Difference between revisions of "PECVD Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 128: Line 128:
 
*[[Media:PECVD2-SiO2Recipe-5W-100C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 100°)]]
 
*[[Media:PECVD2-SiO2Recipe-5W-100C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 100°)]]
 
*[[Media:SiO2 film Unaxis ICP vs PECVD I.pdf|SiO<sub>2</sub> film Unaxis ICP vs PECVD I]]
 
*[[Media:SiO2 film Unaxis ICP vs PECVD I.pdf|SiO<sub>2</sub> film Unaxis ICP vs PECVD I]]
  +
*[[Media:SEM pictures SiO2 100C.pdf|SiO<sub>2</sub> SEM pictures 100C]]
 
|
 
|
 
*[[Media:PECVD2-SiO2Recipe-5W-250C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 250°)]]
 
*[[Media:PECVD2-SiO2Recipe-5W-250C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 250°)]]

Revision as of 16:03, 10 October 2012

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

SiO2 deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiN (100% SiH4 )

50° 100° 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°