Difference between revisions of "PECVD Recipes"

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==LS SiN deposition (PECVD #2) ==
 
==LS SiN deposition (PECVD #2) ==
   
*[[media:|LS Nitride2 Standard Recipe]]
+
*[[media:New Advanced PECVD-LS Nitride2 300C standard recipe.pdf|LS Nitride2 Standard Recipe]]
 
*[[media:Advanced PECVD LS NITRIDE2 March 2014.pdf|LS Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate )]]
 
*[[media:Advanced PECVD LS NITRIDE2 March 2014.pdf|LS Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate )]]
   

Revision as of 10:37, 31 March 2014

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

SiO2 deposition (PECVD #2)

LS SiN deposition (PECVD #2)


Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiN (100% SiH4 )

50° 100° 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°

Amorphous Si (100%SiH4 Ar He)

90° 250°