Difference between revisions of "PECVD Recipes"
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*[[media:PECVD2-SiO2-Data.pdf|SiO<sub>2</sub> Deposition Particle Thickness Data]] |
*[[media:PECVD2-SiO2-Data.pdf|SiO<sub>2</sub> Deposition Particle Thickness Data]] |
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− | =[[ICP-PECVD (Unaxis VLR)]]= |
+ | = [[ICP-PECVD (Unaxis VLR)]] = |
− | == |
+ | ==SiN deposition (Unaxis VLR) == |
+ | === SiN (2% SiH<sub>4</sub>) === |
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+ | *50° |
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⚫ | |||
+ | ** |
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+ | ** |
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+ | ** |
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+ | *100°C |
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⚫ | |||
⚫ | |||
⚫ | |||
+ | *250°C |
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+ | ** |
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+ | ** |
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+ | ** |
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+ | |||
+ | === SiN (2% SiH<sub>4</sub> - No-Ar) === |
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+ | *50° |
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+ | ** |
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+ | ** |
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+ | ** |
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+ | *100°C |
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+ | ** |
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+ | ** |
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+ | ** |
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+ | *250°C |
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+ | ** |
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+ | ** |
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+ | ** |
Revision as of 09:34, 17 August 2012
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
- 50°
- 100°C
- 250°C
SiN (2% SiH4 - No-Ar)
- 50°
- 100°C
- 250°C