PECVD Recipes

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Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)


SiO2 deposition (PECVD #1)

SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

  • Deposition Rate: ≈ 9.0 nm/min
  • Refractive Index: ≈ 1.952
  • Stress ≈ 484MPa

SiO2 deposition (PECVD #2)

  • Deposition Rate: ≈ 28.0 nm/min
  • Refractive Index: ≈ 1.472
  • Stress ≈ -270MPa

LS SiN deposition (PECVD #2)

  • Deposition Rate: ≈ 8.34 nm/min
  • Refractive Index: ≈ 1.932
  • Stress ≈ -45MPa

Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiN (100% SiH4 )

50° 100° 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°

Amorphous Si (100%SiH4 Ar He)

90° 250°