Difference between revisions of "PECVD Recipes"

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=== SiN (100% SiH<sub>4</sub>) ===
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*[[Media:PECVD2-SiN-Recipe-100SiH4-100C-Low-Stress.pdf|SiN Deposition Recipe - 100% SiH<sub>4</sub> (100° Low Stress)]]
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*[[Media:PECVD2-SiN-Recipe-100SiH4-100C-Medium-Stress.pdf|SiN Deposition Recipe - 100% SiH<sub>4</sub> (100° Medium Stress)]]
   
 
==SiO<sub>2</sub> deposition (Unaxis VLR) ==
 
==SiO<sub>2</sub> deposition (Unaxis VLR) ==

Revision as of 08:57, 1 October 2012

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

SiO2 deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiN (100% SiH4)

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°