop Using An (Al,In,Ga)N/Al(X)In(1-X)N Superlattice Electron Blocking Layer In Nitride Based Light Emitting Diodes,” U.S. Patent 61/407,362, 2010.
17. S.Denbaars, “Method For Fabrication Of (Al,In,Ga) Nitride Based Vertical Light Emitting Diodes With Enhanced Current Spreading Of N-Type Electrode,” U.S. Patent 61/407,782, 2010.
18. S.Denbaars, “Textured Iii-V Semiconductor,” U.S. Patent 61/408,297, 2010.
19. S.Denbaars, “Two-Step Surface Roughening Technique For High Light Extraction Efficiency Iii- Nitride Light Emitting Diodes,” U.S. Patent 61/407,838, 2010.
20. S.Denbaars, “High Power, High Efficiency And Low Efficiency Droop Iii-Nitride Light-Emitting Diodes On Semipolar {20-2-1} Substrates,” U.S. Patent 61/407,357, 2010.
21. S.Denbaars, “Wafer Bonded Iii-Nitride And Non-Iii-Nitride Multi-Junction Solar Cells,” U.S. Patent 61/441,156, 2011.
22. S.Denbaars, “Method For The Fabrication Of High Conductivity Poly-Crystalline Group-Iii Nitride Films,” U.S. Patent 61/450,812, 2011.
23. S.Denbaars, “Suppression Of Inclined Defect Formation And Increase In Critical Thickness By Silicon Doping On Non-C-Plane (Al,Ga,In)N,” U.S. Patent 61/486,097, 2011.

1. High Indium Uptakes And High Polarization Ratio On Gallium Nitride Semipolar {20-2-1} Substrates For Iii-Nitride Optoelectronic Devices,” U.S. Patent 61/480,968, 2011.
2. Low Droop Light Emitting Diode Structure On Gallium Nitride Semipolar {20-2-1} Substrates,” U.S. Patent 61/495,829, 2011.
3. High Emission Power And Low Efficiency Droop Semipolar {20-2-1} Blue Light Emitting Diodes,” U.S. Patent 61/495,840, 2011.