Difference between revisions of "PECVD Recipes"
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(→SiN LS 250C Deposition (Unaxis VLR): notes about SiD4, new procedures) |
(fixed links to pre-2022 historical data) |
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{{recipes|Vacuum Deposition}} |
{{recipes|Vacuum Deposition}} |
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| + | |||
=[[PECVD 1 (PlasmaTherm 790)]]= |
=[[PECVD 1 (PlasmaTherm 790)]]= |
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| − | ==== Historical Particulate Data ==== |
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| − | + | ===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data=== |
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| − | *[https://docs.google.com/spreadsheets/d/1ZfkspbCQZmdThC8qB4XyjsyPAzrMF1QbHSMFmH6xSo4/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/1YNiof68Veeh08s_NtG5aCWUXW7GWDDU00HAimV_l8_g/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1VN551M2oXGWX306HDLQXvZIp3kgxEvWffQqMqnc8ISk/edit#gid=sharing Particulates in PECVD#1 films 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/11c0gQHnattIjVO95aBqiL-zL4DInRFihV-YB54xLT40/edit#gid=sharing Particulates in PECVD#1 films 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1ct-SSCRxf81W0jupCWzh81n0DBwPv6mwKFMzuWu_0TI/edit#gid=sharing Particulates in PECVD#1 films 2019] |
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| − | *[https://docs.google.com/spreadsheets/d/1yks0OgH8rpbYjin_Qr8vpPg8jBiZQRs_PKfyfo-Rqg0/edit#gid=sharing Particulates in PECVD#1 films 2020] |
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| − | == |
+ | ==SiO<sub>2</sub> deposition (PECVD #1)== |
| − | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>] |
| − | *[https://docs.google.com/spreadsheets/d/10ccfgCf5O0JM6L9J5XDz-gWVQz9P24VU/edit#gid= Si3N4 Recipe parameters] |
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| − | ==== Historical Data ==== |
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| + | *[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] |
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| − | ===== Thin-Film Properties ===== |
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| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier |
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| + | ==SiN deposition (PECVD #1)== |
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| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN 100nm Data 2014] |
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| − | *[https://docs.google.com/spreadsheets/d/1phx1WficlUEg0xSahaAq4zrRk6m9Eb0ausO8wcAmXqs/edit#gid=sharing SiN 100nm Data 2015] |
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| − | *[https://docs.google.com/spreadsheets/d/1VNSNTqnbE4SFk0HyhBAy3GJzi0jRQEs8cgk1v2_Uam8/edit#gid=sharing SiN 100nm Data 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/1TG1X2wpl2fWaHEtAHtpZFBVSCk1BQeGJQ8LA2M2qBJ0/edit#gid=sharing SiN 100nm Data 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1UlyvPcXUBQ5R2JwjKOjELvtCJaTElVhJHfzgjyaRd2A/edit#gid=sharing SiN 300nm Data 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1pAoTCaNSf0uZMyiQ2qKFd0s_e4e53P9Z1jUwtmTnlLk/edit#gid=sharing SiN 300nm Data 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1Pnw8eEaQ0rGblRYl6LeIm6wrh1hgeyjnHEbA4BzV8JM/edit#gid=sharing SiN 300nm Data 2019] |
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| − | *[https://docs.google.com/spreadsheets/d/1N_1Kk6J-wA4nlHpFg5EMDZNHR1kLDo_fr_Dvc6osSr4/edit#gid=sharing SiN 300nm Data 2020] |
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| + | *[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>] |
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| − | ===== Uniformity Data ===== |
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| + | *[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] |
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| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier |
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| + | ==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)== |
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| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 100 nm Thickness uniformity 2014] |
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| − | *[https://docs.google.com/spreadsheets/d/1-pET1Eojooso5UHk90W-5uYByDDdrCyRnggqewxTmVg/edit#gid=sharing SiN 100 nm Thickness uniformity 2015] |
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| − | *[https://docs.google.com/spreadsheets/d/1V_-KzsdR-2tSnJGtUdQWokmnNIY949t0vdQOp7RfCgc/edit#gid=sharing SiN 100 nm Thickness uniformity 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/1tM-a4VBEqpxr2G8PGGLTbsR6BQBmvqXNRBw0mikAUS0/edit#gid=sharing SiN 100 nm Thickness uniformity 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1Z83RCH5cAUfViO6vv6hAatcLVWZ95ex4nDdfffm9I7s/edit#gid=sharing SiN 300nm Thickness uniformity 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1b4EQZdRtVbqNwGBrItoG5-tz6RIzlsvBiCFR6ZXfylw/edit#gid=sharing SiN 300nm Thickness uniformity 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1-OiaH8frAzJzHKfbYTJP808ddzk1Wsv_CixDzG-sSfo/edit#gid=sharing SiN 300nm Thickness uniformity 2019] |
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| − | *[https://docs.google.com/spreadsheets/d/1eP6U2WJetu2wDB6wemkMPFG0JYx33I3Z3liihwae8Oo/edit#gid=sharing SiN 300nm Thickness uniformity 2020] |
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| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>] |
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| − | ==SiO<sub>2</sub> deposition (PECVD #1)== |
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| + | *[[To Be Added|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]] ''- To Be Added'' |
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| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier |
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| + | ==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)== |
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| − | *[https://docs.google.com/spreadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= SiO2 Standard Recipe] |
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| − | *[https://docs.google.com/spreadsheets/d/10ccfgCf5O0JM6L9J5XDz-gWVQz9P24VU/edit#gid= SiO2 Recipe parameters] |
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| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe] |
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| − | ==== Historical Data ==== |
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| + | *[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] - ''Rate, Index etc.'' |
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| + | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014] |
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| + | ==Standard Cleaning Procedure (PECVD #1)== |
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| − | ===== Thin-Film Properties ===== |
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| + | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
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| + | #Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) |
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| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Data 2014] |
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| + | #Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning. |
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| − | *[https://docs.google.com/spreadsheets/d/1JWNUcH8l90xif-0BhYKJee9nXxE4hnvvp6N2NtZLYXY/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2015] |
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| + | # |
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| − | *[https://docs.google.com/spreadsheets/d/1F2pfsVnbUgaE9tsm8HZMlY6cyt-nhui0IpvGc6udhDU/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/1MblK5Zr5Skfw0s9Hdhqr_cCwN-nCgM-ofZnsAyvVRq8/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/15SocIqWQvBKSvT5oCWoZAURLaaqb9KosxCN2rueZQN8/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1DdjIRGsfJ7WCrxQoGpmzkjLGJhpBTFNYLFmmHcNjAjk/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1QbhukSuVNueT067IVEpweSlD4B7GQecf-tfQFQeV6Xs/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2019] |
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| − | *[https://docs.google.com/spreadsheets/d/1OwyhfFPDH-XLPczA8cKoBPnujq9oNukaWkHq0KoFS40/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2020] |
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| + | {| class="wikitable" |
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| − | ==== Uniformity Data ==== |
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| + | |+Table of Cleaning Times |
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| + | !Film Dep'd |
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| + | !Cleaning Time |
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| + | |- |
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| + | |SiO<sub>2</sub> |
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| + | |TBD |
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| + | |- |
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| + | |Si<sub>3</sub>N<sub>4</sub> |
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| + | |TBD |
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| + | |- |
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| + | |SiOxNy |
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| + | |Same as XYZ |
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| + | |} |
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| + | # |
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| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDQ3VEtZQVRpdVdlbGtIZHpTNmFzNmc&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2014] |
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| − | *[https://docs.google.com/spreadsheets/d/1NQy-ADou6f2NBU-9jZG8KME1lOz0X5mh6HZV9_jPGes/edit#gid=sharing SiO<sub>2</sub> 100 nm Thickness uniformity 2015] |
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| − | *[https://docs.google.com/spreadsheets/d/1WUCm_dWpxKTjfFf1rNfLuxvwMxsyCYON_OZ3gb50L_s/edit#gid=sharing SiO<sub>2</sub> 100 nmThickness uniformity 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/1dpC_AkPD-etIH6fVuQqLfd4UMNQCEtcqhvmBpwbEncE/edit#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1Fa8mZIBIeJwvCwUbJ-28VcvVYj8rshhuDuXsYxA-cD8/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1YB_9USpuXGpIdSW2gNsptu5nSrLWAGsYu0SWoYEy0aQ/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1FatUAEegWuDRzVa47L1_cqgRs0AZ_Fao9jpwz5sfln0/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2019] |
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| − | *[https://docs.google.com/spreadsheets/d/1cUIEs2_RYK741CAaVVlfzqTEOqlPHQ9MnhgJ6fdTWMc/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2020] |
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| + | ===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]=== |
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| − | == Low-Stress SiN - LS-SiN (PECVD#1) == |
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| + | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it. |
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| − | |||
| − | *[//wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf LS SiN Standard Recipe] |
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| − | *[https://docs.google.com/spreadsheets/d/1Joz0az9TGZWQc4CiMQJZzLBbNFbx_hH2Oc0B4NNJmYk/edit#gid=sharing LS SiN Data 2014] |
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| − | *[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=sharing LS SiN 1000A Thickness uniformity 2014] |
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| − | |||
| − | == SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1) == |
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| − | |||
| − | *[//wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe] |
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| − | *[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] |
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| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014] |
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| − | |||
| − | == Cleaning Recipes (PECVD #1) == |
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| − | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
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| − | # Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) |
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| − | # Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning. |
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| − | |||
| − | === [//wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe: "CF4/O2 Clean"] === |
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| − | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it. |
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=[[PECVD 2 (Advanced Vacuum)]]= |
=[[PECVD 2 (Advanced Vacuum)]]= |
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| + | ===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data=== |
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| − | ==== Historical Particulate Data ==== |
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| − | |||
| − | *[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates (Gain4) in PECVD#2 2015] |
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| − | *[https://docs.google.com/spreadsheets/d/1xpk9tJrE68NIJ_1yIym0xBxd4fnzHHBHdkhFehruO3E/edit#gid=sharing Particulates (Gain4) in PECVD#2 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates (Gain4) in PECVD#2 2017] |
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| − | |||
| − | *[https://docs.google.com/spreadsheets/d/1yPAPP24z3RcRRi-HqEp3GJN4JM8Ec8SFJwZ-OYGG2HU/edit#gid=sharing Particulates in PECVD#2 films 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1aU6fTyQ5MlGD4uCa9gepG5rLJzW3wlkOWSKEl_w_Ye4/edit#gid=sharing Particulates in PECVD#2 films 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1OPZXe8g3H0wywIrPFel3nSZ5iyPs2mVIYUSVKfTtMDg/edit#gid=sharing Particulates in PECVD#2 films 2019] |
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| − | *[https://docs.google.com/spreadsheets/d/1Y9lomsf7bDojeXoAsEG7xvypx_sw_atpmPwB9xtK1Zk/edit#gid=sharing Particulates in PECVD#2 films 2020] |
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==SiO<sub>2</sub> deposition (PECVD #2)== |
==SiO<sub>2</sub> deposition (PECVD #2)== |
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| + | *[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''STD SiO2''" |
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| − | ==== Standard Recipe ==== |
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| + | *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] |
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| − | |||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021 |
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| − | *[https://docs.google.com/spreadsheets/d/1vgWUtpCWC_TFffU9kuR3wqvjryiNA5OV/edit#gid= STD SiO2 Recipe Parameters] |
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| − | *[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= STD SiO2 Recipe] |
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| − | |||
| − | ==== Historical Data ==== |
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| − | |||
| − | ===== Thin-Film Properties ===== |
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| − | |||
| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data 2014] |
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| − | *[https://docs.google.com/spreadsheets/d/1d5boeJRWWgMqvQe6nVM7m8s3KAcS4Yp2L5CEU9svkX4/edit#gid=sharing Oxide Data 2015] |
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| − | *[https://docs.google.com/spreadsheets/d/1XQRcTJdw9AIMPAUsH0n9Ic9Fe1_xGDSvAxD4gVc9FBw/edit#gid=sharing Oxide data 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/1vcaHwraMGNHuRxgWwGp78EJf4T3Jk182wxoCz_neuck/edit#gid=sharing Oxide Data 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1VI-sUmaqois0NsCvf2kQmPfRRa03MjBzl779hmmLtP4/edit#gid=sharing Oxide Data 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1oWnQ3D6oknKWU2bohvSrN85rlEZgQN3YP_ZJ4i8u7do/edit#gid=sharing Oxide Data 2019] |
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| − | *[https://docs.google.com/spreadsheets/d/1h5Zrw2hSiMCJrqEsoaRh1lnUVUgKZ67pk-AjmikfrVc/edit#gid=sharing Oxide Data 2020] |
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| − | |||
| − | ===== Uniformity Data ===== |
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| − | |||
| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness Uniformity 2014] |
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| − | *[https://docs.google.com/spreadsheets/d/16pZHcGwesXB1mMPwntOudBIlPvRh6A6DI37DEwyYfPw/edit#gid=sharing Oxide Thickness Uniformity 2015] |
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| − | *[https://docs.google.com/spreadsheets/d/10OEuANVNmHqWvx-92zibechIrHK5kgqSK4B_O_O3-YI/edit#gid=sharing Oxide Thickness Uniformity 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/19JjJYdFNFzO685Hp9hODVRFAYF5bP3IEYGTRGQjqLN4/edit#gid=sharing Oxide Thickness Uniformity 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2019] |
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| − | *[https://docs.google.com/spreadsheets/d/1Dx2sNMB9VQQil85SKfnZZ_zqUt1pESfgZeXt3Z3HXJc/edit#gid=sharing Oxide Thickness Uniformity 2020] |
||
==SiN deposition (PECVD #2)== |
==SiN deposition (PECVD #2)== |
||
| + | *[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''Nitride2''" |
||
| − | ==== Standard Recipe ==== |
||
| + | *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] |
||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021 |
||
| + | ==Low-Stress SiN deposition (PECVD #2)== |
||
| − | *[//wiki.nanotech.ucsb.edu/wiki/images/4/4c/SiNx_Films_by_PECVD2.pdf SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate] |
||
| + | ''Low-Stress Silicon Nitride, Si<sub>3</sub>N<sub>4</sub> (< ±100 MPa)'' |
||
| − | *[https://docs.google.com/spreadsheets/d/1Oegk0aFFCuz9wQHDN2Kdz0NFo9_wuEVW/edit?dls=true#gid= STD Nitride2 Recipe Parameters] |
||
| − | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''LSNitride2'' |
| + | *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] |
||
| − | ==== Historical Data ==== |
||
| + | *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Process Control Data] |
||
| + | *[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]] |
||
| + | *:''Old Versions of the recipe:'' |
||
| + | *:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]'' |
||
| + | *:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]'' |
||
| + | ==Amorphous-Si deposition (PECVD #2)== |
||
| − | ===== Thin-Film Properties ===== |
||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] |
||
| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014] |
||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress] |
||
| − | *[https://docs.google.com/spreadsheets/d/1SkYqOwgjUyMaFBPhuTjMvBTXu0KdQFNmITryF_OVi8o/edit#gid=sharing Nitride2 Data 2015] |
||
| − | *[https://docs.google.com/spreadsheets/d/1HJszgZyEZR9ZsiJpQM6pdsoQ6pWwI6brXasdmfDRoBQ/edit#gid=sharing Nitride2 Data 2016] |
||
| − | *[https://docs.google.com/spreadsheets/d/1f3JBEnr7lf0yIMlzlOYKv_bXlIDyXt8vec_rSVJIoOk/edit#gid=sharing Nitride2 Data 2017] |
||
| − | *[https://docs.google.com/spreadsheets/d/1OO0ewGSqYSzL3lj8fXkgckTkBGQRliD6sBc02IW7wZY/edit#gid=sharing Nitride2 Data 2018] |
||
| − | *[https://docs.google.com/spreadsheets/d/1Zi8CRspd3LTDdNRRCneE0--bVohWvZbV_kSHo04s0oI/edit#gid=sharing Nitride2 Data 2019] |
||
| − | *[https://docs.google.com/spreadsheets/d/1T0Zk2geshX9h-Cf8I1BAcQqWFhCqorJrrOnDH4hz7GY/edit#gid=sharing Nitride2 Data 2020] |
||
| + | ==Standard Cleaning Procedure (PECVD #2)== |
||
| − | ===== Uniformity Data ===== |
||
| + | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
||
| + | #(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. |
||
| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness Uniformity 2014] |
||
| + | #Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning. |
||
| − | *[https://docs.google.com/spreadsheets/d/14_dYQu3z31fF_oxsUUX8BmDucgv6B07xB3_zqP0HmvM/edit#gid=sharing Nitride2 Thickness Uniformity 2015] |
||
| − | *[https://docs.google.com/spreadsheets/d/1qBHs7uALM2OdE-yXOq4uZk6aUQEjZRjG1C6RcMEf0sk/edit#gid=sharing Nitride2 Thickness Uniformity 2016] |
||
| − | *[https://docs.google.com/spreadsheets/d/1WJcYzHUjLrWpys_i-Q96FN_lBDBufpXZKZVEX_gri_Q/edit#gid=sharing Nitride2 Thickness Uniformity 2017] |
||
| − | *[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2018] |
||
| − | *[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2019] |
||
| − | *[https://docs.google.com/spreadsheets/d/16nlLjk_kctE6YKQBJbq0SotP80tybdSdJ0hvxbeohE0/edit#gid=sharing Nitride2 Thickness Uniformity 2020] |
||
| + | ===[https://wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]=== |
||
| − | ==Low-Stress SiN deposition (PECVD #2)== |
||
| + | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it. |
||
| − | ''Low-Stress SilIcon Nitride (< 100 MPa)'' |
||
| − | ==== Standard Recipe ==== |
||
| + | '''Clean Times (PECVD#2''') |
||
| − | *[https://docs.google.com/spreadsheets/d/1qXCH1phgvk3-5_5FUqeQaGPERhyS5dn4/edit#gid= STD LS Nitride2 Recipe Parameters] |
||
| + | {| class="wikitable" |
||
| − | *[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= STD LS Nitride2 Recipe] |
||
| + | !Film Deposited |
||
| − | *''Old Versions:'' |
||
| + | !Cleaning Time (Dry) |
||
| − | **[//wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018] |
||
| + | |- |
||
| − | **[//wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018] |
||
| + | |SiO<sub>2</sub> |
||
| + | |1 min. clean for every 1 min. deposition |
||
| + | |- |
||
| + | |Si<sub>3</sub>N<sub>4</sub> |
||
| + | |1 min. clean for every 7 min of deposition |
||
| + | |- |
||
| + | |If > 29min total dep time |
||
| + | (Season + Dep) |
||
| + | |Wet Clean the Upper Lid/Chamber |
||
| + | DI water then Isopropyl Alcohol on chamber wall & portholes |
||
| + | |} |
||
| + | =[[ICP-PECVD (Unaxis VLR)]]= |
||
| − | ==== Historical Data ==== |
||
| + | 2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber. |
||
| + | The system currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films. |
||
| − | ===== Thin-Film Properties ===== |
||
| + | ===[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - Plots of all Process Control data=== |
||
| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data 2014] |
||
| − | *[https://docs.google.com/spreadsheets/d/16Q6BrPoNiFP0elVoSGwXRfQdHXzAXOgiyqKmEw-4kII/edit#gid=sharing LS Nitride2 Data 2015] |
||
| − | *[https://docs.google.com/spreadsheets/d/1GZ58eFzD-T8DJ2Nsaj74u6cvawzsOI2DmMit6Z7vqys/edit#gid=sharing LS Nitride2 Data 2016] |
||
| − | *[https://docs.google.com/spreadsheets/d/1gGIWqkCnykPgBc3prhXExT7QcNjWm2HdbTtwugNqm18/edit#gid=sharing LS Nitride2 Data 2017] |
||
| − | *[https://docs.google.com/spreadsheets/d/1vwpDtiglR2DLWiYNhpBX77cyyj9lw55iVeFz1puN7bM/edit#gid=sharing LS Nitride2 Data 2018] |
||
| − | *[https://docs.google.com/spreadsheets/d/1zvSl2P5T926Ol48yH3FBCZm1zCeycl3S8GWQYtzi8VI/edit#gid=sharing LS Nitride2 Data 2019] |
||
| − | *[https://docs.google.com/spreadsheets/d/1SxW4t3xkiSkEPobUkpPF9m_gcC6yiaOPRlIgCWyqebg/edit#gid=sharing LS Nitride2 Data 2020] |
||
| + | ==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== |
||
| − | ===== Uniformity Data ===== |
||
| + | *[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR 250C''" |
||
| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness Uniformity 2014] |
||
| − | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>] |
| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021 |
||
| − | *[https://docs.google.com/spreadsheets/d/1FRzW9BaIPF2D3cxPgjLq8hbvrBHXDNkiW6DiPVKQBRM/edit#gid=sharing LS Nitride2 Thickness Uniformity 2016] |
||
| − | *[https://docs.google.com/spreadsheets/d/1vyrgvdEZFgnQUilpa5Ka2nOfowY8zlmJfbQ77EamNBg/edit#gid=sharing LS Nitride2 Thickness Uniformity 2017] |
||
| − | *[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2018] |
||
| − | *[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2019] |
||
| − | *[https://docs.google.com/spreadsheets/d/1TMasE4I--H948aKCWEO1Y3Dw2pCA6-iqQ0km3v_2VFo/edit#gid=sharing LS Nitride2 Thickness Uniformity 2020] |
||
| + | ==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== |
||
| − | ==Amorphous-Si deposition (PECVD #2)== |
||
| + | *[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiO2 HDR 250C''" |
||
| − | *[//wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] |
||
| + | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Present Data</nowiki>] |
||
| − | *[//wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Films and Their Stress] |
||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] |
||
| + | ==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
||
| − | == Cleaning Recipes (PECVD #2) == |
||
| − | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
||
| − | #Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) |
||
| − | #Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning. |
||
| − | ===[//wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe: "STD CF4/O2 Clean recipe"] === |
||
| − | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it. |
||
| + | *[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiN 250C''" |
||
| − | =[[ICP-PECVD (Unaxis VLR)]]= |
||
| + | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Current Process Control Data</nowiki>] |
||
| − | 2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|'''new procedures''']] to ensure low particle counts in the chamber. |
||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] - before Oct. 2021 |
||
| + | ==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
||
| − | The system currently has '''Deuterated Silane (SiD<sub>4</sub>) installed''' - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. |
||
| + | *[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Standard Recipe</nowiki>] - "''SiN Low Stress 250C''" |
||
| − | ==== Historical Particulate Data ==== |
||
| − | * |
+ | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Current Process Control Data</nowiki>] |
| − | * [https://docs.google.com/spreadsheets/d/1fMebt-6BfAurcjMv1aDsmm6VgPqokU73_2ReZFqzEEk/edit#gid=sharing Particulates in Unaxis films @250C-2020] |
||
| − | == |
+ | ==Standard Cleaning Procedure [ICP-PECVD]== |
| + | You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
||
| − | *[https://docs.google.com/spreadsheets/d/1T_4gaJQ3wHSNptoAtFR1fN0ePwfw3PsQ0DLSjqGeyM4/edit#gid=sharing SiO2 LDR 250C Recipe-2020] |
||
| − | *[https://docs.google.com/spreadsheets/d/1nsdGPpfyZfIesyYG1PIU9uYyuzQWrfpsvVWM6J_H6BI/edit#gid=sharing SiO2 HDR 250C Recipe-2020] |
||
| − | *[https://docs.google.com/spreadsheets/d/1UTr93aWx0MjCwVBwRmYjPwo9ASluGQ-OrJhVG_R57aY/edit#gid=sharing SiN 250C Recipe-2020] |
||
| − | *[https://docs.google.com/spreadsheets/d/1MXW7UNpTyk93ucOVQaSun5IX7QaUbSABNHNznb09qw8/edit#gid=sharing SiN LS 250C Recipe-2020] |
||
| + | *SiNx etches at 20nm/min |
||
| − | ==SiO2 LDR 250C Deposition (Unaxis VLR)== |
||
| − | + | *SiO<sub>2</sub> etches at 40nm/min |
|
| − | === |
+ | ===Standard Clean Recipe=== |
| − | ===== Thin-Film Properties ===== |
||
| − | This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]]. |
||
| − | *[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=sharing SiO2 LDR 250C 300nm Data-2019] |
||
| − | *[https://docs.google.com/spreadsheets/d/1bU2Gu3x3DNyrq8skMAQZJCsra-IcoDCT0U5D135YPgc/edit#gid=sharing SiO2 LDR 250C 300nm Data-2020] |
||
| − | ===== Uniformity Data ===== |
||
| − | *[https://docs.google.com/spreadsheets/d/1Xi21OrargcNRthZ2fM_56APB8O599ctDfq5E_6B5Ft0/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2019] |
||
| − | *[https://docs.google.com/spreadsheets/d/1-ytu5R75FAXNfhJZTRuK2eRZyu_L6Hy1BWV2zN6_tRA/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2020] |
||
| − | |||
| − | ==SiO2 HDR 250C Deposition (Unaxis VLR)== |
||
| − | ''High-Deposition Rate SiO<sub>2</sub>'' |
||
| − | |||
| − | ==== Historical Data ==== |
||
| − | ===== Thin-Film Properties ===== |
||
| − | This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]]. |
||
| − | *[https://docs.google.com/spreadsheets/d/16s-tUna9xrkKneK1lE-qSPuUHWlDmP6Qu3IngBXP3R8/edit#gid=sharing SiO2 HDR 250C 300nm Data-2019] |
||
| − | *[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=sharing SiO2 HDR 250C 300nm Data-2020] |
||
| − | ===== Uniformity Data ===== |
||
| − | *[https://docs.google.com/spreadsheets/d/1Mm_rsTm9xDQ50kZx6X6EZ5dTegUvinq0zFxRtE8B2R4/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2019] |
||
| − | *[https://docs.google.com/spreadsheets/d/1nzVeCKsmgL17zft6axQlixpvsEowJOG7qCnLQm_0XxE/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2020] |
||
| − | |||
| − | == SiN 250C deposition (Unaxis VLR) == |
||
| − | ==== Historical Data ==== |
||
| − | ===== Thin-Film Properties ===== |
||
| − | This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure [[here]]. |
||
| − | *[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=sharing SiN 250C 300nm Data-2020] |
||
| − | ===== Uniformity Data ===== |
||
| − | *[https://docs.google.com/spreadsheets/d/1YAx_Ix84xId8CAhDwZeFT7jLFUwg-BET9aBwg3DxUmQ/edit#gid=sharing Thickness Uniformity SiN 250C 300nm-2020] |
||
| − | |||
| − | == SiN LS 250C Deposition (Unaxis VLR) == |
||
| − | ''Low Stress Silicon-Nitride'' |
||
| − | |||
| − | ==== Historical Data ==== |
||
''To Be Added'' |
''To Be Added'' |
||
| − | |||
| − | ===== Thin-Film Properties ===== |
||
| − | This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure [[here]]. |
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| − | *[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=sharing SiN LS 250C 300nm Data-2020] |
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| − | ===== Uniformity Data ===== |
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| − | *[https://docs.google.com/spreadsheets/d/1NDyxH1i9COM2XTryLqYPE9yOekgRslAJUO7o56iTOEQ/edit#gid=sharing Thickness Uniformity SiN LS 250C 300nm-2020] |
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| − | |||
| − | == Cleaning Recipes (Unaxis VLR Dep) == |
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| − | You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
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| − | * SiNx etches at 20nm/min |
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| − | * SiO2 etches at 40nm/min |
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Revision as of 18:14, 15 November 2022
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
PECVD 1 Process Control Plots - Plots of all process control data
SiO2 deposition (PECVD #1)
- SiO2 [PECVD 1] Current Process Control Data
- SiO2 [PECVD 1] Historical Data - Oct. 2021 and earlier
SiN deposition (PECVD #1)
- Si3N4 [PECVD 1] Standard Recipe
- Si3N4 [PECVD 1] Current Process Control Data
- Si3N4 [PECVD 1] Historical Data - Oct. 2021 and earlier
Low Stress Si3N4 (PECVD#1)
- Low Stress Si3N4 [PECVD 1] Standard Recipe
- Low Stress Si3N4 [PECVD 1] Current Process Control Data - To Be Added
- Low Stress Si3N4 [PECVD 1] Historical Data - 2021-10 and earlier
SiOxNy deposition (PECVD #1)
- SiOxNy Standard Recipe
- SiOxNy Data 2014 - Rate, Index etc.
- SiOxNy1000A Thickness uniformity 2014
Standard Cleaning Procedure (PECVD #1)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
- Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
| Film Dep'd | Cleaning Time |
|---|---|
| SiO2 | TBD |
| Si3N4 | TBD |
| SiOxNy | Same as XYZ |
Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
PECVD 2 (Advanced Vacuum)
PECVD 2 Process Control Plots - Plots of all process control data
SiO2 deposition (PECVD #2)
- SiO2 [PECVD 2] Standard Recipe - "STD SiO2"
- SiO2 [PECVD 2] Current Process Control Data
- SiO2 [PECVD 2] Historical Data - Before Oct. 2021
SiN deposition (PECVD #2)
- Si3N4 [PECVD 2] Standard Recipe - "Nitride2"
- Si3N4 [PECVD 2] Current Process Control Data
- Si3N4 [PECVD 2] Historical Data - Before Oct. 2021
Low-Stress SiN deposition (PECVD #2)
Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)
- Low Stress Si3N4 [PECVD 2] Standard Recipe - "LSNitride2
- Low Stress Si3N4 [PECVD 2] Current Process Control Data
- Plots of Low-Stress Si3N4 Process Control Data
- Low Stress Si3N4 [PECVD 2] Historical Data - Before Oct. 2021
- Old Versions of the recipe:
- LS Nitride2 Standard Recipe 2014-5/9/2018
- STD LSNitride2 5/9/2018
Amorphous-Si deposition (PECVD #2)
Standard Cleaning Procedure (PECVD #2)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
- Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
Clean Times (PECVD#2)
| Film Deposited | Cleaning Time (Dry) |
|---|---|
| SiO2 | 1 min. clean for every 1 min. deposition |
| Si3N4 | 1 min. clean for every 7 min of deposition |
| If > 29min total dep time
(Season + Dep) |
Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes |
ICP-PECVD (Unaxis VLR)
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.
ICP-PECVD Process Control Plots - Plots of all Process Control data
Low Deposition Rate SiO2 [ICP-PECVD]
- Low Deposition Rate SiO2 [ICP-PECVD] - Standard Recipe - "SiO2 LDR 250C"
- Low Deposition Rate SiO2 [ICP-PECVD] - Current Process Control Data
- Low Deposition Rate SiO2 [ICP-PECVD] - Historical Data - before Oct. 2021
High Deposition Rate SiO2 [ICP-PECVD]
- High Deposition Rate SiO2 [ICP-PECVD] Standard Recipe - "SiO2 HDR 250C"
- High Deposition Rate SiO2 [ICP-PECVD] Present Data
- High Deposition Rate SiO2 [ICP-PECVD] Historical Data
Si3N4 [ICP-PECVD]
- Si3N4 [ICP-PECVD] Standard Recipe - "SiN 250C"
- Si3N4 [ICP-PECVD] Current Process Control Data
- Si3N4 [ICP-PECVD] Historical Data - before Oct. 2021
Low Stress Si3N4 [ICP-PECVD]
- Low Stress Si3N4 [ICP-PECVD] Standard Recipe - "SiN Low Stress 250C"
- Low Stress Si3N4 [ICP-PECVD] Current Process Control Data
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min
Standard Clean Recipe
To Be Added