Difference between revisions of "PECVD Recipes"

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*[[media:New AdvPECVD-LS Nitride2 300C standard recipe LS Nitride2 standard recipe.pdf|LS Nitride2 Standard Recipe 2014-5/9/2018]]
 
*[[media:New AdvPECVD-LS Nitride2 300C standard recipe LS Nitride2 standard recipe.pdf|LS Nitride2 Standard Recipe 2014-5/9/2018]]
*[[media:STD LSNitride 5/9/18.pdf|STD LSNitride2 5/9/2018]]
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*[[media:STD LSNitride2 12-14-18 recipe.pdf|STD LSNitride2 12/14/2018]]
 
*[[media:STD LSNitride2 12-14-18 recipe.pdf|STD LSNitride2 12/14/2018]]
  

Revision as of 13:49, 2 January 2019

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

Note: Software upgrade performed on 2018-10-10. Note any changes in film.


SiN deposition (PECVD #1)


SiO2 deposition (PECVD #1)


OTHER recipes: Low-Stress (LS) SiN and SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiO2 deposition (PECVD #2)


SiN deposition (PECVD #2)


Low-Stress SiN deposition (PECVD #2)

Low-Stress SilIcon Nitride (< 100 MPa)


Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° (pinholes) 100° (pinholes) 250°

SiN (2% SiH4 - No-Ar)

50° (pinholes) 100° (pinholes) 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° (pinholes) 100° (pinholes) 250°

SiN (100% SiH4 )

50° (pinholes) 100° (pinholes) 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°

Amorphous Si (100%SiH4 Ar He)

90° 250°