Difference between revisions of "PECVD Recipes"
Jump to navigation
Jump to search
| (43 intermediate revisions by 2 users not shown) | |||
| Line 13: | Line 13: | ||
==SiN deposition (PECVD #1)== |
==SiN deposition (PECVD #1)== |
||
| ⚫ | |||
| − | *[//wiki.nanotech.ucsb.edu/wiki/images/3/32/New_PECVD1-SiO2-standard_recipe_2014_SiO2_standard_recipe.pdf SiN Standard Recipe] |
||
| − | *[https://docs.google.com/spreadsheets/d/10ccfgCf5O0JM6L9J5XDz-gWVQz9P24VU/edit#gid= |
+ | *[https://docs.google.com/spreadsheets/d/10ccfgCf5O0JM6L9J5XDz-gWVQz9P24VU/edit#gid= Si3N4 Recipe parameters] |
==== Historical Data ==== |
==== Historical Data ==== |
||
| Line 41: | Line 41: | ||
==SiO<sub>2</sub> deposition (PECVD #1)== |
==SiO<sub>2</sub> deposition (PECVD #1)== |
||
| ⚫ | |||
| − | *[//wiki.nanotech.ucsb.edu/wiki/images/8/87/New_PECVD1-SiN-standard_recipe_2014_SiN_standard_recipe.pdf SiO<sub>2</sub> Standard Recipe] |
||
| − | *[https://docs.google.com/spreadsheets/d/10ccfgCf5O0JM6L9J5XDz-gWVQz9P24VU/edit#gid= |
+ | *[https://docs.google.com/spreadsheets/d/10ccfgCf5O0JM6L9J5XDz-gWVQz9P24VU/edit#gid= SiO2 Recipe parameters] |
==== Historical Data ==== |
==== Historical Data ==== |
||
| Line 83: | Line 83: | ||
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
||
# Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) |
# Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) |
||
| − | # Load the recipe for cleaning " |
+ | # Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning. |
| + | === [//wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe: "CF4/O2 Clean"] === |
||
| − | === " CF4/O2 Clean recipe" === |
||
| + | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it. |
||
| − | [[File:PECVD1-cleaning.png|none|thumb|701x701px|PECVD1- cleaning recipe]] |
||
=[[PECVD 2 (Advanced Vacuum)]]= |
=[[PECVD 2 (Advanced Vacuum)]]= |
||
| Line 106: | Line 106: | ||
*[https://docs.google.com/spreadsheets/d/1vgWUtpCWC_TFffU9kuR3wqvjryiNA5OV/edit#gid= STD SiO2 Recipe Parameters] |
*[https://docs.google.com/spreadsheets/d/1vgWUtpCWC_TFffU9kuR3wqvjryiNA5OV/edit#gid= STD SiO2 Recipe Parameters] |
||
| − | *[https:// |
+ | *[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= STD SiO2 Recipe] |
==== Historical Data ==== |
==== Historical Data ==== |
||
| Line 136: | Line 136: | ||
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4c/SiNx_Films_by_PECVD2.pdf SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate] |
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4c/SiNx_Films_by_PECVD2.pdf SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate] |
||
*[https://docs.google.com/spreadsheets/d/1Oegk0aFFCuz9wQHDN2Kdz0NFo9_wuEVW/edit?dls=true#gid= STD Nitride2 Recipe Parameters] |
*[https://docs.google.com/spreadsheets/d/1Oegk0aFFCuz9wQHDN2Kdz0NFo9_wuEVW/edit?dls=true#gid= STD Nitride2 Recipe Parameters] |
||
| + | |||
| ⚫ | |||
==== Historical Data ==== |
==== Historical Data ==== |
||
| Line 165: | Line 167: | ||
*[https://docs.google.com/spreadsheets/d/1qXCH1phgvk3-5_5FUqeQaGPERhyS5dn4/edit#gid= STD LS Nitride2 Recipe Parameters] |
*[https://docs.google.com/spreadsheets/d/1qXCH1phgvk3-5_5FUqeQaGPERhyS5dn4/edit#gid= STD LS Nitride2 Recipe Parameters] |
||
| ⚫ | |||
*''Old Versions:'' |
*''Old Versions:'' |
||
**[//wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018] |
**[//wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018] |
||
| Line 199: | Line 202: | ||
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
||
#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) |
#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) |
||
| − | #Load the recipe for cleaning " |
+ | #Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning. |
| − | === |
+ | ===[//wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe: "STD CF4/O2 Clean recipe"] === |
| + | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it. |
||
| − | [[File:PECVD2 photo for cleaning.png|none|thumb|725x725px|Advanced PECVD2 Cleaning recipe]] |
||
=[[ICP-PECVD (Unaxis VLR)]]= |
=[[ICP-PECVD (Unaxis VLR)]]= |
||
| + | |||
==== Historical Particulate Data ==== |
==== Historical Particulate Data ==== |
||
| Line 209: | Line 213: | ||
* [https://docs.google.com/spreadsheets/d/1fMebt-6BfAurcjMv1aDsmm6VgPqokU73_2ReZFqzEEk/edit#gid=sharing Particulates in Unaxis films @250C-2020] |
* [https://docs.google.com/spreadsheets/d/1fMebt-6BfAurcjMv1aDsmm6VgPqokU73_2ReZFqzEEk/edit#gid=sharing Particulates in Unaxis films @250C-2020] |
||
| − | == |
+ | ==== Standard Recipes ==== |
| ⚫ | |||
| − | |||
| ⚫ | |||
| ⚫ | |||
| − | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/1UTr93aWx0MjCwVBwRmYjPwo9ASluGQ-OrJhVG_R57aY/edit#gid=sharing SiN 250C Recipe-2020] |
| − | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/1MXW7UNpTyk93ucOVQaSun5IX7QaUbSABNHNznb09qw8/edit#gid=sharing SiN LS 250C Recipe-2020] |
| ⚫ | |||
| − | |||
| ⚫ | |||
| ⚫ | |||
| ⚫ | |||
| ⚫ | |||
| − | ==SiO2 |
+ | ==SiO2 LDR 250C Deposition (Unaxis VLR)== |
| ⚫ | |||
| − | |||
| − | === |
+ | ===== Thin-Film Properties ===== |
| + | This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]]. |
||
*[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=sharing SiO2 LDR 250C 300nm Data-2019] |
*[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=sharing SiO2 LDR 250C 300nm Data-2019] |
||
| − | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/1bU2Gu3x3DNyrq8skMAQZJCsra-IcoDCT0U5D135YPgc/edit#gid=sharing SiO2 LDR 250C 300nm Data-2020] |
| + | ===== Uniformity Data ===== |
||
*[https://docs.google.com/spreadsheets/d/1Xi21OrargcNRthZ2fM_56APB8O599ctDfq5E_6B5Ft0/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2019] |
*[https://docs.google.com/spreadsheets/d/1Xi21OrargcNRthZ2fM_56APB8O599ctDfq5E_6B5Ft0/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2019] |
||
| − | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/1-ytu5R75FAXNfhJZTRuK2eRZyu_L6Hy1BWV2zN6_tRA/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2020] |
| ⚫ | |||
| ⚫ | |||
| − | + | ==SiO2 HDR 250C Deposition (Unaxis VLR)== |
|
| + | ==== Historical Data ==== |
||
| ⚫ | |||
| + | ===== Thin-Film Properties ===== |
||
| + | This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]]. |
||
| + | *[https://docs.google.com/spreadsheets/d/16s-tUna9xrkKneK1lE-qSPuUHWlDmP6Qu3IngBXP3R8/edit#gid=sharing SiO2 HDR 250C 300nm Data-2019] |
||
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=sharing SiO2 HDR 250C 300nm Data-2020] |
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=sharing SiO2 HDR 250C 300nm Data-2020] |
||
| + | ===== Uniformity Data ===== |
||
| − | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/1Mm_rsTm9xDQ50kZx6X6EZ5dTegUvinq0zFxRtE8B2R4/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2019] |
*[https://docs.google.com/spreadsheets/d/1nzVeCKsmgL17zft6axQlixpvsEowJOG7qCnLQm_0XxE/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2020] |
*[https://docs.google.com/spreadsheets/d/1nzVeCKsmgL17zft6axQlixpvsEowJOG7qCnLQm_0XxE/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2020] |
||
| + | |||
| ⚫ | |||
| + | == SiN 250C deposition (Unaxis VLR) == |
||
| ⚫ | |||
| + | ==== Historical Data ==== |
||
| + | ===== Thin-Film Properties ===== |
||
| + | This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure [[here]]. |
||
| ⚫ | |||
| + | ===== Uniformity Data ===== |
||
| + | *[https://docs.google.com/spreadsheets/d/1YAx_Ix84xId8CAhDwZeFT7jLFUwg-BET9aBwg3DxUmQ/edit#gid=sharing Thickness Uniformity SiN 250C 300nm-2020] |
||
| + | |||
| ⚫ | |||
| + | ==== Historical Data ==== |
||
| + | ===== Thin-Film Properties ===== |
||
| + | This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure [[here]]. |
||
| ⚫ | |||
| + | ===== Uniformity Data ===== |
||
| ⚫ | |||
== Cleaning Recipes (Unaxis VLR Dep) == |
== Cleaning Recipes (Unaxis VLR Dep) == |
||
| Line 243: | Line 259: | ||
* SiNx etches at 20nm/min |
* SiNx etches at 20nm/min |
||
* SiO2 etches at 40nm/min |
* SiO2 etches at 40nm/min |
||
| − | ===" Post-Dep Clean" recipe=== |
||
| − | Add the picture of " Post-Dep Clean" recipe |
||
Revision as of 08:50, 8 May 2020
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
Historical Particulate Data
- Particulates(Gain4) in PECVD#1-OLD DATA 2015
- Particulates(Gain4) in PECVD#1-OLD DATA 2016
- Particulates(Gain4) in PECVD#1-OLD DATA 2017
- Particulates in PECVD#1 films 2017
- Particulates in PECVD#1 films 2018
- Particulates in PECVD#1 films 2019
- Particulates in PECVD#1 films 2020
SiN deposition (PECVD #1)
Historical Data
Thin-Film Properties
- SiN 100nm Data 2014
- SiN 100nm Data 2015
- SiN 100nm Data 2016
- SiN 100nm Data 2017
- SiN 300nm Data 2017
- SiN 300nm Data 2018
- SiN 300nm Data 2019
- SiN 300nm Data 2020
Uniformity Data
- SiN 100 nm Thickness uniformity 2014
- SiN 100 nm Thickness uniformity 2015
- SiN 100 nm Thickness uniformity 2016
- SiN 100 nm Thickness uniformity 2017
- SiN 300nm Thickness uniformity 2017
- SiN 300nm Thickness uniformity 2018
- SiN 300nm Thickness uniformity 2019
- SiN 300nm Thickness uniformity 2020
SiO2 deposition (PECVD #1)
Historical Data
Thin-Film Properties
- SiO2 100nm Data 2014
- SiO2 100nm Data 2015
- SiO2 100nm Data 2016
- SiO2 100nm Data 2017
- SiO2 300nm Data 2017
- SiO2 300nm Data 2018
- SiO2 300nm Data 2019
- SiO2 300nm Data 2020
Uniformity Data
- SiO2 100nm Thickness uniformity 2014
- SiO2 100 nm Thickness uniformity 2015
- SiO2 100 nmThickness uniformity 2016
- SiO2 100nm Thickness uniformity 2017
- SiO2 300nm Thickness uniformity 2017
- SiO2 300nm Thickness uniformity 2018
- SiO2 300nm Thickness uniformity 2019
- SiO2 300nm Thickness uniformity 2020
Low-Stress SiN - LS-SiN (PECVD#1)
SiOxNy deposition (PECVD #1)
Cleaning Recipes (PECVD #1)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
- Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Standard Cleaning Recipe: "CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
PECVD 2 (Advanced Vacuum)
Historical Particulate Data
- Particulates (Gain4) in PECVD#2 2015
- Particulates (Gain4) in PECVD#2 2016
- Particulates (Gain4) in PECVD#2 2017
- Particulates in PECVD#2 films 2017
- Particulates in PECVD#2 films 2018
- Particulates in PECVD#2 films 2019
- Particulates in PECVD#2 films 2020
SiO2 deposition (PECVD #2)
Standard Recipe
Historical Data
Thin-Film Properties
- Oxide Data 2014
- Oxide Data 2015
- Oxide data 2016
- Oxide Data 2017
- Oxide Data 2018
- Oxide Data 2019
- Oxide Data 2020
Uniformity Data
- Oxide Thickness Uniformity 2014
- Oxide Thickness Uniformity 2015
- Oxide Thickness Uniformity 2016
- Oxide Thickness Uniformity 2017
- Oxide Thickness Uniformity 2018
- Oxide Thickness Uniformity 2019
- Oxide Thickness Uniformity 2020
SiN deposition (PECVD #2)
Standard Recipe
Historical Data
Thin-Film Properties
- Nitride2 Data 2014
- Nitride2 Data 2015
- Nitride2 Data 2016
- Nitride2 Data 2017
- Nitride2 Data 2018
- Nitride2 Data 2019
- Nitride2 Data 2020
Uniformity Data
- Nitride2 Thickness Uniformity 2014
- Nitride2 Thickness Uniformity 2015
- Nitride2 Thickness Uniformity 2016
- Nitride2 Thickness Uniformity 2017
- Nitride2 Thickness Uniformity 2018
- Nitride2 Thickness Uniformity 2019
- Nitride2 Thickness Uniformity 2020
Low-Stress SiN deposition (PECVD #2)
Low-Stress SilIcon Nitride (< 100 MPa)
Standard Recipe
- STD LS Nitride2 Recipe Parameters
- STD LS Nitride2 Recipe
- Old Versions:
Historical Data
Thin-Film Properties
- LS Nitride2 Data 2014
- LS Nitride2 Data 2015
- LS Nitride2 Data 2016
- LS Nitride2 Data 2017
- LS Nitride2 Data 2018
- LS Nitride2 Data 2019
- LS Nitride2 Data 2020
Uniformity Data
- LS Nitride2 Thickness Uniformity 2014
- LS Nitride2 Thickness Uniformity 2015
- LS Nitride2 Thickness Uniformity 2016
- LS Nitride2 Thickness Uniformity 2017
- LS Nitride2 Thickness Uniformity 2018
- LS Nitride2 Thickness Uniformity 2019
- LS Nitride2 Thickness Uniformity 2020
Amorphous-Si deposition (PECVD #2)
Cleaning Recipes (PECVD #2)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
- Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Standard Clean Recipe: "STD CF4/O2 Clean recipe"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
ICP-PECVD (Unaxis VLR)
Historical Particulate Data
Standard Recipes
SiO2 LDR 250C Deposition (Unaxis VLR)
Historical Data
Thin-Film Properties
This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure here.
Uniformity Data
SiO2 HDR 250C Deposition (Unaxis VLR)
Historical Data
Thin-Film Properties
This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure here.
Uniformity Data
SiN 250C deposition (Unaxis VLR)
Historical Data
Thin-Film Properties
This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure here.
Uniformity Data
SiN LS 250C Deposition (Unaxis VLR)
Historical Data
Thin-Film Properties
This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure here.
Uniformity Data
Cleaning Recipes (Unaxis VLR Dep)
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min