Difference between revisions of "PECVD Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(→‎PECVD 1 (PlasmaTherm 790): added placeholders for varying-stress SiN & SiOxNy)
Line 4: Line 4:
 
*[[media:PECVD1-SiN-Recipe.pdf|SiN Deposition Recipe]]
 
*[[media:PECVD1-SiN-Recipe.pdf|SiN Deposition Recipe]]
 
*[[media:PECVD1-SiN-Data.pdf|SiN Deposition Particle Thickness Data]]
 
*[[media:PECVD1-SiN-Data.pdf|SiN Deposition Particle Thickness Data]]
 +
<!-- Placeholders - Not uploaded yet-->
 +
* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Recipes]]
 +
* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Plot]]
  
 
== SiO<sub>2</sub> deposition (PECVD #1)  ==
 
== SiO<sub>2</sub> deposition (PECVD #1)  ==
 
*[[media:PECVD1-SiO2-Recipe.pdf|SiO<sub>2</sub> Deposition Recipe]]
 
*[[media:PECVD1-SiO2-Recipe.pdf|SiO<sub>2</sub> Deposition Recipe]]
 
*[[media:PECVD1-SiO2-Data.pdf|SiO<sub>2</sub> Deposition Particle Thickness Data]]
 
*[[media:PECVD1-SiO2-Data.pdf|SiO<sub>2</sub> Deposition Particle Thickness Data]]
 +
 +
== SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)  ==
 +
<!-- Placeholders - Not uploaded yet-->
 +
*[[media:PECVD1-SiON-Recipe.pdf|SiO<sub>x</sub>N<sub>y</sub> Deposition Recipes - Varying N/O Ratio]]
 +
*[[media:PECVD1-SiON-Plot.pdf|SiO<sub>x</sub>N<sub>y</sub> Stress/Index vs. O/N Ratio]]
  
 
=[[PECVD 2 (Advanced Vacuum)]]=
 
=[[PECVD 2 (Advanced Vacuum)]]=

Revision as of 14:02, 13 August 2013

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

SiO2 deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiN (100% SiH4 )

50° 100° 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°