Difference between revisions of "PECVD Recipes"
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− | === SiN (100% SiH<sub>4</sub> |
+ | === SiN (100% SiH<sub>4</sub> === |
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+ | !width=350 align=center|50° |
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+ | !width=350 align=center|100° |
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+ | !width=350 align=center|250° |
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+ | *[[Media:PECVD2-SiN-Recipe-120W-50C-Low-Stress.pdf|SiN Deposition Recipe (120W 50° Low Stress)]] |
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==SiO<sub>2</sub> deposition (Unaxis VLR) == |
==SiO<sub>2</sub> deposition (Unaxis VLR) == |
Revision as of 11:49, 3 October 2012
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
50° | 100° | 250° |
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SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
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SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
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SiN (100% SiH4
50° | 100° | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
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SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
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SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
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