Difference between revisions of "Plasma Activation (EVG 810)"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(link to recipes page, not yet fixed Tool info link)
Line 23: Line 23:
* [https://signupmonkey.ece.ucsb.edu/wiki/images/3/35/EVG_Plasma_Activation_SOP.pdf Plasma Activation Standard Operating Procedure]
*[https://signupmonkey.ece.ucsb.edu/wiki/images/3/35/EVG_Plasma_Activation_SOP.pdf Plasma Activation Standard Operating Procedure]
== Recipes ==
Please see the [[Oxygen Plasma System Recipes#Plasma Activation .28EVG 810.29|Oxygen Plasma Recipe]] page for standard EVG recipes.

Revision as of 14:17, 11 September 2019

Plasma Activation (EVG 810)
Tool Type Dry Etch
Location Bay 7
Supervisor Lee Sawyer
Supervisor Phone (805) 893-2123
Supervisor E-Mail lee_sawyer@ucsb.edu
Description Plasma Surface Activation
Manufacturer EVG Group
Dry Etch Recipes
Sign up for this tool


This a capacitively coupled Oxygen plasma activation system used exclusively for the surface activation of clean surfaces prior to wafer bonding. This technique allows bonding temperatures to be lowered and is used as a companion tool to the Karl-Suss SB6 wafer bond tool.

Detailed Specifications

  • Gases used: O2 and N2
  • Sample size: pieces to 6” wafer
  • Max power: 200W
  • Recipes characterized for substrate thicknesses between 250um and 750um. Thicknesses outside of this range need to have parameters optimized to minimize reflective power.



Please see the Oxygen Plasma Recipe page for standard EVG recipes.