Revision as of 14:00, 26 September 2017

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO₂ deposition (PECVD #1)

OTHER recipes: LS SiN and SiO_xN_y deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiO₂ deposition (PECVD #2)

SiN deposition (PECVD #2)

LS SiN deposition (PECVD #2)

Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH₄)

50° (pinholes)	100° (pinholes)	250°
SiN Deposition Recipe (5W 50° High Stress) SiN Deposition Recipe (50W 50° Medium Stress) SiN Deposition Recipe (120W 50° Low Stress)	SiN Deposition Recipe (5W 100° High Stress) SiN Deposition Recipe (50W 100° Medium Stress) SiN Deposition Recipe (120W 100° Low Stress) Comparison Table SiNx (120W 100° Low Stress) Comparison Table SiNx (50W 100° Medium Stress) Comparison Table SiNx (5W 100° High Stress) SiNx SEM images (50W 100° Medium Stress) SiNx SEM images (5W 100° High Stress)	SiN Deposition Recipe (5W 250° High Stress) SiN Deposition Recipe (50W 250° Medium Stress) SiN Deposition Recipe (120W 250° Low Stress) Comparison Table SiNx (120W 250° Low Stress) Comparison Table SiNx (50W 250° Medium Stress) Comparison Table SiNx (5W 250° High Stress) Very-Low-Pin-Hole-Density SiNx Recipe(25W 300°)

SiN (2% SiH₄ - No-Ar)

50° (pinholes)	100° (pinholes)	250°
SiN Deposition Recipe - No Ar (5W 50° High Stress) Film Properties of High-stress SiN_x (No Ar, 5W, 50°) SiN Deposition Recipe - No Ar (50W 50° Medium Stress) Film Properties of Medium-stress SiN_x (No Ar, 50W, 50°) SiN Deposition Recipe - No Ar (120W 50° Low Stress) Film Properties of Low-stress SiN_x (No Ar, 120W, 50°)	SiN Deposition Recipe - No Ar (5W 100° High Stress) Film Properties of high-stress SiN_x (No Ar, 5W, 100°) SiN Deposition Recipe - No Ar (50W 100° Medium Stress) Film Properties of Medium-stress SiN_x (No Ar, 50W, 100°) SiN Deposition Recipe - No Ar (120W 100° Low Stress) Film Properties of Low-stress SiN_x (No Ar, 120W, 100°)	SiN Deposition Recipe - No Ar (5W 250° High Stress) Film Properties of High-stress SiN_x (No Ar, 5W, 250°) SiN Deposition Recipe - No Ar (50W 250° Medium Stress) Film Properties of Medium-stress SiN_x (No Ar, 50W, 250°) SiN Deposition Recipe - No Ar (120W 250° Low Stress) Film Properties of Low-stress SiN_x (No Ar, 120W, 250°)

SiN (2% SiH₄ - No-Ar - Extra N₂)

50° (pinholes)	100° (pinholes)	250°
SiN Deposition Recipe - No Ar Extra N₂ (120W 50° Low Stress)	SiN Deposition Recipe - No Ar Extra N₂ (120W 100° Low Stress)	SiN Deposition Recipe - No Ar Extra N₂ (120W 250° Low Stress)

SiN (100% SiH₄ )

50° (pinholes)	100° (pinholes)	250°
SiN Deposition Recipe (120W 50° Low Stress)	SiN Deposition Recipe (120W 100° Low Stress) SiN Comparison Table 120W-100(250)C	SiN Deposition Recipe (120W 250° Low Stress) SiN Comparison Table 120W, 100(250)C
SiN Deposition Recipe (50W 50° Medium Stress)	SiN Deposition Recipe (50W 100° Medium Stress) SiN Comparison Table 50W, 100(250)C SiN SEM sidewall coverage	SiN Deposition Recipe (50W 250° Medium Stress) SiN ComparisonTable 50W, 100(250)C

SiO₂ deposition (Unaxis VLR)

SiO₂ (2% SiH₄)

50°	100°	250°
SiO₂ Deposition Recipe (5W 50°)	SiO₂ Deposition Recipe (5W 100°) SiO₂ film Unaxis ICP vs PECVD I SiO₂ SEM pictures 100C	SiO₂ Deposition Recipe (5W 250°) SiO₂ film Unaxis ICP vs PECVD I

SiO₂ (2% SiH₄ - No Ar)

50°	100°	250°
SiO₂ Deposition Recipe - No Ar (50°) SiO₂ Film Properties-No Ar	SiO₂ Deposition Recipe - No Ar (100°) SiO₂ Film Properties-No Ar	SiO₂ Deposition Recipe - No Ar (250°) SiO₂ Film Properties-No Ar

SiO₂ (100% SiH₄ HDR)

50°	100°	250°
SiO₂ Deposition Recipe - HDR (50°)	SiO₂ Deposition Recipe - HDR (100°) SiO₂ Comparison Table - HDR (100°)	SiO₂ Deposition Recipe - HDR (250°) SiO₂ Comparison Table - HDR (250°)

SiO₂ (100% SiH₄ LDR)

50°	100°	250°
SiO₂ Deposition Recipe - LDR (50°)	SiO₂ Deposition Recipe - LDR (100°) SiO₂ Comparison Table - LDR (100°) SiO₂ SEM sidewall coverage	SiO₂ Deposition Recipe - LDR (250°) SiO₂ Comparison Table - LDR (250°)

Amorphous Si (100%SiH₄ Ar He)

90°	250°
a-Si Deposition Recipe - 90°	a-Si Deposition Recipe - 250° Thick, Defects-free a-Si Film on SiO₂/Si with a Lower Bias Power

@@ Line 41: / Line 41: @@
 =[[PECVD 2 (Advanced Vacuum)]]=
-*[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates (Gain4) in PECVD#2 2015 ]
+*[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates (Gain4) in PECVD#2 2015]
 *[https://docs.google.com/spreadsheets/d/1xpk9tJrE68NIJ_1yIym0xBxd4fnzHHBHdkhFehruO3E/edit#gid=sharing Particulates (Gain4) in PECVD#2 2016]
-*[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates (Gain4) in PECVD#2 2017 ]
+*[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates (Gain4) in PECVD#2 2017]
 *[https://docs.google.com/spreadsheets/d/1yPAPP24z3RcRRi-HqEp3GJN4JM8Ec8SFJwZ-OYGG2HU/edit#gid=sharing Particulates (Gain4 and Gain2) in PECVD#2 films 2017]
 == SiO<sub>2</sub> deposition (PECVD #2)  ==
@@ Line 87: / Line 87: @@
 ==SiN deposition (Unaxis VLR) ==
 === SiN (2% SiH<sub>4</sub>)   ===
-{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 |- bgcolor="#D0E7FF"
-!width=350 align=center|50° (pinholes)
+! width="350" align="center" |50° (pinholes)
-!width=350 align=center|100° (pinholes)
+! width="350" align="center" |100° (pinholes)
-!width=350 align=center|250°
+! width="350" align="center" |250°
-|-align=left
+|- align="left"
 |
 *[[Media:PECVD2-SiN-Recipe-5W-50C-High-Stress.pdf|SiN Deposition Recipe (5W 50° High Stress)]]
@@ Line 118: / Line 118: @@
 === SiN  (2% SiH<sub>4</sub> - No-Ar)  ===
-{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 |- bgcolor="#D0E7FF"
-!width=350 align=center|50° (pinholes)
+! width="350" align="center" |50° (pinholes)
-!width=350 align=center|100° (pinholes)
+! width="350" align="center" |100° (pinholes)
-!width=350 align=center|250°
+! width="350" align="center" |250°
-|-align=left
+|- align="left"
 |
 *[[Media:PECVD2-SiN-Recipe-NoAr-5W-50C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 50° High Stress)]]
@@ Line 149: / Line 149: @@
 === SiN  (2% SiH<sub>4</sub> - No-Ar - Extra N<sub>2</sub>)  ===
-{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 |- bgcolor="#D0E7FF"
-!width=350 align=center|50° (pinholes)
+! width="350" align="center" |50° (pinholes)
-!width=350 align=center|100° (pinholes)
+! width="350" align="center" |100° (pinholes)
-!width=350 align=center|250°
+! width="350" align="center" |250°
-|-align=left
+|- align="left"
 |
 *[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-50C-Low-Stress.pdf|SiN Deposition Recipe - No Ar Extra N<sub>2</sub> (120W 50° Low Stress)]]
@@ Line 165: / Line 165: @@
 === SiN  (100% SiH<sub>4</sub> ) ===
-{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 |- bgcolor="#D0E7FF"
-!width=350 align=center|50° (pinholes)
+! width="350" align="center" |50° (pinholes)
-!width=350 align=center|100° (pinholes)
+! width="350" align="center" |100° (pinholes)
-!width=350 align=center|250°
+! width="350" align="center" |250°
-|-align=left
+|- align="left"
 |
 *[[Media:PECVD2-SiN-Recipe-Low stress SiNx-100%SiH4-120W-50C.pdf|SiN Deposition Recipe (120W 50° Low Stress)]]
@@ Line 178: / Line 178: @@
 |
 *[[Media:PECVD2-SiN-Recipe-Low stress SiNx-100% SiH4-120W-250C.pdf|SiN Deposition Recipe (120W 250° Low Stress)]]
-*[[Media:PECVD2-SiN-Table-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN Comparison Table 120W, 100(250)C ]]
+*[[Media:PECVD2-SiN-Table-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN Comparison Table 120W, 100(250)C]]
-|- align=left
+|- align="left"
 |
 *[[Media:PECVD2-SiN-Recipe-Medium stress SiNx-100%SiH4-120W-50C.pdf|SiN Deposition Recipe (50W 50° Medium Stress)]]
@@ Line 194: / Line 194: @@
 ==SiO<sub>2</sub> deposition (Unaxis VLR) ==
 === SiO<sub>2</sub> (2% SiH<sub>4</sub>)   ===
-{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 |- bgcolor="#D0E7FF"
-!width=350 align=center|50°
+! width="350" align="center" |50°
-!width=350 align=center|100°
+! width="350" align="center" |100°
-!width=350 align=center|250°
+! width="350" align="center" |250°
-|-align=left
+|- align="left"
 |
 *[[Media:PECVD2-SiO2Recipe-5W-50C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 50°)]]
@@ Line 213: / Line 213: @@
 === SiO<sub>2</sub> (2% SiH<sub>4</sub> - No Ar)   ===
-{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 |- bgcolor="#D0E7FF"
-!width=350 align=center|50°
+! width="350" align="center" |50°
-!width=350 align=center|100°
+! width="350" align="center" |100°
-!width=350 align=center|250°
+! width="350" align="center" |250°
-|-align=left
+|- align="left"
 |
 *[[Media:PECVD2-SiO2-Recipe-NoAr-50C.pdf|SiO<sub>2</sub> Deposition Recipe - No Ar (50°)]]
@@ Line 232: / Line 232: @@
 === SiO<sub>2</sub> (100% SiH<sub>4</sub> HDR)   ===
-{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 |- bgcolor="#D0E7FF"
-!width=350 align=center|50°
+! width="350" align="center" |50°
-!width=350 align=center|100°
+! width="350" align="center" |100°
-!width=350 align=center|250°
+! width="350" align="center" |250°
-|-align=left
+|- align="left"
 |
 *[[Media:SiO2 100% SiH4 HDR 50C.pdf|SiO<sub>2</sub> Deposition Recipe - HDR (50°)]]
@@ Line 250: / Line 250: @@
 === SiO<sub>2</sub> (100% SiH<sub>4</sub> LDR)   ===
-{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 |- bgcolor="#D0E7FF"
-!width=350 align=center|50°
+! width="350" align="center" |50°
-!width=350 align=center|100°
+! width="350" align="center" |100°
-!width=350 align=center|250°
+! width="350" align="center" |250°
-|-align=left
+|- align="left"
 |
 *[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-50C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (50°)]]
@@ Line 269: / Line 269: @@
 === Amorphous Si (100%SiH<sub>4</sub> Ar He)   ===
-{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 |- bgcolor="#D0E7FF"
-!width=350 align=center|90°
+! width="350" align="center" |90°
-!width=350 align=center|250°
+! width="350" align="center" |250°
-|-align=left
+|- align="left"
 |
 *[[Media:02-ICP-PECVD-a-Si_Film-90C.pdf|a-Si Deposition Recipe - 90°]]

Difference between revisions of "PECVD Recipes"

Revision as of 14:00, 26 September 2017

Contents

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO₂ deposition (PECVD #1)

OTHER recipes: LS SiN and SiO_xN_y deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiO₂ deposition (PECVD #2)

SiN deposition (PECVD #2)

LS SiN deposition (PECVD #2)

Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH₄)

SiN (2% SiH₄ - No-Ar)

SiN (2% SiH₄ - No-Ar - Extra N₂)

SiN (100% SiH₄ )

SiO₂ deposition (Unaxis VLR)

SiO₂ (2% SiH₄)

SiO₂ (2% SiH₄ - No Ar)

SiO₂ (100% SiH₄ HDR)

SiO₂ (100% SiH₄ LDR)

Amorphous Si (100%SiH₄ Ar He)

Navigation menu

Search

Difference between revisions of "PECVD Recipes"

Revision as of 14:00, 26 September 2017

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

OTHER recipes: LS SiN and SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiO2 deposition (PECVD #2)

SiN deposition (PECVD #2)

LS SiN deposition (PECVD #2)

Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

SiN (2% SiH4 - No-Ar)

SiN (2% SiH4 - No-Ar - Extra N2)

SiN (100% SiH4 )

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

SiO2 (2% SiH4 - No Ar)

SiO2 (100% SiH4 HDR)

SiO2 (100% SiH4 LDR)

Amorphous Si (100%SiH4 Ar He)

Navigation menu

Search

SiO₂ deposition (PECVD #1)

OTHER recipes: LS SiN and SiO_xN_y deposition (PECVD #1)

SiO₂ deposition (PECVD #2)

SiN (2% SiH₄)

SiN (2% SiH₄ - No-Ar)

SiN (2% SiH₄ - No-Ar - Extra N₂)

SiN (100% SiH₄ )

SiO₂ deposition (Unaxis VLR)

SiO₂ (2% SiH₄)

SiO₂ (2% SiH₄ - No Ar)

SiO₂ (100% SiH₄ HDR)

SiO₂ (100% SiH₄ LDR)

Amorphous Si (100%SiH₄ Ar He)