Difference between revisions of "PECVD Recipes"

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*[[Media:PECVD2-SiN-Recipe-120W-250C-Low-Stress.pdf|SiN Deposition Recipe (120W 250° Low Stress)]]
 
*[[Media:PECVD2-SiN-Recipe-120W-250C-Low-Stress.pdf|SiN Deposition Recipe (120W 250° Low Stress)]]
 
*[[Media:PECVD2-SiNx-l.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (120W 250° Low Stress)]]
 
*[[Media:PECVD2-SiNx-l.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (120W 250° Low Stress)]]
*[[Media:PECVD2-SiNx-medium-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (50W 100° Medium Stress)]]
+
*[[Media:PECVD2-SiNx-medium-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (50W 250° Medium Stress)]]
 
*[[Media:PECVD2-SiNx -h.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (5W 250° High Stress)]]
 
*[[Media:PECVD2-SiNx -h.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (5W 250° High Stress)]]
 
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Revision as of 16:17, 3 October 2012

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

SiO2 deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiN (100% SiH4 )

50° 100° 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°