Difference between revisions of "PECVD Recipes"
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== SiO<sub>2</sub> deposition (PECVD #1) == |
== SiO<sub>2</sub> deposition (PECVD #1) == |
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*[[media:PECVD1-SiO2-Recipe.pdf|SiO<sub>2</sub> Deposition Recipe]] |
*[[media:PECVD1-SiO2-Recipe.pdf|SiO<sub>2</sub> Deposition Recipe]] |
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− | *[[media: |
+ | *[[media:|SiO<sub>2</sub> Calibration February 2014]] |
*[[media:PECVD1-SiO2-Data.pdf|SiO<sub>2</sub> Deposition Particle Thickness Data]] |
*[[media:PECVD1-SiO2-Data.pdf|SiO<sub>2</sub> Deposition Particle Thickness Data]] |
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Revision as of 11:28, 13 March 2014
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
- SiO2 Deposition Recipe
- [[media:|SiO2 Calibration February 2014]]
- SiO2 Deposition Particle Thickness Data
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
---|---|---|
SiN (100% SiH4 )
50° | 100° | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
---|---|---|
Amorphous Si (100%SiH4 Ar He)
90° | 250° |
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