Difference between revisions of "PECVD Recipes"

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=[[PECVD 1 (PlasmaTherm 790)]]=
 
=[[PECVD 1 (PlasmaTherm 790)]]=
 
== SiN deposition (PECVD #1) ==
 
== SiN deposition (PECVD #1) ==
*[[media:PECVD1-SiN-standard recipe 1000A.pdf|SiN Standard Recipe]]
+
*[[media:PECVD1-SiN-1000A Standard recipe.pdf|SiN Standard Recipe]]
 
*[[media:PECVD1 SIN Data-March 2014 SIN data.pdf|SiN Data (Deposition rate, Refractive index, Stress, HF etch rate)]]
 
*[[media:PECVD1 SIN Data-March 2014 SIN data.pdf|SiN Data (Deposition rate, Refractive index, Stress, HF etch rate)]]
 
*[[media:PECVD1 SIN 2-pt Thickness-index uniformity March 2014.pdf|SiN 2-pt thickness and index uniformity]]
 
*[[media:PECVD1 SIN 2-pt Thickness-index uniformity March 2014.pdf|SiN 2-pt thickness and index uniformity]]

Revision as of 08:54, 21 March 2014

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

SiO2 deposition (PECVD #2)

Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiN (100% SiH4 )

50° 100° 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°

Amorphous Si (100%SiH4 Ar He)

90° 250°