Difference between revisions of "Plasma Activation (EVG 810)"
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*Recipes characterized for substrate thicknesses between 250um and 750um. Thicknesses outside of this range need to have parameters optimized to minimize reflective power. |
*Recipes characterized for substrate thicknesses between 250um and 750um. Thicknesses outside of this range need to have parameters optimized to minimize reflective power. |
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| − | == |
+ | ==Documentation== |
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| − | [https:// |
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/8/82/EVG_Plasma_Activation_SOP_Rev_B.pdf Plasma Activation Standard Operating Procedure] |
| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/9/93/EVG_Plasma_Activation_Recipe_Copying.pdf How to copy recipes] |
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| + | |||
| + | ==Recipes== |
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| + | Please see the [[Oxygen Plasma System Recipes#Plasma Activation .28EVG 810.29|Oxygen Plasma Recipe]] page for standard EVG recipes. |
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Revision as of 18:32, 6 April 2020
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About
This a capacitively coupled Oxygen plasma activation system used exclusively for the surface activation of clean surfaces prior to wafer bonding. This technique allows bonding temperatures to be lowered and is used as a companion tool to the Karl-Suss SB6 wafer bond tool.
Detailed Specifications
- Gases used: O2 and N2
- Sample size: pieces to 6” wafer
- Max power: 200W
- Recipes characterized for substrate thicknesses between 250um and 750um. Thicknesses outside of this range need to have parameters optimized to minimize reflective power.
Documentation
Recipes
Please see the Oxygen Plasma Recipe page for standard EVG recipes.