Difference between revisions of "PECVD Recipes"

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(→‎Cleaning Recipes (PECVD #2): added cleaning times)
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{{recipes|Vacuum Deposition}}
  
{{recipes|Vacuum Deposition}}
 
=[[PECVD 1 (PlasmaTherm 790)]]=
  
=[[PECVD 1 (PlasmaTherm 790)]]=
−
==== Historical Particulate Data ====
 +
====Historical Particulate Data====
   
 
*[https://docs.google.com/spreadsheets/d/1a0XrY6HuJ6L9niThZYI-u4XH69Hnbe3jkm1qKmrR8Rg/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2015]
  
*[https://docs.google.com/spreadsheets/d/1a0XrY6HuJ6L9niThZYI-u4XH69Hnbe3jkm1qKmrR8Rg/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2015]
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*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4 Standard Recipe]
  
*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4 Standard Recipe]
⚫
==== Historical Data ====
  
   
−
===== Thin-Film Properties =====
 +
====Historical Data====
  +
  +
=====Thin-Film Properties=====
   
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN 100nm Data 2014]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN 100nm Data 2014]
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*[https://docs.google.com/spreadsheets/d/13jY5T_PW1a3GjHIbR0GuUbIhmxClQfvLgzaUtl3YniE/edit#gid=sharing SiN 300nm Data 2021]
  
*[https://docs.google.com/spreadsheets/d/13jY5T_PW1a3GjHIbR0GuUbIhmxClQfvLgzaUtl3YniE/edit#gid=sharing SiN 300nm Data 2021]
   
−
===== Uniformity Data =====
 +
=====Uniformity Data=====
   
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 100 nm Thickness uniformity 2014]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 100 nm Thickness uniformity 2014]
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==SiO<sub>2</sub> deposition (PECVD #1)==
  
==SiO<sub>2</sub> deposition (PECVD #1)==
  +
 
*[https://docs.google.com/spreadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= SiO2 Standard Recipe]
  
*[https://docs.google.com/spreadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= SiO2 Standard Recipe]
   
−
==== Historical Data ====
 +
====Historical Data====
   
−
===== Thin-Film Properties =====
 +
=====Thin-Film Properties=====
   
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Data 2014]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Data 2014]
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*[https://docs.google.com/spreadsheets/d/1I-0Ih_F9pWeOwXeEQC6IFYKNB6bBLSoBiyX8Eu3pwFg/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2021]
  
*[https://docs.google.com/spreadsheets/d/1I-0Ih_F9pWeOwXeEQC6IFYKNB6bBLSoBiyX8Eu3pwFg/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2021]
   
−
===== Thick-Film Properties =====
 +
=====Thick-Film Properties=====
  +
 
*[https://docs.google.com/spreadsheets/d/1XgUlCaCv3jCK9RyrI553PkIS0PmiAlbWjsDwK5TOH3I/edit#gid=sharing SiO<sub>2</sub> Thick film Data 2021]
  
*[https://docs.google.com/spreadsheets/d/1XgUlCaCv3jCK9RyrI553PkIS0PmiAlbWjsDwK5TOH3I/edit#gid=sharing SiO<sub>2</sub> Thick film Data 2021]
   
−
==== Uniformity Data ====
 +
====Uniformity Data====
   
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDQ3VEtZQVRpdVdlbGtIZHpTNmFzNmc&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2014]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDQ3VEtZQVRpdVdlbGtIZHpTNmFzNmc&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2014]
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*[https://docs.google.com/spreadsheets/d/1jThamYtEiH3lVz4IzoG9ILxBG8-TufIKnUd8V0qKQU0/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2021]
  
*[https://docs.google.com/spreadsheets/d/1jThamYtEiH3lVz4IzoG9ILxBG8-TufIKnUd8V0qKQU0/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2021]
   
−
== Low-Stress SiN - LS-SiN (PECVD#1) ==
 +
==Low-Stress SiN - LS-SiN (PECVD#1)==
   
 
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf LS SiN Standard Recipe]
  
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf LS SiN Standard Recipe]
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*[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=sharing LS SiN 1000A Thickness uniformity 2014]
  
*[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=sharing LS SiN 1000A Thickness uniformity 2014]
   
−
== SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1) ==
 +
==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)==
   
 
*[//wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]
  
*[//wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]
   
−
== Cleaning Recipes (PECVD #1) ==
 +
==Cleaning Recipes (PECVD #1)==
 
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
 
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
⚫
# Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
 
⚫
# Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
 
   
  ⚫
#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
⚫
=== [//wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe: "CF4/O2 Clean"] ===
  
  ⚫
#Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
  +
  ⚫
===[//wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe: "CF4/O2 Clean"]===
 
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it.
  
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it.
   
 
=[[PECVD 2 (Advanced Vacuum)]]=
  
=[[PECVD 2 (Advanced Vacuum)]]=
   
−
==== Historical Particulate Data ====
 +
====Historical Particulate Data====
   
 
*[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates (Gain4) in PECVD#2 2015]
  
*[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates (Gain4) in PECVD#2 2015]
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==SiO<sub>2</sub> deposition (PECVD #2)==
  
==SiO<sub>2</sub> deposition (PECVD #2)==
   
−
==== Standard Recipe ====
 +
====Standard Recipe====
   
   
 
*[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= STD SiO2 Recipe]
  
*[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= STD SiO2 Recipe]
   
−
==== Historical Data ====
 +
====Historical Data====
   
−
===== Thin-Film Properties =====
 +
=====Thin-Film Properties=====
   
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data 2014]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data 2014]
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*[https://docs.google.com/spreadsheets/d/10XA3WnHjUZOLFunwUIlM2IqaRIiX_EGb6Jj_bw84gkI/edit#gid=sharing Oxide Data 2021]
  
*[https://docs.google.com/spreadsheets/d/10XA3WnHjUZOLFunwUIlM2IqaRIiX_EGb6Jj_bw84gkI/edit#gid=sharing Oxide Data 2021]
   
−
===== Thin-Film Properties =====
 +
=====Thin-Film Properties=====
  +
 
*[https://docs.google.com/spreadsheets/d/19Z8IAVgumWuH0t8RN23LJ2wWZP7jYYLwRl9pDQP4obI/edit#gid=sharing Thick Oxide Data 2021]
  
*[https://docs.google.com/spreadsheets/d/19Z8IAVgumWuH0t8RN23LJ2wWZP7jYYLwRl9pDQP4obI/edit#gid=sharing Thick Oxide Data 2021]
   
−
===== Uniformity Data =====
 +
=====Uniformity Data=====
   
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness Uniformity 2014]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness Uniformity 2014]
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==SiN deposition (PECVD #2)==
  
==SiN deposition (PECVD #2)==
   
−
==== Standard Recipe ====
 +
====Standard Recipe====
   
 
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4c/SiNx_Films_by_PECVD2.pdf SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate]
  
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4c/SiNx_Films_by_PECVD2.pdf SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate]
 
*[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= STD Nitride2 Recipe]
  
*[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= STD Nitride2 Recipe]
   
−
==== Historical Data ====
 +
====Historical Data====
   
−
===== Thin-Film Properties =====
 +
=====Thin-Film Properties=====
   
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014]
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*[https://docs.google.com/spreadsheets/d/1piGMPEHXiUV5WMNfaTFKdL1pnE8W2yrWHkNWHd7Au1A/edit#gid=sharing Nitride2 Data 2021]
  
*[https://docs.google.com/spreadsheets/d/1piGMPEHXiUV5WMNfaTFKdL1pnE8W2yrWHkNWHd7Au1A/edit#gid=sharing Nitride2 Data 2021]
   
−
===== Uniformity Data =====
 +
=====Uniformity Data=====
   
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness Uniformity 2014]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness Uniformity 2014]
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''Low-Stress SilIcon Nitride (< 100 MPa)''
  
''Low-Stress SilIcon Nitride (< 100 MPa)''
   
−
==== Standard Recipe ====
 +
====Standard Recipe====
   
 
*[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= STD LS Nitride2 Recipe]
  
*[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= STD LS Nitride2 Recipe]
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**[//wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]
  
**[//wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]
   
−
==== Historical Data ====
 +
====Historical Data====
   
−
===== Thin-Film Properties =====
 +
=====Thin-Film Properties=====
   
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data 2014]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data 2014]
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*[https://docs.google.com/spreadsheets/d/1qzVA44esh71655lE1rrpGkKKNTyZRC_mv3IaiZ_HAWQ/edit#gid=sharing LS Nitride2 Data 2021]
  
*[https://docs.google.com/spreadsheets/d/1qzVA44esh71655lE1rrpGkKKNTyZRC_mv3IaiZ_HAWQ/edit#gid=sharing LS Nitride2 Data 2021]
   
−
===== Uniformity Data =====
 +
=====Uniformity Data=====
   
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness Uniformity 2014]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness Uniformity 2014]
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*[//wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Films and Their Stress]
  
*[//wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Films and Their Stress]
   
−
== Cleaning Recipes (PECVD #2) ==
 +
==Cleaning Recipes (PECVD #2)==
  +
⚫
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
  
  +
=== Cleaning Procedure (PECVD#2) ===
⚫
#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  
  ⚫
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.
⚫
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
  
  +
The clean is done in two steps:
⚫
===[//wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe: "STD CF4/O2 Clean recipe"] ===
  
  +
  ⚫
#(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
  ⚫
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
  +
  ⚫
===[//wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe: "STD CF4/O2 Clean recipe"]===
 
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it.
  
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it.
  +
  +
=== Clean Times (PECVD#2) ===
  +
{| class="wikitable"
  +
!Film Deposited
  +
!Cleaning Time (Dry)
  +
|-
  +
|SiO<sub>2</sub>
  +
|1 min. clean for every 1 min. deposition
  +
|-
  +
|Si<sub>3</sub>N<sub>4</sub>
  +
|1 min. clean for every 7 min of deposition
  +
|-
  +
|If > 29min total dep time
  +
(Season + Dep)
  +
|Wet Clean the Upper Lid/Chamber
  +
DI water then Isopropyl Alcohol on chamber wall & portholes
  +
|}
  +
<br />
   
 
=[[ICP-PECVD (Unaxis VLR)]]=
  
=[[ICP-PECVD (Unaxis VLR)]]=
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The system currently has '''Deuterated Silane (SiD<sub>4</sub>) installed''' - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
  
The system currently has '''Deuterated Silane (SiD<sub>4</sub>) installed''' - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
   
−
==== Historical Particulate Data ====
 +
====Historical Particulate Data====
  +
⚫
* [https://docs.google.com/spreadsheets/d/1ZzbpDmkOI3IvGuKqyiQIP44sYJ89E3Zs9sLvjxvWMsc/edit#gid=sharing Particulates in Unaxis films @250C-2019]
  
−
* [https://docs.google.com/spreadsheets/d/1fMebt-6BfAurcjMv1aDsmm6VgPqokU73_2ReZFqzEEk/edit#gid=sharing Particulates in Unaxis films @250C-2020]
 +
*[https://docs.google.com/spreadsheets/d/1ZzbpDmkOI3IvGuKqyiQIP44sYJ89E3Zs9sLvjxvWMsc/edit#gid=sharing Particulates in Unaxis films @250C-2019]
  ⚫
*[https://docs.google.com/spreadsheets/d/1fMebt-6BfAurcjMv1aDsmm6VgPqokU73_2ReZFqzEEk/edit#gid=sharing Particulates in Unaxis films @250C-2020]
  +
  ⚫
====Standard Recipes====
   
⚫
==== Standard Recipes ====
  
 
*[https://docs.google.com/spreadsheets/d/1T_4gaJQ3wHSNptoAtFR1fN0ePwfw3PsQ0DLSjqGeyM4/edit#gid=sharing SiO2 LDR 250C Recipe-2020]
  
*[https://docs.google.com/spreadsheets/d/1T_4gaJQ3wHSNptoAtFR1fN0ePwfw3PsQ0DLSjqGeyM4/edit#gid=sharing SiO2 LDR 250C Recipe-2020]
 
*[https://docs.google.com/spreadsheets/d/1nsdGPpfyZfIesyYG1PIU9uYyuzQWrfpsvVWM6J_H6BI/edit#gid=sharing SiO2 HDR 250C Recipe-2020]
  
*[https://docs.google.com/spreadsheets/d/1nsdGPpfyZfIesyYG1PIU9uYyuzQWrfpsvVWM6J_H6BI/edit#gid=sharing SiO2 HDR 250C Recipe-2020]
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''Low-Deposition Rate SiO<sub>2</sub>''
 
''Low-Deposition Rate SiO<sub>2</sub>''
   
−
==== Historical Data ====
 +
====Historical Data====
−
===== Thin-Film Properties =====
 +
=====Thin-Film Properties=====
 
This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]].
  
This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]].
  +
 
*[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=sharing SiO2 LDR 250C 300nm Data-2019]
  
*[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=sharing SiO2 LDR 250C 300nm Data-2019]
 
*[https://docs.google.com/spreadsheets/d/1bU2Gu3x3DNyrq8skMAQZJCsra-IcoDCT0U5D135YPgc/edit#gid=sharing SiO2 LDR 250C 300nm Data-2020]
  
*[https://docs.google.com/spreadsheets/d/1bU2Gu3x3DNyrq8skMAQZJCsra-IcoDCT0U5D135YPgc/edit#gid=sharing SiO2 LDR 250C 300nm Data-2020]
  +
⚫
===== Uniformity Data =====
  
  ⚫
=====Uniformity Data=====
  +
 
*[https://docs.google.com/spreadsheets/d/1Xi21OrargcNRthZ2fM_56APB8O599ctDfq5E_6B5Ft0/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2019]
  
*[https://docs.google.com/spreadsheets/d/1Xi21OrargcNRthZ2fM_56APB8O599ctDfq5E_6B5Ft0/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2019]
 
*[https://docs.google.com/spreadsheets/d/1-ytu5R75FAXNfhJZTRuK2eRZyu_L6Hy1BWV2zN6_tRA/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2020]
  
*[https://docs.google.com/spreadsheets/d/1-ytu5R75FAXNfhJZTRuK2eRZyu_L6Hy1BWV2zN6_tRA/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2020]
Line 248: Line 281:
 
''High-Deposition Rate SiO<sub>2</sub>''
 
''High-Deposition Rate SiO<sub>2</sub>''
   
−
==== Historical Data ====
 +
====Historical Data====
−
===== Thin-Film Properties =====
 +
=====Thin-Film Properties=====
 
This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]].
  
This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]].
  +
 
*[https://docs.google.com/spreadsheets/d/16s-tUna9xrkKneK1lE-qSPuUHWlDmP6Qu3IngBXP3R8/edit#gid=sharing SiO2 HDR 250C 300nm Data-2019]
  
*[https://docs.google.com/spreadsheets/d/16s-tUna9xrkKneK1lE-qSPuUHWlDmP6Qu3IngBXP3R8/edit#gid=sharing SiO2 HDR 250C 300nm Data-2019]
 
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=sharing SiO2 HDR 250C 300nm Data-2020]
  
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=sharing SiO2 HDR 250C 300nm Data-2020]
  +
⚫
===== Uniformity Data =====
  
  ⚫
=====Uniformity Data=====
  +
 
*[https://docs.google.com/spreadsheets/d/1Mm_rsTm9xDQ50kZx6X6EZ5dTegUvinq0zFxRtE8B2R4/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2019]
  
*[https://docs.google.com/spreadsheets/d/1Mm_rsTm9xDQ50kZx6X6EZ5dTegUvinq0zFxRtE8B2R4/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2019]
 
*[https://docs.google.com/spreadsheets/d/1nzVeCKsmgL17zft6axQlixpvsEowJOG7qCnLQm_0XxE/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2020]
  
*[https://docs.google.com/spreadsheets/d/1nzVeCKsmgL17zft6axQlixpvsEowJOG7qCnLQm_0XxE/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2020]
   
−
== SiN 250C deposition (Unaxis VLR) ==
 +
==SiN 250C deposition (Unaxis VLR)==
−
==== Historical Data ====
 +
====Historical Data====
−
===== Thin-Film Properties =====
 +
=====Thin-Film Properties=====
 
This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure [[here]].
  
This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure [[here]].
  +
 
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=sharing SiN 250C 300nm Data-2020]
  
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=sharing SiN 250C 300nm Data-2020]
  +
⚫
===== Uniformity Data =====
  
  ⚫
=====Uniformity Data=====
  +
 
*[https://docs.google.com/spreadsheets/d/1YAx_Ix84xId8CAhDwZeFT7jLFUwg-BET9aBwg3DxUmQ/edit#gid=sharing Thickness Uniformity SiN 250C 300nm-2020]
  
*[https://docs.google.com/spreadsheets/d/1YAx_Ix84xId8CAhDwZeFT7jLFUwg-BET9aBwg3DxUmQ/edit#gid=sharing Thickness Uniformity SiN 250C 300nm-2020]
   
−
== SiN LS 250C Deposition (Unaxis VLR) ==
 +
==SiN LS 250C Deposition (Unaxis VLR)==
 
''Low Stress Silicon-Nitride''
  
''Low Stress Silicon-Nitride''
   
−
==== Historical Data ====
 +
====Historical Data====
 
''To Be Added''
  
''To Be Added''
   
−
===== Thin-Film Properties =====
 +
=====Thin-Film Properties=====
 
This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure [[here]].
  
This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure [[here]].
  +
 
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=sharing SiN LS 250C 300nm Data-2020]
  
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=sharing SiN LS 250C 300nm Data-2020]
  +
−
===== Uniformity Data =====
  
  ⚫
=====Uniformity Data=====
  +
 
*[https://docs.google.com/spreadsheets/d/1NDyxH1i9COM2XTryLqYPE9yOekgRslAJUO7o56iTOEQ/edit#gid=sharing Thickness Uniformity SiN LS 250C 300nm-2020]
  
*[https://docs.google.com/spreadsheets/d/1NDyxH1i9COM2XTryLqYPE9yOekgRslAJUO7o56iTOEQ/edit#gid=sharing Thickness Uniformity SiN LS 250C 300nm-2020]
   
−
== Cleaning Recipes (Unaxis VLR Dep) ==
 +
==Cleaning Recipes (Unaxis VLR Dep)==
 
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
  
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
  +
⚫
* SiNx etches at 20nm/min
  
−
* SiO2 etches at 40nm/min
 +
*SiNx etches at 20nm/min
  ⚫
*SiO2 etches at 40nm/min

Revision as of 11:17, 4 November 2021

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

Historical Particulate Data

SiN deposition (PECVD #1)

Historical Data

Thin-Film Properties
Uniformity Data

SiO2 deposition (PECVD #1)

Historical Data

Thin-Film Properties
Thick-Film Properties

Uniformity Data

Low-Stress SiN - LS-SiN (PECVD#1)

SiOxNy deposition (PECVD #1)

Cleaning Recipes (PECVD #1)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  2. Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

Standard Cleaning Recipe: "CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

PECVD 2 (Advanced Vacuum)

Historical Particulate Data

SiO2 deposition (PECVD #2)

Standard Recipe

Historical Data

Thin-Film Properties
Thin-Film Properties
Uniformity Data

SiN deposition (PECVD #2)

Standard Recipe

Historical Data

Thin-Film Properties
Uniformity Data

Low-Stress SiN deposition (PECVD #2)

Low-Stress SilIcon Nitride (< 100 MPa)

Standard Recipe

Historical Data

Thin-Film Properties
Uniformity Data

Amorphous-Si deposition (PECVD #2)

Cleaning Recipes (PECVD #2)

Cleaning Procedure (PECVD#2)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
  2. Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

Standard Clean Recipe: "STD CF4/O2 Clean recipe"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

Clean Times (PECVD#2)

Film Deposited Cleaning Time (Dry)
SiO2 1 min. clean for every 1 min. deposition
Si3N4 1 min. clean for every 7 min of deposition
If > 29min total dep time

(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes


ICP-PECVD (Unaxis VLR)

2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.

The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

Historical Particulate Data

Standard Recipes

SiO2 LDR 250C Deposition (Unaxis VLR)

Low-Deposition Rate SiO2

Historical Data

Thin-Film Properties

This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure here.

Uniformity Data

SiO2 HDR 250C Deposition (Unaxis VLR)

High-Deposition Rate SiO2

Historical Data

Thin-Film Properties

This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure here.

Uniformity Data

SiN 250C deposition (Unaxis VLR)

Historical Data

Thin-Film Properties

This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure here.

Uniformity Data

SiN LS 250C Deposition (Unaxis VLR)

Low Stress Silicon-Nitride

Historical Data

To Be Added

Thin-Film Properties

This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure here.

Uniformity Data

Cleaning Recipes (Unaxis VLR Dep)

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min
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