Difference between revisions of "PECVD Recipes"

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{{recipes|Vacuum Deposition}}
 
{{recipes|Vacuum Deposition}}
 +
 
=[[PECVD 1 (PlasmaTherm 790)]]=
 
=[[PECVD 1 (PlasmaTherm 790)]]=
*[https://docs.google.com/spreadsheets/d/1a0XrY6HuJ6L9niThZYI-u4XH69Hnbe3jkm1qKmrR8Rg/edit#gid=sharing Particulates in PECVD#1 2015]
 
*[https://docs.google.com/spreadsheets/d/1YNiof68Veeh08s_NtG5aCWUXW7GWDDU00HAimV_l8_g/edit#gid=sharing Particulates in PECVD#1 2017]
 
== SiN deposition (PECVD #1)  ==
 
*[[media:New PECVD1-SiO2-standard recipe 2014 SiO2 standard recipe.pdf|SiN Standard Recipe]]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN Data 2014]
 
*[https://docs.google.com/spreadsheets/d/1phx1WficlUEg0xSahaAq4zrRk6m9Eb0ausO8wcAmXqs/edit#gid=sharing SiN Data 2015]
 
*[https://docs.google.com/spreadsheets/d/1VNSNTqnbE4SFk0HyhBAy3GJzi0jRQEs8cgk1v2_Uam8/edit#gid=sharing SiN Data 2016]
 
*[https://docs.google.com/spreadsheets/d/1TG1X2wpl2fWaHEtAHtpZFBVSCk1BQeGJQ8LA2M2qBJ0/edit#gid=sharing SiN Data 2017]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 1000A Thickness uniformity 2014]
 
*[https://docs.google.com/spreadsheets/d/1-pET1Eojooso5UHk90W-5uYByDDdrCyRnggqewxTmVg/edit#gid=sharing SiN 1000A Thickness uniformity 2015]
 
*[https://docs.google.com/spreadsheets/d/1V_-KzsdR-2tSnJGtUdQWokmnNIY949t0vdQOp7RfCgc/edit#gid=sharing SiN 1000A Thickness uniformity 2016]
 
*[https://docs.google.com/spreadsheets/d/1tM-a4VBEqpxr2G8PGGLTbsR6BQBmvqXNRBw0mikAUS0/edit#gid=sharing SiN 1000A Thickness uniformity 2017]
 
  
== SiO<sub>2</sub> deposition (PECVD #1)  ==
+
===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===
*[[media:New PECVD1-SiN-standard recipe 2014 SiN standard recipe.pdf|SiO<sub>2</sub> Standard Recipe]]
+
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> Data 2014]
+
==SiO<sub>2</sub> deposition (PECVD #1)==
*[https://docs.google.com/spreadsheets/d/1JWNUcH8l90xif-0BhYKJee9nXxE4hnvvp6N2NtZLYXY/edit#gid=sharing SiO<sub>2</sub> Data 2015]
+
 
*[https://docs.google.com/spreadsheets/d/1F2pfsVnbUgaE9tsm8HZMlY6cyt-nhui0IpvGc6udhDU/edit#gid=sharing SiO<sub>2</sub> Data 2016]
 
*[https://docs.google.com/spreadsheets/d/1MblK5Zr5Skfw0s9Hdhqr_cCwN-nCgM-ofZnsAyvVRq8/edit#gid=sharing SiO<sub>2</sub> Data 2017]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDQ3VEtZQVRpdVdlbGtIZHpTNmFzNmc&usp=drive_web#gid=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014]
 
*[https://docs.google.com/spreadsheets/d/1NQy-ADou6f2NBU-9jZG8KME1lOz0X5mh6HZV9_jPGes/edit#gid=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2015]
 
*[https://docs.google.com/spreadsheets/d/1WUCm_dWpxKTjfFf1rNfLuxvwMxsyCYON_OZ3gb50L_s/edit#gid=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2016]
 
*[https://docs.google.com/spreadsheets/d/1dpC_AkPD-etIH6fVuQqLfd4UMNQCEtcqhvmBpwbEncE/edit#gid=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2017]
 
  
 +
*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
  
==  OTHER recipes: LS SiN  and SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1) ==
+
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
<!-- Placeholders - Not uploaded yet-->
+
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1503619544 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier
*[[media:New PECVD1-LS SIN-Turner05recipe 2014 LS SIN recipe.pdf|LS SiN Standard Recipe]]
+
 
*[https://docs.google.com/spreadsheets/d/1Joz0az9TGZWQc4CiMQJZzLBbNFbx_hH2Oc0B4NNJmYk/edit#gid=sharing LS SiN Data 2014]
+
==SiN deposition (PECVD #1)==
*[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=sharing LS SiN 1000A Thickness uniformity 2014]
+
 
*[[media:New PECVD1-LS SION-recipe 2014 LS SION recipe.pdf|SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]]
+
*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014]
+
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]
 +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=604790654 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier
 +
 
 +
==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)==
 +
 
 +
*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]
 +
*[[To Be Added|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]] ''- To Be Added''
 +
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=934830479 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier
 +
 
 +
==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)==
 +
 
 +
*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]
 +
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] - ''Rate, Index etc.''
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]
 +
 +
==Standard Cleaning Procedure (PECVD #1)==
 +
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
 +
 +
#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
 +
#Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
 +
#
 +
 +
{| class="wikitable"
 +
|+Table of Cleaning Times
 +
!Film Dep'd
 +
!Cleaning Time
 +
|-
 +
|SiO<sub>2</sub>
 +
|TBD
 +
|-
 +
|Si<sub>3</sub>N<sub>4</sub>
 +
|TBD
 +
|-
 +
|SiOxNy
 +
|Same as XYZ
 +
|}
 +
 +
#
 +
 +
===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
 +
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time.  The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.
  
 
=[[PECVD 2 (Advanced Vacuum)]]=
 
=[[PECVD 2 (Advanced Vacuum)]]=
*[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates in Advanced PECVD#2 2015 ]
 
*[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates in Advanced PECVD#2 2017 ]
 
== SiO<sub>2</sub> deposition (PECVD #2)  ==
 
*[[media:New Adv PECVD OXIDE 300C standard recipe OXIDE Standard Recipe.pdf|Oxide Standard Recipe]]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data 2014]
 
*[https://docs.google.com/spreadsheets/d/1d5boeJRWWgMqvQe6nVM7m8s3KAcS4Yp2L5CEU9svkX4/edit#gid=sharing Oxide Data 2015]
 
*[https://docs.google.com/spreadsheets/d/1XQRcTJdw9AIMPAUsH0n9Ic9Fe1_xGDSvAxD4gVc9FBw/edit#gid=sharing Oxide data 2016]
 
*[https://docs.google.com/spreadsheets/d/1vcaHwraMGNHuRxgWwGp78EJf4T3Jk182wxoCz_neuck/edit#gid=sharing Oxide Data 2017]
 
*[https://docs.google.com/spreadsheets/d/1GQ9poWsd9BW-JUBS7U5B2pGMNdxdbtgExoJNn2Ikhxs/edit#gid=sharing New Data-300nm Oxide 2017]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness Uniformity 2014]
 
*[https://docs.google.com/spreadsheets/d/16pZHcGwesXB1mMPwntOudBIlPvRh6A6DI37DEwyYfPw/edit#gid=sharing Oxide Thickness Uniformity 2015]
 
*[https://docs.google.com/spreadsheets/d/10OEuANVNmHqWvx-92zibechIrHK5kgqSK4B_O_O3-YI/edit#gid=sharing Oxide Thickness Uniformity 2016]
 
*[https://docs.google.com/spreadsheets/d/19JjJYdFNFzO685Hp9hODVRFAYF5bP3IEYGTRGQjqLN4/edit#gid=sharing Oxide Thickness Uniformity 2017]
 
  
== SiN deposition (PECVD #2)  ==
+
===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===
*[[media:New Adv PECVD-Nitride2 300C standard recipe Nitride2 Standard Recipe.pdf|Nitride2 Standard Recipe]]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014]
 
*[https://docs.google.com/spreadsheets/d/1SkYqOwgjUyMaFBPhuTjMvBTXu0KdQFNmITryF_OVi8o/edit#gid=sharing Nitride2 Data 2015]
 
*[https://docs.google.com/spreadsheets/d/1HJszgZyEZR9ZsiJpQM6pdsoQ6pWwI6brXasdmfDRoBQ/edit#gid=sharing Nitride2 Data 2016]
 
*[https://docs.google.com/spreadsheets/d/1f3JBEnr7lf0yIMlzlOYKv_bXlIDyXt8vec_rSVJIoOk/edit#gid=sharing Nitride2 Data 2017]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness Uniformity 2014]
 
*[https://docs.google.com/spreadsheets/d/14_dYQu3z31fF_oxsUUX8BmDucgv6B07xB3_zqP0HmvM/edit#gid=sharing Nitride2 Thickness Uniformity 2015]
 
*[https://docs.google.com/spreadsheets/d/1qBHs7uALM2OdE-yXOq4uZk6aUQEjZRjG1C6RcMEf0sk/edit#gid=sharing Nitride2 Thickness Uniformity 2016]
 
*[https://docs.google.com/spreadsheets/d/1WJcYzHUjLrWpys_i-Q96FN_lBDBufpXZKZVEX_gri_Q/edit#gid=sharing Nitride2 Thickness Uniformity 2017]
 
*[[media:SiNx_Films_by_PECVD2.pdf|SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate]]
 
  
==LS SiN deposition (PECVD #2) ==
+
==SiO<sub>2</sub> deposition (PECVD #2)==
  
*[[media:Adv PECVD-LS Nitride2 300C standard recipe .pdf|LS Nitride2 Standard Recipe]]
+
*[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data 2014]
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/16Q6BrPoNiFP0elVoSGwXRfQdHXzAXOgiyqKmEw-4kII/edit#gid=sharing LS Nitride2 Data 2015]
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=2024333220 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021
*[https://docs.google.com/spreadsheets/d/1GZ58eFzD-T8DJ2Nsaj74u6cvawzsOI2DmMit6Z7vqys/edit#gid=sharing LS Nitride2 Data 2016]
 
*[https://docs.google.com/spreadsheets/d/1gGIWqkCnykPgBc3prhXExT7QcNjWm2HdbTtwugNqm18/edit#gid=sharing LS Nitride2 Data 2017]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness Uniformity 2014]
 
*[https://docs.google.com/spreadsheets/d/1LpkaOpr7oNoyvxFkineD7i9FspO6LweJMulvZHJM5Zc/edit#gid=sharing LS Nitride2 Thickness Uniformity 2015]
 
*[https://docs.google.com/spreadsheets/d/1FRzW9BaIPF2D3cxPgjLq8hbvrBHXDNkiW6DiPVKQBRM/edit#gid=sharing LS Nitride2 Thickness Uniformity 2016]
 
*[https://docs.google.com/spreadsheets/d/1vyrgvdEZFgnQUilpa5Ka2nOfowY8zlmJfbQ77EamNBg/edit#gid=sharing LS Nitride2 Thickness Uniformity 2017]
 
  
== Amorphous-Si deposition (PECVD #2) ==
+
==SiN deposition (PECVD #2)==
*[[media:03-Amorphous-Si-PECVD-2.pdf|Amorphous Si Deposition Recipe]]
 
*[[media:ASi_deposition_and_film_stress_using_AV_dep_tool.pdf|Amorphous Si Films and Their Stress]]
 
  
= [[ICP-PECVD (Unaxis VLR)]] =
+
*[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''Nitride2''"
==SiN deposition (Unaxis VLR) ==
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
=== SiN (2% SiH<sub>4</sub>)  ===
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1153442266 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+
 
|- bgcolor="#D0E7FF"
+
==Low-Stress SiN deposition (PECVD #2)==
!width=350 align=center|50° (pinholes)
+
''Low-Stress Silicon Nitride, Si<sub>3</sub>N<sub>4</sub> (< ±100 MPa)''
!width=350 align=center|100° (pinholes)
+
 
!width=350 align=center|250°
+
*[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''LSNitride2''
|-align=left
+
 
|
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[[Media:PECVD2-SiN-Recipe-5W-50C-High-Stress.pdf|SiN Deposition Recipe (5W 50° High Stress)]]  
+
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Process Control Data]
*[[Media:PECVD2-SiN-Recipe-50W-50C-Medium-Stress.pdf|SiN Deposition Recipe (50W 50° Medium Stress)]]
+
*[[To Be Added|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*[[Media:PECVD2-SiN-Recipe-120W-50C-Low-Stress.pdf|SiN Deposition Recipe (120W 50° Low Stress)]]
+
*:''Old Versions of the recipe:''
|
+
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*[[Media:PECVD2-SiN-Recipe-5W-100C-High-Stress.pdf|SiN Deposition Recipe (5W 100° High Stress)]]  
+
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''
*[[Media:PECVD2-SiN-Recipe-50W-100C-Medium-Stress.pdf|SiN Deposition Recipe (50W 100° Medium Stress)]]  
+
 
*[[Media:PECVD2-SiN-Recipe-120W-100C-Low-Stress.pdf|SiN Deposition Recipe (120W 100° Low Stress)]]
+
==Amorphous-Si deposition (PECVD #2)==
*[[Media:PECVD2-SiNx-l.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (120W 100° Low Stress)]]
+
 
*[[Media:PECVD2-SiNx-medium-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (50W 100° Medium Stress)]]
+
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]
*[[Media:PECVD2-SiNx -h.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (5W 100° High Stress)]]
+
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress]
*[[Media:PECVD2-SiNx-medium stress-SEM-2% SiH4-100C-50W.pdf|SiNx SEM images (50W 100° Medium Stress)]]
+
 
*[[Media:PECVD2-SiNx-high stress-SEM-2% SiH4-100C-5W.pdf|SiNx SEM images (5W 100° High Stress)]]
+
==Standard Cleaning Procedure (PECVD #2)==
|
+
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
*[[Media:PECVD2-SiN-Recipe-5W-250C-High-Stress.pdf|SiN Deposition Recipe (5W 250° High Stress)]]  
+
 
*[[Media:PECVD2-SiN-Recipe-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe (50W 250° Medium Stress)]]
+
#(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
*[[Media:PECVD2-SiN-Recipe-120W-250C-Low-Stress.pdf|SiN Deposition Recipe (120W 250° Low Stress)]]
+
#Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
*[[Media:PECVD2-SiNx-l.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (120W 250° Low Stress)]]
+
 
*[[Media:PECVD2-SiNx-medium-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (50W 250° Medium Stress)]]
+
===[https://wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
*[[Media:PECVD2-SiNx -h.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (5W 250° High Stress)]]
+
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time.  The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
*[[Media:28-Very-low-pin-hole-density_SiNx_film_at_300_C.pdf|Very-Low-Pin-Hole-Density SiNx Recipe(25W 300°)]]
+
 
 +
 
 +
'''Clean Times (PECVD#2''')
 +
{| class="wikitable"
 +
!Film Deposited
 +
!Cleaning Time (Dry)
 +
|-
 +
|SiO<sub>2</sub>
 +
|1 min. clean for every 1 min. deposition
 
|-
 
|-
 +
|Si<sub>3</sub>N<sub>4</sub>
 +
|1 min. clean for every 7 min of deposition
 +
|-
 +
|If > 29min total dep time
 +
(Season + Dep)
 +
|Wet Clean the Upper Lid/Chamber
 +
DI water then Isopropyl Alcohol on chamber wall & portholes
 
|}
 
|}
  
=== SiN (2% SiH<sub>4</sub> - No-Ar)  ===
+
=[[ICP-PECVD (Unaxis VLR)]]=
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+
2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.
|- bgcolor="#D0E7FF"
+
 
!width=350 align=center|50° (pinholes)
+
  The system currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.
!width=350 align=center|100° (pinholes)
+
 
!width=350 align=center|250°
+
===[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - Plots of all Process Control data===
|-align=left
+
 
|
+
==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-50C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 50° High Stress)]]
+
 
*[[Media:41-High-stress_SiNx_at_50_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of High-stress SiN<sub>x</sub> (No Ar, 5W, 50°)]]
+
*[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR 250C''"
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-50C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 50° Medium Stress)]]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
*[[Media:36-Medium-stress_SiNx_using_Unaxis_ICP_deposition_tool-a.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 50°)]]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1916118198 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-50C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 50° Low Stress)]]
+
 
*[[Media:40-Low-stress_SiNx_at_50_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 50°)]]
+
==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==
|
+
 
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-100C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 100° High Stress)]]
+
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiO2 HDR 250C''"
*[[Media:38-High-stress_SiNx_at_100_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of high-stress SiN<sub>x</sub> (No Ar, 5W, 100°)]]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Present Data</nowiki>]
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-100C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 100° Medium Stress)]]
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=939753086 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>]
*[[Media:39-Medium-stress_SiNx_at_100C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 100°)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-100C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 100° Low Stress)]]
 
*[[Media:37-Low-stress_SiNx_at_100_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 100°)]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-250C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 250° High Stress)]]
 
*[[Media:34-High-stress_SiNx_at_250_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of High-stress SiN<sub>x</sub> (No Ar, 5W, 250°)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 250° Medium Stress)]]
 
*[[Media:36-Medium-stress_SiNx_using_Unaxis_ICP_deposition_tool-a.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 250°)]]
 
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-250C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 250° Low Stress)]]
 
*[[Media:35-Low-stress_SiNx_at_250_C_using_Unaxis_ICP_deposition_tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 250°)]]
 
|-
 
|}
 
  
=== SiN  (2% SiH<sub>4</sub> - No-Ar - Extra N<sub>2</sub>)  ===
+
==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 
|- bgcolor="#D0E7FF"
 
!width=350 align=center|50° (pinholes)
 
!width=350 align=center|100° (pinholes)
 
!width=350 align=center|250°
 
|-align=left
 
|
 
*[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-50C-Low-Stress.pdf|SiN Deposition Recipe - No Ar Extra N<sub>2</sub> (120W 50° Low Stress)]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-100C-Low-Stress.pdf|SiN Deposition Recipe - No Ar Extra N<sub>2</sub> (120W 100° Low Stress)]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-250C-Low-Stress.pdf|SiN Deposition Recipe - No Ar Extra N<sub>2</sub> (120W 250° Low Stress)]]
 
|-
 
|}
 
  
=== SiN  (100% SiH<sub>4</sub> ) ===
+
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiN 250C''"
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Current Process Control Data</nowiki>]
|- bgcolor="#D0E7FF"
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=782128304 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] - before Oct. 2021
!width=350 align=center|50° (pinholes)
 
!width=350 align=center|100° (pinholes)
 
!width=350 align=center|250°
 
|-align=left
 
|
 
*[[Media:PECVD2-SiN-Recipe-Low stress SiNx-100%SiH4-120W-50C.pdf|SiN Deposition Recipe (120W 50° Low Stress)]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN Deposition Recipe (120W 100° Low Stress)]]
 
*[[Media:PECVD2-SiN-Table-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN Comparison Table 120W-100(250)C]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-Low stress SiNx-100% SiH4-120W-250C.pdf|SiN Deposition Recipe (120W 250° Low Stress)]]
 
*[[Media:PECVD2-SiN-Table-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN Comparison Table 120W, 100(250)C ]]
 
|- align=left
 
|
 
*[[Media:PECVD2-SiN-Recipe-Medium stress SiNx-100%SiH4-120W-50C.pdf|SiN Deposition Recipe (50W 50° Medium Stress)]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-Medium stres SiNx-100% SiH4-120W-100C.pdf|SiN Deposition Recipe (50W 100° Medium Stress)]]
 
*[[Media:PECVD2-SiN-Table-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN Comparison Table 50W, 100(250)C]]
 
*[[Media:27-SiNx_Film_(Bias%3D50W)_Sidewall_Coverage.pdf|SiN SEM sidewall coverage]]
 
|
 
*[[Media:PECVD2-SiN-Recipe-Medium stress SiNx-100% SiH4-120W-250C.pdf|SiN Deposition Recipe (50W 250° Medium Stress)]]
 
*[[Media:PECVD2-SiN-Table-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN ComparisonTable 50W, 100(250)C]]
 
|-
 
|}
 
  
==SiO<sub>2</sub> deposition (Unaxis VLR) ==
+
==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==
=== SiO<sub>2</sub> (2% SiH<sub>4</sub>)  ===
 
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
 
|- bgcolor="#D0E7FF"
 
!width=350 align=center|50°
 
!width=350 align=center|100°
 
!width=350 align=center|250°
 
|-align=left
 
|
 
*[[Media:PECVD2-SiO2Recipe-5W-50C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 50°)]]
 
|
 
*[[Media:PECVD2-SiO2Recipe-5W-100C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 100°)]]
 
*[[Media:SiO2 film Unaxis ICP vs PECVD I.pdf|SiO<sub>2</sub> film Unaxis ICP vs PECVD I]]
 
*[[Media:SEM pictures SiO2 100C.pdf|SiO<sub>2</sub> SEM pictures 100C]]
 
|
 
*[[Media:PECVD2-SiO2Recipe-5W-250C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 250°)]]
 
*[[Media:SiO2 film Unaxis ICP vs PECVD I.pdf|SiO<sub>2</sub> film Unaxis ICP vs PECVD I]]
 
|-
 
|}
 
  
=== SiO<sub>2</sub> (2% SiH<sub>4</sub> - No Ar)  ===
+
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiN Low Stress 250C''"
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Current Process Control Data</nowiki>]
|- bgcolor="#D0E7FF"
+
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1024532473 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] - before Oct. 2021
!width=350 align=center|50°
 
!width=350 align=center|100°
 
!width=350 align=center|250°
 
|-align=left
 
|
 
*[[Media:PECVD2-SiO2-Recipe-NoAr-50C.pdf|SiO<sub>2</sub> Deposition Recipe - No Ar (50°)]]
 
*[[Media:29-UnaxisPM3-SiO2-SiH4-O2-He.pdf|SiO<sub>2</sub> Film Properties-No Ar]]
 
|
 
*[[Media:PECVD2-SiO2-Recipe-NoAr-100C.pdf|SiO<sub>2</sub> Deposition Recipe - No Ar (100°)]]
 
*[[Media:29-UnaxisPM3-SiO2-SiH4-O2-He.pdf|SiO<sub>2</sub> Film Properties-No Ar]]
 
|
 
*[[Media:PECVD2-SiO2-Recipe-NoAr-250C.pdf|SiO<sub>2</sub> Deposition Recipe - No Ar (250°)]]
 
*[[Media:29-UnaxisPM3-SiO2-SiH4-O2-He.pdf|SiO<sub>2</sub> Film Properties-No Ar]
 
|-
 
|}
 
  
=== SiO<sub>2</sub> (100% SiH<sub>4</sub> HDR)  ===
+
==Standard Cleaning Procedure [ICP-PECVD]==
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
|- bgcolor="#D0E7FF"
 
!width=350 align=center|50°
 
!width=350 align=center|100°
 
!width=350 align=center|250°
 
|-align=left
 
|
 
*[[Media:SiO2 100% SiH4 HDR 50C.pdf|SiO<sub>2</sub> Deposition Recipe - HDR (50°)]]
 
|
 
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-HDR-100C.pdf|SiO<sub>2</sub> Deposition Recipe - HDR (100°)]]
 
*[[Media:PECVD2-SiO2-HDR-100% SiH4.pdf|SiO<sub>2</sub> Comparison Table - HDR (100°)]]
 
|
 
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-HDR-250C.pdf|SiO<sub>2</sub> Deposition Recipe - HDR (250°)]]
 
*[[Media:PECVD2-SiO2-HDR-100% SiH4.pdf|SiO<sub>2</sub> Comparison Table - HDR (250°)]]
 
|-
 
|}
 
  
=== SiO<sub>2</sub> (100% SiH<sub>4</sub> LDR)  ===
+
*SiNx etches at 20nm/min
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+
*SiO<sub>2</sub> etches at 40nm/min
|- bgcolor="#D0E7FF"
 
!width=350 align=center|50°
 
!width=350 align=center|100°
 
!width=350 align=center|250°
 
|-align=left
 
|
 
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-50C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (50°)]]
 
|
 
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-100C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (100°)]]
 
*[[Media:PECVD2-SiO2-LDR-100% SiH4.pdf|SiO<sub>2</sub> Comparison Table - LDR (100°)]]
 
*[[Media:PECVD2-SiO2-SEM-LDR SiO2-100% SiH4-100C-15W.pdf|SiO<sub>2</sub> SEM sidewall coverage]]
 
|
 
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-250C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (250°)]]
 
*[[Media:PECVD2-SiO2-LDR-100% SiH4.pdf|SiO<sub>2</sub> Comparison Table - LDR (250°)]]
 
|-
 
|}
 
  
=== Amorphous Si (100%SiH<sub>4</sub> Ar He)  ===
+
===Standard Clean Recipe===
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
+
''To Be Added''
|- bgcolor="#D0E7FF"
 
!width=350 align=center|90°
 
!width=350 align=center|250°
 
|-align=left
 
|
 
*[[Media:02-ICP-PECVD-a-Si_Film-90C.pdf|a-Si Deposition Recipe - 90°]]
 
|
 
*[[Media:01-ICP-PECVD-a-Si-Deposition_Recipe-250C.pdf|a-Si Deposition Recipe - 250°]]
 
*[[Media:Amorphous_Silicon_Film_Deposition_using_12.5W_bias_on_SiO2-Si.pdf|Thick, Defects-free a-Si Film on SiO<sub>2</sub>/Si with a Lower Bias Power]]
 
|-
 
|}
 

Latest revision as of 17:30, 13 June 2022

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

PECVD 1 Process Control Plots - Plots of all process control data

SiO2 deposition (PECVD #1)

SiN deposition (PECVD #1)

Low Stress Si3N4 (PECVD#1)

SiOxNy deposition (PECVD #1)

Standard Cleaning Procedure (PECVD #1)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  2. Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Table of Cleaning Times
Film Dep'd Cleaning Time
SiO2 TBD
Si3N4 TBD
SiOxNy Same as XYZ

Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

PECVD 2 (Advanced Vacuum)

PECVD 2 Process Control Plots - Plots of all process control data

SiO2 deposition (PECVD #2)

SiN deposition (PECVD #2)

Low-Stress SiN deposition (PECVD #2)

Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)

Amorphous-Si deposition (PECVD #2)

Standard Cleaning Procedure (PECVD #2)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
  2. Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.


Clean Times (PECVD#2)

Film Deposited Cleaning Time (Dry)
SiO2 1 min. clean for every 1 min. deposition
Si3N4 1 min. clean for every 7 min of deposition
If > 29min total dep time

(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes

ICP-PECVD (Unaxis VLR)

2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

ICP-PECVD Process Control Plots - Plots of all Process Control data

Low Deposition Rate SiO2 [ICP-PECVD]

High Deposition Rate SiO2 [ICP-PECVD]

Si3N4 [ICP-PECVD]

Low Stress Si3N4 [ICP-PECVD]

Standard Cleaning Procedure [ICP-PECVD]

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min

Standard Clean Recipe

To Be Added