Difference between revisions of "PECVD Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 3: Line 3:
 
== SiN deposition (PECVD #1) ==
 
== SiN deposition (PECVD #1) ==
 
*[[media:PECVD1-SiN-standard recipe 2014.pdf|SiN Standard Recipe]]
 
*[[media:PECVD1-SiN-standard recipe 2014.pdf|SiN Standard Recipe]]
*[[media:PECVD1 SIN Data-March 2014 SIN data.pdf|SiN Data (Deposition rate, Refractive index, Stress, HF etch rate)]]
+
*[[media:|SiN Data (Deposition rate, Refractive index, Stress, HF etch rate)]]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN Data March 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN Data March 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGtRLWROZGFONTBpLVBNRGQyU3Mxa2c&usp=drive_web#gid=sharing SiN 1000A Thickness uniformity 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGtRLWROZGFONTBpLVBNRGQyU3Mxa2c&usp=drive_web#gid=sharing SiN 1000A Thickness uniformity 2014]

Revision as of 15:00, 15 April 2014

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

  • Deposition Rate: ≈ 9.0 nm/min
  • Refractive Index: ≈ 1.952
  • Stress ≈ 484MPa

SiO2 deposition (PECVD #2)

  • Deposition Rate: ≈ 28.0 nm/min
  • Refractive Index: ≈ 1.472
  • Stress ≈ -270MPa

LS SiN deposition (PECVD #2)

  • Deposition Rate: ≈ 8.34 nm/min
  • Refractive Index: ≈ 1.932
  • Stress ≈ -45MPa

Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiN (100% SiH4 )

50° 100° 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°

Amorphous Si (100%SiH4 Ar He)

90° 250°