Difference between revisions of "PECVD Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(SiO2 dat for 300nm film 2017)
Line 31: Line 31:
 
*[https://docs.google.com/spreadsheets/d/1F2pfsVnbUgaE9tsm8HZMlY6cyt-nhui0IpvGc6udhDU/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2016]
 
*[https://docs.google.com/spreadsheets/d/1F2pfsVnbUgaE9tsm8HZMlY6cyt-nhui0IpvGc6udhDU/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2016]
 
*[https://docs.google.com/spreadsheets/d/1MblK5Zr5Skfw0s9Hdhqr_cCwN-nCgM-ofZnsAyvVRq8/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2017]
 
*[https://docs.google.com/spreadsheets/d/1MblK5Zr5Skfw0s9Hdhqr_cCwN-nCgM-ofZnsAyvVRq8/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2017]
*[https://docs.google.com/spreadsheets/d/1UlyvPcXUBQ5R2JwjKOjELvtCJaTElVhJHfzgjyaRd2A/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2017]
+
*[https://docs.google.com/spreadsheets/d/15SocIqWQvBKSvT5oCWoZAURLaaqb9KosxCN2rueZQN8/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2017]
 
*[https://docs.google.com/spreadsheets/d/1DdjIRGsfJ7WCrxQoGpmzkjLGJhpBTFNYLFmmHcNjAjk/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2018]
 
*[https://docs.google.com/spreadsheets/d/1DdjIRGsfJ7WCrxQoGpmzkjLGJhpBTFNYLFmmHcNjAjk/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2018]
   
Line 89: Line 89:
 
*[https://docs.google.com/spreadsheets/d/1WJcYzHUjLrWpys_i-Q96FN_lBDBufpXZKZVEX_gri_Q/edit#gid=sharing Nitride2 Thickness Uniformity 2017]
 
*[https://docs.google.com/spreadsheets/d/1WJcYzHUjLrWpys_i-Q96FN_lBDBufpXZKZVEX_gri_Q/edit#gid=sharing Nitride2 Thickness Uniformity 2017]
 
*[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2018]
 
*[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2018]
*[[media:SiNx_Films_by_PECVD2.pdf|SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate]]
+
*[[media:SiNx Films by PECVD2.pdf|SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate]]
   
 
==Low-Stress SiN deposition (PECVD #2) ==
 
==Low-Stress SiN deposition (PECVD #2) ==
Line 109: Line 109:
 
== Amorphous-Si deposition (PECVD #2) ==
 
== Amorphous-Si deposition (PECVD #2) ==
 
*[[media:03-Amorphous-Si-PECVD-2.pdf|Amorphous Si Deposition Recipe]]
 
*[[media:03-Amorphous-Si-PECVD-2.pdf|Amorphous Si Deposition Recipe]]
*[[media:ASi_deposition_and_film_stress_using_AV_dep_tool.pdf|Amorphous Si Films and Their Stress]]
+
*[[media:ASi deposition and film stress using AV dep tool.pdf|Amorphous Si Films and Their Stress]]
   
 
= [[ICP-PECVD (Unaxis VLR)]] =
 
= [[ICP-PECVD (Unaxis VLR)]] =
Line 140: Line 140:
 
*[[Media:PECVD2-SiNx-medium-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (50W 250° Medium Stress)]]
 
*[[Media:PECVD2-SiNx-medium-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (50W 250° Medium Stress)]]
 
*[[Media:PECVD2-SiNx -h.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (5W 250° High Stress)]]
 
*[[Media:PECVD2-SiNx -h.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (5W 250° High Stress)]]
*[[Media:28-Very-low-pin-hole-density_SiNx_film_at_300_C.pdf|Very-Low-Pin-Hole-Density SiNx Recipe(25W 300°)]]
+
*[[Media:28-Very-low-pin-hole-density SiNx film at 300 C.pdf|Very-Low-Pin-Hole-Density SiNx Recipe(25W 300°)]]
 
|-
 
|-
 
|}
 
|}
Line 153: Line 153:
 
|
 
|
 
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-50C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 50° High Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-50C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 50° High Stress)]]
*[[Media:41-High-stress_SiNx_at_50_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of High-stress SiN<sub>x</sub> (No Ar, 5W, 50°)]]
+
*[[Media:41-High-stress SiNx at 50 C using Unaxis ICP deposition tool.pdf|Film Properties of High-stress SiN<sub>x</sub> (No Ar, 5W, 50°)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-50C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 50° Medium Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-50C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 50° Medium Stress)]]
*[[Media:36-Medium-stress_SiNx_using_Unaxis_ICP_deposition_tool-a.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 50°)]]
+
*[[Media:36-Medium-stress SiNx using Unaxis ICP deposition tool-a.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 50°)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-50C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 50° Low Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-50C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 50° Low Stress)]]
*[[Media:40-Low-stress_SiNx_at_50_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 50°)]]
+
*[[Media:40-Low-stress SiNx at 50 C using Unaxis ICP deposition tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 50°)]]
 
|
 
|
 
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-100C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 100° High Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-100C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 100° High Stress)]]
*[[Media:38-High-stress_SiNx_at_100_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of high-stress SiN<sub>x</sub> (No Ar, 5W, 100°)]]
+
*[[Media:38-High-stress SiNx at 100 C using Unaxis ICP deposition tool.pdf|Film Properties of high-stress SiN<sub>x</sub> (No Ar, 5W, 100°)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-100C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 100° Medium Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-100C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 100° Medium Stress)]]
*[[Media:39-Medium-stress_SiNx_at_100C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 100°)]]
+
*[[Media:39-Medium-stress SiNx at 100C using Unaxis ICP deposition tool.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 100°)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-100C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 100° Low Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-100C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 100° Low Stress)]]
*[[Media:37-Low-stress_SiNx_at_100_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 100°)]]
+
*[[Media:37-Low-stress SiNx at 100 C using Unaxis ICP deposition tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 100°)]]
 
|
 
|
 
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-250C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 250° High Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-250C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 250° High Stress)]]
*[[Media:34-High-stress_SiNx_at_250_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of High-stress SiN<sub>x</sub> (No Ar, 5W, 250°)]]
+
*[[Media:34-High-stress SiNx at 250 C using Unaxis ICP deposition tool.pdf|Film Properties of High-stress SiN<sub>x</sub> (No Ar, 5W, 250°)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 250° Medium Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 250° Medium Stress)]]
*[[Media:36-Medium-stress_SiNx_using_Unaxis_ICP_deposition_tool-a.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 250°)]]
+
*[[Media:36-Medium-stress SiNx using Unaxis ICP deposition tool-a.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 250°)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-250C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 250° Low Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-250C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 250° Low Stress)]]
*[[Media:35-Low-stress_SiNx_at_250_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 250°)]]
+
*[[Media:35-Low-stress SiNx at 250 C using Unaxis ICP deposition tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 250°)]]
 
|-
 
|-
 
|}
 
|}
Line 302: Line 302:
 
|- align="left"
 
|- align="left"
 
|
 
|
*[[Media:02-ICP-PECVD-a-Si_Film-90C.pdf|a-Si Deposition Recipe - 90°]]
+
*[[Media:02-ICP-PECVD-a-Si Film-90C.pdf|a-Si Deposition Recipe - 90°]]
 
|
 
|
*[[Media:01-ICP-PECVD-a-Si-Deposition_Recipe-250C.pdf|a-Si Deposition Recipe - 250°]]
+
*[[Media:01-ICP-PECVD-a-Si-Deposition Recipe-250C.pdf|a-Si Deposition Recipe - 250°]]
*[[Media:Amorphous_Silicon_Film_Deposition_using_12.5W_bias_on_SiO2-Si.pdf|Thick, Defects-free a-Si Film on SiO<sub>2</sub>/Si with a Lower Bias Power]]
+
*[[Media:Amorphous Silicon Film Deposition using 12.5W bias on SiO2-Si.pdf|Thick, Defects-free a-Si Film on SiO<sub>2</sub>/Si with a Lower Bias Power]]
 
|-
 
|-
 
|}
 
|}

Revision as of 07:34, 27 April 2018

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)


SiN deposition (PECVD #1)


SiO2 deposition (PECVD #1)


OTHER recipes: Low-Stress (LS) SiN and SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiO2 deposition (PECVD #2)


SiN deposition (PECVD #2)


Low-Stress SiN deposition (PECVD #2)

Low-Stress SilIcon Nitride (< 100 MPa)


Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° (pinholes) 100° (pinholes) 250°

SiN (2% SiH4 - No-Ar)

50° (pinholes) 100° (pinholes) 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° (pinholes) 100° (pinholes) 250°

SiN (100% SiH4 )

50° (pinholes) 100° (pinholes) 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°

Amorphous Si (100%SiH4 Ar He)

90° 250°