Difference between revisions of "PECVD Recipes"

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(→‎PECVD 1 (PlasmaTherm 790): added placeholders for varying-stress SiN & SiOxNy)
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=== SiO<sub>2</sub> (100% SiH<sub>4</sub> LDR) ===
 
=== SiO<sub>2</sub> (100% SiH<sub>4</sub> LDR) ===
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{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
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|- bgcolor="#D0E7FF"
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!width=350 align=center|50°
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!width=350 align=center|100°
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!width=350 align=center|250°
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|-align=left
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|
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*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-50C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (50°)]]
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|
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*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-100C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (100°)]]
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*[[Media:PECVD2-SiO2-LDR-100% SiH4.pdf|SiO<sub>2</sub> Comparison Table - LDR (100°)]]
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*[[Media:PECVD2-SiO2-SEM-LDR SiO2-100% SiH4-100C-15W.pdf|SiO<sub>2</sub> SEM sidewall coverage]]
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|
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*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-250C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (250°)]]
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*[[Media:PECVD2-SiO2-LDR-100% SiH4.pdf|SiO<sub>2</sub> Comparison Table - LDR (250°)]]
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|-
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|}
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=== Amorphous Si (100% SiH<sub>4</sub> Ar He) ===
 
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Revision as of 10:56, 4 September 2013

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

SiO2 deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiN (100% SiH4 )

50° 100° 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°

Amorphous Si (100% SiH4 Ar He)

50° 100° 250°