Difference between revisions of "PECVD Recipes"

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== Amorphous-Si deposition (PECVD #2)  ==
 
== Amorphous-Si deposition (PECVD #2)  ==
 
*[[media:03-Amorphous-Si-PECVD-2.pdf|Amorphous Si Deposition Recipe]]
 
*[[media:03-Amorphous-Si-PECVD-2.pdf|Amorphous Si Deposition Recipe]]
*[[media:|Amorphous Si Films and Their Stress]]
+
*[[media:ASi_deposition_and_film_stress_using_AV_dep_tool.pdf|Amorphous Si Films and Their Stress]]
  
 
= [[ICP-PECVD (Unaxis VLR)]] =
 
= [[ICP-PECVD (Unaxis VLR)]] =

Revision as of 13:40, 28 July 2016

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

OTHER recipes: LS SiN and SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiO2 deposition (PECVD #2)

SiN deposition (PECVD #2)

LS SiN deposition (PECVD #2)

Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° (pinholes) 100° (pinholes) 250°

SiN (2% SiH4 - No-Ar)

50° (pinholes) 100° (pinholes) 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° (pinholes) 100° (pinholes) 250°

SiN (100% SiH4 )

50° (pinholes) 100° (pinholes) 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°

Amorphous Si (100%SiH4 Ar He)

90° 250°