PubList2018

Internal Users - Journal Publications

Authors	Title	Publications
J. Duan, H. Huang, B. Dong, D. Jung, J.C. Norman, J.E. Bowers, F. Grillot	1.3-um Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon	Submitted to Photonics Technology Letters (2018).
J.S.  Lee, S. Choi, M. Pendharkar, D.J. Pennachio, B. Markman, M. Seas, S. Koelling, M.A. Verheijen,L. Casparis, K.D. Petersson, I. Petkovic, V. Schaller, M.J.W. Rodwell, C.M. Marcus, P.Krogstrup, L.P. Kouwenhoven, E.P.A.M. Bakkers, C.J. Palmstrøm	1Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001),InP(111)B, and InP(110) surfaces	arXiv preprint arXiv:1808.04563
S. Liu, D. Jung, J. C. Norman, MJ Kennedy, A. C. Gossard, J. E. Bowers	490 fs pulse generation from passively mode-locked single section quantum dot laser directly grown on on-axis GaP/Si	Electronics Letters, (54)7, 432-433, March 19, 2018.
C. Neill, P. Roushan, K. Kechedzhi, S. Boixo, S. V. Isakov, V. Smelyanskiy, R. Barends, B. Burkett, Y. Chen, Z. Chen, B. Chiaro, A. Dunsworth, A. Fowler, B. Foxen, R.Graff, E. Jeffrey, J. Kelly, E. Lucero, A. Megrant, J. Mutus, M. Neeley, C. Quintana, D. Sank, A. Vainsencher, J. Wenner, T. C. White, H. Neven, J. M. Martinis	A blueprint for demonstrating quantum supremacy with superconducting qubits	Science 360, Issue 6385, 195-199 (2018).   arXiv:1709.06678
M. Garcia, B. Ganapathysubramanian, S. Pennathur	A linearised model for calculating inertial forces on a particle in the presence of a permeate flow	Journal of Fluid Mechanics. 2019 Feb;861:253-74.
H. Kim, L. Theogarajan, S. Pennathur	A repeatable and scalable fabrication method for sharp, hollow silicon microneedles	Journal of Micromechanics and Microengineering, Vol. 28, No. 3, January 2018.
K.H. Chou, C. McCallum, D. Gillespie, S. Pennathur	An experimental approach to systematically probe charge inversion in nanofluidic channels	Nano letters. 2018 Jan 11;18(2):1191-5.
D. T. Spencer, T. Drake, T. C. Briles, J. Stone, L. C. Sinclair, C. Fredrick, Q. Li, D. Westly, B. Robert Ilic, A. Bluestone, N. Volet, T. Komljenovic, L. Chang, S. H. Lee, D. Y. Oh, M.-G. Suh, K. Y. Yang, M. H. P. Pfeiffer, T. J. Kippenberg, E. Norberg, L. Theogarajan, K. Vahala, N. R. Newbury, K. Srinivasan, J. E. Bowers, S.A. Diddams, S. B. Papp	An Integrated-Photonics Optical-Frequency Synthesizer	Nature Photonics, 557, 81-85, April 25, 2018.
X. Zheng, H. Li, M. Guidry, B. Romanczyk , E. Ahmadi, K. Hestroffer, S. Wienecke , S. Keller, U.K. Mishra	Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High fmax·VDS,Q,	IEEE Electron Device Letters, Vol. 39, No. 3, March 2018
H. Huang, J. Duan, D. Jung, A. Liu, Z. Zhang, J. Norman, J. E. Bowers, F. Grillot	Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon	Journal of the Optical Society of America B, (35)11, 2780-2787, October 12, 2018.
A.C. Espenlaub, A.I. Alhassan, S. Nakamura, C. Weisbuch, J.S. Speck	Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes	Appl. Phys. Lett. 112, 141106, 2018.
N.A. Butakov, M.W. Knight, T.Lewi, P.P. Iyer, D. Higgs, H.T. Chorsi, J. Trastoy, J.D.V. Grande, I. Valmianski, C. Urban, Y. Kalcheim, P.Y. Wang, P.W.C. Hon, I.K. Schuller, J.A. Schuller	Broadband Electrically Tunable Dielectric Resonators Using Metal-Insulator Transitions	ACS Photonics 5, pp.  4054-4060 Journal
P. Li, B. Bonef, M. Khoury, G. Lheureux,H. Li, J. Kang, S. Nakamura, S.P. DenBaars	Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes	Superlattices and Microstructures 113  684-689
K. Ahadi,Z. Gui, Z. Porter, J. W. Lynn, Z. Xu, S. D. Wilson, A. Janotti, S. Stemmer	Carrier Density Control of Magnetism and Berry Phases in Doped EuTiO3	APL Mater. 6, 056105 (2018).
S. Liu, T. Komljenovic, S. Srinivasan, E. Norberg, G. Fish, J. E. Bowers	Characterization of a fully integrated heterogeneous silicon/III-V colliding pulse mode-locked laser with on-chip feedback	Optics Express, (26)8, 9714-9723, April 4, 2018.
M.J. Weaver, F.Buters, F.Luna, H.Eerkens, K. Heeck, S. de Man, D.Bouwmeester	Coherent optomechanical state transfer between disparate mechanical resonators	Nature Communicationsvolume 8, Article number: 824 (2017)
S.H. Chan, D.Bisi, M. Tahhan, C. Gupta, S.P. DenBaars, S. Keller, E. Zanoni, U.K. Mishra	Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition	Applied Physics Express, Vol. 11, No. 4, 13 March 2018
D.L. Becerra, D.A. Cohen, S. Mehari, S.P. DenBaars, S. Nakamura	Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization	Journal of Crystal Growth 507  118–123
C.A. Forman, S.G. Lee, E.C. Young, J.A. Kearns, D.A. Cohen, J.T. Leonard, T. Margalith, S.P. DenBaars,S. Nakamura	Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact	Applied Physics Letters, Vol. 112, Issue 11, 2018.
S.R. Meeker, B.A. Mazin, A.B. Walter, P. Strader, N.Fruitwala, C. Bockstiegel, P. Szypryt, G. Ulbricht, G. Coiffard, B. Bumble, G. Cancelo, T. Zmuda, K. Treptow, N. Wilcer, G. Collura, R. Dodkins, I. Lipartito, N. Zobrist, M. Bottom, J. C. Shelton, D. Mawet, J.C. van Eyken, G. Vasisht, E. Serabyn	DARKNESS: A Microwave Kinetic Inductance Detector Integral Field Spectrograph for High-contrast Astronomy	Astronomical Society of the Pacific, Volume 130, Issue 988, pp. 065001 (2018).
M. Buffolo, M. Pietrobon, C. De Santi, F. Samparisi, M. L. Davenport, J. E. Bowers, G. Meneghesso, E. Zanoni, M. Meneghini	Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits	Microelectronics Reliability, 88-90, 855-858, September 30, 2018.
B. Romanczyk, S. Wienecke, M. Guidry, H. Li, E. Ahmadi, X. Zheng, S. Keller, U.K. Mishra	Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs	IEEE Transactions On Electron Devices, Vol. 65, No. 1, Jan 2018
S. Mehari, D.A. Cohen, D.L. Becerra, S. Nakamura, S.P. DenBaars	Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 20(21)over-bar GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers	Optics Express, Vol. 26, Issue 2,1564 2018.
A.I. Alhassan, N.G. Young, R.M. Farrell, C. Pynn, F. Wu, A.Y. Alyamani, S. Nakamura, S.P. Denbaars, J.S. Speck	Development of high performance green c-plane III-nitride light-emitting diodes	Optics express, vol. 26, no. 5: Optical Society of America, pp. 5591–5601, 2018.
B. Saifaddin, C. J. Zollner, A. Almogbel, H. Foronda, F. Wu, A. Albadri, A. Al Yamani, M. Iza, S. Nakamura, S. P. DenBaars, et al.	Developments in AlGaN and UV-C LEDs grown on SiC	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, vol. 10554: International Society for Optics and Photonics, pp. 105541E, 2018.
R. Salemmilani, B.D. Piorek, A.W. FountainIII, M. Moskovits, C.D. Meinhart	Dielectrophoretic Nanoparticle Aggregation for On-Demand Surface Enhanced Raman Spectroscopy Analysis	Anal. Chem.201890137930-7936 Publication Date:June 4, 2018
W. Xie, J. Huang, T. Komljenovic, L. Coldren, J. Bowers	Diffraction Limit in Centimeter Scale: Metasurface Grating Antenna for Phased Array LiDAR	arXiv, arXiv:1810.00106, September 28, 2018.
D. Inoue, D. Jung, J. Norman, Y. Wan, N. Nishiyama, S. Arai, A. C. Gossard, J. E. Bowers	Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon	Optics Express, (26)6, 7022-7033, March 7, 2018.
Y. Wan, D. Inoue, D. Jung, J.C. Norman, C. Shang, A.C. Gossard, J.E. Bowers	Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability	Photonics Research Vol. 6, Issue 8, pp. 776-781 (2018) •https://doi.org/10.1364/PRJ.6.000776
D. Jung, D.J. Ironside, S.R. Bank, A.C. Gossard, J.E. Bowers	Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy	Journal of Applied Physics 123, 205302 (2018); https://doi.org/10.1063/1.5031772
J. Kim, H. Kim, M. E. Kilic, C. Gayner, R. Koltun, H. Park, A. Soon, J. Bowers, C. Palmstrøm, W. Kim	Effect of phonon confinement on the thermal conductivity of In0.53Ga0.47As nanofilms	Journal of Applied Physics, 123, 245103, June 25, 2018.
Z. Zhang, D. Jung, J. C. Norman, P. Patel, W. W. Chow, J. E. Bowers	Effects of modulation p doping in InAs quantum dot lasers on silicon	Applied Physics Letters, 113, 061105, August 7, 2018.
P. B. Marshall, K. Ahadi, H. Kim, S. Stemmer	Electron nematic fluid in a strained Sr3Ru2O7 film	Phys. Rev. B 97, 155160 (2018).
J. A. Frey, H. J. Snijders, J. Norman, A. C. Gossard, J. E. Bowers, W. Loffler, D. Bouwmeester	Electro-optic polarization tuning of microcavities with a single quantum dot	Optics letters 43 (17), 4280-4283
J. A. Frey, H. J. Snijders, J. Norman, A. C. Gossard, J. E. Bowers, W. Lӧffler, D. Bouwmeester	Electro-optic tuning of microcavities with a single quantum dot	arXiv, arXiv:1805.03387, May 9, 2018.
A. A. Zibrov, R. Peng, C. Kometter, J.I.A. Li, C. R. Dean, T. Taniguchi, K. Watanabe, M. Serbyn, A. F. Young	Emergent Dirac gullies and gully nematic quantum Hall states in ABA trilayer graphene	Physical Review Letters  121, 167601.
C. Conner, T. de Visser, J. Loessberg, S. Sherman, A. Smith, S. Ma, M.T. Napoli, S. Pennathur, D. Weld	Energy Harvesting with a Liquid-Metal Microfluidic Influence Machine	Phys. Rev. Applied 9, 044008 (2018)
H. Li, S. Wienecke, B. Romanczyk, E. Ahmadi, M. Guidry, X. Zheng, S. Keller, U.K. Mishra	Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels	Applied Physics Letters, Vol. 112, No. 7, 13 Feb 2018
A. A. Zibrov,E.M.Spanton, H.Zhou, C. Kometter, T. Taniguchi, K. Watanabe, A.F. Young	Even denominator fractional quantum Hall states at an isospin transition in monolayer graphene	Nature Physics 14, 930-935 (2018).
H. Snijders, J. A. Frey, J. Norman, V. P. Post, A. C. Gossard, J. E. Bowers, M. P. van Exter, W. Löffler, D. Bouwmeester	Fiber-coupled Cavity-QED Source of Identical Single Photons	Physical Review Applied,  9, 031002, March 28, 2018.
P. V. Klimov, J. Kelly, J. Chen, M. Neeley, A. Megrant, B. Burkett, R. Barends, K. Arya, B. Chiaro, Y. Chen, A. Dunsworth, A. Fowler, B. Foxen, C. Gidney, M. Giustina, R. Graff, T. Huang, E. Jeffrey, Erik Lucero, J. Mutus, O. Naaman, C. Neill, C. Quintana, P. Roushan, Daniel Sank, A. Vainsencher, J. Wenner, T. White, S. Boixo, R. Babbush, V. Smelyanskiy, H. Neven, John M. Martinis	Fluctuations of Energy-Relaxation Times in Superconducting Qubits	arXiv:1809.01043, September 2018
K. Scida, A. Eden, N. Arroyo-Curras, S. MacKenzie, Y. Satik, C.D. Meinhart, J.C. Eijkel, S. Pennathur	Fluorescence-Based Observation of Transient Electrochemical and Electrokinetic Effects at Nanoconfined Bipolar Electrodes	ACS applied materials & interfaces. 2019 Mar 18.
R.-L. Chao, L. Liang, J.-W. Shi, T. Komljenovic, J. Hulme, M. J. Kennedy, J. E. Bowers	Fully Integrated Photonic Millimeter-Wave Tracking Generators on Heterogeneous III-V/Si Platform	IEEE Photonics Technology Letters, (30)10, 919-922, April 10, 2018.
S.G. Lee, C.A. Forman, C. Lee, J. Kearns, E.C. Young, J.T. Leonard, D.A. Cohen, J.S. Speck, S. Nakamura, S.P. DenBaars	GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition	Applied Physics Express, Vol. 11, Issue 6, 062703, 2018.
M.N. Fireman, H. Li, S. Keller, U. K. Mishra, J. S. Speck	Growth of N-polar GaN by ammonia molecular beam epitaxy	Journal of Crystal Growth, vol. 481: North-Holland, pp. 65–70, 2018.
H. Nili, G.C. Adam, B. Hoskins, M. Prezioso, J. Kim, M.R. Mahmoodi, F. Merrikh Bayat, O. Kavehei, D.B. Strukov	Hardware-intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristors	Nature Electronics 1, pp. 197–202, 2018 (Journal Cover).
J.E. Bowers, L. Chang	Heterogeneous integration for optical signal processing	Roadmap on Optical Signal Processing submitted (2018).
M. L. Davenport, M. A. Tran, T. Komljenovic, J. E. Bowers	Heterogeneous Integration of III-V lasers on Si by Bonding	Book Chapter 6, Semiconductors and Semimetals, Vol. 99, Academic Press, October 8, 2018.
W. Xie, T. Komljenovic, J. Huang, M. Tran, M.L. Davenport, A. Torres, P. Pintus,  J. Bowers	Heterogeneous Silicon Photonics Sensing for Autonomous Cars	Optics Express (2018).
L. Chang, A. Boes, X. Guo, D. T. Spencer, MJ. Kennedy, J. D. Peters, N. Volet, J. Chiles, A. Kowligy, N. Nader,  D. D. Hickstein, E. J. Stanton, S. A. Diddams, S. B. Papp, J. E. Bowers	Heterogeneously Integrated GaAs waveguides on Insulator for Efficient Frequency Conversion	Laser and Photonics Reviews, (12)10, 1800149, August 14, 2018.
R. Jones, P. Doussiere, J. B. Driscoll, W. Lin, H. Yu, Y. Akulova, T. Komljenovic, J. E. Bowers	Heterogeneously Integrated Photonics	Nanotechnology Magazine (2018).
M.S. Wong, D. Hwang, A.I. Alhassan, C. Lee, R. Ley, S. Nakamura, S.P. DenBaars	High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition	Optics Express, Vol. 26, Issue 16, 2018.
R. Helkey, A. Saleh, J. Buckwalter, J.E. Bowers	High Performance Photonic Integrated Circuits on Silicon	JSTQE Dec. 2018.
J.C. Norman, D. Jung, Z. Zhang, Y. Wan, S. Liu, C. Shang, R.W. Herrick, W.W. Chow, A.C. Gossard, J.E. Bowers	High Performance Quantum Dot Lasers on Silicon	JQE Sept 2018.
B.P. Yonkee, E.C. Young, S.P. DenBaars, J.S. Speck, S. Nakamura	High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum	Semiconductor Science and Technology, Vol. 33, Issue 1, 015015, 2018.
N. Arroyo-Curras, K. Scida, K.L. Ploense, T.E. Kippin, K.W. Plaxco	High Surface Area Electrodes Generated via Electrochemical Roughening Improve the Signaling of Electrochemical Aptamer-Based Biosensors	Anal. Chem. 2017, 89, 12185-12191.
B.E. Tew, P. Vempati, L.E. Clinger, N.I. Halaszynski, Gilles, Pernot, T. Favaloro, C.C. Bomberger, A. Shakouri, J.E. Bowers, J-H. Bahk,  J. M. O. Zide	High Thermoelectric Power Factor and ZT in TbAs:InGaAs EpitaxialNanocomposite Material	submitted High Thermoelectric Power Factor (2018).
S. Liu, X. Wu, D. Jung, J.C. Norman, M. Kennedy, H.K. Tsang, A.C. Gossard, J.E. Bowers	High-channel-count low-noise 20 GHz passively mode locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity	submitted to Optica (2018).
C. Weisbuch	Historical perspective on the physics of artificial lighting	Comptes Rendus Physique 19, 3, 2018.
D.J. Myers, , K. Gelžinytė, W. Ying Ho, J. Iveland, L. Martinelli, J. Peretti, C. Weisbuch, J. S. Speck	Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes	Journal of Applied Physics, vol. 124, pp. 055703, 2018.
R. Hermann, M.J. Gordon	Imaging Intermolecular Exciton Coupling in Metal-Free Phthalocyanine Nanofilms Using Tip-Enhanced Near-Field Optical Microscopy	J. Phys. Chem. C 2018, 122, 26, 14796-14804.
M. Monovarian, A. Rashidi, A. A. Aragon, S. H. Oh, A. K. Rishinaramangalam, Steven P. DenBaars, D. Feezell	Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes	Applied Physics Letters, 2018.
D. Jung, R. Herrick, J. Norman, K. Turnlund, C. Jan, K. Feng, A. C. Gossard, J. E. Bowers	Impact of threading dislocation density on the lifetime of InAs quantum dot laser on Si	Applied Physics Letters, 112, 153507, April 13, 2018.
F. Merrikh Bayat, M. Prezioso, B. Chakrabarti, H. Nili, I. Kataeva, D. Strukov	Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits	Nature Communications 9, art. 2331, 2018.
M. L. Davenport, S. Liu, J. E. Bowers	Integrated heterogeneous silicon/III-V mode-locked lasers	Photonics Research, (6)5, 468-478, April 20, 2018.
T. A. Huffman, G. M. Brodnik, C. Pinho, S. Gundavarapu, D. Baney, D. J. Blumenthal	Integrated Resonators in an Ultralow Loss Si3N4/SiO2 Platform for Multifunction Applications	IEEE Journal of Selected Topics in Quantum Electronics, vol. 24, no. 4, pp. 1-9, July-Aug (2018).
Y. Liu et al.	Integrated Silicon Nitride Optical Beamforming Networks for Wideband Communications	Integrated Photonics Research, Silicon and Nanophotonics, 2018, p. ITh3B–4.
P. Bhasker, J. Norman, J. Bowers, N. Dagli	Intensity and Phase Modulators at 1.55 μm in GaAs/AlGaAs Layers Directly Grown on Silicon	IEEE/OSA J. of Lightwave Technology, vol. LT-36, No. 18, pp. 4205-4210, September 15, 2018.
A. Spott, E. J. Stanton, A. Torres, M. L. Davenport, C. L. Canedy, I. Vurgaftman, M. Kim, C. S. Kim, C. D. Merritt, W. W. Bewley, J. R. Meyer, J. E. Bowers	Interband Cascade Laser on Silicon	Optica, (5)8, 996-1005, August 16, 2018.
C-C. Chang, A. Nowbahar, V. Mansard, I. Williams, J. Mecca, A. Schmitt, T. Kalantar, T-C. Kuo, T.M. Squires	Interfacial rheology and heterogeneity of aging asphaltene layers at the water-oil interface	Langmuir , 34, 5409−5415 (2018) 10.1021/acs.langmuir.8b00176.
S. Gundavarapu, M. Belt, T.A. Huffman, M.A. Tran, T. Komljenovic, J.E. Bowers, D.J. Blumenthal	Interferometric Optical Gyroscope Based on an Integrated Si3N4 Low-Loss Waveguide Coil	J. Lightwave Technol. 36, 1185-1191 (2018).
D. Feezell, S. Nakamura	Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting	C.R.Physique 19 113–133
C. Lund, A. Agarwal, B. Romanczyk, T. Mates, S. Nakamura, S.P. Denbaars, U.K. Mishra, S. Keller	Investigation of Mg delta-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD	Semiconductor Science and Technology, Vol. 33, Issue 9, 2018.
B.A. Mazin, G.D. Becker, G. Cancelo, K. France, W.C. Fraser, T. Jones, S.R. Meeker, K. O'Brien, J.X. Prochaska, S. Tendulkar, G. Vasisht	KRAKENS: a superconducting MKID integral field spectrograph concept for the Keck I telescope	SPIE, Volume 10702, id. 107020H 20 pp. (2018).
C. Weisbuch, E. Spitz, A. David	LEDs: The new revolution in lighting Foreword	Comptes Rendus Physique 19, 3, 2018.
J. Wu,Y. Fang, B. Markman, H-Y. Tseng, M.J. W. Rodwell,	Lg=30 nm InAs Channel MOSFETs Exhibitingfmax=410 GHz andft=357 GHz	IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 4, APRIL 2018
K. Sun, D. Jung, C. Shang, A. Liu, J. Morgan, J. Zang, Q. Li, J. Klamkin, J. E. Bowers, A. Beling	Low dark current III–V on silicon photodiodes by heteroepitaxy	Optics Express, (26)10, 13605-13613, May 11, 2018.
D. Inoue, Y. Wan, D. Jung, J. Norman, C. Shang, N. Nishiyama, S. Arai, A. C. Gossard, J. E. Bowers	Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si	Applied Physics Letters, 113, 093506, August 30, 2018.
Y. Liu, B. Isaac, J. Kalkavage, E. Adles, T. Clark, J. Klamkin	Low-loss silicon nitride integrated optical beamforming network for wideband communication	Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI, 2018, vol. 10531, p. 1053 118.
Y. Wan, D. Jung, C. Shang, N. Collins, I. MacFarlane, J. Norman, M. Dumont, A. C. Gossard, J. E. Bowers	Low-Threshold Continuous-Wave Operation of Electrically-Pumped 1.55 μm InAs Quantum Dash Microring Lasers	ACS Photonics, December 26, 2018.
A. Nowbahar, V. Mansard, J.  Mecca, M. Paul, T.  Arrowood, T. M. Squires	Measuring Interfacial Polymerization Kinetics Using Microfluidic Interferometry	J. Am. Chem. Soc. 140 , 3173 - 3176 (2018).
H. Wu, C. Li, L. Song, H.-K. Tsang, J. E. Bowers, and D. Dai	Meta-surface-enabled ultra-sharp multimode waveguide bends on silicon	arXiv:1811.06914, October 14, 2018.
D. Hwang, A.J. Mughal, M.S. Wong, A.I. Alhassan,S. Nakamura, S,P. DenBaars	Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition	Appl. Physics Express, Vol. 11, Issue 1, 012102, 2018.
N. Volet, X. Yi, Q.-F. Yang, E. J. Stanton, P. A. Morton, K. Y. Yang, K. J. Vahala and J. E. Bowers	Micro-Resonator Soliton Generated Directly with a Diode Laser	Laser & Photonic Reviews, (12)5, 1700307, April 17, 2018.
T. N. Do, H. Phan, T.-Q. Nguyen, and Y. Visell	Miniature Soft Electromagnetic Actuators for Robotic Applications	Advanced Functional Materials, 2018. Cover article.
R.Dodkins, S.Mahashabde, K.O’Brien, N.Thatte, N.Fruitwala, A.B.Walter, S.R.Meeker, P.Szypryt, B.A.Mazin	MKID digital readout tuning with deep learning	Astronomy and Computing Volume 23, April 2018, Pages 60-71
S. Liu,  J. C. Norman,  D. Jung, MJ Kennedy, A. C. Gossard and J. E. Bowers	Monolithic 9 GHz passively mode locked quantum dot lasers directly grown on on-axis (001) Si	Applied Physics Letters, (113)4, 041108, July 27, 2018.
L.C. Chan, D.E. Morse, and M.J. Gordon	Moth eye-inspired anti-reflective surfaces for improved IR optical systems & visible LEDs fabricated with colloidal lithography and etching	Bioinspir. & Biomim. 13, 041001 (2018).
R. Jiang, X. Shen, J. Fang, P. Wang, E.X. Zhang, J. Chen, D.M. Fleetwood, R.D. Schrimpf, S.W.Kaun, E,C.H. Kyle, et al.	Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs	IEEE Transactions on Device and Materials Reliability, vol. 18, pp. 364-376, Sept, 2018.
E.J. Stanton, A. Spott, J. Peters, M.L. Davenport, A. Malik, N. Volet, J. Liu, C.D. Merritt, W.W. Bewley, I. Vurgaftman, C.S. Kim, J.R. Meyer, J.E. Bowers	Multi-spectral quantum cascade lasers on silicon with integrated multiplexers	Submitted 2018.
A. S. P. Khope, M. Saeidi, R. Yu, X. Wu, A. Netherton, Y. Liu, Z. Zhang, Y. Zia, G. Fleeman, A. Spott, S. Pinna, C. Schow, R. Helkey, L. Theogarajan, R. C. Alferness, A. Saleh, and J. E. Bowers	Multi-wavelength selective crossbar switch	submitted to Optics Express, 2018.
R. Katsumata, R. Limary, Y. Zhang, B.C. Popere, A.T. Heitsch, M. Li, P. Trefonas, R.A. Segalman	Mussel-inspired strategy for stabilizing ultrathin polymer films and its application to spin-on doping of semiconductors	Chem. Mater., 30, 5285-5292 (2018). [DOI]
A. Ariyaratne, D. Bluvstein, B. A. Myers & A. C. Bleszynski Jayich	Nanoscale electrical conductivity imaging using anitrogen-vacancy center in diamond	Nature Communications volume 9, Article number: 2406 (2018)
R. Hermann and M.J. Gordon	Nanoscale optical microscopy and spectroscopy using near-field probes	Ann. Rev. Chem. Bio. Eng. 9, 1 (2018).
L. Galletti, T. Schumann, T. E. Mates, and S. Stemmer	Nitrogen surface passivation of the Dirac semimetal Cd3As2	Phys. Rev. Mater. 2, 124202 (2018).
O.S. Koksaldi, J. Haller, H. Li, B. Romanczyk, M. Guidry, S. Wienecke, S. Keller, U.Mishra	N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance	EDL, July 2018
S-H. Han, A. Mauze, E. Ahmadi, T. Mates, Y. Oshima, and J. S. Speck	n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy	Semiconductor Science and Technology, vol. 33, no. 4: IOP Publishing, pp. 045001, 2018.
E. M. Spanton, A. A. Zibrov, H. Zhou, T. Taniguchi, K. Watanabe, M. P. Zaletel, A. F. Young	Observation of fractional Chern insulators in a van der Waals heterostructure	Science 360, 62–66 (2018).L. Galletti, T. Schumann, T. E. Mates, and S. Stemmer, Nitrogen surface passivation of the Dirac semimetal Cd3As2, Phys. Rev. Mater. 2, 124202 (2018).
T. Schumann, L. Galletti, D. A. Kealhofer, H. Kim, M. Goyal, and S. Stemmer	Observation of the quantum Hall effect in confined films of the three-dimensional Dirac semimetal Cd3As2	Phys. Rev. Lett. 120, 016801 (2018).
H. J. Snijders,J. A. Frey,J. Norman,H. Flayac,V. Savona,A. C. Gossard,J. E. Bowers,M. P. van Exter,D. Bouwmeester,W. Löffler	Observation of the Unconventional Photon Blockade	PHYSICAL REVIEW LETTERS121,043601 (2018)
J. Kang, Y. Matsumoto, X. Li, J. Jiang, X. Xie, K. Kawamoto, M. Kenmoku, J. H. Chu, W. Liu, J. Mao, K. Ueno, K. Banerjee	On-Chip Intercalated-Graphene Inductors for Next-Generation Radio Frequency Electronics	Nature Electronics, Vol. 1, No. 1, pp. 46-51, 2018.
D. Valovcin, H.B. Banks, S. Mack, A. Gossard, K. West, L.  Pfeiffer, M.S. Sherwin	Optical Frequency Combs from High-Order Sideband Generation	Optics Express 26, 29807-29816 (2018) [www][arXiv]
N. Dagli	Optical Modulators	Handbook of Optoelectronics, 2nd Edition: Concepts, Devices and Techniques, vol. 1, Chapter 14, pp. 457-514, CRC Press, Taylor and Francis, 2018.
T. Mizumoto, R. Baets, and J. E. Bowers	Optical nonreciprocal devices for silicon photonics using wafer-bonded magneto-optical garnet materials	MRS Bulletin, (43)6, 419-424, June 11, 2018.
J. C. Norman, D. Jung, Y. Wan, and John E. Bowers	Perspective: The Future of Quantum Dot Photonic Integrated Circuits	Applied Physics Letters Photonics, (3)3, 030901, March 27, 2018.
M. J. Weaver, D. Newsom, F. Luna, W. Löffler, D. Bouwmeester	Phonon interferometry for measuring quantum decoherence	Phys. Rev. A 97, 063832 – Published 14 June 2018
T. Komljenovic, D. Huang, P. Pintus, M. A. Tran, M. L. Davenport, and J. E. Bowers	Photonic Integrated Circuits Using Heterogeneous Integration on Silicon	Proceedings of the IEEE, (106)12, 2246-2257, August 30, 2018.
A. Y. Liu and J. Bowers	Photonic Integration with Epitaxial III-V on Silicon	IEEE Journal of Selected Topics in Quantum Electronics, (24)6, 6000412, July 9, 2018.
M. Buffolo, F. Samparisi, C. De Santi, G. Meneghesso, E. Zanoni, D. Jung, J. Bowers, R. W. Herrick, and M. Meneghini	Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers	submitted to Journal of Quantum Electronics (JQE) (2018).
W. Jin, R. G. Polcawich, P. Morton, and J. Bowers	Piezoelectrically tuned silicon nitride ring resonator	Optics Express, (26)3, 3174-3187, February 5, 2018.
A.E. Cetin,P. Iyidogan, Y. Hayashi, M. Wallen, K. Vijayan,†E. Tu, M. Nguyen, A. Oliphant	Plasmonic Sensor Could Enable Label-Free DNA Sequencing	ACS Sens. 2018, 3, 561−568.
H.J. Snijders, D.N.L. Kok, M.F. van de Stolpe, J. A. Frey, J. Norman A. C. Gossard, J. E. Bowers, M.P. van Exter, D. Bouwmeester, and W. Löffler	Polarized quantum dot cavity-QED and single photons	submitted Physical Review Applied (2018).
D. Ding, D. van Driel, L. M. C. Pereira, J. F. Bauters, M. J. R. Heck, G. Welker, M. J. A. de Dood, A. Vantomme, J. E. Bowers, W. Loer, and D. Bouwmeester	Probing interacting two-level systems with rare-earth ions	arXiv, arXiv:1811.05248, November 13, 2018.
L.Y. Kuritzky, C. Weisbuch, and J. S. Speck	Prospects for 100% wall-plug efficient III-nitride LEDs	Opt. Express, vol. 26, pp. 16600–16608, Jun, 2018.
?. Polshyn, H. Zhou, E. M. Spanton, T. Taniguchi, K. Watanabe, and A. F. Young	Quantitative transport measurements of fractional quantum Hall energy gaps in edgeless graphene devices	Physical Review Letters 121, 226801 (2018).
J.C. Norman, D. Jung, Z. Zhang, Y. Wan, S. Liu, C. Shang, R. Herrick, W.W. Chow, A.C. Gossard, J.E. Bowers	Quantum Dot Lasers for Monolithic Photonic Integration	JQE (2018).
D. Jung, J. Norman, Y. Wan, S. Liu, R. Herrick, J. Selvidge, K. Mukherjee, A. C. Gossard, and J. E. Bowers	Recent Advances in InAs Quantum Dot Lasers Grown on on-axis (001) Silicon by Molecular Beam Epitaxy	Physica Status Solidi A, (216)1, 1800602, January 9, 2019.
A.I. Alhassan, E.C. Young, A.Y. Alyamani, .Albadri, S.Nakamura, S.P. DenBaars, J.S. Speck	Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction	Applied Physics Express, Vol. 11, Issue 4, 042101, 2018.
Z. Gu, S. Pandya, A. Samanta, S. Liu, G. Xiao, C. J. G. Meyers, A. R. Damodaran, H. Barak, A. Dasgupta, S. Saremi, A. Polemi, L. Wu, A.A. Podpirka, A. Will-Cole,C.J. Hawley, P.K.Davies, R.A. York, I. Grinberg, L.W. Martin, J.E. Spanier	Resonant domain-wall-enhanced tunable microwave ferroelectrics	2018 Springer Nature Limited, https://doi.org/10.1038/s41586-018-0434-2.
Y. Kalcheim, N.A. Butakov, N. Vargas, M.H. Lee, J.D.V. Grande, J. Trastoy, P. Salev, J.A. Schuller, and I.K. Schuller	Robust Coupling between Structural and Electronic Transitions in a Mott Material	Physical Review Letters 122, pp. 057601, 1-6 Journal
G. Yu, A. Jenkins, X. Ma, S. A. Razavi, C. He, G. Yin, Q. Shao, Q. L. He, H. Wu, W. Li, W. Jiang, X. Han, X. Li, A. C. Bleszynski Jayich, P. Khalili Amiri, and K. L. Wang	Room-Temperature Skyrmions in an Antiferromagnet-Based Heterostructure	Nano Lett., 2018, 18 (2), pp 980–986
J. Lozi, O. Guyon, N. Jovanovic, S. Goebel, P. Prashant N. Skaf, A. Sahoo, B. Norris, F. Martinache M. N'Diaye, B. Mazin, A.B. Walter, P. Tuthill, T. Kudo, H. Kawahara, T. Kotani, M. Ireland, N. Cvetojevic, E. Huby, S. Lacour, V. Sébastien; T.D. Groff, J.K. Chilcote, J. Kasdin, J. Knight, F. Snik, D. Doelman, Y Minowa, C. Clergeon, N. Takato, M. Tamura, T. Currie, H. Takami, M. Hayashi	SCExAO, an instrument with a dual purpose: perform cutting-edge science and develop new technologies	SPIE, Volume 10703, id. 1070359 12 pp. (2018).
J.S. Lee, S. Choi, M. Pendhakar, D.J. Pennachio, B. Markman, M.J.W. Rodwell, P. Krogstrup, and C.J. Palmstrom	Selective-area chemical beam epitaxy of in-plane one-dimensional channels grown on InP(001) and InP(111)B surfaces	Submitted(2018) – arXiv:1808.04563.
J. Duan, H. Huang, D. Jung,  Z. Zhang, J. Norman, J. E. Bowers, and F. Grillot	Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor	Applied Physics Letters, 112, 251111, June 21, 2018.
M. Khoury, H. Li, B.Bonef, L.Y. Kuritzky, A.J. Mughal,S.Nakamura, J.S. Speck, S.P. DenBaars	Semipolar (20(2)over-bar1) GaN templates on sapphire: 432nm InGaN light-emitting diodes and light extraction simulations	Applied Physics Express, Vol. 11, Issue 3, 036501, 2018.
C. Lee, C. Shen, C. Cozzan, R. M. Farrell, S. Nakamura, A. Y. Alyamani, B. S. Ooi, J. E. Bowers, S. P. DenBaars, and J. S. Speck	Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems	Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105321N, 2018.
S. Mehari, D.A. Cohen, D.L Becerra, S. Nakamura, S.P. DenBaars	Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region	Japanese Journal of Applied Physics 58, 2
C. Shen, T.K. Ng, C. Lee, S. Nakamura, J.S. Speck, S.P. Denbaars, A.Y. Alyamani, M.M. El-Desouki, B.S. Ooi	Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications	Optics express, vol. 26, no. 6: Optical Society of America, pp. A219–A226, 2018.
D.J. Blumenthal, R. Heideman, D. Geuzebroek, A. Leinse and C. Roeloffzen	Silicon nitride in silicon photonics	Proceedings of the IEEE Special Issue on Silicon Photonics, Vol. 106 No. 12 DOI: 10.1109/JPROC.2018.2861576 (2018)
H.J. Snijders, J. A. Frey, J. Norman, H. Flayac, V. Savona, A. C. Gossard, J. E. Bowers, M. P. van Exter, D. Bouwmeester, W. Löffler	Single photons and unconventional photon blockade in quantum dot cavity-QED	arXiv.org > quant-ph > arXiv:1803.10992
A. Jenkins, M. Pelliccione, G. Yu, X. Ma, X. Li, K. L. Wang, A. C. Bleszynski Jayich	Single spin sensing of domain wall structure and dynamics in a thin film skyrmion host	arXiv:1812.01764, December 2018
M. Prezioso, M. Mahmoodi, F. Merrikh Bayat, H. Kim, H. Nili, A. Vincent, and D. Strukov	Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits	Nature Communications 9, art. 5311, 2018.
C. Zube, J. Malindretos, L. Watschke, R.R. Zamani, D. Disterheft, R.G. Ulbrich, A.Rizzi, M. Iza, S. Keller, S.P. DenBaars	Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures	Journal of Applied Physics Vol. 123, Issue 3, 2018
K. Ahadi, H. Kim, and S. Stemmer	Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface	APL Mater. 6, 056102 (2018).
A. Boes, B. Corcoran, L. Chang, J. Bowers, and A. Mitchell	Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits	Laser & Photonics Reviews, (12)4, 1700256, February 23, 2018.
L. Megalini, S. T. Š. Brunelli, W. O. Charles, A. Taylor, B. Isaac, J. E. Bowers, and J. Klamkin	Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition	Materials, 11, 337, February 28, 2018.
L. Chang, A. Boes, P. Pintus, J. Peters, M. Kennedy, X-W. Guo, N. Volet, S-P. Yu, S. Papp, J. Bowers	Strong frequency conversion in heterogeneously integrated GaAs resonators	submitted to Optica (2018).
S. Sonar, V. Fedoseev, M.J. Weaver, F.Luna,E. Vlieg, H. van der Meer,D. Bouwmeester, W. Löffler	Strong thermomechanical squeezing in a far-detuned membrane-in-the-middle system	PHYSICAL REVIEW A98, 013804 (2018)
S. Gundavarapu, G.M. Brodnik, M. Puckett, T. Huffman, D. Bose, R. Behunin, J. Wu, T. Qiu, C. Pinho, N. Chauhan, J. Nohava, P.T. Rakich, K.D. Nelson, M. Salit, D.J. Blumenthal	Sub-hertz fundamental linewidth photonic integrated Brillouin laser	Nat. Photon., 13(1): 60-67 (2019).
S. Lal, J. Lu, B.J. Thibeault, M.H. Wong, S.P. DenBaars, U.K. Mishra	Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization	IEEE Transactions on Electron Devices, 2018.
N.A. Butakov, I. Valmianski, T. Lewi, C. Urban, Z. Ren, A.A. Mikhailovsky, S.D. Wilson, I.K. Schuller, J.A. Schuller	Switchable Plasmonic-Dielectric Resonators with Metal-Insulator Transitions	ACS Photonics 5, pp. 371 Journal
T. Lewi, N.A. Butakov, and J.A. Schuller	Thermal Tuning Capabilities of Semiconductor Metasurface Resonators	Nanophotonics 8, pp.331-338 Journal
N. Liu, J. Peters, J.A. Floro, A. Ramu, J.E. Bowers, M. Zebarjadi	Thermoelectric transport at F4TCNQ－silicon interface	submitted to APL Materials (2018).
M. Goyal, L. Galletti, S. Salmani-Rezaie, T. Schumann, D. A. Kealhofer, and S. Stemmer	Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2	APL Mater. 6, 026105 (2018).
H-H. Chen, J.S. Speck, C. Weisbuch, Y-R Wu	Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations	Appl. Phys. Lett. 113, 153504, 2018.
D. Huang, P. Pintus and J. E. Bowers	Towards heterogeneous integration of optical isolators and circulators with lasers on silicon	Optical Materials Express, (8)9, 2471-2483, August 1, 2018.
M. Monavarian, A. Rashidi, A. A. Aragon, M. Nami, S. H. Oh, S. P. DenBaars, D. Feezell	Trade-off between bandwidth and efficiency in semipolar (20(2)over-bar(1)over-bar) InGaN/GaN single- and multiple-quantum-well light-emitting diodes	Applied Physics Letters, Vol. 112, Issue 19, 2018.
R. Kaminker, I.Kaminker, W.R. Gutekunst, Y. Luo, S. Lee, J. Niu, S. Han, C.J. Hawker	Tuning conformation and properties of peptidomimetic backbones through dual N/Cα-substitution	Chem. Commun. 2018 54, 5237-5240.
R. Kaminker, A. Anastasaki, W.R. Gutekunst, Y. Luo, S-H. Lee, C.J. Hawker	Tuning of protease resistance in oligopeptides through N-alkylation	Chem. Commun. 2018 54, 9631-9634.
L. Galletti, T. Schumann, O. F. Shoron, M. Goyal, D. A. Kealhofer, H. Kim, and S. Stemmer	Two-Dimensional Dirac Fermions in Thin Films of Cd3As2	Phys. Rev. B 97, 115132 (2018).
Y. Liu et al.	Ultra-Low-Loss Silicon Nitride Optical Beamforming Network for Wideband Wireless Applications	IEEE J. Sel. Topics Quantum Electron., vol. 24, no. 4, pp. 1–10, 2018.
M. A. Tran, D. Huang, T. Komljenovic, J. Peters, A. Malik, and J. E. Bowers	Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics	Applied Sciences, 8, 1139, July 12, 2018.
D. Dai, J. Bowers	Ultra-sharp multimode waveguide bends with subwavelength gratings	Laser & Photonics Reviews (2018).
H.A. Dobbs, Y. Kaufman, J. Scott, K. Kristiansen, A.M. Schrader, S.Y. Chen, P. Duda III, J.N. Israelachvili	Ultra‐Smooth, Chemically Functional Silica Surfaces for Surface Interaction Measurements and Optical/Interferometry‐Based Techniques	Advanced Engineering Materials 20 (2), 1700630
C. Conner, T. de Visser,  J. Loessberg , S. Sherman, A. Smith, S. Ma, M.T. Napoli, S. Pennathur	Weld D. Energy Harvesting with a Liquid-Metal Microfluidic Influence Machine	Physical Review Applied. 2018 Apr 5;9(4):044008.
A. Myzaferi, A.J. Mughal, D.A. Cohen, R.M. Farrell, S.Nakamura, J.S. Speck, S.P. Denbaars	Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes	Optics Express, Vol. 26, Issue 10,  12490 , 2018.