PECVD Recipes

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Back to [[{{{1}}} Recipes]].

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

  1. Standard clean
    1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
    2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
    3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
    4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
  2. Nitride 2 (HF, n=2.0, 93nm/min)
    1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17

SiO2 deposition (PECVD #2)

  1. Standard clean
    1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
    2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
    3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
    4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
  2. Oxide (HF, n=1.46, 25nm/min)
    1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420

ICP-PECVD (Unaxis VLR)