Plasma Clean (YES EcoClean)

From UCSB Nanofab Wiki
Revision as of 09:50, 30 August 2022 by Silva (talk | contribs)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search
Plasma Clean (YES EcoClean)
IMG 5385.JPG
Location Bay 5
Tool Type Dry Etch
Manufacturer YES
Description EcoClean Asher

Primary Supervisor Lee Sawyer
(805) 893-2123

Secondary Supervisor

Aidan Hopkins

Recipes Dry Etch RecipesN/A


The YES EcoClean system is an ICP downstream asher used for the removal of resist and other organics.

4" wafers are cassette loaded or smaller samples are loaded onto 4" carriers into the system.

Samples can be heated from ~120°C to 200°C by controlling the sample height via the lift pins during process, while being exposed to ICP-cracked oxygen to remove organic materials.

Etch Method

The excitation of the oxygen is done remotely and a baffle keeps charged ions from reaching the surface, leaving primarily neutral Oxygen radicals in the gas mixture. Radicals diffuse and are scattered across the wafer surface for efficient cleaning and PR removal without any ion damage. This behaves like a wet-etch with reactive Oxygen.  No ion bombardment at all, so isotropic (omni-directional) etch - attacks sidewalls just as fast as top surfaces.  Heat is used to increase reaction rate.  Treat this as a purely chemical process, accelerated by heat (Arrhenius plot - rate goes up exponentially with temperature).


Resist etch rates of multiple microns per minute can be achieved.

Use this where you know a purely chemical etch will suffice, for example PR etching.  PR stripping is fast and cassette loaded.  Works best for PR that hasn't been significantly changed (eg. Chlorinated, or Polymerized - in these cases some small residue can be left.) - follow up with PEii Technics etch to remove more stubborn residues.

See the process pages below for etch recipes for various resist removal recipes.



Recipes > Dry Etching > Oxygen Plasma > YES Ecoclean Recipes