Difference between revisions of "Packaging Recipes"

Revision as of 11:07, 17 October 2018

Dicing Saw Recipes (ADT 7100)

Cutting Parameters

Recommended Dicing Parameters

Material	Blade P/N	Spindle Speed (KRPM)	Cut Speed (mm/s)
Alumina, AlN	2.187-8C-54RU-3	25	0.5-2
Ceramic	2.187-4C-30RU-3	18	0.5-2
GaAs	2.187-4C-9RU-3	35	1-5
GaN (<550um)	2.187-4C-30RU-3	35	0.5-3
GaN (>550um)	2.187-8C-30RU-3	35	0.5-2
Glass/Fused Silica	2.187-4C-22RU-3	25	1-5
InP	2.187-4C-9RU-3	35	1-5
Quartz	2.187-4C-30RU-3	25	1-5
Sapphire	2.187-8C-54RU-3	18	0.5-2
Si	2.187-4C-9RU-3	35	4-10
Si on Glasss	2.187-4C-9RU-3	25	1-5
SiC	2.187-8C-30RU-3	25	0.5-2
Ti	2.187-8C-54RU-3	15	0.5-2

Blade Diam	Flange Diam.	Blade Exposure
2.187" (55.55mm)	47mm	4.275mm
2.187" (55.55mm)	49mm	3.275mm
2.187" (55.55mm)	51mm	2.275mm
2.187" (55.55mm)	52mm	1.775mm
2.187" (55.55mm)	53mm	1.275mm

Blade Diam	Flange Diam.	Blade Exposure

Mounting/Unmounting Samples

The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is XYZXYZ. Data Sheet Here.

Procedure for mounting sample on UV-Release Tape
Full Release: 60 sec exposure
Partial Release for Shipping: 9 sec exposure

Surface Protection

Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe. Contact Alignment PR Recipes Stepper PR Recipes

Perform your dicing
Strip the PR in Acetone and ISO & N2 dry

Wafer Bonder (Logitech WBS7)

This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

Wax Mounting Procedure, with Spin-On Crystalbond

Draft only - in progress.  -- Demis 2018-10-16

Mix a fresh squirt bottle of CrystalBond diluted with Acetone (see Don Freeborn for method).
- XYZ grams of crystalbond, mixed into
- XYZ mL of Acetone, in dedicated squirt bottle
- Shake/stir to completely dissolve the wax
Place 4-inch silicon carrier wafer on POLOS spinner in solvent bench, with non-vacuum 4-inch chuck installed.
Set up POLOS recipe
- Spin at XYZ rpm for XYZ sec.
Squirt wax solution onto wafer
I/O to spin.
Place carrier wafer on Logitech bonder surface
Place sample to be bonded on top
Place 110mm chemical filter paper on top
Close lid, secure lid clamp
Run recipe:
- XYZ °C
- XYZ seconds
- Vacuum etc.?

@@ Line 4: / Line 4: @@
 === Cutting Parameters ===
 {| class="wikitable"
-!Material
+| colspan="4" |Recommended Dicing Parameters
-!Blade Type
-!Spindle Speed
-!Cut Speed
 |-
 |
@@ Line 14: / Line 11: @@
 |
 |-
-|
+|Material
-|
+|Blade P/N
-|
+|Spindle Speed (KRPM)
-|
+|Cut Speed (mm/s)
+|-
+|Alumina, AlN
+|2.187-8C-54RU-3
+|25
+|0.5-2
+|-
+|Ceramic
+|2.187-4C-30RU-3
+|18
+|0.5-2
+|-
+|GaAs
+|2.187-4C-9RU-3
+|35
+|1-5
+|-
+|GaN  (<550um)
+|2.187-4C-30RU-3
+|35
+|0.5-3
+|-
+|GaN  (>550um)
+|2.187-8C-30RU-3
+|35
+|0.5-2
+|-
+|Glass/Fused Silica
+|2.187-4C-22RU-3
+|25
+|1-5
+|-
+|InP
+|2.187-4C-9RU-3
+|35
+|1-5
+|-
+|Quartz
+|2.187-4C-30RU-3
+|25
+|1-5
+|-
+|Sapphire
+|2.187-8C-54RU-3
+|18
+|0.5-2
+|-
+|Si
+|2.187-4C-9RU-3
+|35
+|4-10
+|-
+|Si on Glasss
+|2.187-4C-9RU-3
+|25
+|1-5
+|-
+|SiC
+|2.187-8C-30RU-3
+|25
+|0.5-2
+|-
+|Ti
+|2.187-8C-54RU-3
+|15
+|0.5-2
+|}
+{| class="wikitable"
+!Blade Diam
+!Flange Diam.
+!Blade Exposure
+|-
+|2.187" (55.55mm)
+|47mm
+|4.275mm
+|-
+|2.187" (55.55mm)
+|49mm
+|3.275mm
+|-
+|2.187" (55.55mm)
+|51mm
+|2.275mm
+|-
+|2.187" (55.55mm)
+|52mm
+|1.775mm
 |-
-|
+|2.187" (55.55mm)
-|
+|53mm
-|
+|1.275mm
-|
 |}
 {| class="wikitable"