Difference between revisions of "Plasma Clean (YES EcoClean)"

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{{tool|{{PAGENAME}}
 
{{tool|{{PAGENAME}}
|picture=YES_EcoClean.jpg
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|picture= IMG_5385.JPG
 
|type = Dry Etch
 
|type = Dry Etch
|super= Mike Silva
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|super= Lee Sawyer
|phone=(805)839-3918x219
 
 
|location=Bay 5
 
|location=Bay 5
|email=silva@ece.ucsb.edu
 
 
|description = EcoClean Asher
 
|description = EcoClean Asher
|manufacturer = YES
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|manufacturer = [https://www.yieldengineering.com YES]
 
|materials =  
 
|materials =  
 
}}  
 
}}  
=About=
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==About==
  
The YES EcoClean system is an ICP downstream asher used for the removal of resist and other organic4" wafers are cassette loaded or smaller samples are loaded onto 4" carriers into the system.  Samples can be heated from ~120C to 200C by controlling the sample height via the lift pins during process, while being exposed to ICP-cracked oxygen to remove organic materials.  The excitation of the oxygen is done remotely and a baffle keeps ions from reaching the surface.  Radicals diffuse and are scattered across the wafer surface for efficient cleaning and PR removal without any ion damage.  Resist etch rates of multiple microns per minute can be achieved.  See the process pages below for etch recipes for various resist removal recipes.
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The YES EcoClean system is an ICP downstream asher used for the removal of resist and other organics.   
  
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4" wafers are cassette loaded or smaller samples are loaded onto 4" carriers into the system. 
  
[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Recipe Pages]]
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Samples can be heated from ~120°C to 200°C by controlling the sample height via the lift pins during process, while being exposed to ICP-cracked oxygen to remove organic materials.
  
[https://www.yieldengineering.com/Products/Plasma-Strip-Descum-Systems/YES-%C3%89coClean YES EcoClean Manufacturer Page]
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=== Etch Method ===
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The excitation of the oxygen is done remotely and a baffle keeps charged ions from reaching the surface, leaving primarily neutral Oxygen radicals in the gas mixture.  Radicals diffuse and are scattered across the wafer surface for efficient cleaning and PR removal without any ion damage. This behaves like a wet-etch with reactive Oxygen.  No ion bombardment at all, so isotropic (omni-directional) etch - attacks sidewalls just as fast as top surfaces.  Heat is used to increase reaction rate.  Treat this as a purely chemical process, accelerated by heat (Arrhenius plot - rate goes up exponentially with temperature).
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=== Applications ===
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Resist etch rates of multiple microns per minute can be achieved. 
 +
 
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Use this where you know a purely chemical etch will suffice, for example PR etching.  PR stripping is fast and cassette loaded.  Works best for PR that hasn't been significantly changed (eg. Chlorinated, or Polymerized - in these cases some small residue can be left.) - follow up with [[Ashers (Technics PEII)|PEii Technics]] etch to remove more stubborn residues.
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 +
See the process pages below for etch recipes for various resist removal recipes.
 +
 
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==Documentation==
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*[https://wiki.nanotech.ucsb.edu/w/images/f/f8/YES_SOP_Rev_C.pdf YES Plasma Strip System Standard Operating Procedure]
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*[https://www.yieldengineering.com/Products/Plasma-Strip-Descum-Systems/YES-%C3%89coClean YES EcoClean Manufacturer Page]
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== Recipes ==
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Recipes > Dry Etching > Oxygen Plasma > [[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|'''<u>YES Ecoclean Recipes</u>''']]

Latest revision as of 10:22, 23 June 2021

Plasma Clean (YES EcoClean)
IMG 5385.JPG
Tool Type Dry Etch
Location Bay 5
Supervisor Lee Sawyer
Supervisor Phone (805) 893-2123
Supervisor E-Mail lee_sawyer@ucsb.edu
Description EcoClean Asher
Manufacturer YES
Dry Etch Recipes


About

The YES EcoClean system is an ICP downstream asher used for the removal of resist and other organics.

4" wafers are cassette loaded or smaller samples are loaded onto 4" carriers into the system.

Samples can be heated from ~120°C to 200°C by controlling the sample height via the lift pins during process, while being exposed to ICP-cracked oxygen to remove organic materials.

Etch Method

The excitation of the oxygen is done remotely and a baffle keeps charged ions from reaching the surface, leaving primarily neutral Oxygen radicals in the gas mixture. Radicals diffuse and are scattered across the wafer surface for efficient cleaning and PR removal without any ion damage. This behaves like a wet-etch with reactive Oxygen.  No ion bombardment at all, so isotropic (omni-directional) etch - attacks sidewalls just as fast as top surfaces.  Heat is used to increase reaction rate.  Treat this as a purely chemical process, accelerated by heat (Arrhenius plot - rate goes up exponentially with temperature).

Applications

Resist etch rates of multiple microns per minute can be achieved.

Use this where you know a purely chemical etch will suffice, for example PR etching.  PR stripping is fast and cassette loaded.  Works best for PR that hasn't been significantly changed (eg. Chlorinated, or Polymerized - in these cases some small residue can be left.) - follow up with PEii Technics etch to remove more stubborn residues.

See the process pages below for etch recipes for various resist removal recipes.

Documentation

Recipes

Recipes > Dry Etching > Oxygen Plasma > YES Ecoclean Recipes