Difference between revisions of "PECVD Recipes"

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{{recipes|Vacuum Deposition}}
 
{{recipes|Vacuum Deposition}}
 +
 
=[[PECVD 1 (PlasmaTherm 790)]]=
 
=[[PECVD 1 (PlasmaTherm 790)]]=
==== Historical Particulate Data ====
 
  
*[https://docs.google.com/spreadsheets/d/1a0XrY6HuJ6L9niThZYI-u4XH69Hnbe3jkm1qKmrR8Rg/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2015]
+
===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===
*[https://docs.google.com/spreadsheets/d/1ZfkspbCQZmdThC8qB4XyjsyPAzrMF1QbHSMFmH6xSo4/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2016]
 
*[https://docs.google.com/spreadsheets/d/1YNiof68Veeh08s_NtG5aCWUXW7GWDDU00HAimV_l8_g/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2017]
 
*[https://docs.google.com/spreadsheets/d/1VN551M2oXGWX306HDLQXvZIp3kgxEvWffQqMqnc8ISk/edit#gid=sharing Particulates in PECVD#1 films 2017]
 
*[https://docs.google.com/spreadsheets/d/11c0gQHnattIjVO95aBqiL-zL4DInRFihV-YB54xLT40/edit#gid=sharing Particulates in PECVD#1 films 2018]
 
*[https://docs.google.com/spreadsheets/d/1ct-SSCRxf81W0jupCWzh81n0DBwPv6mwKFMzuWu_0TI/edit#gid=sharing Particulates in PECVD#1 films 2019]
 
*[https://docs.google.com/spreadsheets/d/1yks0OgH8rpbYjin_Qr8vpPg8jBiZQRs_PKfyfo-Rqg0/edit#gid=sharing Particulates in PECVD#1 films 2020]
 
  
==SiN deposition (PECVD #1)==
+
==SiO<sub>2</sub> deposition (PECVD #1)==
  
*[//www.nanotech.ucsb.edu/wiki/images/3/32/New_PECVD1-SiO2-standard_recipe_2014_SiO2_standard_recipe.pdf SiN Standard Recipe]
 
*[https://docs.google.com/spreadsheets/d/10ccfgCf5O0JM6L9J5XDz-gWVQz9P24VU/edit#gid= Table Si3N4 recipe]
 
==== Historical Data ====
 
  
===== Thin-Film Properties =====
+
*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN 100nm Data 2014]
+
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1phx1WficlUEg0xSahaAq4zrRk6m9Eb0ausO8wcAmXqs/edit#gid=sharing SiN 100nm Data 2015]
+
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1503619544 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier
*[https://docs.google.com/spreadsheets/d/1VNSNTqnbE4SFk0HyhBAy3GJzi0jRQEs8cgk1v2_Uam8/edit#gid=sharing SiN 100nm Data 2016]
 
*[https://docs.google.com/spreadsheets/d/1TG1X2wpl2fWaHEtAHtpZFBVSCk1BQeGJQ8LA2M2qBJ0/edit#gid=sharing SiN 100nm Data 2017]
 
*[https://docs.google.com/spreadsheets/d/1UlyvPcXUBQ5R2JwjKOjELvtCJaTElVhJHfzgjyaRd2A/edit#gid=sharing SiN 300nm Data 2017]
 
*[https://docs.google.com/spreadsheets/d/1pAoTCaNSf0uZMyiQ2qKFd0s_e4e53P9Z1jUwtmTnlLk/edit#gid=sharing SiN 300nm Data 2018]
 
*[https://docs.google.com/spreadsheets/d/1Pnw8eEaQ0rGblRYl6LeIm6wrh1hgeyjnHEbA4BzV8JM/edit#gid=sharing SiN 300nm Data 2019]
 
*[https://docs.google.com/spreadsheets/d/1sx1_jvZnoQKY__8pl3nxjIcLrBHaCMQRyKyymDneLwc/edit#gid=sharing SiN 300nm Data 2020]
 
  
===== Uniformity Data =====
+
==SiN deposition (PECVD #1)==
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 100 nm Thickness uniformity 2014]
+
*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1-pET1Eojooso5UHk90W-5uYByDDdrCyRnggqewxTmVg/edit#gid=sharing SiN 100 nm Thickness uniformity 2015]
+
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1V_-KzsdR-2tSnJGtUdQWokmnNIY949t0vdQOp7RfCgc/edit#gid=sharing SiN 100 nm Thickness uniformity 2016]
+
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=604790654 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier
*[https://docs.google.com/spreadsheets/d/1tM-a4VBEqpxr2G8PGGLTbsR6BQBmvqXNRBw0mikAUS0/edit#gid=sharing SiN 100 nm Thickness uniformity 2017]
 
*[https://docs.google.com/spreadsheets/d/1Z83RCH5cAUfViO6vv6hAatcLVWZ95ex4nDdfffm9I7s/edit#gid=sharing SiN 300nm Thickness uniformity 2017]
 
*[https://docs.google.com/spreadsheets/d/1b4EQZdRtVbqNwGBrItoG5-tz6RIzlsvBiCFR6ZXfylw/edit#gid=sharing SiN 300nm Thickness uniformity 2018]
 
*[https://docs.google.com/spreadsheets/d/1-OiaH8frAzJzHKfbYTJP808ddzk1Wsv_CixDzG-sSfo/edit#gid=sharing SiN 300nm Thickness uniformity 2019]
 
*[https://docs.google.com/spreadsheets/d/1eP6U2WJetu2wDB6wemkMPFG0JYx33I3Z3liihwae8Oo/edit#gid=sharing SiN 300nm Thickness uniformity 2020]
 
  
==SiO<sub>2</sub> deposition (PECVD #1)==
+
==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)==
  
*[//www.nanotech.ucsb.edu/wiki/images/8/87/New_PECVD1-SiN-standard_recipe_2014_SiN_standard_recipe.pdf SiO<sub>2</sub> Standard Recipe]
+
*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/10ccfgCf5O0JM6L9J5XDz-gWVQz9P24VU/edit#gid= Table SiO2 recipe]
+
*[[To Be Added|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]] ''- To Be Added''
 +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=934830479 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier
  
==== Historical Data ====
+
==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)==
  
===== Thin-Film Properties =====
+
*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]
 
+
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] - ''Rate, Index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Data 2014]
+
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]
*[https://docs.google.com/spreadsheets/d/1JWNUcH8l90xif-0BhYKJee9nXxE4hnvvp6N2NtZLYXY/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2015]
 
*[https://docs.google.com/spreadsheets/d/1F2pfsVnbUgaE9tsm8HZMlY6cyt-nhui0IpvGc6udhDU/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2016]
 
*[https://docs.google.com/spreadsheets/d/1MblK5Zr5Skfw0s9Hdhqr_cCwN-nCgM-ofZnsAyvVRq8/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2017]
 
*[https://docs.google.com/spreadsheets/d/15SocIqWQvBKSvT5oCWoZAURLaaqb9KosxCN2rueZQN8/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2017]
 
*[https://docs.google.com/spreadsheets/d/1DdjIRGsfJ7WCrxQoGpmzkjLGJhpBTFNYLFmmHcNjAjk/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2018]
 
*[https://docs.google.com/spreadsheets/d/1QbhukSuVNueT067IVEpweSlD4B7GQecf-tfQFQeV6Xs/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2019]
 
*[https://docs.google.com/spreadsheets/d/1oVx2Fx7kZA_h4J1L0SMnT4PGWIuuJu5vAfN1JmPzlwc/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2020]
 
 
 
==== Uniformity Data ====
 
 
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDQ3VEtZQVRpdVdlbGtIZHpTNmFzNmc&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2014]
 
*[https://docs.google.com/spreadsheets/d/1NQy-ADou6f2NBU-9jZG8KME1lOz0X5mh6HZV9_jPGes/edit#gid=sharing SiO<sub>2</sub> 100 nm Thickness uniformity 2015]
 
*[https://docs.google.com/spreadsheets/d/1WUCm_dWpxKTjfFf1rNfLuxvwMxsyCYON_OZ3gb50L_s/edit#gid=sharing SiO<sub>2</sub> 100 nmThickness uniformity 2016]
 
*[https://docs.google.com/spreadsheets/d/1dpC_AkPD-etIH6fVuQqLfd4UMNQCEtcqhvmBpwbEncE/edit#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2017]
 
*[https://docs.google.com/spreadsheets/d/1Fa8mZIBIeJwvCwUbJ-28VcvVYj8rshhuDuXsYxA-cD8/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2017]
 
*[https://docs.google.com/spreadsheets/d/1YB_9USpuXGpIdSW2gNsptu5nSrLWAGsYu0SWoYEy0aQ/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2018]
 
*[https://docs.google.com/spreadsheets/d/1FatUAEegWuDRzVa47L1_cqgRs0AZ_Fao9jpwz5sfln0/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2019]
 
*[https://docs.google.com/spreadsheets/d/1cUIEs2_RYK741CAaVVlfzqTEOqlPHQ9MnhgJ6fdTWMc/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2020]
 
  
== Low-Stress SiN - LS-SiN (PECVD#1) ==
+
==Standard Cleaning Procedure (PECVD #1)==
 +
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
  
*[//www.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf LS SiN Standard Recipe]
+
#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
*[https://docs.google.com/spreadsheets/d/1Joz0az9TGZWQc4CiMQJZzLBbNFbx_hH2Oc0B4NNJmYk/edit#gid=sharing LS SiN Data  2014]
+
#Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
*[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=sharing LS SiN 1000A Thickness uniformity 2014]
+
#
  
== SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1) ==
+
{| class="wikitable"
 +
|+Table of Cleaning Times
 +
!Film Dep'd
 +
!Cleaning Time
 +
|-
 +
|SiO<sub>2</sub>
 +
|TBD
 +
|-
 +
|Si<sub>3</sub>N<sub>4</sub>
 +
|TBD
 +
|-
 +
|SiOxNy
 +
|Same as XYZ
 +
|}
  
*[//www.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]
+
#
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]
 
  
== Cleaning Recipes (PECVD #1) ==
+
===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
  To Be Added...
+
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.
  
 
=[[PECVD 2 (Advanced Vacuum)]]=
 
=[[PECVD 2 (Advanced Vacuum)]]=
  
==== Historical Particulate Data ====
+
===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===
 
 
*[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates (Gain4) in PECVD#2 2015]
 
*[https://docs.google.com/spreadsheets/d/1xpk9tJrE68NIJ_1yIym0xBxd4fnzHHBHdkhFehruO3E/edit#gid=sharing Particulates (Gain4) in PECVD#2 2016]
 
*[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates (Gain4) in PECVD#2 2017]
 
 
 
*[https://docs.google.com/spreadsheets/d/1yPAPP24z3RcRRi-HqEp3GJN4JM8Ec8SFJwZ-OYGG2HU/edit#gid=sharing Particulates in PECVD#2 films 2017]
 
*[https://docs.google.com/spreadsheets/d/1aU6fTyQ5MlGD4uCa9gepG5rLJzW3wlkOWSKEl_w_Ye4/edit#gid=sharing Particulates in PECVD#2 films 2018]
 
*[https://docs.google.com/spreadsheets/d/1OPZXe8g3H0wywIrPFel3nSZ5iyPs2mVIYUSVKfTtMDg/edit#gid=sharing Particulates in PECVD#2 films 2019]
 
*[https://docs.google.com/spreadsheets/d/1Y9lomsf7bDojeXoAsEG7xvypx_sw_atpmPwB9xtK1Zk/edit#gid=sharing Particulates in PECVD#2 films 2020]
 
  
 
==SiO<sub>2</sub> deposition (PECVD #2)==
 
==SiO<sub>2</sub> deposition (PECVD #2)==
  
==== Standard Recipe ====
+
*[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''STD SiO2''"
 
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[//www.nanotech.ucsb.edu/wiki/images/8/8d/New_Adv_PECVD_OXIDE_300C_standard_recipe_OXIDE_Standard_Recipe.pdf Oxide Standard Recipe 2014-5/9/18]
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=2024333220 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021
*[//www.nanotech.ucsb.edu/wiki/images/b/b0/STD_SiO2_5-9-18.pdf STD SiO2 5/9/18]
 
*[https://docs.google.com/spreadsheets/d/1vgWUtpCWC_TFffU9kuR3wqvjryiNA5OV/edit#gid= Table STD Oxide]
 
 
 
==== Historical Data ====
 
 
 
===== Thin-Film Properties =====
 
 
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data 2014]
 
*[https://docs.google.com/spreadsheets/d/1d5boeJRWWgMqvQe6nVM7m8s3KAcS4Yp2L5CEU9svkX4/edit#gid=sharing Oxide Data 2015]
 
*[https://docs.google.com/spreadsheets/d/1XQRcTJdw9AIMPAUsH0n9Ic9Fe1_xGDSvAxD4gVc9FBw/edit#gid=sharing Oxide data 2016]
 
*[https://docs.google.com/spreadsheets/d/1vcaHwraMGNHuRxgWwGp78EJf4T3Jk182wxoCz_neuck/edit#gid=sharing Oxide Data 2017]
 
*[https://docs.google.com/spreadsheets/d/1VI-sUmaqois0NsCvf2kQmPfRRa03MjBzl779hmmLtP4/edit#gid=sharing Oxide Data 2018]
 
*[https://docs.google.com/spreadsheets/d/1oWnQ3D6oknKWU2bohvSrN85rlEZgQN3YP_ZJ4i8u7do/edit#gid=sharing Oxide Data 2019]
 
*[https://docs.google.com/spreadsheets/d/1h5Zrw2hSiMCJrqEsoaRh1lnUVUgKZ67pk-AjmikfrVc/edit#gid=sharing Oxide Data 2020]
 
 
 
===== Uniformity Data =====
 
 
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness Uniformity 2014]
 
*[https://docs.google.com/spreadsheets/d/16pZHcGwesXB1mMPwntOudBIlPvRh6A6DI37DEwyYfPw/edit#gid=sharing Oxide Thickness Uniformity 2015]
 
*[https://docs.google.com/spreadsheets/d/10OEuANVNmHqWvx-92zibechIrHK5kgqSK4B_O_O3-YI/edit#gid=sharing Oxide Thickness Uniformity 2016]
 
*[https://docs.google.com/spreadsheets/d/19JjJYdFNFzO685Hp9hODVRFAYF5bP3IEYGTRGQjqLN4/edit#gid=sharing Oxide Thickness Uniformity 2017]
 
*[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2018]
 
*[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2019]
 
*[https://docs.google.com/spreadsheets/d/1Dx2sNMB9VQQil85SKfnZZ_zqUt1pESfgZeXt3Z3HXJc/edit#gid=sharing Oxide Thickness Uniformity 2020]
 
  
 
==SiN deposition (PECVD #2)==
 
==SiN deposition (PECVD #2)==
  
==== Standard Recipe ====
+
*[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''Nitride2''"
 
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[//www.nanotech.ucsb.edu/wiki/images/4/4c/SiNx_Films_by_PECVD2.pdf SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate]
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1153442266 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021
*[//www.nanotech.ucsb.edu/wiki/images/e/e1/New_Adv_PECVD-Nitride2_300C_standard_recipe_Nitride2_Standard_Recipe.pdf Nitride2 Standard Recipe 2014-5/9/2018]
 
*[//www.nanotech.ucsb.edu/wiki/images/5/52/STD_Nitride_5-9-18_Dep.recipe.pdf STD Nitride2 Standard Recipe 5/9/2018]
 
*[https://docs.google.com/spreadsheets/d/1Oegk0aFFCuz9wQHDN2Kdz0NFo9_wuEVW/edit?dls=true#gid= Table STD Nitride2]
 
 
 
==== Historical Data ====
 
 
 
===== Thin-Film Properties =====
 
 
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014]
 
*[https://docs.google.com/spreadsheets/d/1SkYqOwgjUyMaFBPhuTjMvBTXu0KdQFNmITryF_OVi8o/edit#gid=sharing Nitride2 Data 2015]
 
*[https://docs.google.com/spreadsheets/d/1HJszgZyEZR9ZsiJpQM6pdsoQ6pWwI6brXasdmfDRoBQ/edit#gid=sharing Nitride2 Data 2016]
 
*[https://docs.google.com/spreadsheets/d/1f3JBEnr7lf0yIMlzlOYKv_bXlIDyXt8vec_rSVJIoOk/edit#gid=sharing Nitride2 Data 2017]
 
*[https://docs.google.com/spreadsheets/d/1OO0ewGSqYSzL3lj8fXkgckTkBGQRliD6sBc02IW7wZY/edit#gid=sharing Nitride2 Data 2018]
 
*[https://docs.google.com/spreadsheets/d/1Zi8CRspd3LTDdNRRCneE0--bVohWvZbV_kSHo04s0oI/edit#gid=sharing Nitride2 Data 2019]
 
*[https://docs.google.com/spreadsheets/d/1T0Zk2geshX9h-Cf8I1BAcQqWFhCqorJrrOnDH4hz7GY/edit#gid=sharing Nitride2 Data 2020]
 
 
 
===== Uniformity Data =====
 
 
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness Uniformity 2014]
 
*[https://docs.google.com/spreadsheets/d/14_dYQu3z31fF_oxsUUX8BmDucgv6B07xB3_zqP0HmvM/edit#gid=sharing Nitride2 Thickness Uniformity 2015]
 
*[https://docs.google.com/spreadsheets/d/1qBHs7uALM2OdE-yXOq4uZk6aUQEjZRjG1C6RcMEf0sk/edit#gid=sharing Nitride2 Thickness Uniformity 2016]
 
*[https://docs.google.com/spreadsheets/d/1WJcYzHUjLrWpys_i-Q96FN_lBDBufpXZKZVEX_gri_Q/edit#gid=sharing Nitride2 Thickness Uniformity 2017]
 
*[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2018]
 
*[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2019]
 
*[https://docs.google.com/spreadsheets/d/16nlLjk_kctE6YKQBJbq0SotP80tybdSdJ0hvxbeohE0/edit#gid=sharing Nitride2 Thickness Uniformity 2020]
 
  
 
==Low-Stress SiN deposition (PECVD #2)==
 
==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress SilIcon Nitride (< 100 MPa)''
+
''Low-Stress Silicon Nitride, Si<sub>3</sub>N<sub>4</sub> (< ±100 MPa)''
  
==== Standard Recipe ====
+
*[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''LSNitride2''
  
*[//www.nanotech.ucsb.edu/wiki/images/9/98/STD_LSNitride2_12-14-18_recipe.pdf STD LSNitride2 12/14/2018]
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1qXCH1phgvk3-5_5FUqeQaGPERhyS5dn4/edit#gid= Table STD LS Nitride2]
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Process Control Data]
*''Old Versions:''
+
*[[To Be Added|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
**[//www.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]
+
*:''Old Versions of the recipe:''
**[//www.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]
+
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
 +
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''
  
==== Historical Data ====
+
==Amorphous-Si deposition (PECVD #2)==
 
 
===== Thin-Film Properties =====
 
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data 2014]
+
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]
*[https://docs.google.com/spreadsheets/d/16Q6BrPoNiFP0elVoSGwXRfQdHXzAXOgiyqKmEw-4kII/edit#gid=sharing LS Nitride2 Data 2015]
+
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress]
*[https://docs.google.com/spreadsheets/d/1GZ58eFzD-T8DJ2Nsaj74u6cvawzsOI2DmMit6Z7vqys/edit#gid=sharing LS Nitride2 Data 2016]
 
*[https://docs.google.com/spreadsheets/d/1gGIWqkCnykPgBc3prhXExT7QcNjWm2HdbTtwugNqm18/edit#gid=sharing LS Nitride2 Data 2017]
 
*[https://docs.google.com/spreadsheets/d/1vwpDtiglR2DLWiYNhpBX77cyyj9lw55iVeFz1puN7bM/edit#gid=sharing LS Nitride2 Data 2018]
 
*[https://docs.google.com/spreadsheets/d/1zvSl2P5T926Ol48yH3FBCZm1zCeycl3S8GWQYtzi8VI/edit#gid=sharing LS Nitride2 Data 2019]
 
*[https://docs.google.com/spreadsheets/d/1SxW4t3xkiSkEPobUkpPF9m_gcC6yiaOPRlIgCWyqebg/edit#gid=sharing LS Nitride2 Data 2020]
 
  
===== Uniformity Data =====
+
==Standard Cleaning Procedure (PECVD #2)==
 +
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
  
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness Uniformity 2014]
+
#(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
*[https://docs.google.com/spreadsheets/d/1LpkaOpr7oNoyvxFkineD7i9FspO6LweJMulvZHJM5Zc/edit#gid=sharing LS Nitride2 Thickness Uniformity 2015]
+
#Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
*[https://docs.google.com/spreadsheets/d/1FRzW9BaIPF2D3cxPgjLq8hbvrBHXDNkiW6DiPVKQBRM/edit#gid=sharing LS Nitride2 Thickness Uniformity 2016]
 
*[https://docs.google.com/spreadsheets/d/1vyrgvdEZFgnQUilpa5Ka2nOfowY8zlmJfbQ77EamNBg/edit#gid=sharing LS Nitride2 Thickness Uniformity 2017]
 
*[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2018]
 
*[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2019]
 
*[https://docs.google.com/spreadsheets/d/1TMasE4I--H948aKCWEO1Y3Dw2pCA6-iqQ0km3v_2VFo/edit#gid=sharing LS Nitride2 Thickness Uniformity 2020]
 
  
==Amorphous-Si deposition (PECVD #2)==
+
===[https://wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
 +
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time.  The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
  
*[//www.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]
 
*[//www.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Films and Their Stress]
 
  
== Cleaning Recipes (PECVD #2) ==
+
'''Clean Times (PECVD#2''')
To Be Added...
+
{| class="wikitable"
 +
!Film Deposited
 +
!Cleaning Time (Dry)
 +
|-
 +
|SiO<sub>2</sub>
 +
|1 min. clean for every 1 min. deposition
 +
|-
 +
|Si<sub>3</sub>N<sub>4</sub>
 +
|1 min. clean for every 7 min of deposition
 +
|-
 +
|If > 29min total dep time
 +
(Season + Dep)
 +
|Wet Clean the Upper Lid/Chamber
 +
DI water then Isopropyl Alcohol on chamber wall & portholes
 +
|}
  
 
=[[ICP-PECVD (Unaxis VLR)]]=
 
=[[ICP-PECVD (Unaxis VLR)]]=
 +
2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.
  
==== Historical Particulate Data ====
+
The system currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.
* [https://docs.google.com/spreadsheets/d/1Q857p-lMQn3yq-rftHptaPShYZaZxolrY0YuDDadYxo/edit#gid=sharing Particulates in Unaxis films @100C-2019]
 
* [https://docs.google.com/spreadsheets/d/1ZzbpDmkOI3IvGuKqyiQIP44sYJ89E3Zs9sLvjxvWMsc/edit#gid=sharing Particulates in Unaxis films @250C-2019]
 
* [https://docs.google.com/spreadsheets/d/1fMebt-6BfAurcjMv1aDsmm6VgPqokU73_2ReZFqzEEk/edit#gid=sharing Particulates in Unaxis films @250C-2020]
 
  
==SiN deposition (Unaxis VLR)==
+
===[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - Plots of all Process Control data===
  
The recipe '''SiN 100C''' is not valid currently, and is still under development.
+
==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==
-- Demis 2019-11-22
 
*[https://docs.google.com/spreadsheets/d/1hlNqtvKXKCD6aI8tnMx9dMTTiANM3pK7U9dtCtnDh-0/edit#gid=sharing SiN 100C 300nm Data-2019]
 
*[https://docs.google.com/spreadsheets/d/1kaLSwIAPLVuvhshVoc-JkgaF-gw97baSSJ1obvlsE50/edit#gid=sharing SiN 100C Table-2019]
 
*[https://docs.google.com/spreadsheets/d/1uIhx-TD11lDSjpCyPtgKC_CmuNWKLx6iLl5PJgVDt30/edit#gid=sharing Thickness Uniformity SiN 100C 300nm-2019]
 
  
=== SiN 250C  Data 2020===
+
*[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR 250C''"
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=sharing SiN 250C 300nm Data-2020]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1UTr93aWx0MjCwVBwRmYjPwo9ASluGQ-OrJhVG_R57aY/edit#gid=sharing SiN 250C Table-2020]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1916118198 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021
*[https://docs.google.com/spreadsheets/d/1YAx_Ix84xId8CAhDwZeFT7jLFUwg-BET9aBwg3DxUmQ/edit#gid=sharing Thickness Uniformity SiN 250C 300nm-2020]
 
  
=== SiN  LS 250C  Data 2020===
+
==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=sharing SiN LS 250C 300nm Data-2020]
 
*[https://docs.google.com/spreadsheets/d/1MXW7UNpTyk93ucOVQaSun5IX7QaUbSABNHNznb09qw8/edit#gid=sharing SiN LS 250C Table-2020]
 
*[https://docs.google.com/spreadsheets/d/1NDyxH1i9COM2XTryLqYPE9yOekgRslAJUO7o56iTOEQ/edit#gid=sharing Thickness Uniformity SiN LS 250C 300nm-2020]
 
  
==SiO2 deposition (Unaxis VLR)==
+
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiO2 HDR 250C''"
 +
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Present Data</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=939753086 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>]
  
== SiO2 100C Data 2019 ==
+
==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==
*[https://docs.google.com/spreadsheets/d/1sk_3Gn9yTOsgpFPTYv1MF0lGo3xHqNM-MQ2Kd4beu10/edit#gid=sharing SiO2 LDR 100C Table-2019]
 
*[https://docs.google.com/spreadsheets/d/1vYAFwFCWE-bH7iZXXazFyY56vjCcTMIx9fcRJNO115s/edit#gid=sharing SiO2 HDR 100C Table-2019]
 
  
=== Historical Data ===
+
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiN 250C''"
==== Thin-Film Properties ====
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1UXjhMJGOYDNJUOkgAoDUbfbAOjmQp163JLs5FvgNevM/edit#gid=sharing SiO2 LDR 100C 300nm Data-2019]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=782128304 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] - before Oct. 2021
*[https://docs.google.com/spreadsheets/d/1ZAdNJH_N4FUuBQphB0qVnKHCM8Nwzv9tP32eDj-MIyE/edit#gid=sharing SiO2 HDR 100C 300nm Data-2019]
 
  
==== Uniformity Data ====
+
==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==
*[https://docs.google.com/spreadsheets/d/1tRuq4afSwd5DnhAnzIBvnrCy_n0v3q3IDa78bxCEeFI/edit#gid=sharing Thickness Uniformity SiO2 LDR 100C 300nm-2019]
 
*[https://docs.google.com/spreadsheets/d/1y4mpR4i0gbzSNRbSYGASVSms36FuPh-jDnS3v82OEII/edit#gid=sharing Thickness Uniformity SiO2 HDR 100C 300nm-2019]
 
  
== SiO2 250C Data 2019 ==
+
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiN Low Stress 250C''"
*[https://docs.google.com/spreadsheets/d/1T_4gaJQ3wHSNptoAtFR1fN0ePwfw3PsQ0DLSjqGeyM4/edit#gid=sharing SiO2 LDR 250C Table-2019]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1nsdGPpfyZfIesyYG1PIU9uYyuzQWrfpsvVWM6J_H6BI/edit#gid=sharing SiO2 HDR 250C Table-2019]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1024532473 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] - before Oct. 2021
  
=== Historical Data ===
+
==Standard Cleaning Procedure [ICP-PECVD]==
=== Thin-Film Properties ===
+
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material.  See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
*[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=sharing SiO2 LDR 250C 300nm Data-2019]
 
*[https://docs.google.com/spreadsheets/d/16s-tUna9xrkKneK1lE-qSPuUHWlDmP6Qu3IngBXP3R8/edit#gid=sharing SiO2 HDR 250C 300nm Data-2019]
 
=== Uniformity Data ===
 
*[https://docs.google.com/spreadsheets/d/1Xi21OrargcNRthZ2fM_56APB8O599ctDfq5E_6B5Ft0/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2019]
 
*[https://docs.google.com/spreadsheets/d/1Mm_rsTm9xDQ50kZx6X6EZ5dTegUvinq0zFxRtE8B2R4/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2019]
 
  
==SiO2 250C Data 2020==
+
*SiNx etches at 20nm/min
*[https://docs.google.com/spreadsheets/d/1T_4gaJQ3wHSNptoAtFR1fN0ePwfw3PsQ0DLSjqGeyM4/edit#gid=sharing SiO2 LDR 250C Table-2020]
+
*SiO<sub>2</sub> etches at 40nm/min
*[https://docs.google.com/spreadsheets/d/1nsdGPpfyZfIesyYG1PIU9uYyuzQWrfpsvVWM6J_H6BI/edit#gid=sharing SiO2 HDR 250C Table-2020]
 
=== Historical Data ===
 
  
===Thin-Properties===
+
===Standard Clean Recipe===
*[https://docs.google.com/spreadsheets/d/1bU2Gu3x3DNyrq8skMAQZJCsra-IcoDCT0U5D135YPgc/edit#gid=sharing SiO2 LDR 250C 300nm Data-2020]
+
''To Be Added''
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=sharing SiO2 HDR 250C 300nm Data-2020]
 
 
 
===Uniformity Data===
 
*[https://docs.google.com/spreadsheets/d/1-ytu5R75FAXNfhJZTRuK2eRZyu_L6Hy1BWV2zN6_tRA/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2020]
 
*[https://docs.google.com/spreadsheets/d/1nzVeCKsmgL17zft6axQlixpvsEowJOG7qCnLQm_0XxE/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2020]
 
 
 
== Cleaning Recipes (Unaxis VLR Dep) ==
 
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material.  See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
 
* SiNx etches at 20nm/min
 
* SiO2 etches at 40nm/min
 

Latest revision as of 17:30, 13 June 2022

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

PECVD 1 Process Control Plots - Plots of all process control data

SiO2 deposition (PECVD #1)

SiN deposition (PECVD #1)

Low Stress Si3N4 (PECVD#1)

SiOxNy deposition (PECVD #1)

Standard Cleaning Procedure (PECVD #1)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  2. Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Table of Cleaning Times
Film Dep'd Cleaning Time
SiO2 TBD
Si3N4 TBD
SiOxNy Same as XYZ

Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

PECVD 2 (Advanced Vacuum)

PECVD 2 Process Control Plots - Plots of all process control data

SiO2 deposition (PECVD #2)

SiN deposition (PECVD #2)

Low-Stress SiN deposition (PECVD #2)

Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)

Amorphous-Si deposition (PECVD #2)

Standard Cleaning Procedure (PECVD #2)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
  2. Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.


Clean Times (PECVD#2)

Film Deposited Cleaning Time (Dry)
SiO2 1 min. clean for every 1 min. deposition
Si3N4 1 min. clean for every 7 min of deposition
If > 29min total dep time

(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes

ICP-PECVD (Unaxis VLR)

2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

ICP-PECVD Process Control Plots - Plots of all Process Control data

Low Deposition Rate SiO2 [ICP-PECVD]

High Deposition Rate SiO2 [ICP-PECVD]

Si3N4 [ICP-PECVD]

Low Stress Si3N4 [ICP-PECVD]

Standard Cleaning Procedure [ICP-PECVD]

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min

Standard Clean Recipe

To Be Added